DE602004018924D1 - Low-power controller für standby-betrieb eines speichersystems - Google Patents

Low-power controller für standby-betrieb eines speichersystems

Info

Publication number
DE602004018924D1
DE602004018924D1 DE602004018924T DE602004018924T DE602004018924D1 DE 602004018924 D1 DE602004018924 D1 DE 602004018924D1 DE 602004018924 T DE602004018924 T DE 602004018924T DE 602004018924 T DE602004018924 T DE 602004018924T DE 602004018924 D1 DE602004018924 D1 DE 602004018924D1
Authority
DE
Germany
Prior art keywords
power down
wordline drivers
low
storage system
power controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004018924T
Other languages
English (en)
Inventor
David Hanson
Gregory Fredeman
John Golz
Hoki Kim
Paul Parries
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE602004018924D1 publication Critical patent/DE602004018924D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
DE602004018924T 2003-06-16 2004-05-19 Low-power controller für standby-betrieb eines speichersystems Active DE602004018924D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/250,233 US7046572B2 (en) 2003-06-16 2003-06-16 Low power manager for standby operation of memory system
PCT/EP2004/050867 WO2004112041A2 (en) 2003-06-16 2004-05-19 Low power manager for standby operation

Publications (1)

Publication Number Publication Date
DE602004018924D1 true DE602004018924D1 (de) 2009-02-26

Family

ID=33510198

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018924T Active DE602004018924D1 (de) 2003-06-16 2004-05-19 Low-power controller für standby-betrieb eines speichersystems

Country Status (6)

Country Link
US (2) US7046572B2 (de)
EP (1) EP1639602B1 (de)
CN (1) CN100570742C (de)
AT (1) ATE420439T1 (de)
DE (1) DE602004018924D1 (de)
WO (1) WO2004112041A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301849B2 (en) * 2003-07-11 2007-11-27 Texas Instruments Incorporated System for reducing row periphery power consumption in memory devices
US6940307B1 (en) * 2003-10-22 2005-09-06 Altera Corporation Integrated circuits with reduced standby power consumption
US7092309B2 (en) * 2004-04-30 2006-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Standby mode SRAM design for power reduction
US7144775B2 (en) * 2004-05-18 2006-12-05 Atmel Corporation Low-voltage single-layer polysilicon eeprom memory cell
JP4488800B2 (ja) * 2004-06-14 2010-06-23 株式会社ルネサステクノロジ 半導体集積回路装置
JP4562515B2 (ja) * 2004-12-22 2010-10-13 ルネサスエレクトロニクス株式会社 論理回路及びワードドライバ回路
US20060268651A1 (en) * 2005-05-26 2006-11-30 Cutter Douglas J Memory apparatus and method
US7600136B2 (en) * 2005-08-19 2009-10-06 Seagate Technology Llc Power management in an information channel
US7358764B1 (en) * 2006-06-09 2008-04-15 Altera Corporation Preset and reset circuitry for programmable logic device memory elements
US7512029B2 (en) * 2006-06-09 2009-03-31 Micron Technology, Inc. Method and apparatus for managing behavior of memory devices
US7583104B2 (en) 2006-12-12 2009-09-01 Microchip Technology Incorporated Maintaining input and/or output configuration and data state during and when coming out of a low power mode
JP5068088B2 (ja) * 2007-02-26 2012-11-07 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7782705B2 (en) * 2008-12-17 2010-08-24 Elite Semiconductor Memory Technology Inc. Word line decoder circuit
US8711718B2 (en) * 2010-07-04 2014-04-29 Mediatek Inc. Method and apparatus for reducing power consumption used in communication system having time slots
US8837226B2 (en) * 2011-11-01 2014-09-16 Apple Inc. Memory including a reduced leakage wordline driver
CN104050999B (zh) * 2013-03-11 2016-12-28 北京兆易创新科技股份有限公司 一种为浮栅存储器提供正负高压的字线驱动方法
CN104051004B (zh) * 2013-03-11 2017-02-22 北京兆易创新科技股份有限公司 一种为浮栅存储器提供正负高压的字线驱动方法
US9281022B2 (en) * 2013-07-10 2016-03-08 Zeno Semiconductor, Inc. Systems and methods for reducing standby power in floating body memory devices
CN104700886B (zh) * 2013-12-06 2019-05-31 恩智浦美国有限公司 具有电源状态传感器的存储器电路
CN108735258B (zh) * 2017-04-24 2020-10-09 中芯国际集成电路制造(上海)有限公司 地址译码器电路
US10311927B2 (en) 2017-04-24 2019-06-04 Micron Technology, Inc. Apparatuses and methods for providing word line voltages
US11830553B2 (en) 2020-10-23 2023-11-28 Changxin Memory Technologies, Inc. Word line drive circuit and dynamic random access memory
CN114496019A (zh) * 2020-10-23 2022-05-13 长鑫存储技术有限公司 字线驱动电路与动态随机存取存储器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4120047A (en) * 1977-04-20 1978-10-10 National Semiconductor Corporation Quasi-static MOS memory array with standby operation
US5257238A (en) * 1991-07-11 1993-10-26 Micron Technology, Inc. Dynamic memory having access transistor turn-off state
US5313430A (en) * 1992-12-09 1994-05-17 International Business Machines Corporation Power down circuit for testing memory arrays
US5877616A (en) * 1996-09-11 1999-03-02 Macronix International Co., Ltd. Low voltage supply circuit for integrated circuit
JPH10241361A (ja) * 1997-02-25 1998-09-11 Toshiba Corp 半導体記憶装置
JP3220035B2 (ja) * 1997-02-27 2001-10-22 エヌイーシーマイクロシステム株式会社 スタチック型半導体記憶装置
US6141240A (en) * 1998-09-17 2000-10-31 Texas Instruments Incorporated Apparatus and method for static random access memory array
US6115308A (en) * 1999-06-17 2000-09-05 International Business Machines Corporation Sense amplifier and method of using the same with pipelined read, restore and write operations
US6236617B1 (en) * 1999-12-10 2001-05-22 International Business Machines Corporation High performance CMOS word-line driver
US6333874B2 (en) * 2000-03-30 2001-12-25 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device having normal and standby modes, semiconductor integrated circuit and mobile electronic unit
US6343044B1 (en) * 2000-10-04 2002-01-29 International Business Machines Corporation Super low-power generator system for embedded applications
US6426914B1 (en) * 2001-04-20 2002-07-30 International Business Machines Corporation Floating wordline using a dynamic row decoder and bitline VDD precharge
US6545923B2 (en) * 2001-05-04 2003-04-08 Samsung Electronics Co., Ltd. Negatively biased word line scheme for a semiconductor memory device
KR100454259B1 (ko) * 2001-11-02 2004-10-26 주식회사 하이닉스반도체 모니터링회로를 가지는 반도체메모리장치

Also Published As

Publication number Publication date
US7046572B2 (en) 2006-05-16
WO2004112041A3 (en) 2005-05-12
EP1639602A2 (de) 2006-03-29
US7023758B2 (en) 2006-04-04
US20060039226A1 (en) 2006-02-23
CN100570742C (zh) 2009-12-16
US20040252573A1 (en) 2004-12-16
WO2004112041A2 (en) 2004-12-23
ATE420439T1 (de) 2009-01-15
CN1799103A (zh) 2006-07-05
EP1639602B1 (de) 2009-01-07

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition