DE602004021735D1 - Flash-Speicherdatenkorrektur und -säuberungsverfahren - Google Patents

Flash-Speicherdatenkorrektur und -säuberungsverfahren

Info

Publication number
DE602004021735D1
DE602004021735D1 DE602004021735T DE602004021735T DE602004021735D1 DE 602004021735 D1 DE602004021735 D1 DE 602004021735D1 DE 602004021735 T DE602004021735 T DE 602004021735T DE 602004021735 T DE602004021735 T DE 602004021735T DE 602004021735 D1 DE602004021735 D1 DE 602004021735D1
Authority
DE
Germany
Prior art keywords
data
flash memory
memory
erase
memory data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004021735T
Other languages
English (en)
Inventor
Carlos J Gonzalez
Kevin M Conley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34393904&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE602004021735(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602004021735D1 publication Critical patent/DE602004021735D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106Correcting systematically all correctable errors, i.e. scrubbing
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/16Protection against loss of memory contents
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
DE602004021735T 2003-10-03 2004-09-28 Flash-Speicherdatenkorrektur und -säuberungsverfahren Active DE602004021735D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/678,345 US7012835B2 (en) 2003-10-03 2003-10-03 Flash memory data correction and scrub techniques

Publications (1)

Publication Number Publication Date
DE602004021735D1 true DE602004021735D1 (de) 2009-08-06

Family

ID=34393904

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602004021735T Active DE602004021735D1 (de) 2003-10-03 2004-09-28 Flash-Speicherdatenkorrektur und -säuberungsverfahren
DE602004011097T Active DE602004011097T2 (de) 2003-10-03 2004-09-28 Flash-speicherdatenkorrektur- und scrub-techniken

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE602004011097T Active DE602004011097T2 (de) 2003-10-03 2004-09-28 Flash-speicherdatenkorrektur- und scrub-techniken

Country Status (9)

Country Link
US (5) US7012835B2 (de)
EP (2) EP1687720B1 (de)
JP (1) JP4723504B2 (de)
KR (1) KR101127882B1 (de)
CN (2) CN101630279B (de)
AT (2) ATE382892T1 (de)
DE (2) DE602004021735D1 (de)
TW (1) TWI261840B (de)
WO (1) WO2005036401A2 (de)

Families Citing this family (579)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
US6851070B1 (en) * 2001-08-13 2005-02-01 Network Appliance, Inc. System and method for managing time-limited long-running operations in a data storage system
JP4856848B2 (ja) * 2001-10-11 2012-01-18 アルテラ コーポレイション プログラマブルロジックリソース上のエラー検出
US7233522B2 (en) 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
US7505321B2 (en) 2002-12-31 2009-03-17 Sandisk 3D Llc Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
US7372731B2 (en) * 2003-06-17 2008-05-13 Sandisk Il Ltd. Flash memories with adaptive reference voltages
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7221588B2 (en) * 2003-12-05 2007-05-22 Sandisk 3D Llc Memory array incorporating memory cells arranged in NAND strings
US20050144516A1 (en) * 2003-12-30 2005-06-30 Gonzalez Carlos J. Adaptive deterministic grouping of blocks into multi-block units
US7594135B2 (en) 2003-12-31 2009-09-22 Sandisk Corporation Flash memory system startup operation
US7328377B1 (en) 2004-01-27 2008-02-05 Altera Corporation Error correction for programmable logic integrated circuits
US20050172064A1 (en) * 2004-01-29 2005-08-04 Marcelo Krygier Method and apparatus for addressing in mass storage non-volatile memory devices
US20080082736A1 (en) * 2004-03-11 2008-04-03 Chow David Q Managing bad blocks in various flash memory cells for electronic data flash card
JP4791356B2 (ja) * 2004-05-06 2011-10-12 パナソニック株式会社 半導体メモリ装置
US20050268077A1 (en) * 2004-05-11 2005-12-01 Peter Kuan Memory system for an electronic device and the method for controlling the same
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7975306B2 (en) * 2004-06-04 2011-07-05 Hewlett-Packard Development Company, L.P. Apparatus and method for monitoring secure software
TWI243376B (en) * 2004-07-16 2005-11-11 Univ Nat Chiao Tung Method of combining multi-level memory unit and providing the same with error correction mechanism
US7509526B2 (en) * 2004-09-24 2009-03-24 Seiko Epson Corporation Method of correcting NAND memory blocks and to a printing device employing the method
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7502256B2 (en) * 2004-11-30 2009-03-10 Siliconsystems, Inc. Systems and methods for reducing unauthorized data recovery from solid-state storage devices
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US20060161724A1 (en) * 2005-01-20 2006-07-20 Bennett Alan D Scheduling of housekeeping operations in flash memory systems
US7315917B2 (en) 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
JP4679943B2 (ja) * 2005-03-23 2011-05-11 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ データ記憶装置及びその不揮発性メモリ内データ書き換え処理方法
US7447078B2 (en) 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
EP1712985A1 (de) * 2005-04-15 2006-10-18 Deutsche Thomson-Brandt Gmbh Verfahren und System zum Speichern von logischen Datenblöcken in Löschblöcken in mehreren nichtflüchtigen Speichereinheiten, die an mindestens einem gemeinsamen Datenbus angeschlossen sind
US7290185B2 (en) * 2005-04-28 2007-10-30 International Business Machines Corporation Methods and apparatus for reducing memory errors
JP4991131B2 (ja) * 2005-08-12 2012-08-01 株式会社東芝 半導体記憶装置
US7698591B2 (en) * 2005-08-26 2010-04-13 International Business Machines Corporation Method and apparatus for ensuring data integrity in redundant mass storage systems
US7523381B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Non-volatile memory with error detection
JP4413840B2 (ja) * 2005-09-20 2010-02-10 株式会社東芝 記憶媒体再生装置、記憶媒体再生方法および記憶媒体再生プログラム
US8291295B2 (en) * 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7631245B2 (en) 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7954037B2 (en) * 2005-10-25 2011-05-31 Sandisk Il Ltd Method for recovering from errors in flash memory
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US20070106842A1 (en) * 2005-11-04 2007-05-10 Conley Kevin M Enhanced first level storage caching methods using nonvolatile memory
US7634585B2 (en) * 2005-11-04 2009-12-15 Sandisk Corporation In-line cache using nonvolatile memory between host and disk device
US7644251B2 (en) 2005-12-19 2010-01-05 Sigmatel, Inc. Non-volatile solid-state memory controller
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US8055979B2 (en) 2006-01-20 2011-11-08 Marvell World Trade Ltd. Flash memory with coding and signal processing
US8219886B1 (en) 2006-01-20 2012-07-10 Marvell International Ltd. High density multi-level memory
US7844879B2 (en) 2006-01-20 2010-11-30 Marvell World Trade Ltd. Method and system for error correction in flash memory
US7493523B2 (en) * 2006-03-14 2009-02-17 International Business Machines Corporation Method and apparatus for preventing soft error accumulation in register arrays
US7409490B2 (en) * 2006-04-15 2008-08-05 Yi-Chun Liu Method of flash memory management
US7433231B2 (en) * 2006-04-26 2008-10-07 Micron Technology, Inc. Multiple select gates with non-volatile memory cells
US7495966B2 (en) 2006-05-01 2009-02-24 Micron Technology, Inc. Memory voltage cycle adjustment
EP2016590B1 (de) 2006-05-05 2011-10-26 SanDisk Corporation Nicht flüchtiger speicher mit hintergrund-datensperren-caching während leseoperationen und entsprechende verfahren
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
WO2007132457A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
US20070266296A1 (en) * 2006-05-15 2007-11-15 Conley Kevin M Nonvolatile Memory with Convolutional Coding
US7840875B2 (en) * 2006-05-15 2010-11-23 Sandisk Corporation Convolutional coding methods for nonvolatile memory
JP4813264B2 (ja) * 2006-06-14 2011-11-09 株式会社日立製作所 ストレージシステム
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7486561B2 (en) * 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
JP4908083B2 (ja) * 2006-06-30 2012-04-04 株式会社東芝 メモリコントローラ
JP2008009919A (ja) * 2006-06-30 2008-01-17 Toshiba Corp カードコントローラ
CN1933026A (zh) * 2006-08-18 2007-03-21 福昭科技(深圳)有限公司 高可靠排序管理扇区的存储结构
US20080046630A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US20080046641A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US7474560B2 (en) 2006-08-21 2009-01-06 Micron Technology, Inc. Non-volatile memory with both single and multiple level cells
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
US20080072070A1 (en) * 2006-08-29 2008-03-20 General Dynamics C4 Systems, Inc. Secure virtual RAM
US7450425B2 (en) * 2006-08-30 2008-11-11 Micron Technology, Inc. Non-volatile memory cell read failure reduction
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
WO2008039692A2 (en) * 2006-09-27 2008-04-03 Sandisk Corporation Memory with cell population distribution assisted read margining
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7818653B2 (en) * 2006-09-28 2010-10-19 Sandisk Corporation Methods of soft-input soft-output decoding for nonvolatile memory
US7805663B2 (en) * 2006-09-28 2010-09-28 Sandisk Corporation Methods of adapting operation of nonvolatile memory
US7904783B2 (en) * 2006-09-28 2011-03-08 Sandisk Corporation Soft-input soft-output decoder for nonvolatile memory
US20080092015A1 (en) * 2006-09-28 2008-04-17 Yigal Brandman Nonvolatile memory with adaptive operation
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
DE602006019010D1 (de) * 2006-10-20 2011-01-27 Fujitsu Ltd Speicheranordnung und auffrisch-justierverfahren
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
KR100784007B1 (ko) * 2006-10-31 2007-12-10 주식회사 하이닉스반도체 비휘발성 메모리 장치 및 그 소거 방법
US7904788B2 (en) * 2006-11-03 2011-03-08 Sandisk Corporation Methods of varying read threshold voltage in nonvolatile memory
US7558109B2 (en) * 2006-11-03 2009-07-07 Sandisk Corporation Nonvolatile memory with variable read threshold
US7904780B2 (en) * 2006-11-03 2011-03-08 Sandisk Corporation Methods of modulating error correction coding
US8001441B2 (en) * 2006-11-03 2011-08-16 Sandisk Technologies Inc. Nonvolatile memory with modulated error correction coding
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7561465B2 (en) * 2006-12-28 2009-07-14 Advanced Micro Devices, Inc. Methods and systems for recovering data in a nonvolatile memory array
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
TW200828320A (en) * 2006-12-28 2008-07-01 Genesys Logic Inc Method for performing static wear leveling on flash memory
US8583981B2 (en) 2006-12-29 2013-11-12 Marvell World Trade Ltd. Concatenated codes for holographic storage
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
KR100823171B1 (ko) * 2007-02-01 2008-04-18 삼성전자주식회사 파티션된 플래시 변환 계층을 갖는 컴퓨터 시스템 및플래시 변환 계층의 파티션 방법
KR100813630B1 (ko) * 2007-02-07 2008-03-14 삼성전자주식회사 독출 성능을 향상할 수 있는 플래시 메모리 시스템 및그것의 독출 방법
CN101715595A (zh) * 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US7987332B2 (en) * 2007-03-21 2011-07-26 Sandisk Technologies Inc. Methods for storing memory operations in a queue
US7573773B2 (en) 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US7477547B2 (en) 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
EP2135251B1 (de) * 2007-03-28 2017-06-14 SanDisk Technologies LLC Mittels gesteuerter bereinigungsdatenlesung ausgelöste aktualisierungsverfahren für einen flash-speicher
US7904793B2 (en) * 2007-03-29 2011-03-08 Sandisk Corporation Method for decoding data in non-volatile storage using reliability metrics based on multiple reads
WO2008121553A1 (en) * 2007-03-29 2008-10-09 Sandisk Corporation Non-volatile storage with decoding of data using reliability metrics based on multiple reads
US7797480B2 (en) * 2007-03-29 2010-09-14 Sandisk Corporation Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8332574B2 (en) 2007-04-30 2012-12-11 Sandisk Il Ltd. Method for efficient storage of metadata in flash memory
US7577036B2 (en) * 2007-05-02 2009-08-18 Micron Technology, Inc. Non-volatile multilevel memory cells with data read of reference cells
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
KR20080100750A (ko) * 2007-05-14 2008-11-19 삼성전자주식회사 데이터 읽기 장치 및 그 방법
US20080285368A1 (en) * 2007-05-17 2008-11-20 Macronix International Co., Ltd. Method for nrom array word line retry erasing and threshold voltage recovering
JP4994112B2 (ja) * 2007-05-22 2012-08-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびメモリ制御方法
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
JP5216244B2 (ja) * 2007-05-31 2013-06-19 株式会社東芝 データリフレッシュ装置、及びデータリフレッシュ方法
US7765426B2 (en) 2007-06-07 2010-07-27 Micron Technology, Inc. Emerging bad block detection
KR100882841B1 (ko) * 2007-06-19 2009-02-10 삼성전자주식회사 읽기 디스터번스로 인한 비트 에러를 검출할 수 있는메모리 시스템 및 그것의 읽기 방법
KR100838292B1 (ko) * 2007-06-20 2008-06-17 삼성전자주식회사 메모리 셀의 읽기 레벨 제어 장치 및 그 방법
US8166239B2 (en) * 2007-06-21 2012-04-24 International Business Machines Corporation Translation lookaside buffer and related method and program product utilized for virtual addresses
US8504784B2 (en) * 2007-06-27 2013-08-06 Sandisk Technologies Inc. Scheduling methods of phased garbage collection and housekeeping operations in a flash memory system
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8060798B2 (en) 2007-07-19 2011-11-15 Micron Technology, Inc. Refresh of non-volatile memory cells based on fatigue conditions
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
WO2009021176A2 (en) * 2007-08-08 2009-02-12 Sandisk Corporation Urgency and time window manipulation to accommodate unpredictable memory operations
US8099632B2 (en) * 2007-08-08 2012-01-17 Sandisk Technologies Inc. Urgency and time window manipulation to accommodate unpredictable memory operations
US7770079B2 (en) * 2007-08-22 2010-08-03 Micron Technology Inc. Error scanning in flash memory
KR101425958B1 (ko) * 2007-09-06 2014-08-04 삼성전자주식회사 멀티-비트 데이터를 저장하는 메모리 시스템 및 그것의읽기 방법
US7882314B2 (en) * 2007-09-07 2011-02-01 International Business Machines Corporation Efficient scheduling of background scrub commands
US7882323B2 (en) * 2007-09-07 2011-02-01 International Business Machines Corporation Scheduling of background scrub commands to reduce high workload memory request latency
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8650352B2 (en) * 2007-09-20 2014-02-11 Densbits Technologies Ltd. Systems and methods for determining logical values of coupled flash memory cells
WO2009095902A2 (en) 2008-01-31 2009-08-06 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US7751237B2 (en) * 2007-09-25 2010-07-06 Sandisk Il, Ltd. Post-facto correction for cross coupling in a flash memory
US7551477B2 (en) * 2007-09-26 2009-06-23 Sandisk Corporation Multiple bit line voltages based on distance
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009050703A2 (en) * 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
US20090109755A1 (en) * 2007-10-24 2009-04-30 Mori Edan Neighbor block refresh for non-volatile memory
US8443242B2 (en) 2007-10-25 2013-05-14 Densbits Technologies Ltd. Systems and methods for multiple coding rates in flash devices
JP4535117B2 (ja) * 2007-11-06 2010-09-01 ソニー株式会社 メモリ装置、メモリ管理方法、およびプログラム
US7876616B2 (en) * 2007-11-12 2011-01-25 Cadence Design Systems, Inc. System and method for wear leveling utilizing a relative wear counter
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
CN101436161B (zh) * 2007-11-16 2010-12-29 创见资讯股份有限公司 存储装置与其数据存取和存储器区块管理方法
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8607128B2 (en) * 2007-12-05 2013-12-10 Densbits Technologies Ltd. Low power chien-search based BCH/RS decoding system for flash memory, mobile communications devices and other applications
WO2009072104A2 (en) * 2007-12-05 2009-06-11 Densbits Technologies Ltd. Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith
WO2009072103A2 (en) 2007-12-05 2009-06-11 Densbits Technologies Ltd. Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated bch codes and/or designation of 'first below' cells
JP2009140564A (ja) * 2007-12-06 2009-06-25 Toshiba Corp Nand型フラッシュメモリおよびメモリシステム
US8359516B2 (en) 2007-12-12 2013-01-22 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
US8276051B2 (en) 2007-12-12 2012-09-25 Densbits Technologies Ltd. Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8327246B2 (en) 2007-12-18 2012-12-04 Densbits Technologies Ltd. Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
KR101498669B1 (ko) * 2007-12-20 2015-03-19 삼성전자주식회사 반도체 메모리 시스템 및 그것의 액세스 방법
US7934052B2 (en) 2007-12-27 2011-04-26 Pliant Technology, Inc. System and method for performing host initiated mass storage commands using a hierarchy of data structures
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8301912B2 (en) 2007-12-31 2012-10-30 Sandisk Technologies Inc. System, method and memory device providing data scrambling compatible with on-chip copy operation
KR101454817B1 (ko) * 2008-01-11 2014-10-30 삼성전자주식회사 반도체 메모리 장치 및 그것의 마모도 관리 방법
CN101911207B (zh) * 2008-01-16 2014-05-07 富士通株式会社 半导体存储装置、控制装置、控制方法
PL384327A1 (pl) * 2008-01-26 2009-08-03 Atm Spółka Akcyjna Sieć danych oraz sposób regeneraji stanu zapisu plików cyfrowych w sieci danych
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
WO2009118720A2 (en) * 2008-03-25 2009-10-01 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
US7971023B2 (en) * 2008-04-30 2011-06-28 Sandisk Corporation Guaranteed memory card performance to end-of-life
US8059455B2 (en) * 2008-05-09 2011-11-15 Sandisk Il Ltd. Partial scrambling to reduce correlation
KR20110050404A (ko) * 2008-05-16 2011-05-13 퓨전-아이오, 인크. 결함 있는 데이터 저장소를 검출하고 교체하는 장치, 시스템 및 프로그램 제품
KR101486987B1 (ko) * 2008-05-21 2015-01-30 삼성전자주식회사 불휘발성 메모리를 포함하는 반도체 메모리 장치 및 불휘발성 메모리를 위한 커맨드 스케줄링 방법
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
US7808831B2 (en) * 2008-06-30 2010-10-05 Sandisk Corporation Read disturb mitigation in non-volatile memory
US7971007B2 (en) * 2008-07-08 2011-06-28 Silicon Motion, Inc. Downgrade memory apparatus, and method for accessing a downgrade memory
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
JP5478855B2 (ja) * 2008-08-08 2014-04-23 ルネサスエレクトロニクス株式会社 不揮発性メモリ制御方法及び半導体装置
CN101650974B (zh) * 2008-08-12 2012-12-19 创见资讯股份有限公司 可自我检测使用状态的储存装置及其检测方法
US8332725B2 (en) 2008-08-20 2012-12-11 Densbits Technologies Ltd. Reprogramming non volatile memory portions
US8213229B2 (en) * 2008-08-22 2012-07-03 HGST Netherlands, B.V. Error control in a flash memory device
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
TWI389122B (zh) * 2008-10-30 2013-03-11 Silicon Motion Inc 用來存取一快閃記憶體之方法以及相關之記憶裝置及其控制器
CN101740123B (zh) * 2008-11-10 2012-04-04 扬智科技股份有限公司 存储器的数据保护方法
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
CN102855943B (zh) * 2008-11-28 2017-04-12 群联电子股份有限公司 错误校正控制器及其闪存芯片系统与错误校正方法
US7859932B2 (en) * 2008-12-18 2010-12-28 Sandisk Corporation Data refresh for non-volatile storage
US8316201B2 (en) * 2008-12-18 2012-11-20 Sandisk Il Ltd. Methods for executing a command to write data from a source location to a destination location in a memory device
US8291297B2 (en) * 2008-12-18 2012-10-16 Intel Corporation Data error recovery in non-volatile memory
JP4551958B2 (ja) * 2008-12-22 2010-09-29 株式会社東芝 半導体記憶装置および半導体記憶装置の制御方法
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8244960B2 (en) * 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8924819B2 (en) * 2009-01-23 2014-12-30 Macronix International Co., Ltd. Memory device and operation method thereof
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8458574B2 (en) * 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US9116830B2 (en) * 2009-04-29 2015-08-25 Texas Instruments Incorporated Method to extend data retention for flash based storage in a real time device processed on generic semiconductor technology
US8255613B2 (en) 2009-04-30 2012-08-28 International Business Machines Corporation Wear-leveling and bad block management of limited lifetime memory devices
US8566510B2 (en) 2009-05-12 2013-10-22 Densbits Technologies Ltd. Systems and method for flash memory management
US8281227B2 (en) 2009-05-18 2012-10-02 Fusion-10, Inc. Apparatus, system, and method to increase data integrity in a redundant storage system
US8307258B2 (en) 2009-05-18 2012-11-06 Fusion-10, Inc Apparatus, system, and method for reconfiguring an array to operate with less storage elements
US8775865B2 (en) 2009-06-24 2014-07-08 Headway Technologies, Inc. Method and apparatus for scrubbing accumulated disturb data errors in an array of SMT MRAM memory cells including rewriting reference bits
US9170879B2 (en) * 2009-06-24 2015-10-27 Headway Technologies, Inc. Method and apparatus for scrubbing accumulated data errors from a memory system
US8261136B2 (en) * 2009-06-29 2012-09-04 Sandisk Technologies Inc. Method and device for selectively refreshing a region of a memory of a data storage device
US8321727B2 (en) * 2009-06-29 2012-11-27 Sandisk Technologies Inc. System and method responsive to a rate of change of a performance parameter of a memory
US8255773B2 (en) * 2009-06-29 2012-08-28 Sandisk Technologies Inc. System and method of tracking error data within a storage device
US20100332922A1 (en) * 2009-06-30 2010-12-30 Mediatek Inc. Method for managing device and solid state disk drive utilizing the same
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US20110035540A1 (en) * 2009-08-10 2011-02-10 Adtron, Inc. Flash blade system architecture and method
US20110040924A1 (en) 2009-08-11 2011-02-17 Selinger Robert D Controller and Method for Detecting a Transmission Error Over a NAND Interface Using Error Detection Code
US20110041039A1 (en) 2009-08-11 2011-02-17 Eliyahou Harari Controller and Method for Interfacing Between a Host Controller in a Host and a Flash Memory Device
US20110041005A1 (en) 2009-08-11 2011-02-17 Selinger Robert D Controller and Method for Providing Read Status and Spare Block Management Information in a Flash Memory System
US20110047322A1 (en) * 2009-08-19 2011-02-24 Ocz Technology Group, Inc. Methods, systems and devices for increasing data retention on solid-state mass storage devices
US8370720B2 (en) * 2009-08-19 2013-02-05 Ocz Technology Group, Inc. Mass storage device and method for offline background scrubbing of solid-state memory devices
US8910002B2 (en) * 2009-08-24 2014-12-09 OCZ Storage Solutions Inc. NAND flash-based storage device with built-in test-ahead for failure anticipation
KR20120059506A (ko) * 2009-08-25 2012-06-08 샌디스크 아이엘 엘티디 플래시 저장 디바이스로의 데이터 복원
US8868821B2 (en) 2009-08-26 2014-10-21 Densbits Technologies Ltd. Systems and methods for pre-equalization and code design for a flash memory
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US8305812B2 (en) * 2009-08-26 2012-11-06 Densbits Technologies Ltd. Flash memory module and method for programming a page of flash memory cells
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8743629B2 (en) 2009-08-31 2014-06-03 Sandisk Il Ltd. Preloading data into a flash storage device
US20110059628A1 (en) * 2009-09-04 2011-03-10 Solid State System Co., Ltd. Secure digital card with two micro-sd cards in striping data access
KR101678909B1 (ko) * 2009-09-17 2016-11-23 삼성전자주식회사 플래시 메모리 시스템 및 그것의 소거 리프레쉬 방법
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US8504884B2 (en) * 2009-10-29 2013-08-06 Freescale Semiconductor, Inc. Threshold voltage techniques for detecting an imminent read failure in a memory array
JP5349256B2 (ja) 2009-11-06 2013-11-20 株式会社東芝 メモリシステム
US8769188B2 (en) * 2009-11-18 2014-07-01 Mediatek Inc. Nonvolatile memory controller and method for writing data to nonvolatile memory
US8626988B2 (en) * 2009-11-19 2014-01-07 Densbits Technologies Ltd. System and method for uncoded bit error rate equalization via interleaving
US8473809B2 (en) * 2009-11-20 2013-06-25 Sandisk Technologies Inc. Data coding for improved ECC efficiency
US8495281B2 (en) * 2009-12-04 2013-07-23 International Business Machines Corporation Intra-block memory wear leveling
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US20110153912A1 (en) * 2009-12-18 2011-06-23 Sergey Anatolievich Gorobets Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US9037777B2 (en) * 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
TWI416331B (zh) * 2009-12-23 2013-11-21 Phison Electronics Corp 用於快閃記憶體的資料寫入方法及其控制器與儲存裝置
US8607124B2 (en) * 2009-12-24 2013-12-10 Densbits Technologies Ltd. System and method for setting a flash memory cell read threshold
KR101090394B1 (ko) * 2009-12-24 2011-12-07 주식회사 하이닉스반도체 예비 영역을 유동적으로 관리하는 반도체 스토리지 시스템 및 그 제어 방법
US8443263B2 (en) * 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
US8595411B2 (en) 2009-12-30 2013-11-26 Sandisk Technologies Inc. Method and controller for performing a sequence of commands
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
KR101648531B1 (ko) * 2010-02-12 2016-08-17 삼성전자주식회사 불휘발성 메모리 시스템과 이의 동작 방법
KR101655306B1 (ko) * 2010-02-24 2016-09-07 삼성전자주식회사 메모리 시스템 및 그것의 액세스 방법
US8700970B2 (en) * 2010-02-28 2014-04-15 Densbits Technologies Ltd. System and method for multi-dimensional decoding
US8365041B2 (en) * 2010-03-17 2013-01-29 Sandisk Enterprise Ip Llc MLC self-raid flash data protection scheme
US8527840B2 (en) 2010-04-06 2013-09-03 Densbits Technologies Ltd. System and method for restoring damaged data programmed on a flash device
US8516274B2 (en) 2010-04-06 2013-08-20 Densbits Technologies Ltd. Method, system and medium for analog encryption in a flash memory
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
US9183134B2 (en) * 2010-04-22 2015-11-10 Seagate Technology Llc Data segregation in a storage device
US9021177B2 (en) 2010-04-29 2015-04-28 Densbits Technologies Ltd. System and method for allocating and using spare blocks in a flash memory
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8452937B2 (en) 2010-05-14 2013-05-28 Sandisk Il Ltd. Moving executable code from a first region of a non-volatile memory to a second region of the non-volatile memory to reduce read disturb
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8621321B2 (en) 2010-07-01 2013-12-31 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US8539311B2 (en) 2010-07-01 2013-09-17 Densbits Technologies Ltd. System and method for data recovery in multi-level cell memories
US8819503B2 (en) * 2010-07-02 2014-08-26 Stec, Inc. Apparatus and method for determining an operating condition of a memory cell based on cycle information
US20120008414A1 (en) 2010-07-06 2012-01-12 Michael Katz Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
US8737141B2 (en) 2010-07-07 2014-05-27 Stec, Inc. Apparatus and method for determining an operating condition of a memory cell based on cycle information
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8737136B2 (en) 2010-07-09 2014-05-27 Stec, Inc. Apparatus and method for determining a read level of a memory cell based on cycle information
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US8508995B2 (en) 2010-09-15 2013-08-13 Densbits Technologies Ltd. System and method for adjusting read voltage thresholds in memories
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US8452911B2 (en) 2010-09-30 2013-05-28 Sandisk Technologies Inc. Synchronized maintenance operations in a multi-bank storage system
WO2012048118A2 (en) 2010-10-06 2012-04-12 Blackbird Technology Holdings, Inc. Method and apparatus for adaptive searching of distributed datasets
US9042353B2 (en) 2010-10-06 2015-05-26 Blackbird Technology Holdings, Inc. Method and apparatus for low-power, long-range networking
US8718551B2 (en) 2010-10-12 2014-05-06 Blackbird Technology Holdings, Inc. Method and apparatus for a multi-band, multi-mode smartcard
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
WO2012068227A1 (en) 2010-11-16 2012-05-24 Blackbird Technology Holdings, Inc. Method and apparatus for interfacing with a smartcard
US8479062B2 (en) * 2010-12-03 2013-07-02 International Business Machines Corporation Program disturb error logging and correction for flash memory
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
JP2012133642A (ja) * 2010-12-22 2012-07-12 Sony Corp メモリ装置、メモリ制御方法、およびプログラム
US8819328B2 (en) 2010-12-30 2014-08-26 Sandisk Technologies Inc. Controller and method for performing background operations
WO2012100145A1 (en) * 2011-01-21 2012-07-26 Blackbird Technology Holdings, Inc. Method and apparatus for memory management
JP5917163B2 (ja) * 2011-01-27 2016-05-11 キヤノン株式会社 情報処理装置、その制御方法及びプログラム並びに記憶媒体
US8886990B2 (en) * 2011-01-27 2014-11-11 Apple Inc. Block management schemes in hybrid SLC/MLC memory
US20120203993A1 (en) * 2011-02-08 2012-08-09 SMART Storage Systems, Inc. Memory system with tiered queuing and method of operation thereof
US8909851B2 (en) 2011-02-08 2014-12-09 SMART Storage Systems, Inc. Storage control system with change logging mechanism and method of operation thereof
US8484542B2 (en) * 2011-02-08 2013-07-09 Sandisk Technologies Inc. Data recovery using additional error correction coding data
WO2012112650A1 (en) 2011-02-15 2012-08-23 Blackbird Technology Holdings, Inc. Method and apparatus for plug and play, networkable iso 18000-7 connectivity
US10079068B2 (en) 2011-02-23 2018-09-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Devices and method for wear estimation based memory management
US9497715B2 (en) 2011-03-02 2016-11-15 Blackbird Technology Holdings, Inc. Method and apparatus for addressing in a resource-constrained network
US8693258B2 (en) 2011-03-17 2014-04-08 Densbits Technologies Ltd. Obtaining soft information using a hard interface
JP2012198949A (ja) * 2011-03-18 2012-10-18 Toshiba Corp 半導体記憶装置
US8935466B2 (en) 2011-03-28 2015-01-13 SMART Storage Systems, Inc. Data storage system with non-volatile memory and method of operation thereof
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US9047955B2 (en) 2011-03-30 2015-06-02 Stec, Inc. Adjusting operating parameters for memory cells based on wordline address and cycle information
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
US8484521B2 (en) * 2011-04-07 2013-07-09 International Business Machines Corporation Firmware monitoring of memory scrub coverage
KR101467939B1 (ko) 2011-04-26 2014-12-02 엘에스아이 코포레이션 비휘발성 저장부에 대한 가변 오버­프로비저닝
JP2012230581A (ja) * 2011-04-27 2012-11-22 Mitsubishi Electric Corp データ記憶装置
US9337872B2 (en) 2011-04-30 2016-05-10 Rambus Inc. Configurable, error-tolerant memory control
KR101678919B1 (ko) 2011-05-02 2016-11-24 삼성전자주식회사 메모리 시스템 및 에러 정정 방법
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US8825944B2 (en) 2011-05-23 2014-09-02 International Business Machines Corporation Populating strides of tracks to demote from a first cache to a second cache
CN102163165B (zh) * 2011-05-26 2012-11-14 忆正存储技术(武汉)有限公司 一种闪存错误预估模块及其预估方法
US8667211B2 (en) 2011-06-01 2014-03-04 Densbits Technologies Ltd. System and method for managing a non-volatile memory
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
US8694719B2 (en) 2011-06-24 2014-04-08 Sandisk Technologies Inc. Controller, storage device, and method for power throttling memory operations
US8929961B2 (en) 2011-07-15 2015-01-06 Blackbird Technology Holdings, Inc. Protective case for adding wireless functionality to a handheld electronic device
US8669889B2 (en) 2011-07-21 2014-03-11 International Business Machines Corporation Using variable length code tables to compress an input data stream to a compressed output data stream
US8400335B2 (en) 2011-07-21 2013-03-19 International Business Machines Corporation Using variable length code tables to compress an input data stream to a compressed output data stream
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8588003B1 (en) 2011-08-01 2013-11-19 Densbits Technologies Ltd. System, method and computer program product for programming and for recovering from a power failure
WO2013030866A1 (en) * 2011-08-29 2013-03-07 Hitachi, Ltd. Semiconductor storage device comprising electrically rewritable nonvolatile semiconductor memory
JP2013054409A (ja) * 2011-08-31 2013-03-21 Toshiba Corp 情報記憶装置および情報記憶方法
US9098399B2 (en) 2011-08-31 2015-08-04 SMART Storage Systems, Inc. Electronic system with storage management mechanism and method of operation thereof
US9063844B2 (en) 2011-09-02 2015-06-23 SMART Storage Systems, Inc. Non-volatile memory management system with time measure mechanism and method of operation thereof
US9021231B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Storage control system with write amplification control mechanism and method of operation thereof
US9021319B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Non-volatile memory management system with load leveling and method of operation thereof
JP5821445B2 (ja) * 2011-09-09 2015-11-24 富士通株式会社 ディスクアレイ装置及びディスクアレイ装置制御方法
US8553468B2 (en) 2011-09-21 2013-10-08 Densbits Technologies Ltd. System and method for managing erase operations in a non-volatile memory
KR20130049332A (ko) * 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
US9058289B2 (en) 2011-11-07 2015-06-16 Sandisk Enterprise Ip Llc Soft information generation for memory systems
US9081663B2 (en) * 2011-11-18 2015-07-14 Stec, Inc. Optimized garbage collection algorithm to improve solid state drive reliability
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
KR101893145B1 (ko) 2011-12-06 2018-10-05 삼성전자주식회사 메모리 시스템들 및 그것들의 블록 복사 방법들
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
US8692696B2 (en) 2012-01-03 2014-04-08 International Business Machines Corporation Generating a code alphabet of symbols to generate codewords for words used with a program
US9767032B2 (en) 2012-01-12 2017-09-19 Sandisk Technologies Llc Systems and methods for cache endurance
US8825957B2 (en) * 2012-01-17 2014-09-02 International Business Machines Corporation Demoting tracks from a first cache to a second cache by using an occupancy of valid tracks in strides in the second cache to consolidate strides in the second cache
US9021201B2 (en) 2012-01-17 2015-04-28 International Business Machines Corporation Demoting partial tracks from a first cache to a second cache
US8825953B2 (en) 2012-01-17 2014-09-02 International Business Machines Corporation Demoting tracks from a first cache to a second cache by using a stride number ordering of strides in the second cache to consolidate strides in the second cache
US8966178B2 (en) 2012-01-17 2015-02-24 International Business Machines Corporation Populating a first stride of tracks from a first cache to write to a second stride in a second cache
US9239781B2 (en) 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US9195586B2 (en) 2012-02-23 2015-11-24 Hgst Technologies Santa Ana, Inc. Determining bias information for offsetting operating variations in memory cells based on wordline address
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US9362003B2 (en) * 2012-03-09 2016-06-07 Sandisk Technologies Inc. System and method to decode data subject to a disturb condition
US20130262942A1 (en) * 2012-03-27 2013-10-03 Yung-Chiang Chu Flash memory lifetime evaluation method
US9298252B2 (en) 2012-04-17 2016-03-29 SMART Storage Systems, Inc. Storage control system with power down mechanism and method of operation thereof
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US8949689B2 (en) 2012-06-11 2015-02-03 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US9699263B1 (en) 2012-08-17 2017-07-04 Sandisk Technologies Llc. Automatic read and write acceleration of data accessed by virtual machines
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
US8914696B2 (en) * 2012-08-29 2014-12-16 Seagate Technology Llc Flash memory read scrub and channel tracking
US9164526B2 (en) 2012-09-27 2015-10-20 Sandisk Technologies Inc. Sigma delta over-sampling charge pump analog-to-digital converter
US9810723B2 (en) 2012-09-27 2017-11-07 Sandisk Technologies Llc Charge pump based over-sampling ADC for current detection
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
KR102025263B1 (ko) 2012-10-05 2019-09-25 삼성전자주식회사 메모리 시스템 및 그것의 읽기 교정 방법
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
US9171620B2 (en) 2012-11-29 2015-10-27 Sandisk Technologies Inc. Weighted read scrub for nonvolatile memory
US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
US9032271B2 (en) * 2012-12-07 2015-05-12 Western Digital Technologies, Inc. System and method for lower page data recovery in a solid state drive
US9501398B2 (en) 2012-12-26 2016-11-22 Sandisk Technologies Llc Persistent storage device with NVRAM for staging writes
US9612948B2 (en) 2012-12-27 2017-04-04 Sandisk Technologies Llc Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device
US9239751B1 (en) 2012-12-27 2016-01-19 Sandisk Enterprise Ip Llc Compressing data from multiple reads for error control management in memory systems
US9454420B1 (en) 2012-12-31 2016-09-27 Sandisk Technologies Llc Method and system of reading threshold voltage equalization
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
US9070479B2 (en) 2013-01-21 2015-06-30 Sandisk Technologies Inc. Systems and methods of updating read voltages
US9123445B2 (en) 2013-01-22 2015-09-01 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US10445229B1 (en) 2013-01-28 2019-10-15 Radian Memory Systems, Inc. Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies
US9652376B2 (en) * 2013-01-28 2017-05-16 Radian Memory Systems, Inc. Cooperative flash memory control
US11249652B1 (en) * 2013-01-28 2022-02-15 Radian Memory Systems, Inc. Maintenance of nonvolatile memory on host selected namespaces by a common memory controller
US9098205B2 (en) 2013-01-30 2015-08-04 Sandisk Technologies Inc. Data randomization in 3-D memory
KR102089532B1 (ko) 2013-02-06 2020-03-16 삼성전자주식회사 메모리 컨트롤러, 메모리 시스템 및 메모리 시스템의 동작 방법
US9214965B2 (en) 2013-02-20 2015-12-15 Sandisk Enterprise Ip Llc Method and system for improving data integrity in non-volatile storage
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
US9183137B2 (en) 2013-02-27 2015-11-10 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9470720B2 (en) 2013-03-08 2016-10-18 Sandisk Technologies Llc Test system with localized heating and method of manufacture thereof
US9870830B1 (en) 2013-03-14 2018-01-16 Sandisk Technologies Llc Optimal multilevel sensing for reading data from a storage medium
US9367391B2 (en) 2013-03-15 2016-06-14 Micron Technology, Inc. Error correction operations in a memory device
US9136877B1 (en) 2013-03-15 2015-09-15 Sandisk Enterprise Ip Llc Syndrome layered decoding for LDPC codes
US9236886B1 (en) 2013-03-15 2016-01-12 Sandisk Enterprise Ip Llc Universal and reconfigurable QC-LDPC encoder
US9092350B1 (en) 2013-03-15 2015-07-28 Sandisk Enterprise Ip Llc Detection and handling of unbalanced errors in interleaved codewords
US10042750B2 (en) 2013-03-15 2018-08-07 Micron Technology, Inc. Apparatuses and methods for adaptive control of memory using an adaptive memory controller with a memory management hypervisor
US9244763B1 (en) 2013-03-15 2016-01-26 Sandisk Enterprise Ip Llc System and method for updating a reading threshold voltage based on symbol transition information
US9367246B2 (en) 2013-03-15 2016-06-14 Sandisk Technologies Inc. Performance optimization of data transfer for soft information generation
US9043780B2 (en) 2013-03-27 2015-05-26 SMART Storage Systems, Inc. Electronic system with system modification control mechanism and method of operation thereof
US9170941B2 (en) 2013-04-05 2015-10-27 Sandisk Enterprises IP LLC Data hardening in a storage system
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9543025B2 (en) 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
JP6167646B2 (ja) * 2013-04-30 2017-07-26 富士通株式会社 情報処理装置、制御回路、制御プログラム、および制御方法
US9159437B2 (en) 2013-06-11 2015-10-13 Sandisk Enterprise IP LLC. Device and method for resolving an LM flag issue
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
US9898056B2 (en) 2013-06-19 2018-02-20 Sandisk Technologies Llc Electronic assembly with thermal channel and method of manufacture thereof
US9313874B2 (en) 2013-06-19 2016-04-12 SMART Storage Systems, Inc. Electronic system with heat extraction and method of manufacture thereof
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
US9230656B2 (en) 2013-06-26 2016-01-05 Sandisk Technologies Inc. System for maintaining back gate threshold voltage in three dimensional NAND memory
US9727413B2 (en) 2013-06-28 2017-08-08 International Business Machines Corporation Flash memory scrub management
US9384126B1 (en) 2013-07-25 2016-07-05 Sandisk Technologies Inc. Methods and systems to avoid false negative results in bloom filters implemented in non-volatile data storage systems
US9524235B1 (en) 2013-07-25 2016-12-20 Sandisk Technologies Llc Local hash value generation in non-volatile data storage systems
US9710335B2 (en) 2013-07-31 2017-07-18 Hewlett Packard Enterprise Development Lp Versioned memory Implementation
US9146850B2 (en) 2013-08-01 2015-09-29 SMART Storage Systems, Inc. Data storage system with dynamic read threshold mechanism and method of operation thereof
US9569354B2 (en) * 2013-08-02 2017-02-14 Infineon Technologies Ag System and method to emulate an electrically erasable programmable read-only memory
US9431113B2 (en) 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9361221B1 (en) 2013-08-26 2016-06-07 Sandisk Technologies Inc. Write amplification reduction through reliable writes during garbage collection
US9639463B1 (en) 2013-08-26 2017-05-02 Sandisk Technologies Llc Heuristic aware garbage collection scheme in storage systems
CN110232942B (zh) 2013-09-13 2023-01-03 铠侠股份有限公司 存储装置及其控制方法
US9240238B2 (en) 2013-09-20 2016-01-19 Sandisk Technologies Inc. Back gate operation with elevated threshold voltage
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9442662B2 (en) 2013-10-18 2016-09-13 Sandisk Technologies Llc Device and method for managing die groups
US9298608B2 (en) 2013-10-18 2016-03-29 Sandisk Enterprise Ip Llc Biasing for wear leveling in storage systems
US20150121156A1 (en) 2013-10-28 2015-04-30 Sandisk Technologies Inc. Block Structure Profiling in Three Dimensional Memory
US9436831B2 (en) 2013-10-30 2016-09-06 Sandisk Technologies Llc Secure erase in a memory device
US9263156B2 (en) 2013-11-07 2016-02-16 Sandisk Enterprise Ip Llc System and method for adjusting trip points within a storage device
US9329802B2 (en) 2013-11-11 2016-05-03 Qualcomm Incorporated Fail safe refresh of data stored in NAND memory device
US9244785B2 (en) 2013-11-13 2016-01-26 Sandisk Enterprise Ip Llc Simulated power failure and data hardening
US9152555B2 (en) 2013-11-15 2015-10-06 Sandisk Enterprise IP LLC. Data management with modular erase in a data storage system
US9703816B2 (en) 2013-11-19 2017-07-11 Sandisk Technologies Llc Method and system for forward reference logging in a persistent datastore
US9520197B2 (en) 2013-11-22 2016-12-13 Sandisk Technologies Llc Adaptive erase of a storage device
US9535777B2 (en) 2013-11-22 2017-01-03 Intel Corporation Defect management policies for NAND flash memory
US9229644B2 (en) 2013-11-25 2016-01-05 Sandisk Technologies Inc. Targeted copy of data relocation
US9520162B2 (en) 2013-11-27 2016-12-13 Sandisk Technologies Llc DIMM device controller supervisor
US9582058B2 (en) 2013-11-29 2017-02-28 Sandisk Technologies Llc Power inrush management of storage devices
US9235245B2 (en) 2013-12-04 2016-01-12 Sandisk Enterprise Ip Llc Startup performance and power isolation
US9129665B2 (en) 2013-12-17 2015-09-08 Sandisk Enterprise Ip Llc Dynamic brownout adjustment in a storage device
US9389956B2 (en) 2014-01-10 2016-07-12 International Business Machines Corporation Implementing ECC control for enhanced endurance and data retention of flash memories
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
KR102069274B1 (ko) 2014-02-05 2020-01-22 삼성전자주식회사 메모리 제어 방법
US9703636B2 (en) 2014-03-01 2017-07-11 Sandisk Technologies Llc Firmware reversion trigger and control
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9448876B2 (en) 2014-03-19 2016-09-20 Sandisk Technologies Llc Fault detection and prediction in storage devices
US9390814B2 (en) 2014-03-19 2016-07-12 Sandisk Technologies Llc Fault detection and prediction for data storage elements
US9454448B2 (en) 2014-03-19 2016-09-27 Sandisk Technologies Llc Fault testing in storage devices
US9390021B2 (en) 2014-03-31 2016-07-12 Sandisk Technologies Llc Efficient cache utilization in a tiered data structure
US9626399B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Conditional updates for reducing frequency of data modification operations
US9626400B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Compaction of information in tiered data structure
US9697267B2 (en) 2014-04-03 2017-07-04 Sandisk Technologies Llc Methods and systems for performing efficient snapshots in tiered data structures
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US9703491B2 (en) 2014-05-30 2017-07-11 Sandisk Technologies Llc Using history of unaligned writes to cache data and avoid read-modify-writes in a non-volatile storage device
US9070481B1 (en) 2014-05-30 2015-06-30 Sandisk Technologies Inc. Internal current measurement for age measurements
US10146448B2 (en) 2014-05-30 2018-12-04 Sandisk Technologies Llc Using history of I/O sequences to trigger cached read ahead in a non-volatile storage device
US10656842B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Using history of I/O sizes and I/O sequences to trigger coalesced writes in a non-volatile storage device
US10162748B2 (en) 2014-05-30 2018-12-25 Sandisk Technologies Llc Prioritizing garbage collection and block allocation based on I/O history for logical address regions
US10114557B2 (en) 2014-05-30 2018-10-30 Sandisk Technologies Llc Identification of hot regions to enhance performance and endurance of a non-volatile storage device
US10372613B2 (en) 2014-05-30 2019-08-06 Sandisk Technologies Llc Using sub-region I/O history to cache repeatedly accessed sub-regions in a non-volatile storage device
US10656840B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Real-time I/O pattern recognition to enhance performance and endurance of a storage device
US8918577B1 (en) 2014-06-13 2014-12-23 Sandisk Technologies Inc. Three dimensional nonvolatile memory with variable block capacity
US9652381B2 (en) 2014-06-19 2017-05-16 Sandisk Technologies Llc Sub-block garbage collection
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
KR102318561B1 (ko) 2014-08-19 2021-11-01 삼성전자주식회사 스토리지 장치, 스토리지 장치의 동작 방법
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9443601B2 (en) 2014-09-08 2016-09-13 Sandisk Technologies Llc Holdup capacitor energy harvesting
US9542118B1 (en) * 2014-09-09 2017-01-10 Radian Memory Systems, Inc. Expositive flash memory control
US10552085B1 (en) * 2014-09-09 2020-02-04 Radian Memory Systems, Inc. Techniques for directed data migration
KR102128406B1 (ko) 2014-09-26 2020-07-10 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
KR102263046B1 (ko) 2014-10-29 2021-06-09 삼성전자주식회사 메모리 장치, 메모리 시스템, 상기 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법
KR102287760B1 (ko) 2014-10-29 2021-08-09 삼성전자주식회사 메모리 시스템 및 상기 메모리 시스템의 동작 방법
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
KR102252378B1 (ko) 2014-10-29 2021-05-14 삼성전자주식회사 메모리 장치, 메모리 시스템, 상기 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US20160188495A1 (en) * 2014-12-26 2016-06-30 Intel Corporation Event triggered erasure for data security
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US10032223B2 (en) 2015-03-20 2018-07-24 Bank Of America Corporation System for account linking and future event integration into retirement score calculation
US10049406B2 (en) 2015-03-20 2018-08-14 Bank Of America Corporation System for sharing retirement scores between social groups of customers
US10019760B2 (en) 2015-03-20 2018-07-10 Bank Of America Corporation System for utilizing a retirement score to receive benefits
US9830660B2 (en) 2015-03-20 2017-11-28 Bank Of America Corporation System for augmenting a retirement score with health information
US9773563B2 (en) * 2015-03-27 2017-09-26 Toshiba Memory Corporation Memory controller, memory control method, and coefficient decision method
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
KR102291806B1 (ko) * 2015-04-20 2021-08-24 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
US9823962B2 (en) * 2015-04-22 2017-11-21 Nxp Usa, Inc. Soft error detection in a memory system
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
CN107636623A (zh) 2015-06-30 2018-01-26 惠普发展公司,有限责任合伙企业 基于电力状态的巡查刷洗时段
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
US9864653B2 (en) 2015-07-30 2018-01-09 International Business Machines Corporation Memory scrubbing in a mirrored memory system to reduce system power consumption
DE102015215401B4 (de) 2015-08-12 2020-10-01 Infineon Technologies Ag Speichervorrichtung und Verfahren zum Korrigieren einer gespeicherten Bitfolge
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US9910730B2 (en) * 2015-10-21 2018-03-06 Sandisk Technologies Llc System for handling erratic word lines for non-volatile memory
FR3044818B1 (fr) * 2015-12-02 2018-03-30 Stmicroelectronics (Rousset) Sas Procede de gestion d'une ligne defectueuse du plan memoire d'une memoire non volatile et dispositif de memoire correspondant
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory
US9698676B1 (en) 2016-03-11 2017-07-04 Sandisk Technologies Llc Charge pump based over-sampling with uniform step size for current detection
TWI594126B (zh) 2016-07-05 2017-08-01 慧榮科技股份有限公司 資料儲存裝置與資料儲存方法
US10013192B2 (en) 2016-08-17 2018-07-03 Nxp Usa, Inc. Soft error detection in a memory system
KR20180035981A (ko) * 2016-09-29 2018-04-09 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
US10261876B2 (en) * 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
US10216570B2 (en) * 2017-01-31 2019-02-26 Winbond Electronics Corporation Memory device and control method thereof
KR20180122087A (ko) * 2017-05-02 2018-11-12 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
US10008278B1 (en) * 2017-06-11 2018-06-26 Apple Inc. Memory block usage based on block location relative to array edge
US10976936B2 (en) 2017-08-23 2021-04-13 Micron Technology, Inc. Sensing operations in memory
US10446197B2 (en) * 2017-08-31 2019-10-15 Micron Technology, Inc. Optimized scan interval
JP2019079377A (ja) * 2017-10-26 2019-05-23 東芝メモリ株式会社 半導体記憶装置
US10817392B1 (en) * 2017-11-01 2020-10-27 Pure Storage, Inc. Ensuring resiliency to storage device failures in a storage system that includes a plurality of storage devices
WO2019102656A1 (ja) * 2017-11-21 2019-05-31 ソニーセミコンダクタソリューションズ株式会社 メモリコントローラ、メモリ、メモリシステム、情報処理システム、および、それらにおける制御方法
US10304550B1 (en) 2017-11-29 2019-05-28 Sandisk Technologies Llc Sense amplifier with negative threshold sensing for non-volatile memory
CN107992431A (zh) * 2017-12-21 2018-05-04 珠海亿智电子科技有限公司 一种nand闪存无效数据回收的掉电保护方法
TWI659426B (zh) 2018-03-09 2019-05-11 旺宏電子股份有限公司 記憶體裝置之資料探測方法
CN110265083B (zh) * 2018-03-12 2021-07-27 旺宏电子股份有限公司 存储器装置的数据探测方法
JP6991084B2 (ja) * 2018-03-22 2022-01-12 キオクシア株式会社 不揮発性メモリデバイス及び制御方法
US10691532B2 (en) 2018-06-29 2020-06-23 Alibaba Group Holding Limited Storage drive error-correcting code-assisted scrubbing for dynamic random-access memory retention time handling
US10936199B2 (en) * 2018-07-17 2021-03-02 Silicon Motion, Inc. Flash controllers, methods, and corresponding storage devices capable of rapidly/fast generating or updating contents of valid page count table
US11094383B2 (en) * 2018-08-24 2021-08-17 International Business Machines Corporation Selective page calibration based on hierarchical page mapping
US20200073759A1 (en) * 2018-09-05 2020-03-05 Hewlett Packard Enterprise Development Lp Maximum data recovery of scalable persistent memory
US10896088B2 (en) * 2018-11-15 2021-01-19 Seagate Technology Llc Metadata recovery mechanism for page storage
US10643695B1 (en) 2019-01-10 2020-05-05 Sandisk Technologies Llc Concurrent multi-state program verify for non-volatile memory
US11169730B2 (en) * 2019-06-06 2021-11-09 Micron Technology, Inc. Scrub rate control for a memory device
US10937510B2 (en) * 2019-06-28 2021-03-02 Western Digital Technologies, Inc. Multidimensional pseudorandom binary sequence analysis for a memory device
US10922012B1 (en) * 2019-09-03 2021-02-16 Dropbox, Inc. Fair data scrubbing in a data storage system
CN112506420A (zh) * 2019-09-16 2021-03-16 伊姆西Ip控股有限责任公司 在存储系统中管理擦洗操作的方法、设备和产品
CN110750467B (zh) * 2019-10-22 2021-11-02 深圳芯邦科技股份有限公司 一种Nand Flash中干扰页的检测方法、系统
US11557366B2 (en) 2019-11-21 2023-01-17 SK Hynix Inc. Memory, memory system, operation method of the memory, and operation of the memory system
US11024392B1 (en) 2019-12-23 2021-06-01 Sandisk Technologies Llc Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory
WO2022058768A1 (en) * 2020-09-21 2022-03-24 Micron Technology, Inc Memory apparatus and method for operating the same
CN112083891B (zh) * 2020-09-22 2022-12-06 深圳芯邦科技股份有限公司 一种存储器中数据块的检测方法及相关设备
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139911A (en) * 1978-03-13 1979-02-13 Westinghouse Electric Corp. High speed sense circuit for semiconductor memories
US4218764A (en) * 1978-10-03 1980-08-19 Matsushita Electric Industrial Co., Ltd. Non-volatile memory refresh control circuit
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
JPS58139399A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 半導体記憶装置
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
JPS6134793A (ja) * 1984-07-27 1986-02-19 Hitachi Ltd ダイナミツクメモリ装置における診断及びエラ−訂正装置
US4612630A (en) * 1984-07-27 1986-09-16 Harris Corporation EEPROM margin testing design
JPS6148197A (ja) * 1984-08-13 1986-03-08 Fujitsu Ltd チヤ−ジアツプ回路
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
EP0198935A1 (de) * 1985-04-23 1986-10-29 Deutsche ITT Industries GmbH Elektrisch umprogrammierbarer Halbleiterspeicher mit Redundanz
US4962322A (en) * 1988-12-05 1990-10-09 Texas Instruments Incorporated Nonvolatible capacitor random access memory
JPS62114200A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体メモリ装置
US5157629A (en) * 1985-11-22 1992-10-20 Hitachi, Ltd. Selective application of voltages for testing storage cells in semiconductor memory arrangements
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
JPH0715799B2 (ja) * 1987-06-30 1995-02-22 日本電気株式会社 半導体記憶装置
FR2618579B1 (fr) * 1987-07-21 1989-11-10 Thomson Semiconducteurs Circuit integre a memoire comportant un dispositif anti-fraude
JPS6476596A (en) * 1987-09-18 1989-03-22 Oki Electric Ind Co Ltd Error of eeprom detecting device
US4809231A (en) * 1987-11-12 1989-02-28 Motorola, Inc. Method and apparatus for post-packaging testing of one-time programmable memories
FR2630573B1 (fr) * 1988-04-26 1990-07-13 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
JPH07105146B2 (ja) * 1988-07-29 1995-11-13 三菱電機株式会社 不揮発性記憶装置
US5070032A (en) * 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
JPH02260298A (ja) * 1989-03-31 1990-10-23 Oki Electric Ind Co Ltd 不揮発性多値メモリ装置
US4980859A (en) * 1989-04-07 1990-12-25 Xicor, Inc. NOVRAM cell using two differential decouplable nonvolatile memory elements
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
JPH0664918B2 (ja) * 1989-05-25 1994-08-22 ローム株式会社 自己訂正機能を有する半導体記憶装置
JPH07114077B2 (ja) * 1989-06-01 1995-12-06 三菱電機株式会社 不揮発性半導体記憶装置
US5258958A (en) * 1989-06-12 1993-11-02 Kabushiki Kaisha Toshiba Semiconductor memory device
FR2650109B1 (fr) * 1989-07-20 1993-04-02 Gemplus Card Int Circuit integre mos a tension de seuil ajustable
JPH03162800A (ja) * 1989-08-29 1991-07-12 Mitsubishi Electric Corp 半導体メモリ装置
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
US5200959A (en) * 1989-10-17 1993-04-06 Sundisk Corporation Device and method for defect handling in semi-conductor memory
US5270551A (en) * 1990-02-14 1993-12-14 Hitachi, Ltd. Method of and apparatus for protecting electronic circuit against radiation
US4975883A (en) 1990-03-29 1990-12-04 Intel Corporation Method and apparatus for preventing the erasure and programming of a nonvolatile memory
US5122985A (en) * 1990-04-16 1992-06-16 Giovani Santin Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
US5132935A (en) * 1990-04-16 1992-07-21 Ashmore Jr Benjamin H Erasure of eeprom memory arrays to prevent over-erased cells
US5200922A (en) * 1990-10-24 1993-04-06 Rao Kameswara K Redundancy circuit for high speed EPROM and flash memory devices
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5239505A (en) * 1990-12-28 1993-08-24 Intel Corporation Floating gate non-volatile memory with blocks and memory refresh
US5270979A (en) * 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
US5504760A (en) * 1991-03-15 1996-04-02 Sandisk Corporation Mixed data encoding EEPROM system
US5263032A (en) * 1991-06-27 1993-11-16 Digital Equipment Corporation Computer system operation with corrected read data function
US5313427A (en) * 1991-09-20 1994-05-17 Texas Instruments Incorporated EEPROM array with narrow margin of voltage thresholds after erase
JPH05109292A (ja) * 1991-10-14 1993-04-30 Toshiba Corp 不揮発性半導体記憶装置
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5327383A (en) * 1992-04-21 1994-07-05 Intel Corporation Method and circuitry for erasing a nonvolatile semiconductor memory incorporating row redundancy
US5347489A (en) * 1992-04-21 1994-09-13 Intel Corporation Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
JPH065823A (ja) * 1992-06-19 1994-01-14 Toshiba Corp 不揮発性半導体記憶装置及びその使用方法
US5550394A (en) * 1993-06-18 1996-08-27 Texas Instruments Incorporated Semiconductor memory device and defective memory cell correction circuit
US5315541A (en) * 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
JP2708333B2 (ja) * 1992-09-02 1998-02-04 株式会社東芝 レベルシフタ回路
US5365486A (en) * 1992-12-16 1994-11-15 Texas Instruments Incorporated Method and circuitry for refreshing a flash electrically erasable, programmable read only memory
US5404485A (en) 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3999822B2 (ja) * 1993-12-28 2007-10-31 株式会社東芝 記憶システム
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
GB2289779B (en) 1994-05-24 1999-04-28 Intel Corp Method and apparatus for automatically scrubbing ECC errors in memory via hardware
US5450363A (en) * 1994-06-02 1995-09-12 Intel Corporation Gray coding for a multilevel cell memory system
US5523972A (en) * 1994-06-02 1996-06-04 Intel Corporation Method and apparatus for verifying the programming of multi-level flash EEPROM memory
JP3563452B2 (ja) * 1994-08-10 2004-09-08 株式会社東芝 セル閾値分布検知回路およびセル閾値分布検知方法
JPH08147988A (ja) 1994-11-17 1996-06-07 Sony Corp 半導体不揮発性記憶装置
FR2728380A1 (fr) * 1994-12-20 1996-06-21 Sgs Thomson Microelectronics Procede d'ecriture de donnees dans une memoire et memoire electriquement programmable correspondante
US5475693A (en) * 1994-12-27 1995-12-12 Intel Corporation Error management processes for flash EEPROM memory arrays
JP3274306B2 (ja) * 1995-01-20 2002-04-15 株式会社東芝 半導体集積回路装置
US5889698A (en) 1995-01-31 1999-03-30 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US5530705A (en) * 1995-02-08 1996-06-25 International Business Machines Corporation Soft error recovery system and method
US5513144A (en) * 1995-02-13 1996-04-30 Micron Technology, Inc. On-chip memory redundancy circuitry for programmable non-volatile memories, and methods for programming same
JP3176019B2 (ja) 1995-04-05 2001-06-11 株式会社東芝 不揮発性半導体記憶部を含む記憶システム
US5699297A (en) * 1995-05-30 1997-12-16 Kabushiki Kaisha Toshiba Method of rewriting data in a microprocessor additionally provided with a flash memory
US5907856A (en) 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US5703506A (en) * 1995-12-26 1997-12-30 Motorola Signal processing method
FR2745114B1 (fr) 1996-02-20 1998-04-17 Sgs Thomson Microelectronics Memoire non volatile multiniveau modifiable electriquement avec rafraichissement autonome
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5712815A (en) * 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5715193A (en) * 1996-05-23 1998-02-03 Micron Quantum Devices, Inc. Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
US5675537A (en) * 1996-08-22 1997-10-07 Advanced Micro Devices, Inc. Erase method for page mode multiple bits-per-cell flash EEPROM
US5798968A (en) * 1996-09-24 1998-08-25 Sandisk Corporation Plane decode/virtual sector architecture
US5890192A (en) * 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US5717632A (en) * 1996-11-27 1998-02-10 Advanced Micro Devices, Inc. Apparatus and method for multiple-level storage in non-volatile memories
US5835413A (en) * 1996-12-20 1998-11-10 Intel Corporation Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US5937425A (en) 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
JP3177207B2 (ja) * 1998-01-27 2001-06-18 インターナショナル・ビジネス・マシーンズ・コーポレ−ション リフレッシュ間隔制御装置及び方法、並びにコンピュータ
EP1060534B1 (de) * 1998-02-27 2003-01-22 Corning Incorporated Flexible anorganische elektrolytische brennstoffzellenausführung
JP2000187992A (ja) 1998-12-17 2000-07-04 Mitsubishi Electric Corp 電気的書換可能な不揮発性メモリのリフレッシュ制御回路
US6215697B1 (en) * 1999-01-14 2001-04-10 Macronix International Co., Ltd. Multi-level memory cell device and method for self-converged programming
JP2000251483A (ja) * 1999-02-24 2000-09-14 Sanyo Electric Co Ltd 1チップマイクロコンピュータとそのデータリフレッシュ方法
AU7313600A (en) * 1999-09-17 2001-04-24 Hitachi Limited Storage where the number of error corrections is recorded
US6222768B1 (en) * 2000-01-28 2001-04-24 Advanced Micro Devices, Inc. Auto adjusting window placement scheme for an NROM virtual ground array
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6772274B1 (en) 2000-09-13 2004-08-03 Lexar Media, Inc. Flash memory system and method implementing LBA to PBA correlation within flash memory array
US6345001B1 (en) * 2000-09-14 2002-02-05 Sandisk Corporation Compressed event counting technique and application to a flash memory system
JP4323707B2 (ja) * 2000-10-25 2009-09-02 富士通マイクロエレクトロニクス株式会社 フラッシュメモリの欠陥管理方法
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
JP3812933B2 (ja) * 2001-04-19 2006-08-23 シャープ株式会社 ファイルシステムおよびその制御方法
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
JP4059472B2 (ja) * 2001-08-09 2008-03-12 株式会社ルネサステクノロジ メモリカード及びメモリコントローラ
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6678785B2 (en) 2001-09-28 2004-01-13 M-Systems Flash Disk Pioneers Ltd. Flash management system using only sequential write
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6560152B1 (en) * 2001-11-02 2003-05-06 Sandisk Corporation Non-volatile memory with temperature-compensated data read
US6678192B2 (en) * 2001-11-02 2004-01-13 Sandisk Corporation Error management for writable tracking storage units
JP2003242789A (ja) * 2002-02-14 2003-08-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2003257192A (ja) 2002-03-06 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置および不揮発性半導体記憶装置
US6963505B2 (en) 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US6912160B2 (en) * 2003-03-11 2005-06-28 Fujitsu Limited Nonvolatile semiconductor memory device
US6839281B2 (en) * 2003-04-14 2005-01-04 Jian Chen Read and erase verify methods and circuits suitable for low voltage non-volatile memories
US7076598B2 (en) * 2003-09-09 2006-07-11 Solid State System Co., Ltd. Pipeline accessing method to a large block memory
EP2157505A1 (de) 2003-09-18 2010-02-24 Panasonic Corporation Halbleiter-Speicherkarte, Halbleiter-Speichersteuervorrichtung und Halbleiter-Speichersteuerverfahren
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7012835B2 (en) 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
JP4083147B2 (ja) * 2004-07-02 2008-04-30 シャープ株式会社 半導体記憶装置
US7242618B2 (en) * 2004-12-09 2007-07-10 Saifun Semiconductors Ltd. Method for reading non-volatile memory cells
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7339834B2 (en) 2005-06-03 2008-03-04 Sandisk Corporation Starting program voltage shift with cycling of non-volatile memory
US7631245B2 (en) 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7254071B2 (en) * 2006-01-12 2007-08-07 Sandisk Corporation Flash memory devices with trimmed analog voltages
US7613043B2 (en) 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7330376B1 (en) * 2006-07-27 2008-02-12 Macronix International Co., Ltd. Method for memory data storage by partition into narrower threshold voltage distribution regions
US7450425B2 (en) 2006-08-30 2008-11-11 Micron Technology, Inc. Non-volatile memory cell read failure reduction
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7489547B2 (en) * 2006-12-29 2009-02-10 Sandisk Corporation Method of NAND flash memory cell array with adaptive memory state partitioning
US7489548B2 (en) * 2006-12-29 2009-02-10 Sandisk Corporation NAND flash memory cell array with adaptive memory state partitioning
US20080294813A1 (en) 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
US20080294814A1 (en) 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
KR100838292B1 (ko) 2007-06-20 2008-06-17 삼성전자주식회사 메모리 셀의 읽기 레벨 제어 장치 및 그 방법

Also Published As

Publication number Publication date
US7012835B2 (en) 2006-03-14
JP2007507804A (ja) 2007-03-29
ATE382892T1 (de) 2008-01-15
TW200532695A (en) 2005-10-01
CN101630279A (zh) 2010-01-20
US7518919B2 (en) 2009-04-14
TWI261840B (en) 2006-09-11
EP1687720B1 (de) 2008-01-02
US20060062048A1 (en) 2006-03-23
JP4723504B2 (ja) 2011-07-13
DE602004011097D1 (de) 2008-02-14
WO2005036401A3 (en) 2005-07-28
US7224607B2 (en) 2007-05-29
EP1847930B1 (de) 2009-06-24
CN1882918A (zh) 2006-12-20
US8004895B2 (en) 2011-08-23
US20050073884A1 (en) 2005-04-07
CN101630279B (zh) 2012-08-15
US20110055468A1 (en) 2011-03-03
WO2005036401A2 (en) 2005-04-21
CN100541439C (zh) 2009-09-16
EP1687720A2 (de) 2006-08-09
US20090187785A1 (en) 2009-07-23
DE602004011097T2 (de) 2009-01-15
US8050095B2 (en) 2011-11-01
KR101127882B1 (ko) 2012-03-21
US20070211532A1 (en) 2007-09-13
KR20070001871A (ko) 2007-01-04
EP1847930A1 (de) 2007-10-24
ATE434788T1 (de) 2009-07-15

Similar Documents

Publication Publication Date Title
DE602004021735D1 (de) Flash-Speicherdatenkorrektur und -säuberungsverfahren
TW200733112A (en) Corrected data storage and handling methods
TWI570737B (zh) 資料儲存裝置以及快閃記憶體控制方法
US7663933B2 (en) Memory controller
JP4377950B2 (ja) メモリの管理方法
US8438343B2 (en) Memory system with fixed and variable pointers
TW201351148A (zh) 資料保護方法、記憶體控制器與記憶體儲存裝置
TWI633428B (zh) 資料儲存裝置與記憶體裝置之資料處理方法
US10168940B2 (en) Data storage using SLC and TLC memory banks and data maintenance method thereof
TWI433157B (zh) 存取快閃記憶體的方法以及相關之記憶裝置
US20120303944A1 (en) Data recovering system and method
US20140143632A1 (en) Method to Extend Data Retention for Flash Based Storage in a Real Time Device Processed on Generic Semiconductor Technology
CN105204958A (zh) 一种延长NAND Flash数据可靠存储时间的编码方法
CN110069362B (zh) 数据储存装置与数据处理方法
JP2010067098A (ja) 情報処理装置、情報処理方法および情報処理プログラム
TWI687930B (zh) 快閃記憶體控制器、管理快閃記憶體模組的方法及相關的電子裝置
CN111290878B (zh) 用于刷新固件的副本的方法和系统及存储介质
JP4558052B2 (ja) メモリシステム
TWI592801B (zh) 資料儲存裝置及其資料維護方法
JP6263068B2 (ja) 半導体記憶装置
CN115132261A (zh) 一种三维存储器数据刷新方法、装置、系统和介质
JP2001014865A (ja) フラッシュメモリ、フラッシュメモリ書き換え回数記憶方法およびその方法をコンピュータに実行させるプログラムを記録したコンピュータ読み取り可能な記録媒体

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 1847930

Country of ref document: EP

Representative=s name: PATENTANWAELTE MAXTON LANGMAACK & PARTNER, DE