DE602004024683D1 - - Google Patents

Info

Publication number
DE602004024683D1
DE602004024683D1 DE602004024683T DE602004024683T DE602004024683D1 DE 602004024683 D1 DE602004024683 D1 DE 602004024683D1 DE 602004024683 T DE602004024683 T DE 602004024683T DE 602004024683 T DE602004024683 T DE 602004024683T DE 602004024683 D1 DE602004024683 D1 DE 602004024683D1
Authority
DE
Germany
Prior art keywords
sram
circuitry
state elements
environment
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004024683T
Other languages
English (en)
Inventor
Uri Cummings
Andrew Lines
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fulcrum Microsystems Inc
Original Assignee
Fulcrum Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fulcrum Microsystems Inc filed Critical Fulcrum Microsystems Inc
Publication of DE602004024683D1 publication Critical patent/DE602004024683D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE602004024683T 2003-07-14 2004-07-13 Active DE602004024683D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48753603P 2003-07-14 2003-07-14
PCT/US2004/022679 WO2005008672A2 (en) 2003-07-14 2004-07-13 Asynchronous static random access memory

Publications (1)

Publication Number Publication Date
DE602004024683D1 true DE602004024683D1 (de) 2010-01-28

Family

ID=34079380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004024683T Active DE602004024683D1 (de) 2003-07-14 2004-07-13

Country Status (6)

Country Link
US (2) US7050324B2 (de)
EP (1) EP1647030B1 (de)
JP (1) JP4904154B2 (de)
AT (1) ATE452408T1 (de)
DE (1) DE602004024683D1 (de)
WO (1) WO2005008672A2 (de)

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US7359281B2 (en) 2005-02-01 2008-04-15 Intelliserv, Inc. Read and/or write detection system for an asynchronous memory array
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KR101646705B1 (ko) * 2009-12-01 2016-08-09 삼성전자주식회사 에스-박스를 구현한 암호화 장치
US8402164B1 (en) 2010-10-27 2013-03-19 Xilinx, Inc. Asynchronous communication network and methods of enabling the asynchronous communication of data in an integrated circuit
US8644088B2 (en) 2010-10-28 2014-02-04 Hynix Semiconductor Inc. Semiconductor memory device and semiconductor system including the same
US9058860B2 (en) 2012-03-29 2015-06-16 Memoir Systems, Inc. Methods and apparatus for synthesizing multi-port memory circuits
US9508405B2 (en) 2013-10-03 2016-11-29 Stmicroelectronics International N.V. Method and circuit to enable wide supply voltage difference in multi-supply memory
US9361973B2 (en) * 2013-10-28 2016-06-07 Cypress Semiconductor Corporation Multi-channel, multi-bank memory with wide data input/output
US10043194B2 (en) 2014-04-04 2018-08-07 International Business Machines Corporation Network demand forecasting
US10361924B2 (en) 2014-04-04 2019-07-23 International Business Machines Corporation Forecasting computer resources demand
US10439891B2 (en) 2014-04-08 2019-10-08 International Business Machines Corporation Hyperparameter and network topology selection in network demand forecasting
US9385934B2 (en) 2014-04-08 2016-07-05 International Business Machines Corporation Dynamic network monitoring
US10713574B2 (en) 2014-04-10 2020-07-14 International Business Machines Corporation Cognitive distributed network
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Also Published As

Publication number Publication date
EP1647030A2 (de) 2006-04-19
US7161828B2 (en) 2007-01-09
JP4904154B2 (ja) 2012-03-28
WO2005008672B1 (en) 2005-08-18
EP1647030A4 (de) 2007-03-07
US7050324B2 (en) 2006-05-23
US20050024928A1 (en) 2005-02-03
US20050276095A1 (en) 2005-12-15
WO2005008672A2 (en) 2005-01-27
EP1647030B1 (de) 2009-12-16
JP2007531957A (ja) 2007-11-08
WO2005008672A3 (en) 2005-07-14
ATE452408T1 (de) 2010-01-15

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Legal Events

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8364 No opposition during term of opposition