DE602004030161D1 - Verringerung von karottendefekten bei der siliciumcarbid-epitaxie - Google Patents

Verringerung von karottendefekten bei der siliciumcarbid-epitaxie

Info

Publication number
DE602004030161D1
DE602004030161D1 DE602004030161T DE602004030161T DE602004030161D1 DE 602004030161 D1 DE602004030161 D1 DE 602004030161D1 DE 602004030161 T DE602004030161 T DE 602004030161T DE 602004030161 T DE602004030161 T DE 602004030161T DE 602004030161 D1 DE602004030161 D1 DE 602004030161D1
Authority
DE
Germany
Prior art keywords
layer
silicon carbide
epitaxial
substrate
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004030161T
Other languages
English (en)
Inventor
Michael John O'loughlin
Joseph John Sumakeris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE602004030161D1 publication Critical patent/DE602004030161D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/02—Re-forming glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
DE602004030161T 2004-03-01 2004-11-18 Verringerung von karottendefekten bei der siliciumcarbid-epitaxie Active DE602004030161D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,406 US7230274B2 (en) 2004-03-01 2004-03-01 Reduction of carrot defects in silicon carbide epitaxy
PCT/US2004/038895 WO2005093137A1 (en) 2004-03-01 2004-11-18 Reduction of carrot defects in silicon carbide epitaxy

Publications (1)

Publication Number Publication Date
DE602004030161D1 true DE602004030161D1 (de) 2010-12-30

Family

ID=34959915

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004030161T Active DE602004030161D1 (de) 2004-03-01 2004-11-18 Verringerung von karottendefekten bei der siliciumcarbid-epitaxie

Country Status (10)

Country Link
US (2) US7230274B2 (de)
EP (1) EP1721031B1 (de)
JP (1) JP5268354B2 (de)
KR (1) KR20070008577A (de)
CN (1) CN100472002C (de)
AT (1) ATE488622T1 (de)
CA (1) CA2555431A1 (de)
DE (1) DE602004030161D1 (de)
TW (1) TW200534360A (de)
WO (1) WO2005093137A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
JP5175285B2 (ja) * 2006-07-31 2013-04-03 アプライド マテリアルズ インコーポレイテッド エピタキシャル層形成中の形態制御方法
CN101496153A (zh) * 2006-07-31 2009-07-29 应用材料股份有限公司 形成含碳外延硅层的方法
JP2008094700A (ja) * 2006-09-13 2008-04-24 Nippon Steel Corp 炭化珪素単結晶エピタキシャルウェハ及びその製造方法
JP4844330B2 (ja) * 2006-10-03 2011-12-28 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP4842094B2 (ja) * 2006-11-02 2011-12-21 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板の製造方法
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
WO2009048997A1 (en) * 2007-10-12 2009-04-16 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Producing epitaxial layers with low basal plane dislocation concentrations
US8221546B2 (en) 2008-03-26 2012-07-17 Ss Sc Ip, Llc Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby
CN102197168B (zh) * 2008-08-29 2014-03-12 新日铁住金株式会社 SiC单晶膜的制造方法及装置
US8536582B2 (en) * 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
US10256094B2 (en) 2009-08-20 2019-04-09 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
US9464366B2 (en) 2009-08-20 2016-10-11 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC
US10256090B2 (en) 2009-08-20 2019-04-09 The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
CN101877309B (zh) * 2009-10-30 2011-09-21 西安电子科技大学 提高4H-SiC基面位错转化率的外延方法
US8445386B2 (en) * 2010-05-27 2013-05-21 Cree, Inc. Smoothing method for semiconductor material and wafers produced by same
PL213291B1 (pl) * 2010-06-07 2013-02-28 Inst Tech Material Elekt Sposób wytwarzania grafenu
KR20120101055A (ko) * 2010-12-27 2012-09-12 스미토모덴키고교가부시키가이샤 탄화규소 기판, 반도체 장치, 탄화규소 기판의 제조 방법 및 반도체 장치의 제조 방법
JP5961357B2 (ja) * 2011-09-09 2016-08-02 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
GB201210519D0 (en) 2012-06-14 2012-07-25 Kromek Ltd Apparatus and method for crystal growth
US20140054609A1 (en) * 2012-08-26 2014-02-27 Cree, Inc. Large high-quality epitaxial wafers
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP6036200B2 (ja) * 2012-11-13 2016-11-30 富士電機株式会社 炭化珪素半導体装置の製造方法
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
JP2014154667A (ja) * 2013-02-07 2014-08-25 Sumitomo Electric Ind Ltd 半導体装置
JP2014175412A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体基板及び半導体装置
WO2014150400A1 (en) * 2013-03-15 2014-09-25 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Reduction of basal plane dislocations in epitaxial sic using an in-situ etch process
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN106574397B (zh) 2014-08-01 2019-10-22 住友电气工业株式会社 外延晶片及其制造方法
DE112015003959T5 (de) * 2014-08-29 2017-05-18 Sumitomo Electric Industries Ltd. Siliziumkarbid-Halbleitervorrichtung und Verfahren zur Herstellung derselben
CN106715767A (zh) * 2014-10-01 2017-05-24 住友电气工业株式会社 碳化硅外延基板
JP6387799B2 (ja) * 2014-11-14 2018-09-12 株式会社デンソー 半導体基板およびその製造方法
JP2016166112A (ja) 2015-03-10 2016-09-15 株式会社東芝 半導体基板及び半導体装置
CN104851781B (zh) * 2015-06-08 2020-04-14 国网智能电网研究院 一种n型低偏角碳化硅外延片的制备方法
CN105244255B (zh) * 2015-08-27 2019-03-05 中国电子科技集团公司第十三研究所 一种碳化硅外延材料及其生产方法
JP2017055086A (ja) * 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
CN108138360B (zh) * 2015-10-07 2020-12-08 住友电气工业株式会社 碳化硅外延基板及用于制造碳化硅半导体装置的方法
JP6621304B2 (ja) * 2015-11-10 2019-12-18 学校法人関西学院 半導体ウエハの製造方法
JP6579710B2 (ja) 2015-12-24 2019-09-25 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
JP6965499B2 (ja) * 2016-03-16 2021-11-10 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6762484B2 (ja) * 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP7352058B2 (ja) 2017-11-01 2023-09-28 セントラル硝子株式会社 炭化ケイ素単結晶の製造方法
JP7230551B2 (ja) * 2019-02-07 2023-03-01 住友電気工業株式会社 炭化珪素エピタキシャル層の厚みの測定方法
TWI723415B (zh) * 2019-06-05 2021-04-01 環球晶圓股份有限公司 碳化矽晶體及碳化矽晶種片
CN111029246B (zh) * 2019-12-09 2022-07-29 中国电子科技集团公司第五十五研究所 一种降低SiC外延层中三角形缺陷的方法
CN113745094A (zh) * 2021-08-31 2021-12-03 顾赢速科技(合肥)有限公司 多层外延工艺制作薄碳化硅晶片圆的方法
CN113654866B (zh) * 2021-09-22 2024-03-01 河北光兴半导体技术有限公司 一种含有微米级一维铂铑缺陷的薄玻璃样品的制备及缺陷测试方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501356A (en) * 1966-05-12 1970-03-17 Westinghouse Electric Corp Process for the epitaxial growth of silicon carbide
JPS61151093A (ja) * 1984-12-25 1986-07-09 Nec Corp ３−５族化合物半導体の気相エピタキシヤル成長方法
US4659400A (en) * 1985-06-27 1987-04-21 General Instrument Corp. Method for forming high yield epitaxial wafers
US4912064A (en) * 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US5248385A (en) * 1991-06-12 1993-09-28 The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers
AU2250392A (en) * 1991-06-12 1993-01-12 Case Western Reserve University Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
SE9502288D0 (sv) 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
FR2737734B1 (fr) * 1995-08-10 1997-08-29 Alcatel Optronics Procede de gravure d'un substrat par jets chimiques
US6063186A (en) * 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
JP4066528B2 (ja) 1998-07-31 2008-03-26 株式会社デンソー 炭化珪素単結晶の製造方法
JP3443379B2 (ja) * 1999-03-23 2003-09-02 松下電器産業株式会社 半導体膜の成長方法及び半導体装置の製造方法
JP4457432B2 (ja) * 1999-06-17 2010-04-28 株式会社デンソー 種結晶とそれを用いた炭化珪素単結晶の製造方法、炭化珪素単結晶体および単結晶製造装置
US6329088B1 (en) * 1999-06-24 2001-12-11 Advanced Technology Materials, Inc. Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
JP4742448B2 (ja) * 2001-06-06 2011-08-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
JP4160770B2 (ja) * 2002-04-04 2008-10-08 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶エピタキシャル基板
JP2004043211A (ja) * 2002-07-09 2004-02-12 Denso Corp ＳｉＣ単結晶の製造方法及び製造装置
FR2844095B1 (fr) * 2002-09-03 2005-01-28 Commissariat Energie Atomique Procede de fabrication d'un substrat composite du type sicoi comprenant une etape d'epitaxie
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
US7018554B2 (en) 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices

Also Published As

Publication number Publication date
JP2007525402A (ja) 2007-09-06
CA2555431A1 (en) 2005-10-06
ATE488622T1 (de) 2010-12-15
CN100472002C (zh) 2009-03-25
KR20070008577A (ko) 2007-01-17
US20080054412A1 (en) 2008-03-06
WO2005093137A1 (en) 2005-10-06
US7230274B2 (en) 2007-06-12
US9903046B2 (en) 2018-02-27
CN1926266A (zh) 2007-03-07
US20070108450A1 (en) 2007-05-17
EP1721031A1 (de) 2006-11-15
EP1721031B1 (de) 2010-11-17
TW200534360A (en) 2005-10-16
JP5268354B2 (ja) 2013-08-21

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