DE602005004949D1 - Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung - Google Patents
Lithographischer Apparat und Methode zur Herstellung einer VorrichtungInfo
- Publication number
- DE602005004949D1 DE602005004949D1 DE602005004949T DE602005004949T DE602005004949D1 DE 602005004949 D1 DE602005004949 D1 DE 602005004949D1 DE 602005004949 T DE602005004949 T DE 602005004949T DE 602005004949 T DE602005004949 T DE 602005004949T DE 602005004949 D1 DE602005004949 D1 DE 602005004949D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- lithographic apparatus
- lithographic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US811070 | 1985-12-19 | ||
US10/811,070 US7561251B2 (en) | 2004-03-29 | 2004-03-29 | Lithographic apparatus and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005004949D1 true DE602005004949D1 (de) | 2008-04-10 |
DE602005004949T2 DE602005004949T2 (de) | 2009-03-12 |
Family
ID=34887663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005004949T Expired - Fee Related DE602005004949T2 (de) | 2004-03-29 | 2005-03-15 | Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung |
Country Status (8)
Country | Link |
---|---|
US (2) | US7561251B2 (de) |
EP (1) | EP1582928B1 (de) |
JP (1) | JP4459850B2 (de) |
KR (2) | KR20060044936A (de) |
CN (1) | CN1677246B (de) |
DE (1) | DE602005004949T2 (de) |
SG (1) | SG115813A1 (de) |
TW (1) | TWI282490B (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7561251B2 (en) * | 2004-03-29 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006030727A1 (ja) * | 2004-09-14 | 2006-03-23 | Nikon Corporation | 補正方法及び露光装置 |
US7830493B2 (en) * | 2005-10-04 | 2010-11-09 | Asml Netherlands B.V. | System and method for compensating for radiation induced thermal distortions in a substrate or projection system |
US7391503B2 (en) * | 2005-10-04 | 2008-06-24 | Asml Netherlands B.V. | System and method for compensating for thermal expansion of lithography apparatus or substrate |
US20070182808A1 (en) | 2005-10-26 | 2007-08-09 | Lars Stiblert | Writing apparatuses and methods |
US8122846B2 (en) | 2005-10-26 | 2012-02-28 | Micronic Mydata AB | Platforms, apparatuses, systems and methods for processing and analyzing substrates |
WO2007098935A2 (en) * | 2006-02-28 | 2007-09-07 | Micronic Laser Systems Ab | Platforms, apparatuses, systems and methods for processing and analyzing substrates |
US20090153749A1 (en) * | 2007-12-14 | 2009-06-18 | Stephen Randall Mixon | Portable projector background color correction scheme |
CN102414622A (zh) * | 2009-04-27 | 2012-04-11 | Asml荷兰有限公司 | 光刻设备和检测器设备 |
KR101698141B1 (ko) * | 2009-12-08 | 2017-01-19 | 삼성전자 주식회사 | 마스크리스 노광장치 및 그 제어방법 |
EP2365390A3 (de) * | 2010-03-12 | 2017-10-04 | ASML Netherlands B.V. | Lithographische Vorrichtung und Verfahren |
KR101136722B1 (ko) * | 2010-06-30 | 2012-04-19 | (주)인터플렉스 | 인쇄회로기판 제조방법 |
CN105143987B (zh) | 2013-03-12 | 2017-10-20 | 麦克罗尼克迈达塔有限责任公司 | 机械制造的对准基准方法和对准系统 |
WO2014140047A2 (en) | 2013-03-12 | 2014-09-18 | Micronic Mydata AB | Method and device for writing photomasks with reduced mura errors |
US9735067B2 (en) * | 2013-11-27 | 2017-08-15 | Tokyo Electron Limited | Substrate tuning system and method using optical projection |
US9703212B2 (en) * | 2015-03-12 | 2017-07-11 | Kabushiki Kaisha Toshiba | Exposure apparatus |
JP7043493B2 (ja) * | 2016-11-15 | 2022-03-29 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射分析システム |
US10444643B2 (en) * | 2017-03-24 | 2019-10-15 | Nikon Research Corporation Of America | Lithographic thermal distortion compensation with the use of machine learning |
KR102511272B1 (ko) * | 2018-02-23 | 2023-03-16 | 삼성전자주식회사 | 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법 |
CN110361938B (zh) * | 2018-03-26 | 2021-03-02 | 上海微电子装备(集团)股份有限公司 | 一种曝光方法及半导体器件的制造方法 |
US10996572B2 (en) * | 2019-02-15 | 2021-05-04 | Applied Materials, Inc. | Model based dynamic positional correction for digital lithography tools |
CN113661449A (zh) | 2019-04-10 | 2021-11-16 | Asml荷兰有限公司 | 确定套刻的方法和系统 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6078454A (ja) | 1983-10-05 | 1985-05-04 | Nippon Kogaku Kk <Nikon> | 投影露光装置 |
US4669842A (en) * | 1983-12-08 | 1987-06-02 | Canon Kabushiki Kaisha | Projection optical device |
JPS6119129A (ja) | 1984-07-05 | 1986-01-28 | Nippon Kogaku Kk <Nikon> | 投影光学装置 |
US5523193A (en) | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
JPH0276212A (ja) * | 1988-09-13 | 1990-03-15 | Canon Inc | 多重露光方法 |
DE59105735D1 (de) | 1990-05-02 | 1995-07-20 | Fraunhofer Ges Forschung | Belichtungsvorrichtung. |
US5117255A (en) * | 1990-09-19 | 1992-05-26 | Nikon Corporation | Projection exposure apparatus |
JP3047461B2 (ja) | 1990-11-26 | 2000-05-29 | 株式会社ニコン | 投影露光装置、投影露光方法、及び半導体集積回路製造方法 |
JPH05144701A (ja) | 1991-11-22 | 1993-06-11 | Canon Inc | 投影露光装置及びそれを用いた半導体素子の製造方法 |
US5229872A (en) | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
US6219015B1 (en) | 1992-04-28 | 2001-04-17 | The Board Of Directors Of The Leland Stanford, Junior University | Method and apparatus for using an array of grating light valves to produce multicolor optical images |
JPH05315222A (ja) | 1992-05-13 | 1993-11-26 | Nikon Corp | 位置合わせ方法 |
JP3224041B2 (ja) | 1992-07-29 | 2001-10-29 | 株式会社ニコン | 露光方法及び装置 |
JPH06181168A (ja) | 1992-12-14 | 1994-06-28 | Nikon Corp | 位置合わせ方法 |
US5581324A (en) | 1993-06-10 | 1996-12-03 | Nikon Corporation | Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors |
US5729331A (en) | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
JP3339149B2 (ja) | 1993-12-08 | 2002-10-28 | 株式会社ニコン | 走査型露光装置ならびに露光方法 |
US5677703A (en) | 1995-01-06 | 1997-10-14 | Texas Instruments Incorporated | Data loading circuit for digital micro-mirror device |
US5530482A (en) | 1995-03-21 | 1996-06-25 | Texas Instruments Incorporated | Pixel data processing for spatial light modulator having staggered pixels |
WO1997014077A1 (en) | 1995-10-12 | 1997-04-17 | Megapanel Corporation | Magnification control and thermal substrate chuck for photolithography |
JPH09162106A (ja) | 1995-12-11 | 1997-06-20 | Nikon Corp | 走査型露光装置 |
JP3689949B2 (ja) * | 1995-12-19 | 2005-08-31 | 株式会社ニコン | 投影露光装置、及び該投影露光装置を用いたパターン形成方法 |
AU1975197A (en) | 1996-02-28 | 1997-10-01 | Kenneth C. Johnson | Microlens scanner for microlithography and wide-field confocal microscopy |
JPH10208994A (ja) | 1997-01-16 | 1998-08-07 | Nec Corp | 露光方法及び露光装置 |
JP4126096B2 (ja) | 1997-01-29 | 2008-07-30 | マイクロニック レーザー システムズ アクチボラゲット | 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置 |
US6177980B1 (en) | 1997-02-20 | 2001-01-23 | Kenneth C. Johnson | High-throughput, maskless lithography system |
SE509062C2 (sv) | 1997-02-28 | 1998-11-30 | Micronic Laser Systems Ab | Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster |
JPH10261565A (ja) * | 1997-03-18 | 1998-09-29 | Nikon Corp | 荷電粒子線露光装置 |
US5982553A (en) | 1997-03-20 | 1999-11-09 | Silicon Light Machines | Display device incorporating one-dimensional grating light-valve array |
US6061119A (en) * | 1997-04-14 | 2000-05-09 | Nikon Corporation | Method of measuring image-forming error of projection optical system, method of manufacturing exposure apparatus, and method of manufacturing semiconductor device |
JP3352354B2 (ja) * | 1997-04-28 | 2002-12-03 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP3634563B2 (ja) * | 1997-05-09 | 2005-03-30 | キヤノン株式会社 | 露光方法および装置並びにデバイス製造方法 |
JPH10326732A (ja) | 1997-05-26 | 1998-12-08 | Nikon Corp | 焦点位置検出装置、露光装置及び露光方法 |
US5834785A (en) | 1997-06-06 | 1998-11-10 | Nikon Corporation | Method and apparatus to compensate for thermal expansion in a lithographic process |
JPH10328732A (ja) | 1997-06-06 | 1998-12-15 | Mitsubishi Shindoh Co Ltd | 金属管の平滑化方法および平滑化装置 |
SE9800665D0 (sv) | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
US6424879B1 (en) | 1999-04-13 | 2002-07-23 | Applied Materials, Inc. | System and method to correct for distortion caused by bulk heating in a substrate |
US6235439B1 (en) * | 1999-05-19 | 2001-05-22 | International Business Machines Corporation | Method for controlling image size of integrated circuits on wafers supported on hot plates during post exposure baking of the wafers |
US6883158B1 (en) | 1999-05-20 | 2005-04-19 | Micronic Laser Systems Ab | Method for error reduction in lithography |
WO2001011431A2 (en) * | 1999-08-06 | 2001-02-15 | Applied Materials, Inc. | Method and apparatus of holding semiconductor wafers for lithography and other wafer processes |
US6811953B2 (en) | 2000-05-22 | 2004-11-02 | Nikon Corporation | Exposure apparatus, method for manufacturing therof, method for exposing and method for manufacturing microdevice |
US6699630B2 (en) * | 2000-07-07 | 2004-03-02 | Nikon Corporation | Method and apparatus for exposure, and device manufacturing method |
JP3563384B2 (ja) | 2001-11-08 | 2004-09-08 | 大日本スクリーン製造株式会社 | 画像記録装置 |
KR100545297B1 (ko) | 2002-06-12 | 2006-01-24 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스 제조방법 |
US6825681B2 (en) * | 2002-07-19 | 2004-11-30 | Delta Design, Inc. | Thermal control of a DUT using a thermal control substrate |
US6654660B1 (en) | 2002-11-04 | 2003-11-25 | Advanced Micro Devices, Inc. | Controlling thermal expansion of mask substrates by scatterometry |
US6870554B2 (en) | 2003-01-07 | 2005-03-22 | Anvik Corporation | Maskless lithography with multiplexed spatial light modulators |
EP1482375B1 (de) | 2003-05-30 | 2014-09-17 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1482373A1 (de) | 2003-05-30 | 2004-12-01 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1513021B1 (de) | 2003-09-04 | 2007-10-03 | ASML Netherlands B.V. | Lithographischer Apparat und Methode zur Kompensation von thermischer Deformation in einem lithographischen Apparat |
EP1513017A1 (de) | 2003-09-04 | 2005-03-09 | ASML Netherlands B.V. | Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung |
US7250237B2 (en) | 2003-12-23 | 2007-07-31 | Asml Netherlands B.V. | Optimized correction of wafer thermal deformations in a lithographic process |
US7561251B2 (en) * | 2004-03-29 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8139218B2 (en) | 2005-07-06 | 2012-03-20 | Asml Netherlands B.V. | Substrate distortion measurement |
US8194242B2 (en) | 2005-07-29 | 2012-06-05 | Asml Netherlands B.V. | Substrate distortion measurement |
US7391503B2 (en) | 2005-10-04 | 2008-06-24 | Asml Netherlands B.V. | System and method for compensating for thermal expansion of lithography apparatus or substrate |
US7830493B2 (en) | 2005-10-04 | 2010-11-09 | Asml Netherlands B.V. | System and method for compensating for radiation induced thermal distortions in a substrate or projection system |
-
2004
- 2004-03-29 US US10/811,070 patent/US7561251B2/en active Active
-
2005
- 2005-03-15 EP EP05251565A patent/EP1582928B1/de active Active
- 2005-03-15 DE DE602005004949T patent/DE602005004949T2/de not_active Expired - Fee Related
- 2005-03-23 TW TW094108995A patent/TWI282490B/zh active
- 2005-03-28 SG SG200501887A patent/SG115813A1/en unknown
- 2005-03-28 JP JP2005092136A patent/JP4459850B2/ja active Active
- 2005-03-28 CN CN2005100716949A patent/CN1677246B/zh active Active
- 2005-03-29 KR KR1020050026026A patent/KR20060044936A/ko not_active Application Discontinuation
-
2007
- 2007-05-18 KR KR1020070048873A patent/KR20070058418A/ko not_active Application Discontinuation
-
2009
- 2009-05-21 US US12/469,953 patent/US8502954B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1677246B (zh) | 2011-09-28 |
JP4459850B2 (ja) | 2010-04-28 |
US8502954B2 (en) | 2013-08-06 |
TWI282490B (en) | 2007-06-11 |
EP1582928B1 (de) | 2008-02-27 |
US7561251B2 (en) | 2009-07-14 |
JP2005286333A (ja) | 2005-10-13 |
KR20070058418A (ko) | 2007-06-08 |
KR20060044936A (ko) | 2006-05-16 |
US20050213067A1 (en) | 2005-09-29 |
TW200602813A (en) | 2006-01-16 |
CN1677246A (zh) | 2005-10-05 |
DE602005004949T2 (de) | 2009-03-12 |
US20100014059A1 (en) | 2010-01-21 |
EP1582928A1 (de) | 2005-10-05 |
SG115813A1 (en) | 2005-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |