DE602005007960D1 - Nichtflüchtiger Halbleiterspeicher, Methode zum gleichzeitigen Löschen mehrerer Speicherblöcke und zugehörige Decoderschaltung - Google Patents

Nichtflüchtiger Halbleiterspeicher, Methode zum gleichzeitigen Löschen mehrerer Speicherblöcke und zugehörige Decoderschaltung

Info

Publication number
DE602005007960D1
DE602005007960D1 DE602005007960T DE602005007960T DE602005007960D1 DE 602005007960 D1 DE602005007960 D1 DE 602005007960D1 DE 602005007960 T DE602005007960 T DE 602005007960T DE 602005007960 T DE602005007960 T DE 602005007960T DE 602005007960 D1 DE602005007960 D1 DE 602005007960D1
Authority
DE
Germany
Prior art keywords
decoder circuit
volatile semiconductor
semiconductor memory
associated decoder
simultaneously erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005007960T
Other languages
English (en)
Inventor
Seok-Heon Lee
Jin-Yub Lee
Dae-Sik Park
Tae-Gyun Kim
Young-Joon Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040032271A external-priority patent/KR100632941B1/ko
Priority claimed from KR1020040073030A external-priority patent/KR100634433B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005007960D1 publication Critical patent/DE602005007960D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/20—Suspension of programming or erasing cells in an array in order to read other cells in it
DE602005007960T 2004-05-07 2005-03-24 Nichtflüchtiger Halbleiterspeicher, Methode zum gleichzeitigen Löschen mehrerer Speicherblöcke und zugehörige Decoderschaltung Active DE602005007960D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040032271A KR100632941B1 (ko) 2004-05-07 2004-05-07 불 휘발성 반도체 메모리 장치 및 그것의 멀티-블록 소거방법
KR1020040073030A KR100634433B1 (ko) 2004-09-13 2004-09-13 불 휘발성 반도체 메모리 장치 및 그것의 멀티-블록 소거방법

Publications (1)

Publication Number Publication Date
DE602005007960D1 true DE602005007960D1 (de) 2008-08-21

Family

ID=34934515

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602005007960T Active DE602005007960D1 (de) 2004-05-07 2005-03-24 Nichtflüchtiger Halbleiterspeicher, Methode zum gleichzeitigen Löschen mehrerer Speicherblöcke und zugehörige Decoderschaltung
DE602005020066T Active DE602005020066D1 (de) 2004-05-07 2005-03-24 Decodierschaltung zur Verwendung in einer nichtflüchtigen Halbleiterspeichervorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE602005020066T Active DE602005020066D1 (de) 2004-05-07 2005-03-24 Decodierschaltung zur Verwendung in einer nichtflüchtigen Halbleiterspeichervorrichtung

Country Status (5)

Country Link
US (1) US7110301B2 (de)
EP (2) EP1860662B1 (de)
CN (2) CN1694184A (de)
DE (2) DE602005007960D1 (de)
TW (1) TWI285897B (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100559715B1 (ko) * 2004-02-25 2006-03-10 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 소거 방법
KR100648289B1 (ko) * 2005-07-25 2006-11-23 삼성전자주식회사 프로그램 속도를 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
KR101178122B1 (ko) * 2006-02-22 2012-08-29 삼성전자주식회사 플래시 메모리 장치, 플래시 메모리 장치를 소거하는 방법,그리고 그 장치를 포함한 메모리 시스템
US7760552B2 (en) * 2006-03-31 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
KR100830575B1 (ko) * 2006-09-26 2008-05-21 삼성전자주식회사 플래시 메모리 장치 및 그것의 멀티-블록 소거 방법
KR100819106B1 (ko) * 2006-09-27 2008-04-02 삼성전자주식회사 상변화 메모리 장치에서의 라이트 동작방법
KR100769772B1 (ko) 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 이를 이용한 소거 방법
KR100769771B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 그 소거 방법
JP2008117505A (ja) * 2006-11-03 2008-05-22 Spansion Llc 半導体装置およびその制御方法
US7511996B2 (en) * 2006-11-30 2009-03-31 Mosaid Technologies Incorporated Flash memory program inhibit scheme
CN101241473B (zh) * 2007-02-09 2010-09-08 中兴通讯股份有限公司 固件擦除方法和装置
KR101519061B1 (ko) * 2008-01-21 2015-05-11 삼성전자주식회사 하나의 고전압 레벨 쉬프터를 공유하는 로우 디코더를 갖는플래쉬 메모리 장치
JP2009238323A (ja) * 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd 半導体記憶装置、画像処理システムおよび画像処理方法
US7859899B1 (en) 2008-03-28 2010-12-28 Cypress Semiconductor Corporation Non-volatile memory and method of operating the same
US8274829B2 (en) * 2008-06-09 2012-09-25 Aplus Flash Technology, Inc. Row-decoder and source-decoder structures suitable for erase in unit of page, sector and chip of a NOR-type flash operating below +/− 10V BVDS
US8295087B2 (en) * 2008-06-16 2012-10-23 Aplus Flash Technology, Inc. Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/− 10v BVDS
US8289775B2 (en) * 2008-06-20 2012-10-16 Aplus Flash Technology, Inc. Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
CN102930899B (zh) * 2009-02-11 2015-11-25 北京兆易创新科技股份有限公司 一种非易失存储器的擦除方法及装置
DE112009004621B4 (de) * 2009-05-04 2018-08-23 Hewlett-Packard Development Company, L.P. Speichervorrichtungs-LöschbefehI mit einem Steuerfeld, das durch eine Anforderer-Vorrichtung steuerbar ist
JP2011100518A (ja) * 2009-11-06 2011-05-19 Toshiba Corp 半導体装置及びその制御方法
US9378831B2 (en) 2010-02-09 2016-06-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
US9324440B2 (en) 2010-02-09 2016-04-26 Samsung Electronics Co., Ltd. Nonvolatile memory devices, operating methods thereof and memory systems including the same
KR101691092B1 (ko) * 2010-08-26 2016-12-30 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
KR101691088B1 (ko) 2010-02-17 2016-12-29 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
KR101658479B1 (ko) 2010-02-09 2016-09-21 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
CN102237136B (zh) * 2010-04-26 2014-05-14 旺宏电子股份有限公司 使用在一存储装置的存储子单元抹除方法
KR101132018B1 (ko) * 2010-07-09 2012-04-02 주식회사 하이닉스반도체 전압 스위치 회로 및 이를 이용한 불휘발성 메모리 장치
WO2012021379A2 (en) * 2010-08-10 2012-02-16 Rambus Inc. Verify before program resume for memory devices
KR101710089B1 (ko) * 2010-08-26 2017-02-24 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
JP5684161B2 (ja) * 2012-01-26 2015-03-11 株式会社東芝 半導体装置
KR102083490B1 (ko) * 2012-08-08 2020-03-03 삼성전자 주식회사 비휘발성 메모리 장치, 이를 포함하는 메모리 시스템 및 비휘발성 메모리 장치의 커맨드 실행 제어 방법
US10908835B1 (en) 2013-01-10 2021-02-02 Pure Storage, Inc. Reversing deletion of a virtual machine
US11733908B2 (en) * 2013-01-10 2023-08-22 Pure Storage, Inc. Delaying deletion of a dataset
US10445229B1 (en) 2013-01-28 2019-10-15 Radian Memory Systems, Inc. Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies
US9779038B2 (en) 2013-01-31 2017-10-03 Apple Inc. Efficient suspend-resume operation in memory devices
KR102147988B1 (ko) 2013-04-09 2020-08-26 삼성전자주식회사 불휘발성 저장 장치 및 그것의 데이터 저장 방법
CN105518799B (zh) * 2013-09-04 2018-11-02 东芝存储器株式会社 半导体存储装置
KR102242022B1 (ko) 2013-09-16 2021-04-21 삼성전자주식회사 불휘발성 메모리 및 그것의 프로그램 방법
KR102187637B1 (ko) * 2014-02-03 2020-12-07 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법
JP2015176628A (ja) * 2014-03-17 2015-10-05 株式会社東芝 半導体記憶装置及びメモリコントローラ
US9633233B2 (en) 2014-05-07 2017-04-25 Sandisk Technologies Llc Method and computing device for encrypting data stored in swap memory
US9710198B2 (en) 2014-05-07 2017-07-18 Sandisk Technologies Llc Method and computing device for controlling bandwidth of swap operations
US9928169B2 (en) 2014-05-07 2018-03-27 Sandisk Technologies Llc Method and system for improving swap performance
US9665296B2 (en) 2014-05-07 2017-05-30 Sandisk Technologies Llc Method and computing device for using both volatile memory and non-volatile swap memory to pre-load a plurality of applications
US10242743B2 (en) 2014-09-06 2019-03-26 NEO Semiconductor, Inc. Method and apparatus for writing nonvolatile memory using multiple-page programming
US9761310B2 (en) 2014-09-06 2017-09-12 NEO Semiconductor, Inc. Method and apparatus for storing information using a memory able to perform both NVM and DRAM functions
US10720215B2 (en) 2014-09-06 2020-07-21 Fu-Chang Hsu Methods and apparatus for writing nonvolatile 3D NAND flash memory using multiple-page programming
CN105117266A (zh) * 2015-09-22 2015-12-02 Tcl移动通信科技（宁波）有限公司 一种移动终端的刷机方法及系统
KR102384959B1 (ko) * 2015-10-30 2022-04-11 에스케이하이닉스 주식회사 저장 장치, 이를 포함하는 메모리 시스템 및 이의 동작 방법
WO2017077624A1 (ja) 2015-11-05 2017-05-11 株式会社日立製作所 不揮発メモリデバイス、及び、不揮発メモリデバイスを有するストレージ装置
US10203884B2 (en) * 2016-03-30 2019-02-12 Intel Corporation Methods and apparatus to perform erase-suspend operations in memory devices
KR20180039351A (ko) * 2016-10-10 2018-04-18 에스케이하이닉스 주식회사 메모리 장치 및 메모리 장치의 동작 방법
KR20180050862A (ko) * 2016-11-07 2018-05-16 에스케이하이닉스 주식회사 메모리 시스템 및 그의 동작 방법
CN108109224B (zh) * 2016-11-24 2021-03-26 陕西航空电气有限责任公司 一种适用于航空电源系统控制器的数据记录模块
KR20180060084A (ko) * 2016-11-28 2018-06-07 삼성전자주식회사 반도체 메모리 장치의 스크러빙 컨트롤러, 반도체 메모리 장치 및 반도체 메모리 장치의 동작 방법
CN108206039B (zh) * 2016-12-19 2020-09-11 旺宏电子股份有限公司 存储器装置与其相关的控制方法
KR20180106127A (ko) * 2017-03-17 2018-10-01 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 위한 플래그 생성회로와 데이터 출력 방법
JP6444475B1 (ja) 2017-11-28 2018-12-26 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR20190087072A (ko) * 2018-01-16 2019-07-24 에스케이하이닉스 주식회사 데이터 저장 장치, 그것의 동작 방법 및 비휘발성 메모리 장치
US11157356B2 (en) 2018-03-05 2021-10-26 Samsung Electronics Co., Ltd. System and method for supporting data protection across FPGA SSDs
CN108962319B (zh) * 2018-06-20 2021-03-26 芯天下技术股份有限公司 一种译码器控制电路及Nor Flash存储器的版图布局方法
CN110634524A (zh) * 2018-06-25 2019-12-31 北京兆易创新科技股份有限公司 一种非易失存储器擦除方法及装置
CN111863096B (zh) * 2019-04-29 2022-08-30 北京兆易创新科技股份有限公司 一种NOR flash存储器读数据的方法和装置
TWI701669B (zh) * 2019-09-19 2020-08-11 旺宏電子股份有限公司 及式快閃記憶體
KR20220048375A (ko) * 2020-10-12 2022-04-19 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
EP0617363B1 (de) * 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JP3408552B2 (ja) * 1991-02-11 2003-05-19 インテル・コーポレーション 不揮発性半導体メモリをプログラム及び消去する回路とその方法
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
EP0559213B1 (de) * 1992-03-05 1999-09-15 Kabushiki Kaisha Toshiba Nichtflüchtige Halbleiterspeicheranordnung
KR970005644B1 (ko) * 1994-09-03 1997-04-18 삼성전자 주식회사 불휘발성 반도체 메모리장치의 멀티블럭 소거 및 검증장치 및 그 방법
JPH08306196A (ja) 1995-04-28 1996-11-22 Toshiba Corp 不揮発性半導体記憶装置
JPH11224492A (ja) * 1997-11-06 1999-08-17 Toshiba Corp 半導体記憶装置、不揮発性半導体記憶装置及びフラッシュメモリ
US6084803A (en) * 1998-10-23 2000-07-04 Mosel Vitelic, Inc. Initialization of non-volatile programmable latches in circuits in which an initialization operation is performed
KR20000030974A (ko) 1998-10-29 2000-06-05 김영환 시리얼 플래쉬 메모리의 소거검증장치 및 방법
JP4172078B2 (ja) 1998-12-28 2008-10-29 富士通株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置における消去方法
KR100631770B1 (ko) * 1999-09-07 2006-10-09 삼성전자주식회사 플래시 메모리의 실시간 처리방법
JP4413406B2 (ja) * 2000-10-03 2010-02-10 株式会社東芝 不揮発性半導体メモリ及びそのテスト方法
US6778443B2 (en) * 2001-12-25 2004-08-17 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device having memory blocks pre-programmed before erased
US7003621B2 (en) * 2003-03-25 2006-02-21 M-System Flash Disk Pioneers Ltd. Methods of sanitizing a flash-based data storage device

Also Published As

Publication number Publication date
CN103247341A (zh) 2013-08-14
EP1594139B1 (de) 2008-07-09
TW200537502A (en) 2005-11-16
US7110301B2 (en) 2006-09-19
CN103247341B (zh) 2016-04-27
EP1860662A1 (de) 2007-11-28
TWI285897B (en) 2007-08-21
EP1860662B1 (de) 2010-03-17
CN1694184A (zh) 2005-11-09
US20050248993A1 (en) 2005-11-10
EP1594139A1 (de) 2005-11-09
DE602005020066D1 (de) 2010-04-29

Similar Documents

Publication Publication Date Title
DE602005007960D1 (de) Nichtflüchtiger Halbleiterspeicher, Methode zum gleichzeitigen Löschen mehrerer Speicherblöcke und zugehörige Decoderschaltung
DE602005012028D1 (de) Nichtflüchtige Halbleiterspeicheranordnung und Leseverfahren
DE602006001026D1 (de) Integriertes Schaltgerät, Flash-Speicherarray, nichtflüchtige Speichervorrichtung und Betriebsverfahren
IL183977A0 (en) Non-volatile memory and method with improved indexing for scratch pad and update blocks
DE602004007173D1 (de) Nichtflüchtiger Halbleiterspeicher
DE602006011684D1 (de) Nichtflüchtiger Halbleiterspeicher mit drei Zuständen und dessen Betriebsverfahren
DE602006018807D1 (de) Nichtflüchtige Speicherzellen, Speicherarrays damit und Verfahren zum Betrieb der Zellen und Arrays
DE602004008833D1 (de) Nichtflüchtige Halbleiterspeichervorrichtung und deren Steuerungsverfahren
TWI346954B (en) Nonvolatile semiconductor memory device
DE602006010481D1 (de) Speichersteuerung und Steuerverfahren dafür
TWI316207B (en) Memory system and method of writing into nonvolatile semiconductor memory
EP1883931A4 (de) Prädiktive verfahren und vorrichtungen für nichtflüchtigen speicher
EP2077580A4 (de) Nicht flüchtiges speicherelement, nicht flüchtige speichervorrichtung, nicht flüchtige halbleitervorrichtung und verfahren zur herstellung eines nicht flüchtigen speicherelements
EP2040292A4 (de) Nichtflüchtiger halbleiterspeicher und verfahren zu seiner ansteuerung
DE602004025783D1 (de) Flash-Speicher und sein Programmierungsverfahren
DE602006011803D1 (de) Zeilenlayoutstruktur, Halbleiterspeichervorrichtung und Layoutverfahren
EP1748488A4 (de) Halbleiterspeicher
DE602004012674D1 (de) Zusammensetzung zum Polieren von Halbleiterschichten
DE602005009411D1 (de) Halbleiterspeichervorrichtung
DE602004020504D1 (de) Speichersteuerung
EP1714294A4 (de) Nichtflüchtiger speicher
DE602005006197D1 (de) Halbleiterspeicherbaustein
DE602007000219D1 (de) Nichtflüchtige Speichervorrichtung und Betriebsverfahren dafür
DE602007002416D1 (de) Halbleiterspeicher und Datenzugangsverfahren
DE602005018561D1 (de) Halbleiterspeicherbauelement und dessen Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition