DE602005008713D1 - Effiziente verifikation für die grob/fein-programmierung von nichtflüchtigem speicher - Google Patents

Effiziente verifikation für die grob/fein-programmierung von nichtflüchtigem speicher

Info

Publication number
DE602005008713D1
DE602005008713D1 DE602005008713T DE602005008713T DE602005008713D1 DE 602005008713 D1 DE602005008713 D1 DE 602005008713D1 DE 602005008713 T DE602005008713 T DE 602005008713T DE 602005008713 T DE602005008713 T DE 602005008713T DE 602005008713 D1 DE602005008713 D1 DE 602005008713D1
Authority
DE
Germany
Prior art keywords
volatile memory
fine programming
programming process
grob
efficient verification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005008713T
Other languages
English (en)
Inventor
Daniel C Guterman
Nima Mokhlesi
Yupin Fong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602005008713D1 publication Critical patent/DE602005008713D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5624—Concurrent multilevel programming and programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
DE602005008713T 2004-01-27 2005-01-14 Effiziente verifikation für die grob/fein-programmierung von nichtflüchtigem speicher Active DE602005008713D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/766,217 US7139198B2 (en) 2004-01-27 2004-01-27 Efficient verification for coarse/fine programming of non-volatile memory
PCT/US2005/001232 WO2005073975A2 (en) 2004-01-27 2005-01-14 Efficient verification for coarse/fine programming of non-volatile memory

Publications (1)

Publication Number Publication Date
DE602005008713D1 true DE602005008713D1 (de) 2008-09-18

Family

ID=34795618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005008713T Active DE602005008713D1 (de) 2004-01-27 2005-01-14 Effiziente verifikation für die grob/fein-programmierung von nichtflüchtigem speicher

Country Status (9)

Country Link
US (3) US7139198B2 (de)
EP (1) EP1714290B1 (de)
JP (1) JP4510031B2 (de)
KR (1) KR100858745B1 (de)
CN (1) CN1930632B (de)
AT (1) ATE403933T1 (de)
DE (1) DE602005008713D1 (de)
TW (1) TWI322432B (de)
WO (1) WO2005073975A2 (de)

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ATE403933T1 (de) 2008-08-15
US20050162916A1 (en) 2005-07-28
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US7317638B2 (en) 2008-01-08
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WO2005073975A3 (en) 2005-10-06
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