DE602005011333D1 - Substrat-elektroneninjektionstechniken zur programmierung von nichtflüchtigen ladungsspeicher-speicherzellen - Google Patents

Substrat-elektroneninjektionstechniken zur programmierung von nichtflüchtigen ladungsspeicher-speicherzellen

Info

Publication number
DE602005011333D1
DE602005011333D1 DE602005011333T DE602005011333T DE602005011333D1 DE 602005011333 D1 DE602005011333 D1 DE 602005011333D1 DE 602005011333 T DE602005011333 T DE 602005011333T DE 602005011333 T DE602005011333 T DE 602005011333T DE 602005011333 D1 DE602005011333 D1 DE 602005011333D1
Authority
DE
Germany
Prior art keywords
memory cells
volatile storage
electron injection
storage memory
injection techniques
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602005011333T
Other languages
English (en)
Inventor
George Samachisa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE602005011333D1 publication Critical patent/DE602005011333D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
DE602005011333T 2004-12-23 2005-08-05 Substrat-elektroneninjektionstechniken zur programmierung von nichtflüchtigen ladungsspeicher-speicherzellen Expired - Fee Related DE602005011333D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,193 US6980471B1 (en) 2004-12-23 2004-12-23 Substrate electron injection techniques for programming non-volatile charge storage memory cells
PCT/US2005/027963 WO2006071282A1 (en) 2004-12-23 2005-08-05 Substrate electron injection techniques for programming non-volatile charge storage memory cells

Publications (1)

Publication Number Publication Date
DE602005011333D1 true DE602005011333D1 (de) 2009-01-08

Family

ID=35482645

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005011333T Expired - Fee Related DE602005011333D1 (de) 2004-12-23 2005-08-05 Substrat-elektroneninjektionstechniken zur programmierung von nichtflüchtigen ladungsspeicher-speicherzellen

Country Status (9)

Country Link
US (3) US6980471B1 (de)
EP (1) EP1829044B1 (de)
JP (1) JP4195906B2 (de)
KR (1) KR101018667B1 (de)
CN (1) CN100547687C (de)
AT (1) ATE415687T1 (de)
DE (1) DE602005011333D1 (de)
TW (1) TWI391935B (de)
WO (1) WO2006071282A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
KR100680462B1 (ko) * 2005-04-11 2007-02-08 주식회사 하이닉스반도체 비휘발성 메모리 장치 및 그것의 핫 일렉트론 프로그램디스터브 방지방법
US7372098B2 (en) 2005-06-16 2008-05-13 Micron Technology, Inc. Low power flash memory devices
JP2007035214A (ja) * 2005-07-29 2007-02-08 Renesas Technology Corp 不揮発性半導体記憶装置
US8291295B2 (en) 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7631245B2 (en) * 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7362610B1 (en) * 2005-12-27 2008-04-22 Actel Corporation Programming method for non-volatile memory and non-volatile memory-based programmable logic device
US7436708B2 (en) * 2006-03-01 2008-10-14 Micron Technology, Inc. NAND memory device column charging
US20080046630A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US20080046641A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US8208300B2 (en) * 2008-01-08 2012-06-26 Spansion Israel Ltd Non-volatile memory cell with injector
KR20090120205A (ko) * 2008-05-19 2009-11-24 삼성전자주식회사 플래시 메모리 장치 및 그것의 동작 방법
WO2009154799A1 (en) * 2008-06-20 2009-12-23 Aplus Flash Technology, Inc. An apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
JP5462461B2 (ja) * 2008-09-30 2014-04-02 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
US8316201B2 (en) * 2008-12-18 2012-11-20 Sandisk Il Ltd. Methods for executing a command to write data from a source location to a destination location in a memory device
CN101465161A (zh) * 2008-12-30 2009-06-24 上海宏力半导体制造有限公司 共享字线的分栅式闪存
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
JP2011023705A (ja) * 2009-06-18 2011-02-03 Toshiba Corp 不揮発性半導体記憶装置
US8325529B2 (en) * 2009-08-03 2012-12-04 Sandisk Technologies Inc. Bit-line connections for non-volatile storage
JP5025703B2 (ja) * 2009-09-25 2012-09-12 株式会社東芝 不揮発性半導体記憶装置
US8595411B2 (en) 2009-12-30 2013-11-26 Sandisk Technologies Inc. Method and controller for performing a sequence of commands
US8443263B2 (en) 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
US8531886B2 (en) 2010-06-10 2013-09-10 Macronix International Co., Ltd. Hot carrier programming in NAND flash
US8947939B2 (en) 2010-09-30 2015-02-03 Macronix International Co., Ltd. Low voltage programming in NAND flash
CN102298971B (zh) * 2011-08-29 2014-05-21 南京大学 一种非挥发性快闪存储器高密度多值存储的操作方法
US8842479B2 (en) 2011-10-11 2014-09-23 Macronix International Co., Ltd. Low voltage programming in NAND flash with two stage source side bias
US8942034B2 (en) * 2013-02-05 2015-01-27 Qualcomm Incorporated System and method of programming a memory cell
KR20150049908A (ko) * 2013-10-31 2015-05-08 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 소거 방법
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
TWI576846B (zh) * 2014-12-17 2017-04-01 慧榮科技股份有限公司 快閃記憶體的資料寫入方法與其控制裝置
US9972391B2 (en) * 2014-12-17 2018-05-15 Micron Technology, Inc. Apparatus, systems, and methods to operate a memory
US9449707B2 (en) 2014-12-19 2016-09-20 Freescale Semiconductor, Inc. Systems and methods to mitigate program gate disturb in split-gate flash cell arrays
CN105428363B (zh) * 2015-11-09 2017-10-27 中国人民解放军国防科学技术大学 一种电可擦除编程非挥发性存储器及操作方法
SG10201701689UA (en) * 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
JP2018022543A (ja) * 2016-08-05 2018-02-08 ルネサスエレクトロニクス株式会社 半導体装置
US10896979B2 (en) * 2017-09-28 2021-01-19 International Business Machines Corporation Compact vertical injection punch through floating gate analog memory and a manufacture thereof
CN112201286B (zh) * 2020-09-11 2021-06-18 中天弘宇集成电路有限责任公司 快闪存储器的编程方法
CN112201295B (zh) * 2020-09-11 2021-09-17 中天弘宇集成电路有限责任公司 Nand闪存编程方法

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2645585B2 (ja) 1989-03-10 1997-08-25 工業技術院長 半導体不揮発性メモリ及びその書き込み方法
JPS4844581B1 (de) * 1969-03-15 1973-12-25
JPS5321984B2 (de) * 1973-07-13 1978-07-06
US4163985A (en) 1977-09-30 1979-08-07 The United States Of America As Represented By The Secretary Of The Air Force Nonvolatile punch through memory cell with buried n+ region in channel
JPS5864068A (ja) 1981-10-14 1983-04-16 Agency Of Ind Science & Technol 不揮発性半導体メモリの書き込み方法
JPS59111370A (ja) 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS59161873A (ja) 1983-03-07 1984-09-12 Agency Of Ind Science & Technol 半導体不揮発性メモリ
JPS6317241A (ja) 1986-07-08 1988-01-25 Sumitomo Electric Ind Ltd 光フアイバの製造方法及び装置
JPS63172471A (ja) 1987-01-12 1988-07-16 Agency Of Ind Science & Technol 不揮発性メモリへの書き込み方法
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
JP2529885B2 (ja) 1989-03-10 1996-09-04 工業技術院長 半導体メモリ及びその動作方法
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5216269A (en) 1989-03-31 1993-06-01 U.S. Philips Corp. Electrically-programmable semiconductor memories with buried injector region
DE69019872T2 (de) 1989-03-31 1996-02-22 Philips Electronics Nv Elektrisch programmierbare Halbleiterspeicher.
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
DE69017755T2 (de) 1989-05-24 1995-07-13 Texas Instruments Inc Band/Band induzierte Injektion heisser Elektronen aus dem Substrat.
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5739569A (en) 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
JPH0559955U (ja) * 1992-01-09 1993-08-06 株式会社村田製作所 圧電共振器
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5573449A (en) * 1994-03-16 1996-11-12 The Gleason Works Threaded grinding wheel, method of dressing, and grinding a workpiece therewith
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5594685A (en) 1994-12-16 1997-01-14 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current
US5808937A (en) 1994-12-16 1998-09-15 National Semiconductor Corporation Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges
JPH08263992A (ja) 1995-03-24 1996-10-11 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
US5691939A (en) * 1995-12-07 1997-11-25 Programmable Microelectronics Corporation Triple poly PMOS flash memory cell
US5706227A (en) * 1995-12-07 1998-01-06 Programmable Microelectronics Corporation Double poly split gate PMOS flash memory cell
US5703808A (en) * 1996-02-21 1997-12-30 Motorola, Inc. Non-volatile memory cell and method of programming
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US6381670B1 (en) * 1997-01-07 2002-04-30 Aplus Flash Technology, Inc. Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation
US5998826A (en) 1996-09-05 1999-12-07 Macronix International Co., Ltd. Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes
US6201732B1 (en) * 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US6026017A (en) 1997-04-11 2000-02-15 Programmable Silicon Solutions Compact nonvolatile memory
US5896315A (en) 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US5867425A (en) 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US6345000B1 (en) * 1997-04-16 2002-02-05 Sandisk Corporation Flash memory permitting simultaneous read/write and erase operations in a single memory array
JP3727449B2 (ja) 1997-09-30 2005-12-14 シャープ株式会社 半導体ナノ結晶の製造方法
TW354682U (en) 1998-01-12 1999-03-11 Worldwide Semiconductor Mfg Fast flash and erasable RAM
JP3883687B2 (ja) * 1998-02-16 2007-02-21 株式会社ルネサステクノロジ 半導体装置、メモリカード及びデータ処理システム
US6188604B1 (en) * 1998-03-02 2001-02-13 Amic Technology, Inc. Flash memory cell & array with improved pre-program and erase characteristics
TW592730B (en) * 1998-05-15 2004-06-21 Chugai Pharmaceutical Co Ltd Controlled release formulations
US5978269A (en) * 1998-08-17 1999-11-02 National Semiconductor Corporation Apparatus and method for lowering the potential barrier across the source-to-well junction during the programming of non-volatile memory cells
US6281075B1 (en) 1999-01-27 2001-08-28 Sandisk Corporation Method of controlling of floating gate oxide growth by use of an oxygen barrier
US6091635A (en) 1999-03-24 2000-07-18 Worldwide Semiconductor Manufacturing Corporation Electron injection method for substrate-hot-electron program and erase VT tightening for ETOX cell
US6133604A (en) 1999-04-20 2000-10-17 Taiwan Semiconductor Manufacturing Corporation NOR array architecture and operation methods for ETOX cells capable of full EEPROM functions
JP3629383B2 (ja) * 1999-06-10 2005-03-16 シャープ株式会社 不揮発性半導体記憶装置の消去方式
US6060742A (en) 1999-06-16 2000-05-09 Worldwide Semiconductor Manufacturing Corporation ETOX cell having bipolar electron injection for substrate-hot-electron program
TW480736B (en) 1999-06-24 2002-03-21 Taiwan Semiconductor Mfg Program and erase method of flash memory
JP3863330B2 (ja) 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
KR100407572B1 (ko) * 2001-01-10 2003-12-01 삼성전자주식회사 낸드형 플래쉬 메모리 장치에서의 셀 드레쉬홀드 전압의분포를 개선하는 방법
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6620682B1 (en) * 2001-02-27 2003-09-16 Aplus Flash Technology, Inc. Set of three level concurrent word line bias conditions for a nor type flash memory array
US6441428B1 (en) 2001-03-19 2002-08-27 Micron Technology, Inc. One-sided floating-gate memory cell
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
JP4454896B2 (ja) * 2001-09-27 2010-04-21 シャープ株式会社 仮想接地型不揮発性半導体記憶装置
US6656792B2 (en) 2001-10-19 2003-12-02 Chartered Semiconductor Manufacturing Ltd Nanocrystal flash memory device and manufacturing method therefor
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6771536B2 (en) 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
US6570787B1 (en) * 2002-04-19 2003-05-27 Advanced Micro Devices, Inc. Programming with floating source for low power, low leakage and high density flash memory devices
EP1376698A1 (de) 2002-06-25 2004-01-02 STMicroelectronics S.r.l. Elektrisch lösch- und programmierbare nicht flüchtige Speicherzelle
US6781877B2 (en) 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US6891753B2 (en) 2002-09-24 2005-05-10 Sandisk Corporation Highly compact non-volatile memory and method therefor with internal serial buses
US6888755B2 (en) * 2002-10-28 2005-05-03 Sandisk Corporation Flash memory cell arrays having dual control gates per memory cell charge storage element
US7259984B2 (en) 2002-11-26 2007-08-21 Cornell Research Foundation, Inc. Multibit metal nanocrystal memories and fabrication
US7005350B2 (en) * 2002-12-31 2006-02-28 Matrix Semiconductor, Inc. Method for fabricating programmable memory array structures incorporating series-connected transistor strings
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells

Also Published As

Publication number Publication date
TWI391935B (zh) 2013-04-01
EP1829044B1 (de) 2008-11-26
CN100547687C (zh) 2009-10-07
CN101120416A (zh) 2008-02-06
US20060139998A1 (en) 2006-06-29
JP2008525932A (ja) 2008-07-17
JP4195906B2 (ja) 2008-12-17
US7230847B2 (en) 2007-06-12
US7443736B2 (en) 2008-10-28
EP1829044A1 (de) 2007-09-05
WO2006071282A1 (en) 2006-07-06
KR101018667B1 (ko) 2011-03-04
ATE415687T1 (de) 2008-12-15
US20070217264A1 (en) 2007-09-20
KR20070108143A (ko) 2007-11-08
TW200623137A (en) 2006-07-01
US6980471B1 (en) 2005-12-27

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