DE602005012625D1 - Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND - Google Patents

Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND

Info

Publication number
DE602005012625D1
DE602005012625D1 DE602005012625T DE602005012625T DE602005012625D1 DE 602005012625 D1 DE602005012625 D1 DE 602005012625D1 DE 602005012625 T DE602005012625 T DE 602005012625T DE 602005012625 T DE602005012625 T DE 602005012625T DE 602005012625 D1 DE602005012625 D1 DE 602005012625D1
Authority
DE
Germany
Prior art keywords
accessing
memory device
level memory
nand nonvolatile
flash nand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005012625T
Other languages
English (en)
Inventor
Angelo Bovino
Vincenzo Altieri
Roberto Ravasio
Rino Micheloni
Matteis Mario De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
SK Hynix Inc
Original Assignee
STMicroelectronics SRL
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Hynix Semiconductor Inc filed Critical STMicroelectronics SRL
Publication of DE602005012625D1 publication Critical patent/DE602005012625D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
DE602005012625T 2005-07-22 2005-07-22 Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND Active DE602005012625D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05106783A EP1746604B1 (de) 2005-07-22 2005-07-22 Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND

Publications (1)

Publication Number Publication Date
DE602005012625D1 true DE602005012625D1 (de) 2009-03-19

Family

ID=35519961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005012625T Active DE602005012625D1 (de) 2005-07-22 2005-07-22 Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND

Country Status (3)

Country Link
US (1) US7382660B2 (de)
EP (1) EP1746604B1 (de)
DE (1) DE602005012625D1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
KR100769776B1 (ko) * 2006-09-29 2007-10-24 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 프로그램 방법
US7593262B2 (en) * 2006-12-12 2009-09-22 Macronix International Co., Ltd. Memory structure and operating method thereof
US7580292B2 (en) 2007-06-14 2009-08-25 Macronix International Co., Ltd. Method for programming a multilevel memory
KR20090055314A (ko) * 2007-11-28 2009-06-02 삼성전자주식회사 읽기 디스터번스를 줄일 수 있는 불휘발성 메모리 장치
CN101364444B (zh) * 2008-02-05 2011-05-11 威盛电子股份有限公司 控制方法及运用该控制方法的存储器及处理系统
US8127091B2 (en) * 2008-10-30 2012-02-28 Micron Technology, Inc. Programming memory cells with additional data for increased threshold voltage resolution
US8341501B2 (en) 2009-04-30 2012-12-25 International Business Machines Corporation Adaptive endurance coding of non-volatile memories
US8176235B2 (en) * 2009-12-04 2012-05-08 International Business Machines Corporation Non-volatile memories with enhanced write performance and endurance
US8176234B2 (en) * 2009-12-04 2012-05-08 International Business Machines Corporation Multi-write coding of non-volatile memories
US8769374B2 (en) 2010-10-13 2014-07-01 International Business Machines Corporation Multi-write endurance and error control coding of non-volatile memories
KR101925384B1 (ko) 2011-05-17 2019-02-28 삼성전자주식회사 불휘발성 메모리를 포함하는 메모리 시스템 및 불휘발성 메모리의 제어 방법
US8699266B2 (en) * 2012-01-30 2014-04-15 HGST Netherlands B.V. Implementing enhanced data write for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
US8792272B2 (en) 2012-01-30 2014-07-29 HGST Netherlands B.V. Implementing enhanced data partial-erase for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
US9208871B2 (en) 2012-01-30 2015-12-08 HGST Netherlands B.V. Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
KR20160071118A (ko) * 2014-12-11 2016-06-21 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
KR102649347B1 (ko) 2016-10-11 2024-03-20 삼성전자주식회사 불휘발성 메모리 장치를 프로그램하는 방법과, 상기 메모리 장치를 포함하는 시스템의 작동 방법
JP2024503771A (ja) * 2021-12-14 2024-01-29 長江存儲科技有限責任公司 メモリーデバイスおよびその動作

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093288A (ja) * 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
US7057939B2 (en) * 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
US7298648B2 (en) * 2004-11-19 2007-11-20 Samsung Electronics Co., Ltd. Page buffer and multi-state nonvolatile memory device including the same
US7251160B2 (en) * 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
US7224614B1 (en) * 2005-12-29 2007-05-29 Sandisk Corporation Methods for improved program-verify operations in non-volatile memories
US7733704B2 (en) * 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing

Also Published As

Publication number Publication date
EP1746604B1 (de) 2009-02-04
EP1746604A1 (de) 2007-01-24
US7382660B2 (en) 2008-06-03
US20070047299A1 (en) 2007-03-01

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