DE602005023740D1 - Belichtungsvorrichtung und belichtungsverfahren - Google Patents

Belichtungsvorrichtung und belichtungsverfahren

Info

Publication number
DE602005023740D1
DE602005023740D1 DE602005023740T DE602005023740T DE602005023740D1 DE 602005023740 D1 DE602005023740 D1 DE 602005023740D1 DE 602005023740 T DE602005023740 T DE 602005023740T DE 602005023740 T DE602005023740 T DE 602005023740T DE 602005023740 D1 DE602005023740 D1 DE 602005023740D1
Authority
DE
Germany
Prior art keywords
light
splitting element
optical path
optical
light splitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005023740T
Other languages
English (en)
Inventor
Motoo Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35509985&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE602005023740(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Publication of DE602005023740D1 publication Critical patent/DE602005023740D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0414—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using plane or convex mirrors, parallel phase plates, or plane beam-splitters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
DE602005023740T 2004-06-18 2005-06-06 Belichtungsvorrichtung und belichtungsverfahren Active DE602005023740D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004180816 2004-06-18
PCT/JP2005/010356 WO2005124831A1 (ja) 2004-06-18 2005-06-06 光検出装置、照明光学装置、露光装置、および露光方法

Publications (1)

Publication Number Publication Date
DE602005023740D1 true DE602005023740D1 (de) 2010-11-04

Family

ID=35509985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005023740T Active DE602005023740D1 (de) 2004-06-18 2005-06-06 Belichtungsvorrichtung und belichtungsverfahren

Country Status (8)

Country Link
US (1) US7573019B2 (de)
EP (1) EP1780770B2 (de)
JP (1) JP4730712B2 (de)
KR (2) KR101251167B1 (de)
AT (1) ATE482465T1 (de)
DE (1) DE602005023740D1 (de)
HK (1) HK1099606A1 (de)
WO (1) WO2005124831A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463272B (zh) * 2010-11-30 2014-12-01 Ushio Electric Inc Light irradiation device
US9528906B1 (en) * 2013-12-19 2016-12-27 Apple Inc. Monitoring DOE performance using total internal reflection
US10113903B1 (en) * 2014-09-02 2018-10-30 Amazon Technologies, Inc. Ambient light sensor calibration
US10073004B2 (en) 2016-09-19 2018-09-11 Apple Inc. DOE defect monitoring utilizing total internal reflection
DE102018124314B9 (de) * 2018-10-02 2020-12-31 Carl Zeiss Smt Gmbh Vorrichtung zur Bestimmung der Belichtungsenergie bei der Belichtung eines Elements in einem optischen System, insbesondere für die Mikrolithographie
JP2023552094A (ja) * 2020-11-24 2023-12-14 アプライド マテリアルズ インコーポレイテッド 拡張現実感計測学ツールのための照明システム

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172646A (en) † 1972-12-11 1979-10-30 Canon Kabushiki Kaisha Device to control introduction of diffracted beam by means of diffraction element
DE2654464A1 (de) † 1976-12-01 1978-06-08 Sick Optik Elektronik Erwin Photoelektrische lichtempfangsanordnung
JPS5627117A (en) * 1979-08-10 1981-03-16 Canon Inc Light splitter
JPS5727227A (en) 1980-07-25 1982-02-13 Canon Inc Optical separator
US4591256A (en) † 1982-11-08 1986-05-27 Canon Kabushiki Kaisha Beam splitter and light measuring device for camera
JPH0782981B2 (ja) † 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
GB9424523D0 (en) * 1994-12-05 1995-01-25 At & T Global Inf Solution Optical receiver for modulated light
JPH08203803A (ja) 1995-01-24 1996-08-09 Nikon Corp 露光装置
WO1997031298A1 (en) * 1996-02-23 1997-08-28 Asm Lithography B.V. Illumination unit for an optical apparatus
JPH10153866A (ja) * 1996-11-22 1998-06-09 Nikon Corp 照明装置および該照明装置を備えた露光装置
JP3762102B2 (ja) † 1998-06-04 2006-04-05 キヤノン株式会社 走査型投影露光装置及びそれを用いたデバイスの製造方法
JP3710321B2 (ja) * 1999-04-01 2005-10-26 キヤノン株式会社 露光量制御方法、露光装置およびデバイス製造方法
US6728034B1 (en) 1999-06-16 2004-04-27 Matsushita Electric Industrial Co., Ltd. Diffractive optical element that polarizes light and an optical pickup using the same
JP2001059905A (ja) 1999-06-16 2001-03-06 Matsushita Electronics Industry Corp 回折型光学素子および当該回折型光学素子を用いた光ピックアップ
EP1116982A3 (de) † 2000-01-11 2004-06-09 Carl Zeiss Strahlenteiler
JP2003110802A (ja) * 2001-09-27 2003-04-11 Fuji Photo Film Co Ltd 撮像装置
JP2003257846A (ja) * 2002-03-07 2003-09-12 Nikon Corp 光源ユニット、照明装置、露光装置及び露光方法

Also Published As

Publication number Publication date
KR20120034139A (ko) 2012-04-09
US7573019B2 (en) 2009-08-11
JPWO2005124831A1 (ja) 2008-04-17
JP4730712B2 (ja) 2011-07-20
KR20070026797A (ko) 2007-03-08
KR101251167B1 (ko) 2013-04-05
KR101173715B1 (ko) 2012-08-13
US20080042044A1 (en) 2008-02-21
HK1099606A1 (en) 2007-08-17
EP1780770B1 (de) 2010-09-22
EP1780770A1 (de) 2007-05-02
EP1780770B2 (de) 2017-01-25
ATE482465T1 (de) 2010-10-15
WO2005124831A1 (ja) 2005-12-29
EP1780770A4 (de) 2008-02-27

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