DE602005027810D1 - Selbst-boost-system für flash-speicherzellen - Google Patents
Selbst-boost-system für flash-speicherzellenInfo
- Publication number
- DE602005027810D1 DE602005027810D1 DE602005027810T DE602005027810T DE602005027810D1 DE 602005027810 D1 DE602005027810 D1 DE 602005027810D1 DE 602005027810 T DE602005027810 T DE 602005027810T DE 602005027810 T DE602005027810 T DE 602005027810T DE 602005027810 D1 DE602005027810 D1 DE 602005027810D1
- Authority
- DE
- Germany
- Prior art keywords
- word line
- self boosting
- band
- reduce
- word lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/774,014 US7161833B2 (en) | 2004-02-06 | 2004-02-06 | Self-boosting system for flash memory cells |
| PCT/US2005/001962 WO2005078733A2 (en) | 2004-02-06 | 2005-01-20 | Self-boosting system for flash memory cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602005027810D1 true DE602005027810D1 (de) | 2011-06-16 |
Family
ID=34826888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602005027810T Active DE602005027810D1 (de) | 2004-02-06 | 2005-01-20 | Selbst-boost-system für flash-speicherzellen |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US7161833B2 (de) |
| EP (2) | EP1714291B1 (de) |
| JP (2) | JP4819702B2 (de) |
| KR (1) | KR101161152B1 (de) |
| CN (1) | CN100555453C (de) |
| AT (1) | ATE508460T1 (de) |
| DE (1) | DE602005027810D1 (de) |
| TW (1) | TWI328228B (de) |
| WO (1) | WO2005078733A2 (de) |
Families Citing this family (113)
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-
2004
- 2004-02-06 US US10/774,014 patent/US7161833B2/en not_active Expired - Lifetime
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2005
- 2005-01-20 DE DE602005027810T patent/DE602005027810D1/de active Active
- 2005-01-20 AT AT05711788T patent/ATE508460T1/de not_active IP Right Cessation
- 2005-01-20 WO PCT/US2005/001962 patent/WO2005078733A2/en active Application Filing
- 2005-01-20 EP EP05711788A patent/EP1714291B1/de active Active
- 2005-01-20 JP JP2006552138A patent/JP4819702B2/ja active Active
- 2005-01-20 KR KR1020067015940A patent/KR101161152B1/ko not_active IP Right Cessation
- 2005-01-20 EP EP10011075A patent/EP2341506A3/de not_active Withdrawn
- 2005-01-20 CN CNB2005800088859A patent/CN100555453C/zh active Active
- 2005-02-02 TW TW094103221A patent/TWI328228B/zh not_active IP Right Cessation
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2007520850A (ja) | 2007-07-26 |
| US7773414B2 (en) | 2010-08-10 |
| JP4819702B2 (ja) | 2011-11-24 |
| US20090073761A1 (en) | 2009-03-19 |
| ATE508460T1 (de) | 2011-05-15 |
| EP2341506A3 (de) | 2012-03-21 |
| US20050174852A1 (en) | 2005-08-11 |
| WO2005078733A2 (en) | 2005-08-25 |
| EP1714291A2 (de) | 2006-10-25 |
| US7471566B2 (en) | 2008-12-30 |
| WO2005078733A3 (en) | 2005-10-13 |
| TWI328228B (en) | 2010-08-01 |
| EP1714291B1 (de) | 2011-05-04 |
| KR101161152B1 (ko) | 2012-07-03 |
| KR20060133576A (ko) | 2006-12-26 |
| JP5416161B2 (ja) | 2014-02-12 |
| TW200608398A (en) | 2006-03-01 |
| CN1934653A (zh) | 2007-03-21 |
| EP2341506A2 (de) | 2011-07-06 |
| CN100555453C (zh) | 2009-10-28 |
| US7161833B2 (en) | 2007-01-09 |
| JP2011154778A (ja) | 2011-08-11 |
| US20070081384A1 (en) | 2007-04-12 |
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