DE602006001237D1 - Nichtflüchtige Speichervorrichtung und Verfahren zur Speicherung von Statusinformationen unter Verwendung mehrfacher Strings - Google Patents
Nichtflüchtige Speichervorrichtung und Verfahren zur Speicherung von Statusinformationen unter Verwendung mehrfacher StringsInfo
- Publication number
- DE602006001237D1 DE602006001237D1 DE602006001237T DE602006001237T DE602006001237D1 DE 602006001237 D1 DE602006001237 D1 DE 602006001237D1 DE 602006001237 T DE602006001237 T DE 602006001237T DE 602006001237 T DE602006001237 T DE 602006001237T DE 602006001237 D1 DE602006001237 D1 DE 602006001237D1
- Authority
- DE
- Germany
- Prior art keywords
- status information
- strings
- memory device
- multiple strings
- volatile memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050024970A KR100704628B1 (ko) | 2005-03-25 | 2005-03-25 | 다수의 스트링을 사용하여 상태 정보를 저장하는 방법 및비휘발성 저장 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006001237D1 true DE602006001237D1 (de) | 2008-07-03 |
Family
ID=36579802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006001237T Active DE602006001237D1 (de) | 2005-03-25 | 2006-03-23 | Nichtflüchtige Speichervorrichtung und Verfahren zur Speicherung von Statusinformationen unter Verwendung mehrfacher Strings |
Country Status (7)
Country | Link |
---|---|
US (1) | US7457911B2 (de) |
EP (1) | EP1708203B1 (de) |
JP (1) | JP4455524B2 (de) |
KR (1) | KR100704628B1 (de) |
CN (1) | CN100550201C (de) |
AT (1) | ATE396483T1 (de) |
DE (1) | DE602006001237D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006302342A (ja) * | 2005-04-15 | 2006-11-02 | Toshiba Corp | 不揮発性半導体メモリ装置とメモリシステム |
US7852690B2 (en) * | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US7639531B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US7911834B2 (en) * | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
US7701797B2 (en) * | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US7551486B2 (en) * | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
US7568135B2 (en) * | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7639542B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US7511646B2 (en) * | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
US8000134B2 (en) * | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7613043B2 (en) * | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
JP4660520B2 (ja) * | 2007-09-03 | 2011-03-30 | 株式会社東芝 | 不揮発性半導体記憶装置およびその駆動方法 |
US8261174B2 (en) | 2009-01-13 | 2012-09-04 | International Business Machines Corporation | Protecting and migrating memory lines |
KR101616099B1 (ko) * | 2009-12-03 | 2016-04-27 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
CN105989898B (zh) * | 2014-10-08 | 2018-11-27 | 光宝科技股份有限公司 | 存储器阵列中故障地址的数据结构及故障地址的编码方法 |
KR102438988B1 (ko) * | 2016-04-07 | 2022-09-02 | 삼성전자주식회사 | 랜덤화 연산을 수행하는 불휘발성 메모리 장치 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3155847B2 (ja) | 1993-01-13 | 2001-04-16 | 株式会社東芝 | 不揮発性半導体記憶装置およびこれを用いた記憶システム |
JPH07122080A (ja) * | 1993-08-31 | 1995-05-12 | Sony Corp | 半導体不揮発性記憶装置 |
US5603001A (en) | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
JP2848300B2 (ja) | 1995-12-27 | 1999-01-20 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
KR100206709B1 (ko) * | 1996-09-21 | 1999-07-01 | 윤종용 | 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법 |
US6975425B1 (en) * | 1998-02-26 | 2005-12-13 | Canon Kabushiki Kaisha | Information processing apparatus and information processing method |
JP3822081B2 (ja) | 2001-09-28 | 2006-09-13 | 東京エレクトロンデバイス株式会社 | データ書込装置、データ書込制御方法及びプログラム |
KR100454119B1 (ko) | 2001-10-24 | 2004-10-26 | 삼성전자주식회사 | 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들 |
US6740940B2 (en) | 2001-11-27 | 2004-05-25 | Samsung Electronics Co., Ltd. | Semiconductor memory devices having dummy active regions |
JP2003196142A (ja) | 2001-12-25 | 2003-07-11 | Sony Corp | ライトワンス型メモリ装置及びファイル管理方法 |
US6549457B1 (en) | 2002-02-15 | 2003-04-15 | Intel Corporation | Using multiple status bits per cell for handling power failures during write operations |
JP3935139B2 (ja) | 2002-11-29 | 2007-06-20 | 株式会社東芝 | 半導体記憶装置 |
KR100518777B1 (ko) * | 2003-09-05 | 2005-10-06 | 한국원자력연구소 | 지진 안전성 평가시스템 및 그 방법 |
-
2005
- 2005-03-25 KR KR1020050024970A patent/KR100704628B1/ko active IP Right Grant
-
2006
- 2006-03-13 CN CNB2006100570265A patent/CN100550201C/zh active Active
- 2006-03-16 JP JP2006072733A patent/JP4455524B2/ja active Active
- 2006-03-22 US US11/385,804 patent/US7457911B2/en active Active
- 2006-03-23 DE DE602006001237T patent/DE602006001237D1/de active Active
- 2006-03-23 EP EP06111631A patent/EP1708203B1/de active Active
- 2006-03-23 AT AT06111631T patent/ATE396483T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1708203A1 (de) | 2006-10-04 |
KR100704628B1 (ko) | 2007-04-09 |
US20060215454A1 (en) | 2006-09-28 |
US7457911B2 (en) | 2008-11-25 |
EP1708203B1 (de) | 2008-05-21 |
CN100550201C (zh) | 2009-10-14 |
JP2006277921A (ja) | 2006-10-12 |
ATE396483T1 (de) | 2008-06-15 |
JP4455524B2 (ja) | 2010-04-21 |
KR20060102908A (ko) | 2006-09-28 |
CN1838319A (zh) | 2006-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602006001237D1 (de) | Nichtflüchtige Speichervorrichtung und Verfahren zur Speicherung von Statusinformationen unter Verwendung mehrfacher Strings | |
DE602006008596D1 (de) | Verwendung von datensperren bei der mehrphasigen programmierung nicht-flüchtiger speicher | |
ATE478422T1 (de) | Speicherblocklöschung in einer flash-speicher- vorrichtung | |
ATE411604T1 (de) | Gelatchte programmierung von speicher und verfahren | |
WO2008098363A8 (en) | Non-volatile memory with dynamic multi-mode operation | |
ATE387715T1 (de) | Nichtflüchtiger halbleiterspeicher mit zykluszählwerte speichernden grossen löschblöcken | |
ATE496372T1 (de) | Vorrichtung und verfahren für speicheroperationen unter verwendung adressabhängiger bedingungen | |
DE602006015930D1 (de) | Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen | |
WO2008132725A3 (en) | A method for efficient storage of metadata in flash memory | |
TW200638425A (en) | Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same | |
WO2009037691A3 (en) | Programming orders for reducing distortion in arrays of multi-level analog memory cells | |
JP2008158955A5 (de) | ||
WO2011153000A3 (en) | Advanced bitwise operations and apparatus in a multi-level system with nonvolatile memory | |
ATE443330T1 (de) | Verfahren und system zur optimierung von zuverlässigkeit und leistungsfähigkeit von programmierdaten in nichtflüchtigen speicherbausteinen | |
WO2009139574A3 (en) | Memory device and method of managing memory data error | |
ATE422267T1 (de) | Nichtflüchtige mehrzweckspeicherkarte | |
WO2009072104A8 (en) | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith | |
WO2009089612A8 (en) | Nonvolatile semiconductor memory device | |
WO2009139567A3 (en) | Memory device and memory programming method | |
TW201129985A (en) | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell | |
ATE512441T1 (de) | Bereitstellung von energiereduktion bei der datenspeicherung in einem speicher | |
WO2003100786A3 (en) | Serially sensing the output of multilevel cell arrays | |
JP2007087526A5 (de) | ||
ATE545934T1 (de) | Speichersystem | |
TW200710851A (en) | Non-volatile memory device, and control method of non-volatile memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |