DE602006001686D1 - Photoelektrische Umwandleranordnung und Verfahren zu ihrer Herstellung - Google Patents
Photoelektrische Umwandleranordnung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE602006001686D1 DE602006001686D1 DE602006001686T DE602006001686T DE602006001686D1 DE 602006001686 D1 DE602006001686 D1 DE 602006001686D1 DE 602006001686 T DE602006001686 T DE 602006001686T DE 602006001686 T DE602006001686 T DE 602006001686T DE 602006001686 D1 DE602006001686 D1 DE 602006001686D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- photoelectric conversion
- conversion device
- photoelectric
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/18—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors using comparison with a reference electric value
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4406—Plural ranges in circuit, e.g. switchable ranges; Adjusting sensitivity selecting gain values
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005148864 | 2005-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006001686D1 true DE602006001686D1 (de) | 2008-08-21 |
Family
ID=36930194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006001686T Active DE602006001686D1 (de) | 2005-05-23 | 2006-05-04 | Photoelektrische Umwandleranordnung und Verfahren zu ihrer Herstellung |
Country Status (6)
Country | Link |
---|---|
US (2) | US7705283B2 (de) |
EP (1) | EP1727120B1 (de) |
KR (1) | KR101250293B1 (de) |
CN (1) | CN1877269B (de) |
DE (1) | DE602006001686D1 (de) |
TW (1) | TWI423431B (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1724844A2 (de) * | 2005-05-20 | 2006-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelektrische Umwandlungsvorrichtung, Herstellungsverfahren und Halbleitervorrichtung |
KR101281991B1 (ko) * | 2005-07-27 | 2013-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8053816B2 (en) | 2006-03-10 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101315282B1 (ko) | 2006-04-27 | 2013-10-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 사용한 전자기기 |
JP4187006B2 (ja) * | 2006-04-28 | 2008-11-26 | エプソンイメージングデバイス株式会社 | 電子回路、電気光学装置およびこれを備える電子機器 |
CN101438418B (zh) * | 2006-04-28 | 2011-01-26 | 株式会社半导体能源研究所 | 光电转换元件和光电转换元件制造方法 |
US7791012B2 (en) * | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
US8058675B2 (en) | 2006-12-27 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device using the same |
US7923800B2 (en) * | 2006-12-27 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP2008181109A (ja) * | 2006-12-27 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及びそれを用いた電子機器 |
US8514165B2 (en) * | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7759629B2 (en) * | 2007-03-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
WO2008123119A1 (en) | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device provided with the photoelectric conversion device |
KR20080101680A (ko) | 2007-05-18 | 2008-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시장치, 전자 기기, 및 그의 구동방법 |
KR101401528B1 (ko) * | 2007-06-29 | 2014-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전변환장치 및 그 광전변환장치를 구비하는 전자기기 |
WO2009014155A1 (en) * | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
EP2075840B1 (de) | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zum Scheiden eines Wafers mit darauf geformten Halbleiterelementen und dazugehörendes Bauteil |
JP5448584B2 (ja) * | 2008-06-25 | 2014-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
DE102008053707B3 (de) * | 2008-10-29 | 2010-04-15 | Atmel Automotive Gmbh | Schaltung und Verfahren zum Betrieb einer Schaltung |
KR102223581B1 (ko) * | 2009-10-21 | 2021-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
US8637802B2 (en) * | 2010-06-18 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Photosensor, semiconductor device including photosensor, and light measurement method using photosensor |
US9117958B2 (en) | 2010-06-25 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device comprising photoelectric conversion element |
US8716646B2 (en) | 2010-10-08 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for operating the same |
CN102147292B (zh) * | 2011-01-12 | 2012-10-24 | 北京广微积电科技有限公司 | 红外焦平面阵列及其读出电路 |
US9048788B2 (en) | 2011-05-13 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photoelectric conversion portion |
JP2014035307A (ja) | 2012-08-10 | 2014-02-24 | Hitachi High-Technologies Corp | 欠陥検査装置、及び欠陥検査方法 |
CN107677366A (zh) * | 2017-09-27 | 2018-02-09 | 中国科学院合肥物质科学研究院 | 一种大动态范围的辐照度计观测系统 |
US10559596B2 (en) | 2018-03-23 | 2020-02-11 | Innolux Corporation | Display device |
KR102523383B1 (ko) * | 2018-11-16 | 2023-04-19 | 엘지디스플레이 주식회사 | 포토 센서가 내장된 표시패널과 이를 이용한 표시장치 |
US11121281B2 (en) * | 2019-07-08 | 2021-09-14 | Arizona Board Of Regents On Behalf Of Arizona State University | Systems and methods for light direction detection microchips |
CN112710389A (zh) * | 2019-10-24 | 2021-04-27 | 光焱科技股份有限公司 | 光侦测装置 |
CN112816067A (zh) * | 2019-11-18 | 2021-05-18 | 光焱科技股份有限公司 | 光侦测方法 |
WO2024057308A1 (en) * | 2022-09-12 | 2024-03-21 | Wi-Charge Ltd. | Efficient wireless power receiver |
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US7253391B2 (en) | 2003-09-19 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor device and electronic apparatus |
JP4481135B2 (ja) | 2003-10-06 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
CN100477240C (zh) | 2003-10-06 | 2009-04-08 | 株式会社半导体能源研究所 | 半导体器件以及制造该器件的方法 |
EP1523043B1 (de) | 2003-10-06 | 2011-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Optischer Sensor und dessen Herstellungsverfahren |
JP4295075B2 (ja) | 2003-12-05 | 2009-07-15 | 日本電信電話株式会社 | 光・電気変換回路および電界検出光学装置 |
CN100594619C (zh) | 2004-05-21 | 2010-03-17 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
-
2006
- 2006-05-04 EP EP06009252A patent/EP1727120B1/de not_active Expired - Fee Related
- 2006-05-04 DE DE602006001686T patent/DE602006001686D1/de active Active
- 2006-05-18 TW TW095117702A patent/TWI423431B/zh not_active IP Right Cessation
- 2006-05-18 US US11/436,086 patent/US7705283B2/en not_active Expired - Fee Related
- 2006-05-23 KR KR1020060046167A patent/KR101250293B1/ko active IP Right Grant
- 2006-05-23 CN CN2006100848834A patent/CN1877269B/zh not_active Expired - Fee Related
-
2010
- 2010-04-01 US US12/752,173 patent/US8263926B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1877269A (zh) | 2006-12-13 |
KR20060121728A (ko) | 2006-11-29 |
US20100187405A1 (en) | 2010-07-29 |
US7705283B2 (en) | 2010-04-27 |
EP1727120B1 (de) | 2008-07-09 |
KR101250293B1 (ko) | 2013-04-03 |
EP1727120A1 (de) | 2006-11-29 |
US20060261253A1 (en) | 2006-11-23 |
TWI423431B (zh) | 2014-01-11 |
TW200703632A (en) | 2007-01-16 |
US8263926B2 (en) | 2012-09-11 |
CN1877269B (zh) | 2010-12-29 |
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