DE602006005664D1 - Programmverfahren für flash-speicher mit optimiertem spannungspegel abhängig von der anzahl der bit, von denen detektiert wurde, dass ihre programmierung erfolglos war - Google Patents

Programmverfahren für flash-speicher mit optimiertem spannungspegel abhängig von der anzahl der bit, von denen detektiert wurde, dass ihre programmierung erfolglos war

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Publication number
DE602006005664D1
DE602006005664D1 DE602006005664T DE602006005664T DE602006005664D1 DE 602006005664 D1 DE602006005664 D1 DE 602006005664D1 DE 602006005664 T DE602006005664 T DE 602006005664T DE 602006005664 T DE602006005664 T DE 602006005664T DE 602006005664 D1 DE602006005664 D1 DE 602006005664D1
Authority
DE
Germany
Prior art keywords
programming
flash memory
volatile memory
programming voltage
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006005664T
Other languages
English (en)
Inventor
Chang Ha Wan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE602006005664D1 publication Critical patent/DE602006005664D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0409—Online test
DE602006005664T 2005-06-17 2006-06-13 Programmverfahren für flash-speicher mit optimiertem spannungspegel abhängig von der anzahl der bit, von denen detektiert wurde, dass ihre programmierung erfolglos war Active DE602006005664D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/156,223 US7239557B2 (en) 2005-06-17 2005-06-17 Program method with optimized voltage level for flash memory
PCT/US2006/023086 WO2006138333A1 (en) 2005-06-17 2006-06-13 Program method for flash memory with optimized voltage level dependent of the number of bits detected to have failed programming

Publications (1)

Publication Number Publication Date
DE602006005664D1 true DE602006005664D1 (de) 2009-04-23

Family

ID=37084634

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006005664T Active DE602006005664D1 (de) 2005-06-17 2006-06-13 Programmverfahren für flash-speicher mit optimiertem spannungspegel abhängig von der anzahl der bit, von denen detektiert wurde, dass ihre programmierung erfolglos war

Country Status (9)

Country Link
US (4) US7239557B2 (de)
EP (1) EP1894207B1 (de)
JP (1) JP4640660B2 (de)
KR (1) KR100956709B1 (de)
CN (1) CN101268520B (de)
AT (1) ATE425539T1 (de)
DE (1) DE602006005664D1 (de)
TW (1) TWI305918B (de)
WO (1) WO2006138333A1 (de)

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Also Published As

Publication number Publication date
TWI305918B (en) 2009-02-01
ATE425539T1 (de) 2009-03-15
JP2008544435A (ja) 2008-12-04
KR100956709B1 (ko) 2010-05-06
US7239557B2 (en) 2007-07-03
WO2006138333A1 (en) 2006-12-28
EP1894207B1 (de) 2009-03-11
TW200713284A (en) 2007-04-01
US7453737B2 (en) 2008-11-18
EP1894207A1 (de) 2008-03-05
US20080031047A1 (en) 2008-02-07
US7663934B2 (en) 2010-02-16
CN101268520A (zh) 2008-09-17
KR20080019713A (ko) 2008-03-04
US20100142283A1 (en) 2010-06-10
US7876623B2 (en) 2011-01-25
US20060285396A1 (en) 2006-12-21
US20090073772A1 (en) 2009-03-19
JP4640660B2 (ja) 2011-03-02
CN101268520B (zh) 2012-03-28

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