DE602006007908D1 - Vorrichtung und Verfahren zum polieren von Halbleiterscheiben - Google Patents
Vorrichtung und Verfahren zum polieren von HalbleiterscheibenInfo
- Publication number
- DE602006007908D1 DE602006007908D1 DE602006007908T DE602006007908T DE602006007908D1 DE 602006007908 D1 DE602006007908 D1 DE 602006007908D1 DE 602006007908 T DE602006007908 T DE 602006007908T DE 602006007908 T DE602006007908 T DE 602006007908T DE 602006007908 D1 DE602006007908 D1 DE 602006007908D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor wafers
- polishing semiconductor
- polishing
- wafers
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005145612A JP4524643B2 (ja) | 2005-05-18 | 2005-05-18 | ウェーハ研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602006007908D1 true DE602006007908D1 (de) | 2009-09-03 |
Family
ID=36791692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602006007908T Active DE602006007908D1 (de) | 2005-05-18 | 2006-05-15 | Vorrichtung und Verfahren zum polieren von Halbleiterscheiben |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7717768B2 (de) |
| EP (1) | EP1726402B1 (de) |
| JP (1) | JP4524643B2 (de) |
| KR (1) | KR100832768B1 (de) |
| DE (1) | DE602006007908D1 (de) |
| TW (1) | TWI320586B (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8834230B2 (en) | 2008-07-31 | 2014-09-16 | Shin-Etsu Handotai Co., Ltd. | Wafer polishing method and double-side polishing apparatus |
| DE102009033206A1 (de) * | 2009-07-15 | 2011-01-27 | Brand, Guido | Polierverfahren und Poliervorrichtung zur Korrektur von geometrischen Abweichungsfehlern auf Präzisionsoberflächen |
| JP6377656B2 (ja) | 2016-02-29 | 2018-08-22 | 株式会社フジミインコーポレーテッド | シリコン基板の研磨方法および研磨用組成物セット |
| US11897081B2 (en) | 2016-03-01 | 2024-02-13 | Fujimi Incorporated | Method for polishing silicon substrate and polishing composition set |
| US10875149B2 (en) * | 2017-03-30 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for timed dispensing various slurry components |
| CN108544362B (zh) * | 2018-03-30 | 2020-11-03 | 泰州鸿行信息科技有限公司 | 一种化学机械抛光设备 |
| US20200055160A1 (en) * | 2018-08-14 | 2020-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing method and apparatus |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2780038A (en) * | 1954-09-08 | 1957-02-05 | Glaceries Sambre Sa | Glass grinding and polishing method and apparatus |
| JPS62188669A (ja) * | 1986-02-14 | 1987-08-18 | Mitsubishi Metal Corp | 研摩装置 |
| JPS6478758A (en) * | 1987-09-16 | 1989-03-24 | Toshiba Corp | Polishing device for printing circuit board |
| JPH04129664A (ja) * | 1990-09-14 | 1992-04-30 | Showa Alum Corp | ワークの研磨加工法 |
| JPH05138529A (ja) * | 1991-11-15 | 1993-06-01 | Yokogawa Electric Corp | 研磨装置 |
| JPH05162065A (ja) * | 1991-12-13 | 1993-06-29 | Murata Mfg Co Ltd | 浮遊砥粒式研磨装置 |
| US5700180A (en) | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
| US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
| US5571373A (en) * | 1994-05-18 | 1996-11-05 | Memc Electronic Materials, Inc. | Method of rough polishing semiconductor wafers to reduce surface roughness |
| JP3438383B2 (ja) | 1995-03-03 | 2003-08-18 | ソニー株式会社 | 研磨方法およびこれに用いる研磨装置 |
| JPH1015808A (ja) * | 1996-06-28 | 1998-01-20 | Canon Inc | 化学機械研磨装置および方法 |
| US5664990A (en) | 1996-07-29 | 1997-09-09 | Integrated Process Equipment Corp. | Slurry recycling in CMP apparatus |
| JPH10128654A (ja) | 1996-10-31 | 1998-05-19 | Toshiba Corp | Ｃｍｐ装置及び該ｃｍｐ装置に用いることのできる研磨布 |
| JPH10180616A (ja) * | 1996-12-19 | 1998-07-07 | Hitachi Ltd | 研磨装置及び研磨方法 |
| JP3575942B2 (ja) * | 1997-02-28 | 2004-10-13 | 株式会社東芝 | 半導体装置の製造方法 |
| US6736714B2 (en) | 1997-07-30 | 2004-05-18 | Praxair S.T. Technology, Inc. | Polishing silicon wafers |
| EP1089851B1 (de) | 1998-06-25 | 2002-10-16 | Unova U.K. Limited | Verfahren und vorrichtung zum abfasen von halbleiterscheiben |
| KR100297375B1 (ko) | 1998-09-30 | 2001-08-07 | 윤종용 | 조립기판연마설비,연마방법및이를이용한박형디스플레이장치제조방법 |
| US6227949B1 (en) * | 1999-06-03 | 2001-05-08 | Promos Technologies, Inc. | Two-slurry CMP polishing with different particle size abrasives |
| US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
| US6228771B1 (en) * | 2000-03-23 | 2001-05-08 | Infineon Technologies North America Corp. | Chemical mechanical polishing process for low dishing of metal lines in semiconductor wafer fabrication |
| US6599173B1 (en) * | 2000-06-30 | 2003-07-29 | International Business Machines Corporation | Method to prevent leaving residual metal in CMP process of metal interconnect |
| KR100570122B1 (ko) * | 2003-05-12 | 2006-04-11 | 학교법인 한양학원 | 나노토포그라피 효과를 보상할 수 있는 화학기계적 연마용슬러리 조성물 및 이를 이용한 반도체소자의 표면 평탄화방법 |
-
2005
- 2005-05-18 JP JP2005145612A patent/JP4524643B2/ja active Active
-
2006
- 2006-05-11 US US11/433,701 patent/US7717768B2/en active Active
- 2006-05-15 KR KR1020060043370A patent/KR100832768B1/ko active IP Right Grant
- 2006-05-15 TW TW095117119A patent/TWI320586B/zh active
- 2006-05-15 DE DE602006007908T patent/DE602006007908D1/de active Active
- 2006-05-15 EP EP06009972A patent/EP1726402B1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006324417A (ja) | 2006-11-30 |
| JP4524643B2 (ja) | 2010-08-18 |
| TW200707568A (en) | 2007-02-16 |
| US20060264157A1 (en) | 2006-11-23 |
| TWI320586B (en) | 2010-02-11 |
| EP1726402A1 (de) | 2006-11-29 |
| KR20060119767A (ko) | 2006-11-24 |
| US7717768B2 (en) | 2010-05-18 |
| KR100832768B1 (ko) | 2008-05-27 |
| EP1726402B1 (de) | 2009-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |