DE602006018598D1 - Pixel Layout mit Speicherkapazität integriert in Source-Folger MOSFET Verstärker - Google Patents

Pixel Layout mit Speicherkapazität integriert in Source-Folger MOSFET Verstärker

Info

Publication number
DE602006018598D1
DE602006018598D1 DE602006018598T DE602006018598T DE602006018598D1 DE 602006018598 D1 DE602006018598 D1 DE 602006018598D1 DE 602006018598 T DE602006018598 T DE 602006018598T DE 602006018598 T DE602006018598 T DE 602006018598T DE 602006018598 D1 DE602006018598 D1 DE 602006018598D1
Authority
DE
Germany
Prior art keywords
pixel
source
pixel layout
storage integrated
follower mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006018598T
Other languages
English (en)
Inventor
Jeffrey A Mckee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Aptina Imaging Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aptina Imaging Corp filed Critical Aptina Imaging Corp
Publication of DE602006018598D1 publication Critical patent/DE602006018598D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
DE602006018598T 2005-05-11 2006-05-09 Pixel Layout mit Speicherkapazität integriert in Source-Folger MOSFET Verstärker Active DE602006018598D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/126,307 US7446357B2 (en) 2005-05-11 2005-05-11 Split trunk pixel layout
PCT/US2006/017811 WO2006124384A1 (en) 2005-05-11 2006-05-09 Split trunk pixel layout

Publications (1)

Publication Number Publication Date
DE602006018598D1 true DE602006018598D1 (de) 2011-01-13

Family

ID=36952596

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006018598T Active DE602006018598D1 (de) 2005-05-11 2006-05-09 Pixel Layout mit Speicherkapazität integriert in Source-Folger MOSFET Verstärker

Country Status (9)

Country Link
US (2) US7446357B2 (de)
EP (1) EP1883967B1 (de)
JP (1) JP2008541456A (de)
KR (1) KR20080009750A (de)
CN (1) CN101171689A (de)
AT (1) ATE490556T1 (de)
DE (1) DE602006018598D1 (de)
TW (1) TWI310986B (de)
WO (1) WO2006124384A1 (de)

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US7663167B2 (en) * 2004-12-23 2010-02-16 Aptina Imaging Corp. Split transfer gate for dark current suppression in an imager pixel
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KR100718781B1 (ko) * 2005-06-15 2007-05-16 매그나칩 반도체 유한회사 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서
US7511323B2 (en) * 2005-08-11 2009-03-31 Aptina Imaging Corporation Pixel cells in a honeycomb arrangement
JP4486015B2 (ja) * 2005-09-13 2010-06-23 パナソニック株式会社 固体撮像装置
JP4747781B2 (ja) * 2005-10-27 2011-08-17 船井電機株式会社 撮像装置
US7964929B2 (en) * 2007-08-23 2011-06-21 Aptina Imaging Corporation Method and apparatus providing imager pixels with shared pixel components
JP5292787B2 (ja) 2007-11-30 2013-09-18 ソニー株式会社 固体撮像装置及びカメラ
US8077236B2 (en) 2008-03-20 2011-12-13 Aptina Imaging Corporation Method and apparatus providing reduced metal routing in imagers
JP5751766B2 (ja) * 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
WO2014098932A1 (en) * 2012-12-17 2014-06-26 The Brigham And Women's Hosptial, Inc. Treatment of mtor hyperactive related diseases and disorders
KR102363433B1 (ko) 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서
JP2015130533A (ja) * 2015-03-31 2015-07-16 ソニー株式会社 固体撮像装置及びカメラ
US10566375B2 (en) 2016-01-29 2020-02-18 Semiconductor Components Industries, Llc Stacked-die image sensors with shielding
FR3062796B1 (fr) * 2017-02-10 2019-04-19 Azelead Utilisation d'un compose appartenant a la famillle des diuretiques pour traiter le cancer

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US6160281A (en) 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
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JP3658278B2 (ja) 2000-05-16 2005-06-08 キヤノン株式会社 固体撮像装置およびそれを用いた固体撮像システム
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Also Published As

Publication number Publication date
US7446357B2 (en) 2008-11-04
US20090045443A1 (en) 2009-02-19
EP1883967B1 (de) 2010-12-01
US20060267052A1 (en) 2006-11-30
ATE490556T1 (de) 2010-12-15
CN101171689A (zh) 2008-04-30
TWI310986B (en) 2009-06-11
JP2008541456A (ja) 2008-11-20
TW200707712A (en) 2007-02-16
US8130301B2 (en) 2012-03-06
WO2006124384A1 (en) 2006-11-23
KR20080009750A (ko) 2008-01-29
EP1883967A1 (de) 2008-02-06

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