DE60205389D1 - Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung - Google Patents

Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung

Info

Publication number
DE60205389D1
DE60205389D1 DE60205389T DE60205389T DE60205389D1 DE 60205389 D1 DE60205389 D1 DE 60205389D1 DE 60205389 T DE60205389 T DE 60205389T DE 60205389 T DE60205389 T DE 60205389T DE 60205389 D1 DE60205389 D1 DE 60205389D1
Authority
DE
Germany
Prior art keywords
recovering
pro
memory device
volatile memory
quenching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60205389T
Other languages
English (en)
Inventor
Emilio Camerlenghi
Giovanni Campardo
Tecla Ghilardi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60205389D1 publication Critical patent/DE60205389D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
DE60205389T 2002-11-28 2002-11-28 Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung Expired - Lifetime DE60205389D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02425727A EP1424700B1 (de) 2002-11-28 2002-11-28 Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung

Publications (1)

Publication Number Publication Date
DE60205389D1 true DE60205389D1 (de) 2005-09-08

Family

ID=32241381

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60205389T Expired - Lifetime DE60205389D1 (de) 2002-11-28 2002-11-28 Einzelzelllöschverfahren der Rückgewinnung von progammiergestörte Zellen in nichtflüchtige Speichervorrichtung

Country Status (3)

Country Link
US (1) US6944061B2 (de)
EP (1) EP1424700B1 (de)
DE (1) DE60205389D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7319615B1 (en) * 2006-08-02 2008-01-15 Spansion Llc Ramp gate erase for dual bit flash memory
US20080285368A1 (en) * 2007-05-17 2008-11-20 Macronix International Co., Ltd. Method for nrom array word line retry erasing and threshold voltage recovering

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
WO1996024138A1 (fr) * 1995-01-31 1996-08-08 Hitachi, Ltd. Dispositif de memoire remanente et procede de regeneration
TW368749B (en) * 1995-09-11 1999-09-01 Matsushita Electronics Corp Semiconductor memory device and driving method thereof
JP3189740B2 (ja) * 1997-06-20 2001-07-16 日本電気株式会社 不揮発性半導体メモリのデータ修復方法
DE69824386D1 (de) * 1998-01-22 2004-07-15 St Microelectronics Srl Verfahren für kontrolliertes Löschen von Speicheranordnungen, insbesondere Analog- oder Mehrwert-Flash-EEPROM Anordnungen
US6118705A (en) * 1998-03-13 2000-09-12 Atmel Corporation Page mode erase in a flash memory array
DE60015770T2 (de) * 1999-08-23 2005-12-08 Micron Technology, Inc. Flashspeicheranordnung mit extern ausgelöster erfassung und heilung von fehlerhaften zellen
US6178117B1 (en) * 2000-01-24 2001-01-23 Advanced Micro Devices, Inc. Background correction for charge gain and loss
US6620682B1 (en) * 2001-02-27 2003-09-16 Aplus Flash Technology, Inc. Set of three level concurrent word line bias conditions for a nor type flash memory array

Also Published As

Publication number Publication date
US20040233730A1 (en) 2004-11-25
EP1424700B1 (de) 2005-08-03
US6944061B2 (en) 2005-09-13
EP1424700A1 (de) 2004-06-02

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Legal Events

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