DE60211653D1 - Teildatenprogrammier- und leseoperationen in einem nichtflüchtigen speicher - Google Patents

Teildatenprogrammier- und leseoperationen in einem nichtflüchtigen speicher

Info

Publication number
DE60211653D1
DE60211653D1 DE60211653T DE60211653T DE60211653D1 DE 60211653 D1 DE60211653 D1 DE 60211653D1 DE 60211653 T DE60211653 T DE 60211653T DE 60211653 T DE60211653 T DE 60211653T DE 60211653 D1 DE60211653 D1 DE 60211653D1
Authority
DE
Germany
Prior art keywords
data
pages
block
programming
superceded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60211653T
Other languages
English (en)
Other versions
DE60211653T2 (de
Inventor
M Conley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25076410&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60211653(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60211653D1 publication Critical patent/DE60211653D1/de
Publication of DE60211653T2 publication Critical patent/DE60211653T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7209—Validity control, e.g. using flags, time stamps or sequence numbers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/16—Flash programming of all the cells in an array, sector or block simultaneously
DE60211653T 2001-01-19 2002-01-07 Teildatenprogrammier- und leseoperationen in einem nichtflüchtigen speicher Expired - Lifetime DE60211653T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US766436 2001-01-19
US09/766,436 US6763424B2 (en) 2001-01-19 2001-01-19 Partial block data programming and reading operations in a non-volatile memory
PCT/US2002/000366 WO2002058074A2 (en) 2001-01-19 2002-01-07 Partial block data programming and reading operations in a non-volatile memory

Publications (2)

Publication Number Publication Date
DE60211653D1 true DE60211653D1 (de) 2006-06-29
DE60211653T2 DE60211653T2 (de) 2007-04-12

Family

ID=25076410

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60211653T Expired - Lifetime DE60211653T2 (de) 2001-01-19 2002-01-07 Teildatenprogrammier- und leseoperationen in einem nichtflüchtigen speicher

Country Status (11)

Country Link
US (6) US6763424B2 (de)
EP (4) EP1645964A3 (de)
JP (3) JP4155824B2 (de)
KR (2) KR100944996B1 (de)
CN (3) CN1290021C (de)
AT (1) ATE327556T1 (de)
AU (1) AU2002236723A1 (de)
DE (1) DE60211653T2 (de)
ES (1) ES2262782T3 (de)
TW (1) TWI221217B (de)
WO (1) WO2002058074A2 (de)

Families Citing this family (452)

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US7970987B2 (en) 2011-06-28
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US20110258386A1 (en) 2011-10-20
US6763424B2 (en) 2004-07-13
US8316177B2 (en) 2012-11-20
KR20030070119A (ko) 2003-08-27
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US20090150601A1 (en) 2009-06-11
ATE327556T1 (de) 2006-06-15
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KR20090006217A (ko) 2009-01-14
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