DE60212366D1 - Reinigerzusammensetzung - Google Patents
ReinigerzusammensetzungInfo
- Publication number
- DE60212366D1 DE60212366D1 DE60212366T DE60212366T DE60212366D1 DE 60212366 D1 DE60212366 D1 DE 60212366D1 DE 60212366 T DE60212366 T DE 60212366T DE 60212366 T DE60212366 T DE 60212366T DE 60212366 D1 DE60212366 D1 DE 60212366D1
- Authority
- DE
- Germany
- Prior art keywords
- organic
- combination
- cleaner composition
- corrosion
- alkanolamine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229960005070 ascorbic acid Drugs 0.000 abstract 1
- 235000010323 ascorbic acid Nutrition 0.000 abstract 1
- 239000011668 ascorbic acid Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 150000004673 fluoride salts Chemical class 0.000 abstract 1
- 150000004679 hydroxides Chemical class 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 239000013212 metal-organic material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- -1 oxides Chemical class 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K8/00—Cosmetics or similar toiletry preparations
- A61K8/18—Cosmetics or similar toiletry preparations characterised by the composition
- A61K8/30—Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds
- A61K8/67—Vitamins
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61Q—SPECIFIC USE OF COSMETICS OR SIMILAR TOILETRY PREPARATIONS
- A61Q19/00—Preparations for care of the skin
- A61Q19/10—Washing or bathing preparations
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C11D2111/22—
-
- C11D2111/46—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US839475 | 1986-03-14 | ||
US09/839,475 US6627587B2 (en) | 2001-04-19 | 2001-04-19 | Cleaning compositions |
PCT/US2002/011739 WO2002086045A1 (en) | 2001-04-19 | 2002-04-12 | Cleaning compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60212366D1 true DE60212366D1 (de) | 2006-07-27 |
DE60212366T2 DE60212366T2 (de) | 2006-10-12 |
Family
ID=25279816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60212366T Expired - Fee Related DE60212366T2 (de) | 2001-04-19 | 2002-04-12 | Reinigerzusammensetzung |
Country Status (8)
Country | Link |
---|---|
US (2) | US6627587B2 (de) |
EP (1) | EP1381663B1 (de) |
JP (1) | JP2005507436A (de) |
KR (1) | KR20040022422A (de) |
CN (1) | CN1503838A (de) |
AT (1) | ATE329997T1 (de) |
DE (1) | DE60212366T2 (de) |
WO (1) | WO2002086045A1 (de) |
Families Citing this family (76)
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US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
US20030171239A1 (en) * | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
JP4252758B2 (ja) * | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
KR20050017142A (ko) * | 2003-08-08 | 2005-02-22 | 삼성전자주식회사 | 린스 용액 및 이를 이용한 반도체 소자 세정 방법 |
KR100651366B1 (ko) * | 2003-09-05 | 2006-11-28 | 삼성전기주식회사 | 세정력과 폴리이미드면 접착력을 지닌 브라운 옥사이드전처리제 조성물 및 브라운 옥사이드 공정을 통한폴리이미드면 접착력 향상 방법 |
CA2544209C (en) * | 2003-10-28 | 2011-10-18 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
US7276402B2 (en) | 2003-12-25 | 2007-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN1918698B (zh) * | 2004-02-09 | 2010-04-07 | 三菱化学株式会社 | 半导体装置用基板的洗涤液及洗涤方法 |
US7435712B2 (en) * | 2004-02-12 | 2008-10-14 | Air Liquide America, L.P. | Alkaline chemistry for post-CMP cleaning |
EP1609847B1 (de) * | 2004-06-25 | 2007-03-21 | JSR Corporation | Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
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KR20130091752A (ko) * | 2005-02-14 | 2013-08-19 | 로버트 제이 스몰 | 반도체 세정 방법 |
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KR101332501B1 (ko) | 2005-06-07 | 2013-11-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속 및 유전체 상용성 희생 반사 방지 코팅 세정 및 제거조성물 |
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CN104031771A (zh) * | 2014-06-17 | 2014-09-10 | 滁州斯迈特复合材料有限公司 | 胃镜清洁剂 |
TWI649454B (zh) * | 2017-11-10 | 2019-02-01 | 關東鑫林科技股份有限公司 | 蝕刻液組成物及使用該蝕刻液組成物之蝕刻方法 |
US10761423B2 (en) * | 2017-08-30 | 2020-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical composition for tri-layer removal |
JP6924690B2 (ja) * | 2017-12-21 | 2021-08-25 | 花王株式会社 | 樹脂マスク剥離洗浄方法 |
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US20230295499A1 (en) * | 2020-07-31 | 2023-09-21 | Tokuyama Corporation | Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid |
CN114318353B (zh) * | 2021-12-27 | 2023-12-05 | 广东红日星实业有限公司 | 一种除灰剂及其制备方法和应用 |
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-
2001
- 2001-04-19 US US09/839,475 patent/US6627587B2/en not_active Expired - Lifetime
-
2002
- 2002-04-12 CN CNA028084098A patent/CN1503838A/zh active Pending
- 2002-04-12 EP EP02723854A patent/EP1381663B1/de not_active Expired - Lifetime
- 2002-04-12 WO PCT/US2002/011739 patent/WO2002086045A1/en active IP Right Grant
- 2002-04-12 DE DE60212366T patent/DE60212366T2/de not_active Expired - Fee Related
- 2002-04-12 AT AT02723854T patent/ATE329997T1/de not_active IP Right Cessation
- 2002-04-12 KR KR10-2003-7013654A patent/KR20040022422A/ko not_active Application Discontinuation
- 2002-04-12 JP JP2002583561A patent/JP2005507436A/ja not_active Withdrawn
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2003
- 2003-04-16 US US10/414,898 patent/US6851432B2/en not_active Expired - Lifetime
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US6627587B2 (en) | 2003-09-30 |
JP2005507436A (ja) | 2005-03-17 |
CN1503838A (zh) | 2004-06-09 |
DE60212366T2 (de) | 2006-10-12 |
WO2002086045A1 (en) | 2002-10-31 |
EP1381663B1 (de) | 2006-06-14 |
US20030207777A1 (en) | 2003-11-06 |
KR20040022422A (ko) | 2004-03-12 |
EP1381663A1 (de) | 2004-01-21 |
US20030017962A1 (en) | 2003-01-23 |
ATE329997T1 (de) | 2006-07-15 |
US6851432B2 (en) | 2005-02-08 |
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