DE60216708D1 - Speicherzellestruktur - Google Patents

Speicherzellestruktur

Info

Publication number
DE60216708D1
DE60216708D1 DE60216708T DE60216708T DE60216708D1 DE 60216708 D1 DE60216708 D1 DE 60216708D1 DE 60216708 T DE60216708 T DE 60216708T DE 60216708 T DE60216708 T DE 60216708T DE 60216708 D1 DE60216708 D1 DE 60216708D1
Authority
DE
Germany
Prior art keywords
memory cell
cell structure
memory
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60216708T
Other languages
English (en)
Other versions
DE60216708T2 (de
Inventor
Peter Fricke
Brocklin Andrew L Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE60216708D1 publication Critical patent/DE60216708D1/de
Application granted granted Critical
Publication of DE60216708T2 publication Critical patent/DE60216708T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
DE60216708T 2001-10-31 2002-10-22 Speicherzellestruktur Expired - Lifetime DE60216708T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1740 2001-10-31
US10/001,740 US6549447B1 (en) 2001-10-31 2001-10-31 Memory cell structure

Publications (2)

Publication Number Publication Date
DE60216708D1 true DE60216708D1 (de) 2007-01-25
DE60216708T2 DE60216708T2 (de) 2007-10-11

Family

ID=21697602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60216708T Expired - Lifetime DE60216708T2 (de) 2001-10-31 2002-10-22 Speicherzellestruktur

Country Status (5)

Country Link
US (2) US6549447B1 (de)
EP (1) EP1308961B1 (de)
JP (1) JP2003188349A (de)
DE (1) DE60216708T2 (de)
HK (1) HK1051600A1 (de)

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US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
JP3948292B2 (ja) * 2002-02-01 2007-07-25 株式会社日立製作所 半導体記憶装置及びその製造方法
US6649505B2 (en) * 2002-02-04 2003-11-18 Matrix Semiconductor, Inc. Method for fabricating and identifying integrated circuits and self-identifying integrated circuits
US7038248B2 (en) * 2002-02-15 2006-05-02 Sandisk Corporation Diverse band gap energy level semiconductor device
JP2003249553A (ja) * 2002-02-26 2003-09-05 Fujitsu Ltd アンチヒューズ及びその書き込み方法
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6821848B2 (en) * 2002-04-02 2004-11-23 Hewlett-Packard Development Company, L.P. Tunnel-junction structures and methods
US6801450B2 (en) * 2002-05-22 2004-10-05 Hewlett-Packard Development Company, L.P. Memory cell isolation
US6952043B2 (en) 2002-06-27 2005-10-04 Matrix Semiconductor, Inc. Electrically isolated pillars in active devices
US6683365B1 (en) * 2002-08-01 2004-01-27 Micron Technology, Inc. Edge intensive antifuse device structure
US6850432B2 (en) * 2002-08-20 2005-02-01 Macronix International Co., Ltd. Laser programmable electrically readable phase-change memory method and device
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US20050158950A1 (en) * 2002-12-19 2005-07-21 Matrix Semiconductor, Inc. Non-volatile memory cell comprising a dielectric layer and a phase change material in series
JP2006511965A (ja) 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7767499B2 (en) * 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
DE10310573A1 (de) * 2003-03-11 2004-09-30 Infineon Technologies Ag Nicht-flüchtige, integrierte Speicherzelle und Verfahren zum Einschreiben oder Auslesen einer Information in die / aus der Speicherzelle
US7706167B2 (en) * 2003-03-18 2010-04-27 Kabushiki Kaisha Toshiba Resistance change memory device
US7755934B2 (en) * 2003-03-18 2010-07-13 Kabushiki Kaisha Toshiba Resistance change memory device
US7719875B2 (en) * 2003-03-18 2010-05-18 Kabushiki Kaisha Toshiba Resistance change memory device
CN1764982B (zh) * 2003-03-18 2011-03-23 株式会社东芝 相变存储器装置及其制造方法
JP4545397B2 (ja) * 2003-06-19 2010-09-15 株式会社 日立ディスプレイズ 画像表示装置
US7529123B2 (en) * 2003-09-08 2009-05-05 Ovonyx, Inc. Method of operating a multi-terminal electronic device
JPWO2005041303A1 (ja) * 2003-10-23 2007-04-26 松下電器産業株式会社 抵抗変化素子、その製造方法、その素子を含むメモリ、およびそのメモリの駆動方法
US7816722B2 (en) * 2004-02-04 2010-10-19 Hewlett-Packard Development Company, L.P. Memory array
US20050275106A1 (en) * 2004-06-14 2005-12-15 Fricke Peter J Electronic isolation device
US20060035474A1 (en) * 2004-08-10 2006-02-16 Pavel Komilovich Increasing retention time for memory devices
US7106096B2 (en) * 2004-11-11 2006-09-12 International Business Machines Corporation Circuit and method of controlling integrated circuit power consumption using phase change switches
KR100682908B1 (ko) * 2004-12-21 2007-02-15 삼성전자주식회사 두개의 저항체를 지닌 비휘발성 메모리 소자
WO2006080550A1 (en) * 2005-01-31 2006-08-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8604547B2 (en) * 2005-02-10 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
US7517796B2 (en) * 2005-02-17 2009-04-14 Sandisk 3D Llc Method for patterning submicron pillars
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7453755B2 (en) * 2005-07-01 2008-11-18 Sandisk 3D Llc Memory cell with high-K antifuse for reverse bias programming
US7816659B2 (en) * 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
JP4847743B2 (ja) * 2005-11-28 2011-12-28 エルピーダメモリ株式会社 不揮発性メモリ素子
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
TWI462099B (zh) * 2006-03-31 2014-11-21 Sandisk 3D Llc 非揮發性記憶體單元、整體三維記憶體陣列及用於程式化所述記憶體陣列之方法
KR100782482B1 (ko) * 2006-05-19 2007-12-05 삼성전자주식회사 ＧｅＢｉＴｅ막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법
US7575984B2 (en) * 2006-05-31 2009-08-18 Sandisk 3D Llc Conductive hard mask to protect patterned features during trench etch
US7586773B2 (en) * 2007-03-27 2009-09-08 Sandisk 3D Llc Large array of upward pointing p-i-n diodes having large and uniform current
US7593254B2 (en) 2007-05-25 2009-09-22 Micron Technology, Inc. Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8233308B2 (en) * 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7902537B2 (en) * 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US20090086521A1 (en) * 2007-09-28 2009-04-02 Herner S Brad Multiple antifuse memory cells and methods to form, program, and sense the same
US20090094566A1 (en) * 2007-10-09 2009-04-09 International Business Machines Corporation Design structure for chip identification system
US8291357B2 (en) * 2007-10-09 2012-10-16 International Business Machines Corporation On-chip identification circuit incorporating pairs of conductors, each having an essentially random chance of being shorted together as a result of process variations
JP5268376B2 (ja) * 2008-01-29 2013-08-21 株式会社日立製作所 不揮発性記憶装置およびその製造方法
US8022503B2 (en) * 2008-06-03 2011-09-20 United Microelectronics Corp. Anti-fusse structure and method of fabricating the same
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
US8659001B2 (en) 2011-09-01 2014-02-25 Sandisk 3D Llc Defect gradient to boost nonvolatile memory performance
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Also Published As

Publication number Publication date
EP1308961A3 (de) 2004-08-25
EP1308961A2 (de) 2003-05-07
EP1308961B1 (de) 2006-12-13
US6707698B2 (en) 2004-03-16
US20030081446A1 (en) 2003-05-01
US6549447B1 (en) 2003-04-15
JP2003188349A (ja) 2003-07-04
US20030161175A1 (en) 2003-08-28
DE60216708T2 (de) 2007-10-11
HK1051600A1 (en) 2003-08-08

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, US

8328 Change in the person/name/address of the agent

Representative=s name: SCHOPPE, ZIMMERMANN, STOECKELER & ZINKLER, 82049 P

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., , TW