DE60224379D1 - Methode, eine dielektrische Schicht abzuscheiden - Google Patents

Methode, eine dielektrische Schicht abzuscheiden

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Publication number
DE60224379D1
DE60224379D1 DE60224379T DE60224379T DE60224379D1 DE 60224379 D1 DE60224379 D1 DE 60224379D1 DE 60224379 T DE60224379 T DE 60224379T DE 60224379 T DE60224379 T DE 60224379T DE 60224379 D1 DE60224379 D1 DE 60224379D1
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Germany
Prior art keywords
deposit
dielectric layer
dielectric
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60224379T
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English (en)
Other versions
DE60224379T2 (de
Inventor
Jung-Hyun Lee
Young-Jin Cho
Yo-Sep Min
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE60224379D1 publication Critical patent/DE60224379D1/de
Application granted granted Critical
Publication of DE60224379T2 publication Critical patent/DE60224379T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
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    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
DE60224379T 2002-07-20 2002-11-14 Methode, eine dielektrische Schicht abzuscheiden Expired - Lifetime DE60224379T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0042763A KR100468852B1 (ko) 2002-07-20 2002-07-20 캐패시터 구조체 형성 방법
KR2002042763 2002-07-20

Publications (2)

Publication Number Publication Date
DE60224379D1 true DE60224379D1 (de) 2008-02-14
DE60224379T2 DE60224379T2 (de) 2008-12-11

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DE60224379T Expired - Lifetime DE60224379T2 (de) 2002-07-20 2002-11-14 Methode, eine dielektrische Schicht abzuscheiden

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EP1383162B1 (de) 2008-01-02
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JP4596756B2 (ja) 2010-12-15
CN100356518C (zh) 2007-12-19
CN1469439A (zh) 2004-01-21
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