DE60230462D1 - Akustischer Volumenwellenresonator mit einem leitenden akustischen Spiegel - Google Patents
Akustischer Volumenwellenresonator mit einem leitenden akustischen SpiegelInfo
- Publication number
- DE60230462D1 DE60230462D1 DE60230462T DE60230462T DE60230462D1 DE 60230462 D1 DE60230462 D1 DE 60230462D1 DE 60230462 T DE60230462 T DE 60230462T DE 60230462 T DE60230462 T DE 60230462T DE 60230462 D1 DE60230462 D1 DE 60230462D1
- Authority
- DE
- Germany
- Prior art keywords
- resonator
- isolation structure
- substrate
- acoustic
- resonator section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002955 isolation Methods 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/761,171 US6509813B2 (en) | 2001-01-16 | 2001-01-16 | Bulk acoustic wave resonator with a conductive mirror |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60230462D1 true DE60230462D1 (de) | 2009-02-05 |
Family
ID=25061382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60230462T Expired - Lifetime DE60230462D1 (de) | 2001-01-16 | 2002-01-15 | Akustischer Volumenwellenresonator mit einem leitenden akustischen Spiegel |
Country Status (5)
Country | Link |
---|---|
US (1) | US6509813B2 (de) |
EP (1) | EP1227581B1 (de) |
JP (1) | JP4248180B2 (de) |
AT (1) | ATE418813T1 (de) |
DE (1) | DE60230462D1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6778038B2 (en) * | 2001-10-05 | 2004-08-17 | Tdk Corporation | Piezoelectric resonant filter, duplexer, and method of manufacturing same |
DE10200741A1 (de) * | 2002-01-11 | 2003-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie |
US20100107389A1 (en) * | 2002-01-11 | 2010-05-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of fabricating an electrode for a bulk acoustic resonator |
US7989851B2 (en) * | 2002-06-06 | 2011-08-02 | Rutgers, The State University Of New Jersey | Multifunctional biosensor based on ZnO nanostructures |
DE10225202B4 (de) * | 2002-06-06 | 2017-06-01 | Epcos Ag | Mit akustischen Wellen arbeitendes Bauelement mit einem Anpassnetzwerk |
US8377683B2 (en) | 2002-06-06 | 2013-02-19 | Rutgers, The State University Of New Jersey | Zinc oxide-based nanostructure modified QCM for dynamic monitoring of cell adhesion and proliferation |
JP2004120016A (ja) * | 2002-09-20 | 2004-04-15 | Fujitsu Media Device Kk | フィルタ装置 |
JP4128836B2 (ja) * | 2002-09-27 | 2008-07-30 | Tdk株式会社 | 薄膜圧電共振子、それを用いたフィルタ及びデュプレクサ |
FR2848036B1 (fr) * | 2002-11-28 | 2005-08-26 | St Microelectronics Sa | Support pour resonateur acoustique, resonateur acoustique et circuit integre correspondant |
KR100517841B1 (ko) * | 2003-02-22 | 2005-09-30 | 주식회사 엠에스솔루션 | 체적탄성파 공진기 밴드 패스 필터, 이를 포함하는듀플렉서 및 그 제조 방법 |
EP1469599B1 (de) * | 2003-04-18 | 2010-11-03 | Samsung Electronics Co., Ltd. | Dünnschicht-Resonator von Luftspaltbauart, Duplexer mit dem Resonator und deren Herstellungsverfahren |
DE10331322A1 (de) * | 2003-07-10 | 2005-02-03 | Epcos Ag | Elektronisches Bauelement und Verfahren zur Herstellung |
KR100616511B1 (ko) * | 2003-09-24 | 2006-08-29 | 삼성전기주식회사 | Fbar 소자 및 그 제조 방법 |
KR100519816B1 (ko) * | 2003-09-29 | 2005-10-10 | 삼성전기주식회사 | Fbar 듀플렉서 소자 및 그 제조 방법 |
KR100555762B1 (ko) * | 2003-10-07 | 2006-03-03 | 삼성전자주식회사 | 에어갭형 박막 벌크 음향 공진기 및 그 제조방법, 이를이용한 필터 및 듀플렉서 |
JP2005129610A (ja) * | 2003-10-22 | 2005-05-19 | Tdk Corp | 電子部品 |
JP2005136683A (ja) * | 2003-10-30 | 2005-05-26 | Tdk Corp | 電子部品 |
JP2005167969A (ja) * | 2003-11-14 | 2005-06-23 | Fujitsu Media Device Kk | 弾性波素子および弾性波素子の製造方法 |
JP2005151287A (ja) * | 2003-11-18 | 2005-06-09 | Tdk Corp | 電子部品 |
FR2863789B1 (fr) * | 2003-12-12 | 2006-09-29 | St Microelectronics Sa | Dispositif de resonateur acoustique |
US6992400B2 (en) * | 2004-01-30 | 2006-01-31 | Nokia Corporation | Encapsulated electronics device with improved heat dissipation |
US7227433B2 (en) * | 2004-03-31 | 2007-06-05 | Intel Corporation | Electro mechanical device having a sealed cavity |
JP4375399B2 (ja) * | 2004-07-20 | 2009-12-02 | 株式会社村田製作所 | 圧電フィルタ |
JP4693397B2 (ja) * | 2004-11-26 | 2011-06-01 | 京セラ株式会社 | 薄膜バルク音響波共振子およびフィルタならびに通信装置 |
JP4016983B2 (ja) | 2004-12-07 | 2007-12-05 | 株式会社村田製作所 | 圧電薄膜共振子およびその製造方法 |
JP2006191304A (ja) * | 2005-01-05 | 2006-07-20 | Matsushita Electric Ind Co Ltd | 圧電共振器及びその製造方法 |
DE102005004435B4 (de) * | 2005-01-31 | 2006-10-19 | Infineon Technologies Ag | Baw-resonator |
DE102005006833B4 (de) * | 2005-02-15 | 2017-02-23 | Epcos Ag | Verfahren zur Herstellung eines BAW-Bauelements und BAW-Bauelement |
FR2890490A1 (fr) * | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
DE102005044330A1 (de) * | 2005-09-16 | 2007-03-29 | Epcos Ag | Abstimmbarer Kondensator und Schaltung mit einem solchen Kondensator |
JP5096695B2 (ja) * | 2006-05-30 | 2012-12-12 | パナソニック株式会社 | 薄膜音響共振器 |
US8212331B1 (en) * | 2006-10-02 | 2012-07-03 | Newport Fab, Llc | Method for fabricating a backside through-wafer via in a processed wafer and related structure |
US7851333B2 (en) * | 2007-03-15 | 2010-12-14 | Infineon Technologies Ag | Apparatus comprising a device and method for producing it |
WO2009051631A1 (en) * | 2007-10-18 | 2009-04-23 | Skyworks Solutions, Inc. | Baw structure with reduced topographic steps and related method |
US8476809B2 (en) | 2008-04-29 | 2013-07-02 | Sand 9, Inc. | Microelectromechanical systems (MEMS) resonators and related apparatus and methods |
US8410868B2 (en) * | 2009-06-04 | 2013-04-02 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
US9048811B2 (en) | 2009-03-31 | 2015-06-02 | Sand 9, Inc. | Integration of piezoelectric materials with substrates |
DE102009018879B4 (de) * | 2009-04-24 | 2016-03-17 | Epcos Ag | Bodenelektrode für Bulk Acoustic Wave (BAW) Resonator |
US20110121916A1 (en) * | 2009-11-24 | 2011-05-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Hybrid bulk acoustic wave resonator |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
US9246467B2 (en) | 2012-05-31 | 2016-01-26 | Texas Instruments Incorporated | Integrated resonator with a mass bias |
KR101959204B1 (ko) * | 2013-01-09 | 2019-07-04 | 삼성전자주식회사 | 무선 주파수 필터 및 무선 주파수 필터의 제조방법 |
US10658998B2 (en) | 2013-07-31 | 2020-05-19 | Oepic Semiconductors, Inc. | Piezoelectric film transfer for acoustic resonators and filters |
KR101923573B1 (ko) * | 2015-03-16 | 2018-11-29 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치 및 그 제조 방법 |
US20160329481A1 (en) * | 2015-05-04 | 2016-11-10 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator and filter including the same |
US10135415B2 (en) * | 2015-12-18 | 2018-11-20 | Texas Instruments Incorporated | Method to reduce frequency distribution of bulk acoustic wave resonators during manufacturing |
DE102016124236B4 (de) * | 2016-12-13 | 2018-07-26 | Snaptrack, Inc. | BAW-Resonator |
CN110231407B (zh) * | 2018-03-06 | 2022-02-15 | 中国石油化工股份有限公司 | 一种判断碳酸盐岩盖层有效性的方法 |
US10985729B2 (en) * | 2018-12-28 | 2021-04-20 | Texas Instruments Incorporated | BAW resonator based pressure sensor |
WO2021021745A1 (en) | 2019-07-31 | 2021-02-04 | QXONIX Inc. | Acoustic device structures, filters and systems |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT353506B (de) * | 1976-10-19 | 1979-11-26 | List Hans | Piezoelektrischer resonator |
US5373268A (en) * | 1993-02-01 | 1994-12-13 | Motorola, Inc. | Thin film resonator having stacked acoustic reflecting impedance matching layers and method |
US5864261A (en) * | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
US5714917A (en) | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
US5873154A (en) | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
US6087198A (en) * | 1998-02-12 | 2000-07-11 | Texas Instruments Incorporated | Low cost packaging for thin-film resonators and thin-film resonator-based filters |
US5872493A (en) * | 1997-03-13 | 1999-02-16 | Nokia Mobile Phones, Ltd. | Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror |
US5910756A (en) | 1997-05-21 | 1999-06-08 | Nokia Mobile Phones Limited | Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators |
FI108583B (fi) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
US6060818A (en) | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
-
2001
- 2001-01-16 US US09/761,171 patent/US6509813B2/en not_active Expired - Fee Related
-
2002
- 2002-01-15 JP JP2002006608A patent/JP4248180B2/ja not_active Expired - Fee Related
- 2002-01-15 DE DE60230462T patent/DE60230462D1/de not_active Expired - Lifetime
- 2002-01-15 EP EP02250263A patent/EP1227581B1/de not_active Expired - Lifetime
- 2002-01-15 AT AT02250263T patent/ATE418813T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP4248180B2 (ja) | 2009-04-02 |
US20020093398A1 (en) | 2002-07-18 |
EP1227581A3 (de) | 2004-12-15 |
ATE418813T1 (de) | 2009-01-15 |
EP1227581A2 (de) | 2002-07-31 |
JP2002278558A (ja) | 2002-09-27 |
US6509813B2 (en) | 2003-01-21 |
EP1227581B1 (de) | 2008-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |