DE60233486D1 - Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet - Google Patents
Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendetInfo
- Publication number
- DE60233486D1 DE60233486D1 DE60233486T DE60233486T DE60233486D1 DE 60233486 D1 DE60233486 D1 DE 60233486D1 DE 60233486 T DE60233486 T DE 60233486T DE 60233486 T DE60233486 T DE 60233486T DE 60233486 D1 DE60233486 D1 DE 60233486D1
- Authority
- DE
- Germany
- Prior art keywords
- floating gate
- molecular material
- gate memory
- building part
- compound molecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/13—Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28909101P | 2001-05-07 | 2001-05-07 | |
| PCT/US2002/014237 WO2002091476A1 (en) | 2001-05-07 | 2002-05-07 | Floating gate memory device using composite molecular material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE60233486D1 true DE60233486D1 (de) | 2009-10-08 |
Family
ID=23110014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60233486T Expired - Lifetime DE60233486D1 (de) | 2001-05-07 | 2002-05-07 | Floating-gate-speicherbaustein, der zusammengesetztes molekularmaterial verwendet |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6627944B2 (de) |
| EP (1) | EP1390984B1 (de) |
| JP (1) | JP4514016B2 (de) |
| KR (1) | KR100885276B1 (de) |
| CN (1) | CN1276518C (de) |
| DE (1) | DE60233486D1 (de) |
| WO (1) | WO2002091476A1 (de) |
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| JP4731794B2 (ja) | 2001-05-07 | 2011-07-27 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法 |
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| EP1434232B1 (de) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Speicherzelle |
| US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
| US6858481B2 (en) * | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
| US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
| US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
| DE10212926A1 (de) * | 2002-03-22 | 2003-10-16 | Infineon Technologies Ag | Halbleiterspeicherzelle und Halbleiterspeichereinrichtung |
| US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
| US6922350B2 (en) * | 2002-09-27 | 2005-07-26 | Intel Corporation | Reducing the effect of write disturbs in polymer memories |
| US7049153B2 (en) * | 2003-04-23 | 2006-05-23 | Micron Technology, Inc. | Polymer-based ferroelectric memory |
| US6916696B1 (en) | 2003-11-20 | 2005-07-12 | Advanced Micro Devices, Inc. | Method for manufacturing a memory element |
| US20050212022A1 (en) * | 2004-03-24 | 2005-09-29 | Greer Edward C | Memory cell having an electric field programmable storage element, and method of operating same |
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| US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
| KR100890212B1 (ko) * | 2007-11-23 | 2009-03-25 | 고려대학교 산학협력단 | 비휘발성 메모리 소자 및 그 제조 방법 |
| TWI466271B (zh) * | 2010-07-05 | 2014-12-21 | Macronix Int Co Ltd | 具有可調整閘極電阻值之電晶體及具有可調整閘極電阻值之電晶體之半導體元件 |
| CN102339846B (zh) * | 2010-07-19 | 2015-10-07 | 旺宏电子股份有限公司 | 具有可调整栅极电阻值的晶体管的半导体存储器元件 |
| US8675381B2 (en) | 2010-07-20 | 2014-03-18 | Macronix International Co., Ltd. | Transistor having an adjustable gate resistance and semiconductor device comprising the same |
| KR101463782B1 (ko) * | 2011-04-06 | 2014-11-21 | 고려대학교 산학협력단 | 문턱전압 스위칭 물질을 이용한 비휘발성 메모리 소자 및 그 제조 방법 |
| US9767407B2 (en) | 2015-09-18 | 2017-09-19 | Samsung Electronics Co., Ltd. | Weighting device, neural network, and operating method of the weighting device |
| WO2018009175A1 (en) * | 2016-07-06 | 2018-01-11 | Intel Corporation | High speed single transistor non-volatile memory cell |
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| US20050101063A1 (en) | 2000-10-24 | 2005-05-12 | Tour James M. | Three-terminal field-controlled molecular devices |
| AU2001265068A1 (en) | 2000-10-31 | 2002-05-15 | The Regents Of The University Of California | Organic bistable device and organic memory cells |
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| JP4667594B2 (ja) | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| JP2002230982A (ja) | 2001-02-01 | 2002-08-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
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-
2002
- 2002-05-07 CN CNB02812491XA patent/CN1276518C/zh not_active Expired - Fee Related
- 2002-05-07 JP JP2002588633A patent/JP4514016B2/ja not_active Expired - Fee Related
- 2002-05-07 EP EP02769351A patent/EP1390984B1/de not_active Expired - Lifetime
- 2002-05-07 US US10/139,331 patent/US6627944B2/en not_active Expired - Lifetime
- 2002-05-07 DE DE60233486T patent/DE60233486D1/de not_active Expired - Lifetime
- 2002-05-07 KR KR1020037014467A patent/KR100885276B1/ko not_active IP Right Cessation
- 2002-05-07 WO PCT/US2002/014237 patent/WO2002091476A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN1518775A (zh) | 2004-08-04 |
| JP2005501398A (ja) | 2005-01-13 |
| JP4514016B2 (ja) | 2010-07-28 |
| EP1390984A1 (de) | 2004-02-25 |
| KR20030092132A (ko) | 2003-12-03 |
| EP1390984B1 (de) | 2009-08-26 |
| WO2002091476A1 (en) | 2002-11-14 |
| KR100885276B1 (ko) | 2009-02-23 |
| CN1276518C (zh) | 2006-09-20 |
| US20020163030A1 (en) | 2002-11-07 |
| US6627944B2 (en) | 2003-09-30 |
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