DE60239445D1 - Halbleiterlaserstruktur - Google Patents

Halbleiterlaserstruktur

Info

Publication number
DE60239445D1
DE60239445D1 DE60239445T DE60239445T DE60239445D1 DE 60239445 D1 DE60239445 D1 DE 60239445D1 DE 60239445 T DE60239445 T DE 60239445T DE 60239445 T DE60239445 T DE 60239445T DE 60239445 D1 DE60239445 D1 DE 60239445D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser structure
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239445T
Other languages
English (en)
Inventor
Michael A Kneissl
Peter Kiesel
De Walle Christian G Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE60239445D1 publication Critical patent/DE60239445D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60239445T 2001-12-21 2002-12-17 Halbleiterlaserstruktur Expired - Lifetime DE60239445D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/024,417 US6724013B2 (en) 2001-12-21 2001-12-21 Edge-emitting nitride-based laser diode with p-n tunnel junction current injection

Publications (1)

Publication Number Publication Date
DE60239445D1 true DE60239445D1 (de) 2011-04-28

Family

ID=21820485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239445T Expired - Lifetime DE60239445D1 (de) 2001-12-21 2002-12-17 Halbleiterlaserstruktur

Country Status (5)

Country Link
US (1) US6724013B2 (de)
EP (1) EP1328050B1 (de)
JP (3) JP2003198045A (de)
BR (1) BR0207606B1 (de)
DE (1) DE60239445D1 (de)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
JP2004014725A (ja) * 2002-06-06 2004-01-15 Toyoda Gosei Co Ltd 半導体発光素子
KR100568701B1 (ko) * 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 반도체 발광 소자
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US6869812B1 (en) 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
US7123638B2 (en) * 2003-10-17 2006-10-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
JP2005203520A (ja) * 2004-01-14 2005-07-28 Sumitomo Electric Ind Ltd 半導体発光素子
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
WO2005086243A1 (en) * 2004-03-08 2005-09-15 Showa Denko K.K. Pn junction type croup iii nitride semiconductor light-emitting device
KR100568300B1 (ko) 2004-03-31 2006-04-05 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
WO2005122289A1 (en) * 2004-06-09 2005-12-22 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
KR100765004B1 (ko) * 2004-12-23 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
WO2006100975A1 (ja) * 2005-03-23 2006-09-28 Nec Corporation トンネル接合発光素子
US20070029541A1 (en) * 2005-08-04 2007-02-08 Huoping Xin High efficiency light emitting device
US7388233B2 (en) * 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US7348603B2 (en) * 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
US7622746B1 (en) 2006-03-17 2009-11-24 Bridgelux, Inc. Highly reflective mounting arrangement for LEDs
WO2007136097A1 (ja) * 2006-05-23 2007-11-29 Meijo University 半導体発光素子
JP2008130877A (ja) * 2006-11-22 2008-06-05 Sharp Corp 窒化物半導体発光素子の製造方法
US7612362B2 (en) 2006-11-22 2009-11-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
JP5151139B2 (ja) * 2006-12-19 2013-02-27 住友電気工業株式会社 半導体発光素子
JP2008198957A (ja) * 2007-02-16 2008-08-28 Hitachi Ltd 半導体レーザ装置および光増幅装置
JP2008226906A (ja) * 2007-03-08 2008-09-25 Sharp Corp 窒化物半導体発光素子
JP2009059918A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd 光半導体デバイス
JP5012370B2 (ja) * 2007-09-27 2012-08-29 住友電気工業株式会社 半導体レーザ素子
JP5322453B2 (ja) * 2008-02-07 2013-10-23 キヤノン株式会社 ３次元フォトニック結晶発光素子
US7856040B2 (en) * 2008-09-24 2010-12-21 Palo Alto Research Center Incorporated Semiconductor light emitting devices with non-epitaxial upper cladding
JP2012507874A (ja) * 2008-10-31 2012-03-29 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性または半極性ＡｌＩｎＮおよびＡｌＩｎＧａＮ合金に基づく光電子デバイス
US8529698B2 (en) * 2008-11-11 2013-09-10 Arizona Board Of Regents For And On Behalf Of Arizona State University Ingan columnar nano-heterostructures for solar cells
JP5093063B2 (ja) * 2008-11-11 2012-12-05 住友電気工業株式会社 集積化半導体光素子及び半導体光装置
DE102009015314B4 (de) 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
JP5310271B2 (ja) * 2009-05-29 2013-10-09 住友電気工業株式会社 半導体レーザ素子
DE102009054564A1 (de) * 2009-12-11 2011-06-16 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
US20110188528A1 (en) * 2010-02-04 2011-08-04 Ostendo Technologies, Inc. High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
DE102010002966B4 (de) 2010-03-17 2020-07-30 Osram Opto Semiconductors Gmbh Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung
US8897329B2 (en) 2010-09-20 2014-11-25 Corning Incorporated Group III nitride-based green-laser diodes and waveguide structures thereof
JP5420515B2 (ja) * 2010-10-21 2014-02-19 シャープ株式会社 窒化物半導体発光素子
US8748919B2 (en) 2011-04-28 2014-06-10 Palo Alto Research Center Incorporated Ultraviolet light emitting device incorporating optically absorbing layers
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
DE102012111512B4 (de) * 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstreifenlaser
KR20140131412A (ko) * 2013-05-02 2014-11-13 삼성디스플레이 주식회사 유기 발광 표시 장치의 주입 에너지 측정 방법
US10324037B2 (en) * 2013-11-13 2019-06-18 Gustav Hudson Low energy laser spectroscopy LELS
DE102014111058A1 (de) * 2014-08-04 2016-02-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
CN104682195A (zh) * 2015-02-13 2015-06-03 北京牡丹视源电子有限责任公司 一种具有隧道结结构的边发射半导体激光器及其制备方法
DE102015106722A1 (de) * 2015-04-30 2016-11-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Tunnelkontakt
WO2017011387A1 (en) 2015-07-10 2017-01-19 The Regents Of The University Of California Hybrid growth method for iii-nitride tunnel junction devices
CN105977349B (zh) * 2016-05-17 2018-05-04 东南大学 一种具有p-i-n隧道结的多有源区发光二极管
US11025031B2 (en) 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
US11211525B2 (en) 2017-05-01 2021-12-28 Ohio State Innovation Foundation Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency
US10454250B2 (en) * 2017-05-22 2019-10-22 Lasertel Inc. Thermal contact for semiconductors and related methods
CN108988124B (zh) * 2017-05-31 2020-05-19 中国科学院半导体研究所 一种用于微波振荡源的单片集成隧道结激光器
US10397027B2 (en) 2017-09-26 2019-08-27 International Business Machines Corporation Continuous time linear equalizer
US10355453B2 (en) 2017-11-08 2019-07-16 International Business Machines Corporation Electro-optical device with lateral electron blocking layer
JP7169613B2 (ja) * 2017-11-10 2022-11-11 学校法人 名城大学 窒化物半導体発光素子の製造方法
JP7101470B2 (ja) * 2017-12-05 2022-07-15 日機装株式会社 窒化物半導体発光素子
DE102018105208B4 (de) * 2018-03-07 2022-05-19 Otto-Von-Guericke-Universität Magdeburg Halbleiterschichtenfolge und ein darauf basierendes Halbleiterbauelement
FR3082053B1 (fr) * 2018-05-29 2020-09-11 Commissariat Energie Atomique Procede de fabrication d’une diode electroluminescente de type gan
US11764327B2 (en) * 2018-06-13 2023-09-19 King Abdullah University Of Science And Technology Light emitting diode with a graded quantum barrier layer
US11406004B2 (en) 2018-08-13 2022-08-02 Leonardo Electronics Us Inc. Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver
DE102019121924A1 (de) 2018-08-14 2020-02-20 Lasertel, Inc. Laserbaugruppe und zugehörige verfahren
US11228160B2 (en) * 2018-11-15 2022-01-18 Sharp Kabushiki Kaisha AlGaInPAs-based semiconductor laser device and method for producing same
US11296481B2 (en) 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
US20220294189A1 (en) * 2019-04-04 2022-09-15 Cornell University Monolithically inverted iii-v laser diode realized using buried tunnel junction
US11752571B1 (en) 2019-06-07 2023-09-12 Leonardo Electronics Us Inc. Coherent beam coupler
JP7302814B2 (ja) * 2019-06-26 2023-07-04 ウシオ電機株式会社 半導体発光素子
EP3767762B1 (de) * 2019-07-14 2022-03-30 Instytut Wysokich Cisnien Polskiej Akademii Nauk Laserdiode mit verteilter rückkopplung und deren herstellungsverfahren
US11909172B2 (en) * 2020-01-08 2024-02-20 Asahi Kasei Kabushiki Kaisha Method for manufacturing optical device and optical device
CN111613705A (zh) * 2020-04-17 2020-09-01 南京航空航天大学 低维高亮绿光发射InGaN基异质结二极管及其制备方法
US20210366703A1 (en) * 2020-05-20 2021-11-25 Asahi Kasei Kabushiki Kaisha Nitride semiconductor element

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166761A (en) 1991-04-01 1992-11-24 Midwest Research Institute Tunnel junction multiple wavelength light-emitting diodes
JPH0621572A (ja) * 1992-07-02 1994-01-28 Nec Corp 半導体レーザ
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
JP2783210B2 (ja) * 1995-09-04 1998-08-06 日本電気株式会社 面発光型ダイオード
JPH0974243A (ja) * 1995-09-04 1997-03-18 Mitsubishi Electric Corp 半導体レーザ
JP3464853B2 (ja) * 1995-09-06 2003-11-10 株式会社東芝 半導体レーザ
US5959307A (en) * 1995-11-06 1999-09-28 Nichia Chemical Industries Ltd. Nitride semiconductor device
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
JPH10150219A (ja) * 1996-11-15 1998-06-02 Toyoda Gosei Co Ltd ３族窒化物半導体レーザ素子
CA2276335C (en) * 1997-01-09 2006-04-11 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3713118B2 (ja) * 1997-03-04 2005-11-02 ローム株式会社 半導体発光素子の製法
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
US6233267B1 (en) * 1998-01-21 2001-05-15 Brown University Research Foundation Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
US6233265B1 (en) * 1998-07-31 2001-05-15 Xerox Corporation AlGaInN LED and laser diode structures for pure blue or green emission
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
US6389051B1 (en) * 1999-04-09 2002-05-14 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
JP4850324B2 (ja) * 1999-07-16 2012-01-11 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド 窒化物半導体素子および窒化物半導体レーザ素子
JP4024431B2 (ja) * 1999-07-23 2007-12-19 株式会社東芝 双方向半導体発光素子及び光伝送装置
US6567443B2 (en) * 1999-09-29 2003-05-20 Xerox Corporation Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes
US6526082B1 (en) * 2000-06-02 2003-02-25 Lumileds Lighting U.S., Llc P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
KR100384598B1 (ko) * 2000-11-29 2003-05-22 주식회사 옵토웰 질화물반도체 수직공진 표면발광 레이저
US6526083B1 (en) * 2001-10-09 2003-02-25 Xerox Corporation Two section blue laser diode with reduced output power droop

Also Published As

Publication number Publication date
US20030116767A1 (en) 2003-06-26
JP2014207476A (ja) 2014-10-30
JP2010251804A (ja) 2010-11-04
US6724013B2 (en) 2004-04-20
BR0207606A (pt) 2003-12-02
EP1328050A3 (de) 2005-01-05
BR0207606B1 (pt) 2013-07-09
EP1328050A2 (de) 2003-07-16
JP2003198045A (ja) 2003-07-11
EP1328050B1 (de) 2011-03-16

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