DE60301582D1 - Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung - Google Patents

Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung

Info

Publication number
DE60301582D1
DE60301582D1 DE60301582T DE60301582T DE60301582D1 DE 60301582 D1 DE60301582 D1 DE 60301582D1 DE 60301582 T DE60301582 T DE 60301582T DE 60301582 T DE60301582 T DE 60301582T DE 60301582 D1 DE60301582 D1 DE 60301582D1
Authority
DE
Germany
Prior art keywords
storage device
manufacturing
carbon nanotube
nanotube storage
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60301582T
Other languages
English (en)
Other versions
DE60301582T2 (de
Inventor
Won-Bong Choi
In-Kyeong Yoo
Jae-Uk Chu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2002-0071398A external-priority patent/KR100450825B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60301582D1 publication Critical patent/DE60301582D1/de
Publication of DE60301582T2 publication Critical patent/DE60301582T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
DE60301582T 2002-02-09 2003-02-07 Speicheranordnung mit Kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung Expired - Lifetime DE60301582T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2002007709 2002-02-09
KR20020007709 2002-02-09
KR10-2002-0071398A KR100450825B1 (ko) 2002-02-09 2002-11-16 탄소나노튜브를 이용하는 메모리 소자 및 그 제조방법
KR2002071398 2002-11-16

Publications (2)

Publication Number Publication Date
DE60301582D1 true DE60301582D1 (de) 2005-10-20
DE60301582T2 DE60301582T2 (de) 2006-06-22

Family

ID=36571480

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60301582T Expired - Lifetime DE60301582T2 (de) 2002-02-09 2003-02-07 Speicheranordnung mit Kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung

Country Status (5)

Country Link
US (2) US7015500B2 (de)
EP (1) EP1341184B1 (de)
JP (1) JP5165828B2 (de)
CN (1) CN1287459C (de)
DE (1) DE60301582T2 (de)

Families Citing this family (142)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
EP1341184B1 (de) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
JP4416376B2 (ja) * 2002-05-13 2010-02-17 富士通株式会社 半導体装置及びその製造方法
KR100790859B1 (ko) * 2002-11-15 2008-01-03 삼성전자주식회사 수직 나노튜브를 이용한 비휘발성 메모리 소자
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
WO2004088719A2 (en) * 2003-03-28 2004-10-14 Nantero, Inc. Nanotube-on-gate fet structures and applications
WO2005019793A2 (en) * 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7115901B2 (en) * 2003-06-09 2006-10-03 Nantero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
EP1665278A4 (de) * 2003-08-13 2007-11-07 Nantero Inc Auf nanoröhren basierende schaltelemente mit mehreren steuerungen und daraus hergestellte schaltungen
US7583526B2 (en) 2003-08-13 2009-09-01 Nantero, Inc. Random access memory including nanotube switching elements
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7038299B2 (en) * 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
DE102004001340A1 (de) * 2004-01-08 2005-08-04 Infineon Technologies Ag Verfahren zum Herstellen eines Nanoelement-Feldeffektransistors, Nanoelement-Feldeffekttransistor und Nanoelement-Anordnung
US20050167655A1 (en) * 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7528437B2 (en) 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
KR100694426B1 (ko) * 2004-02-16 2007-03-12 주식회사 하이닉스반도체 나노 튜브 셀 및 이를 이용한 메모리 장치
KR100709462B1 (ko) * 2004-02-16 2007-04-18 주식회사 하이닉스반도체 다층 나노 튜브 셀을 이용한 메모리 장치
KR100709463B1 (ko) * 2004-02-16 2007-04-18 주식회사 하이닉스반도체 나노 튜브 셀을 이용한 메모리 장치
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7329931B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
KR20070028604A (ko) * 2004-06-30 2007-03-12 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 나노선(ｎａｎｏｗｉｒｅ)에 의해 접촉되는 전도성 있는재료로 된 층이 있는 전기 장치 및 그 제조 방법
US6955937B1 (en) * 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
WO2006121461A2 (en) * 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
WO2006137926A2 (en) * 2004-11-02 2006-12-28 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
US20100147657A1 (en) * 2004-11-02 2010-06-17 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
KR100657908B1 (ko) * 2004-11-03 2006-12-14 삼성전자주식회사 분자흡착층을 구비한 메모리 소자
US7634337B2 (en) * 2004-12-29 2009-12-15 Snap-On Incorporated Vehicle or engine diagnostic systems with advanced non-volatile memory
US7937198B2 (en) * 2004-12-29 2011-05-03 Snap-On Incorporated Vehicle or engine diagnostic systems supporting fast boot and reprogramming
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
KR100682925B1 (ko) * 2005-01-26 2007-02-15 삼성전자주식회사 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
KR101078125B1 (ko) * 2005-02-07 2011-10-28 삼성전자주식회사 다공성 물질을 이용한 비휘발성 나노 채널 메모리 소자
US7824946B1 (en) 2005-03-11 2010-11-02 Nantero, Inc. Isolated metal plug process for use in fabricating carbon nanotube memory cells
US8000127B2 (en) * 2009-08-12 2011-08-16 Nantero, Inc. Method for resetting a resistive change memory element
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9390790B2 (en) 2005-04-05 2016-07-12 Nantero Inc. Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US9196615B2 (en) * 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8008745B2 (en) * 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
CN101253628B (zh) * 2005-05-09 2011-04-13 南泰若股份有限公司 双端纳米管器件和系统及其制作方法
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8102018B2 (en) * 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
US7575693B2 (en) 2005-05-23 2009-08-18 Nantero, Inc. Method of aligning nanotubes and wires with an etched feature
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
KR100755367B1 (ko) 2005-06-08 2007-09-04 삼성전자주식회사 실린더형 게이트를 갖는 나노-라인 반도체 소자 및 그제조방법
US7541216B2 (en) * 2005-06-09 2009-06-02 Nantero, Inc. Method of aligning deposited nanotubes onto an etched feature using a spacer
US7439731B2 (en) 2005-06-24 2008-10-21 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
EP1741671B1 (de) * 2005-07-08 2010-09-15 STMicroelectronics Srl Verfahren zur realisierung einer elektrischen Verbindung in einer elektronischen Halbleitervorrichtung zwischen einem nanometrischen Schaltungsarchitektur und elektronischen Standardkomponenten
US7687841B2 (en) * 2005-08-02 2010-03-30 Micron Technology, Inc. Scalable high performance carbon nanotube field effect transistor
US7485908B2 (en) * 2005-08-18 2009-02-03 United States Of America As Represented By The Secretary Of The Air Force Insulated gate silicon nanowire transistor and method of manufacture
EP1763037A1 (de) 2005-09-08 2007-03-14 STMicroelectronics S.r.l. Auf passivierten Nanopartikeln basierende Kohlenstoffnanoröhrenspeicherzelle mit schwebendem gate und deren Herstellungsverfahren
US7342277B2 (en) * 2005-11-21 2008-03-11 Intel Corporation Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
US7385839B2 (en) * 2005-12-01 2008-06-10 International Business Machines Corporation Memory devices using carbon nanotube (CNT) technologies
US20070183189A1 (en) * 2006-02-08 2007-08-09 Thomas Nirschl Memory having nanotube transistor access device
US7439594B2 (en) * 2006-03-16 2008-10-21 Micron Technology, Inc. Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
US8232561B2 (en) * 2006-06-29 2012-07-31 University Of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
US7615492B2 (en) * 2006-07-21 2009-11-10 Atomic Energy Council - Institute Of Nuclear Energy Research Preparing method of CNT-based semiconductor sensitized solar cell
KR101169499B1 (ko) * 2006-08-08 2012-07-27 난테로 인크. 비휘발성 나노튜브 블록을 사용한 메모리 소자 및 교차점 스위치와 이들 어레이
US7731503B2 (en) * 2006-08-21 2010-06-08 Formfactor, Inc. Carbon nanotube contact structures
EP1900681B1 (de) * 2006-09-15 2017-03-15 Imec Tunnelfeldeffekttransistoren auf der Basis von Siliziumnanodrähte
US8354855B2 (en) * 2006-10-16 2013-01-15 Formfactor, Inc. Carbon nanotube columns and methods of making and using carbon nanotube columns as probes
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
GB0801494D0 (en) * 2007-02-23 2008-03-05 Univ Ind & Acad Collaboration Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same
KR100955879B1 (ko) 2007-02-26 2010-05-04 고려대학교 산학협력단 비휘발성 메모리 전자소자 및 그 제조방법
WO2008112764A1 (en) 2007-03-12 2008-09-18 Nantero, Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
KR101375833B1 (ko) * 2007-05-03 2014-03-18 삼성전자주식회사 게르마늄 나노로드를 구비한 전계효과 트랜지스터 및 그제조방법
US8115187B2 (en) * 2007-05-22 2012-02-14 Nantero, Inc. Triodes using nanofabric articles and methods of making the same
WO2009002748A1 (en) 2007-06-22 2008-12-31 Nantero, Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
JP5227660B2 (ja) * 2007-07-11 2013-07-03 日精樹脂工業株式会社 カーボンナノ複合材料の製造方法
US8043978B2 (en) * 2007-10-11 2011-10-25 Riken Electronic device and method for producing electronic device
US8149007B2 (en) * 2007-10-13 2012-04-03 Formfactor, Inc. Carbon nanotube spring contact structures with mechanical and electrical components
US8063430B2 (en) * 2007-10-18 2011-11-22 Samsung Electronics Co., Ltd. Semiconductor devices and methods of manufacturing and operating same
EP2062515B1 (de) * 2007-11-20 2012-08-29 So, Kwok Kuen Schüssel- und Korbanordnung sowie Salatschleuder mit einer solchen Korbanordnung
US7482652B1 (en) * 2008-01-02 2009-01-27 International Business Machines Corporation Multiwalled carbon nanotube memory device
US7786466B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Carbon nanotube based integrated semiconductor circuit
KR100930997B1 (ko) 2008-01-22 2009-12-10 한국화학연구원 탄소나노튜브 트랜지스터 제조 방법 및 그에 의한탄소나노튜브 트랜지스터
US8659940B2 (en) * 2008-03-25 2014-02-25 Nantero Inc. Carbon nanotube-based neural networks and methods of making and using same
WO2009155359A1 (en) * 2008-06-20 2009-12-23 Nantero, Inc. Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same
US7847588B2 (en) * 2008-08-14 2010-12-07 Nantero, Inc. Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
CN101354913B (zh) * 2008-09-05 2010-06-02 北京大学 一种封闭型双层纳米碳管分子级存储单元
KR101491714B1 (ko) * 2008-09-16 2015-02-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8272124B2 (en) * 2009-04-03 2012-09-25 Formfactor, Inc. Anchoring carbon nanotube columns
US20100252317A1 (en) * 2009-04-03 2010-10-07 Formfactor, Inc. Carbon nanotube contact structures for use with semiconductor dies and other electronic devices
US8128993B2 (en) * 2009-07-31 2012-03-06 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8574673B2 (en) 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
TWI488206B (zh) * 2009-08-07 2015-06-11 Nantero Inc 奈米管靜電放電保護裝置及對應的非揮發性與揮發性的奈米管開關
US9099537B2 (en) * 2009-08-28 2015-08-04 International Business Machines Corporation Selective nanotube growth inside vias using an ion beam
US8351239B2 (en) * 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8222704B2 (en) * 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
US9362390B2 (en) 2010-02-22 2016-06-07 Nantero, Inc. Logic elements comprising carbon nanotube field effect transistor (CNTFET) devices and methods of making same
KR101129930B1 (ko) * 2010-03-09 2012-03-27 주식회사 하이닉스반도체 반도체 소자 및 그의 형성 방법
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
US8492748B2 (en) * 2011-06-27 2013-07-23 International Business Machines Corporation Collapsable gate for deposited nanostructures
US9825154B2 (en) * 2011-11-28 2017-11-21 Michigan Technological University Room temperature tunneling switches and methods of making and using the same
KR102084288B1 (ko) 2012-11-05 2020-03-03 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 디스플레이의 휘도 보상
DE102013204546A1 (de) * 2013-03-15 2014-09-18 Carl Zeiss Smt Gmbh Optisches Bauteil
US9007732B2 (en) 2013-03-15 2015-04-14 Nantero Inc. Electrostatic discharge protection circuits using carbon nanotube field effect transistor (CNTFET) devices and methods of making same
CN104779346B (zh) * 2014-01-15 2017-04-12 清华大学 相变存储单元的制备方法
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
CN104934536A (zh) * 2015-06-04 2015-09-23 复旦大学 一种掺有碳纳米管的有机薄膜存储器
US9947400B2 (en) 2016-04-22 2018-04-17 Nantero, Inc. Methods for enhanced state retention within a resistive change cell
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements
US10355206B2 (en) 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements
CN108903924B (zh) * 2018-07-03 2021-02-19 浙江理工大学 一种采取静止性震颤信号的手环穿戴装置和方法
CN113053942B (zh) * 2021-03-15 2021-11-23 中国电子科技集团公司第五十八研究所 高抗辐射磁随机存储器件及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348711B1 (en) * 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6203864B1 (en) * 1998-06-08 2001-03-20 Nec Corporation Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube
US6361861B2 (en) * 1999-06-14 2002-03-26 Battelle Memorial Institute Carbon nanotubes on a substrate
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
US6798000B2 (en) * 2000-07-04 2004-09-28 Infineon Technologies Ag Field effect transistor
EP1170799A3 (de) * 2000-07-04 2009-04-01 Infineon Technologies AG Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements
GB2364933B (en) * 2000-07-18 2002-12-31 Lg Electronics Inc Method of horizontally growing carbon nanotubes
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
EP1341184B1 (de) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung

Also Published As

Publication number Publication date
CN1287459C (zh) 2006-11-29
DE60301582T2 (de) 2006-06-22
EP1341184A1 (de) 2003-09-03
US7378328B2 (en) 2008-05-27
JP5165828B2 (ja) 2013-03-21
US20060252276A1 (en) 2006-11-09
US7015500B2 (en) 2006-03-21
EP1341184B1 (de) 2005-09-14
CN1450643A (zh) 2003-10-22
JP2003264249A (ja) 2003-09-19
US20030170930A1 (en) 2003-09-11

Similar Documents

Publication Publication Date Title
DE60301582D1 (de) Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung
DE60320078D1 (de) Prothesenvorrichtung und Verfahren zur Herstellung derselben
DE60114494D1 (de) Organisches elektrolumineszentes Element und Verfahren zur Herstellung desselben
DE60238459D1 (de) Einzelelektron-Speicheranordnung und Verfahren zur Herstellung
DE60300022D1 (de) Feldemissionsanzeigevorrichtung mit Triodenstruktur mit Kohlenstoffnanoröhren und Verfahren zur deren Herstellung
DE502004011667D1 (de) Steuergeräteeinheit und verfahren zur herstellung derselben
DE60132554D1 (de) STATORBLECHKöRPER UND VERFAHREN ZUR HERSTELLUNG DESSELBEN
DE602004013489D1 (de) Halbleiter-Speicherbauelement und Verfahren zur Herstellung desselben
DE502004009597D1 (de) Gummimaterial und verfahren zur herstellung desselben
DE602004027575D1 (de) Bipoläre Batterie und Verfahren zur Herstellung
DE60322537D1 (de) Verfahren zur herstellung von kohlenstoffnanoröhren
DE60308596D1 (de) Verfahren zur Herstellung von anorganisichen Nanoröhren
DE10216633B8 (de) Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung
AT502301A3 (de) Röntgenanode und verfahren zur herstellung derselben
DE60308993D1 (de) Sondengehäuse und verfahren zur herstellung
DE60002505D1 (de) Lithium kobaltoxide und verfahren zur herstellung
ATE349165T1 (de) Verbesserungen an filterzigaretten und verfahren zur deren herstellung
DE60217366D1 (de) Sphärischer bandförmiger dichtungskörper und verfahren zur herstellung des dichtungskörpers
DE60319099D1 (de) Kaugummiformulierung und verfahren zur herstellung derselben
DE602004020476D1 (de) Verfahren zur herstellung von thermoplastischen vulkanisaten und thermoplastischen vulkanisaten
DE60330036D1 (de) Lagereinheit für rad und verfahren zur herstellung der lagereinheit
DE602004008685D1 (de) Verbundwerkstoff und Verfahren zur Herstellung desselben
ATE477776T1 (de) Geformte absorbierende auflagen und verfahren zur dessen herstellung
DE60213444D1 (de) Fluorpolymerlaminate und verfahren zur herstellung derselben
DE60333958D1 (de) Polyetherpolymer und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8364 No opposition during term of opposition