DE60305986D1 - Reinigung von Halogeniden der Gruppe IVb - Google Patents

Reinigung von Halogeniden der Gruppe IVb

Info

Publication number
DE60305986D1
DE60305986D1 DE60305986T DE60305986T DE60305986D1 DE 60305986 D1 DE60305986 D1 DE 60305986D1 DE 60305986 T DE60305986 T DE 60305986T DE 60305986 T DE60305986 T DE 60305986T DE 60305986 D1 DE60305986 D1 DE 60305986D1
Authority
DE
Germany
Prior art keywords
tetrachloride
group ivb
zirconium
titanium
hafnium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60305986T
Other languages
English (en)
Other versions
DE60305986T2 (de
Inventor
Heather Regina Bowen
David Allen Roberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE60305986D1 publication Critical patent/DE60305986D1/de
Application granted granted Critical
Publication of DE60305986T2 publication Critical patent/DE60305986T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/06—Halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B9/00—General methods of preparing halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B9/00—General methods of preparing halides
    • C01B9/02—Chlorides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/02—Halides of titanium
    • C01G23/022—Titanium tetrachloride
    • C01G23/024—Purification of tetrachloride
DE60305986T 2002-01-17 2003-01-16 Reinigung von Halogeniden der Gruppe IVb Expired - Fee Related DE60305986T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/052,052 US6770254B2 (en) 2002-01-17 2002-01-17 Purification of group IVb metal halides
US52052 2002-01-17

Publications (2)

Publication Number Publication Date
DE60305986D1 true DE60305986D1 (de) 2006-07-27
DE60305986T2 DE60305986T2 (de) 2009-10-01

Family

ID=21975122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305986T Expired - Fee Related DE60305986T2 (de) 2002-01-17 2003-01-16 Reinigung von Halogeniden der Gruppe IVb

Country Status (7)

Country Link
US (1) US6770254B2 (de)
EP (1) EP1329418B1 (de)
JP (1) JP3958691B2 (de)
KR (1) KR100501049B1 (de)
AT (1) ATE329879T1 (de)
DE (1) DE60305986T2 (de)
TW (1) TWI226875B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US20030232501A1 (en) * 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
ATE473305T1 (de) * 2003-09-19 2010-07-15 Stanford Res Inst Int Verfahren und vorrichtungen zur herstellung von metallischen zusammensetzungen durch reduktion von metallhalogeniden
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
JP2007223877A (ja) * 2006-02-27 2007-09-06 Showa Denko Kk 高純度四塩化チタンの製造方法およびそれから得られうる高純度四塩化チタン
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
JP4740033B2 (ja) * 2006-05-12 2011-08-03 東邦チタニウム株式会社 四塩化チタンの精製方法およびこれに用いる精製装置
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US20130280149A1 (en) * 2012-04-20 2013-10-24 Cristal Usa Inc. Purification of Titanium Tetrachloride
CN103936063B (zh) * 2014-04-22 2015-04-15 攀钢集团攀枝花钢铁研究院有限公司 粗四氯化钛除钒产生的含钒泥浆的回收方法及回收系统
JP7029325B2 (ja) * 2018-03-19 2022-03-03 東邦チタニウム株式会社 ＴｉＣｌ４又はスポンジチタンの製造方法
CN111087018A (zh) * 2018-10-24 2020-05-01 中国石油化工股份有限公司 一种粗四氯化钛除钒组合物及除钒方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB596576A (en) 1944-08-30 1948-01-07 Magnesium Elektron Ltd Purifying anhydrous zirconium chloride
US2543591A (en) * 1950-06-20 1951-02-27 Stauffer Chemical Co Purification of titanium tetrachloride
SE342214B (de) * 1968-05-10 1972-01-31 Montedison Spa
US3655344A (en) * 1969-09-02 1972-04-11 Ppg Industries Inc Treatment of titanium tetrachloride drier residue
US3742612A (en) * 1971-04-01 1973-07-03 Ppg Industries Inc Treatment of titanium tetrachloride dryer residue
GB1360587A (en) * 1971-12-27 1974-07-17 Sir Soc Italiana Resine Spa Process for the purification of titanium tetrachloride
DE2218361A1 (de) * 1972-04-15 1973-10-31 Bayer Ag Verfahren zur kontinuierlichen reinigung von titantetrachlorid
US4070252A (en) * 1977-04-18 1978-01-24 Scm Corporation Purification of crude titanium tetrachloride
JPS56155021A (en) * 1980-04-24 1981-12-01 Nippon Ii P Rubber Kk Reduction of titanium tetrahalide
US4578252A (en) 1985-05-14 1986-03-25 Hughes Aircraft Company Method for preparing ultra-pure zirconium and hafnium tetrafluorides
DE3623322A1 (de) * 1986-07-11 1988-01-21 Bayer Ag Verfahren zur herstellung von ticl(pfeil abwaerts)4(pfeil abwaerts)
US4783324A (en) * 1987-02-03 1988-11-08 Kemira, Inc. Preparation of pure titanium tetrachlorides and solutions of titanium tetrachlorides
US4965055A (en) 1990-03-27 1990-10-23 The United States Of America As Represented By The Secretary Of The Navy Preparation of ultra-pure metal halides
US5437854A (en) * 1994-06-27 1995-08-01 Westinghouse Electric Corporation Process for purifying zirconium tetrachloride
JPH10508656A (ja) 1994-10-11 1998-08-25 ゲレスト インコーポレーテツド コンフオーマルなチタン系フイルムおよびその製造方法

Also Published As

Publication number Publication date
KR20030063136A (ko) 2003-07-28
KR100501049B1 (ko) 2005-07-18
JP3958691B2 (ja) 2007-08-15
TWI226875B (en) 2005-01-21
ATE329879T1 (de) 2006-07-15
US20030133861A1 (en) 2003-07-17
EP1329418B1 (de) 2006-06-14
JP2003212544A (ja) 2003-07-30
US6770254B2 (en) 2004-08-03
EP1329418A2 (de) 2003-07-23
DE60305986T2 (de) 2009-10-01
TW200302205A (en) 2003-08-01
EP1329418A3 (de) 2003-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee