DE60311199D1 - Vorrichtung und Verfahren, um einen Speicher in Selbstauffrischungsbetrieb zu schalten - Google Patents

Vorrichtung und Verfahren, um einen Speicher in Selbstauffrischungsbetrieb zu schalten

Info

Publication number
DE60311199D1
DE60311199D1 DE60311199T DE60311199T DE60311199D1 DE 60311199 D1 DE60311199 D1 DE 60311199D1 DE 60311199 T DE60311199 T DE 60311199T DE 60311199 T DE60311199 T DE 60311199T DE 60311199 D1 DE60311199 D1 DE 60311199D1
Authority
DE
Germany
Prior art keywords
switching
self
memory
refresh mode
refresh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60311199T
Other languages
English (en)
Other versions
DE60311199T2 (de
Inventor
Steven J Valin
Brad A Reger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NetApp Inc
Original Assignee
Network Appliance Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/219,376 external-priority patent/US7139937B1/en
Application filed by Network Appliance Inc filed Critical Network Appliance Inc
Application granted granted Critical
Publication of DE60311199D1 publication Critical patent/DE60311199D1/de
Publication of DE60311199T2 publication Critical patent/DE60311199T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
DE60311199T 2002-08-15 2003-08-15 Vorrichtung und Verfahren, um einen Speicher in Selbstauffrischungsbetrieb zu schalten Expired - Fee Related DE60311199T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/219,376 US7139937B1 (en) 2002-08-15 2002-08-15 Method and apparatus to establish safe state in a volatile computer memory under multiple hardware and software malfunction conditions
US219376 2002-08-15
US10/407,533 US7200711B2 (en) 2002-08-15 2003-04-04 Apparatus and method for placing memory into self-refresh state
US407533 2003-04-04

Publications (2)

Publication Number Publication Date
DE60311199D1 true DE60311199D1 (de) 2007-03-08
DE60311199T2 DE60311199T2 (de) 2007-11-08

Family

ID=31498057

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60311199T Expired - Fee Related DE60311199T2 (de) 2002-08-15 2003-08-15 Vorrichtung und Verfahren, um einen Speicher in Selbstauffrischungsbetrieb zu schalten

Country Status (4)

Country Link
US (1) US7200711B2 (de)
EP (1) EP1394807B1 (de)
JP (1) JP4511140B2 (de)
DE (1) DE60311199T2 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4778694B2 (ja) * 2004-09-14 2011-09-21 パナソニック株式会社 半導体集積回路
JP4200969B2 (ja) * 2004-12-03 2008-12-24 セイコーエプソン株式会社 半導体装置及び電子機器
US9542352B2 (en) * 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US8438328B2 (en) 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US8359187B2 (en) * 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US8055833B2 (en) * 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
US20080028136A1 (en) * 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US8041881B2 (en) * 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
US8327104B2 (en) * 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US7580312B2 (en) * 2006-07-31 2009-08-25 Metaram, Inc. Power saving system and method for use with a plurality of memory circuits
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US7386656B2 (en) * 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US7609567B2 (en) * 2005-06-24 2009-10-27 Metaram, Inc. System and method for simulating an aspect of a memory circuit
US7472220B2 (en) * 2006-07-31 2008-12-30 Metaram, Inc. Interface circuit system and method for performing power management operations utilizing power management signals
US7392338B2 (en) * 2006-07-31 2008-06-24 Metaram, Inc. Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits
US8077535B2 (en) * 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8244971B2 (en) * 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US7590796B2 (en) * 2006-07-31 2009-09-15 Metaram, Inc. System and method for power management in memory systems
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US20080126690A1 (en) * 2006-02-09 2008-05-29 Rajan Suresh N Memory module with memory stack
WO2007002324A2 (en) * 2005-06-24 2007-01-04 Metaram, Inc. An integrated memory core and memory interface circuit
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US8090897B2 (en) 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
GB2444663B (en) 2005-09-02 2011-12-07 Metaram Inc Methods and apparatus of stacking drams
TWI308694B (en) * 2005-12-13 2009-04-11 Wistron Corp Method of data protection for computers
US20070168740A1 (en) * 2006-01-10 2007-07-19 Telefonaktiebolaget Lm Ericsson (Publ) Method and apparatus for dumping a process memory space
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
US20080025136A1 (en) * 2006-07-31 2008-01-31 Metaram, Inc. System and method for storing at least a portion of information received in association with a first operation for use in performing a second operation
US20080028135A1 (en) * 2006-07-31 2008-01-31 Metaram, Inc. Multiple-component memory interface system and method
US7724589B2 (en) * 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
US7616508B1 (en) * 2006-08-10 2009-11-10 Actel Corporation Flash-based FPGA with secure reprogramming
US8209479B2 (en) * 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
US20090089514A1 (en) * 2007-09-28 2009-04-02 Durgesh Srivastava Implementing Asynchronous Request for Forcing Dynamic Memory into Self Refresh
EP2441007A1 (de) * 2009-06-09 2012-04-18 Google, Inc. Programmierung von dimm-abschlusswiderstandswerten
US8694812B2 (en) * 2010-03-29 2014-04-08 Dot Hill Systems Corporation Memory calibration method and apparatus for power reduction during flash operation
US9014749B2 (en) 2010-08-12 2015-04-21 Qualcomm Incorporated System and method to initiate a housekeeping operation at a mobile device
US9153311B1 (en) * 2014-05-27 2015-10-06 SRC Computers, LLC System and method for retaining DRAM data when reprogramming reconfigurable devices with DRAM memory controllers
US9530483B2 (en) 2014-05-27 2016-12-27 Src Labs, Llc System and method for retaining dram data when reprogramming reconfigurable devices with DRAM memory controllers incorporating a data maintenance block colocated with a memory module or subsystem
US9537979B2 (en) * 2014-12-12 2017-01-03 Intel Corporation Network adapter optical alert system
US9568971B2 (en) 2015-02-05 2017-02-14 Apple Inc. Solid state drive with self-refresh power saving mode
US10127968B2 (en) 2015-08-03 2018-11-13 Intel Corporation Method and apparatus for completing pending write requests to volatile memory prior to transitioning to self-refresh mode

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710903A (en) * 1986-03-31 1987-12-01 Wang Laboratories, Inc. Pseudo-static memory subsystem
JPS62293593A (ja) * 1986-06-13 1987-12-21 Fujitsu Ltd メモリバツクアツプ制御回路
US4979171A (en) 1989-05-03 1990-12-18 Rockwell International Corporation Announcement and tone code generator for telephonic network and method
US5175853A (en) 1990-10-09 1992-12-29 Intel Corporation Transparent system interrupt
US5781784A (en) 1992-07-09 1998-07-14 Zilog, Inc. Dynamic power management of solid state memories
JPH07182857A (ja) 1993-12-24 1995-07-21 Toshiba Corp マイコンシステム
JP3524151B2 (ja) * 1994-04-28 2004-05-10 キヤノン株式会社 メモリバックアップ制御装置
US5692202A (en) 1995-12-29 1997-11-25 Intel Corporation System, apparatus, and method for managing power in a computer system
US5935259A (en) 1996-09-24 1999-08-10 Apple Computer, Inc. System and method for preventing damage to media files within a digital camera device
US6216233B1 (en) * 1997-02-12 2001-04-10 Intel Corporation Maintaining a memory while in a power management mode
JPH10228768A (ja) * 1997-02-14 1998-08-25 Mitsubishi Electric Corp 半導体記憶装置
US6212599B1 (en) 1997-11-26 2001-04-03 Intel Corporation Method and apparatus for a memory control system including a secondary controller for DRAM refresh during sleep mode
US6088762A (en) * 1998-06-19 2000-07-11 Intel Corporation Power failure mode for a memory controller
US6119200A (en) 1998-08-18 2000-09-12 Mylex Corporation System and method to protect SDRAM data during warm resets
US6317657B1 (en) 1998-08-18 2001-11-13 International Business Machines Corporation Method to battery back up SDRAM data on power failure
KR100381966B1 (ko) 1998-12-28 2004-03-22 주식회사 하이닉스반도체 반도체메모리장치및그구동방법
JP3588267B2 (ja) * 1999-03-05 2004-11-10 三洋電機株式会社 リフレッシュ回路及びそれを用いた光ディスク再生装置の制御回路
US6633987B2 (en) * 2000-03-24 2003-10-14 Intel Corporation Method and apparatus to implement the ACPI(advanced configuration and power interface) C3 state in a RDRAM based system
JP2002041445A (ja) 2000-05-19 2002-02-08 Matsushita Electric Ind Co Ltd 高性能ｄｍａコントローラ

Also Published As

Publication number Publication date
JP4511140B2 (ja) 2010-07-28
EP1394807A3 (de) 2004-09-01
JP2005115972A (ja) 2005-04-28
DE60311199T2 (de) 2007-11-08
US7200711B2 (en) 2007-04-03
EP1394807B1 (de) 2007-01-17
EP1394807A2 (de) 2004-03-03
US20040034732A1 (en) 2004-02-19

Similar Documents

Publication Publication Date Title
DE60311199D1 (de) Vorrichtung und Verfahren, um einen Speicher in Selbstauffrischungsbetrieb zu schalten
HK1134391A1 (en) A method for use in an access point
DE60222798D1 (de) Verfahren zum garantierten mediumzugriff in einen drahtlosen netzwerk
DE60305873D1 (de) Vorrichtung zum entfernung von objekten in körperlumen
GB2417350B (en) Apparatus and method for testing memory cards
GB0426364D0 (en) Method and apparatus for data retention in a storage system
EP1473628A4 (de) Informationsverarbeitungsvorrichtung, speicherverwaltungsvorrichtung, speicherverwaltungsverfahren und informationsverarbeitungsverfahren
MA29009B1 (fr) Procede, dispositif et kit en particulier destines a appliquer un produit cosmetique
AU2003294969A8 (en) Method and apparatus for block oriented memory management provided in smart card controllers
EP1413959A4 (de) Flash-speichervorrichtung und verfahren zum zusammeführen von darin gespeicherten daten
AU2003277017A8 (en) Non-volatile memory device and method for forming
IL200559A0 (en) A method and device for maniplating individual small objects
DE50207822D1 (de) Verfahren, gerätesystem und computerprogramm zum speichern und abrufen von druckdaten in einem netzwerk
EP1710701A4 (de) Verfahren zur verwaltung der daten in einem wechselbaren speicher
IL174873A0 (en) System and method for dynamically executing a function in a programmable logic array
DE502004000669D1 (de) Dosiersystem mit Speicher und Verfahren zum Betreiben eines Dosiersystems
DE60316197D1 (de) Verfahren und System zum Teilen eines Speichermoduls
DE50207435D1 (de) Verfahren zum beschreiben magnetoresistiver speicherzellen und mit diesem verfahren beschreibbarer magnetoresistiver speicher
DE50301739D1 (de) Verfahren zum verarbeiten von flachen sendungen in sendungsbehältern
DE60234412D1 (de) Vorrichtung und Verfahren um einen Datenträger in einer Medienspeichervorrichtung zurückzuhalten
DE60225612D1 (de) Verfahren und Vorrichtung zum Erfrischen von Referenzzellen
FI20030191A0 (fi) Menetelmä muistikortin osoittamiseksi, muistikorttia käyttävä järjestelmä, ja muistikortti
DE10393702D2 (de) Verfahren zum Hertstellen einer Speicherzelle, Speicherzelle und Speicherzellen-Anordnung
NO20031453D0 (no) Brönnsystem, enhetsmodul for bruk i brönnsystemet og fremgangsmåte for dannelse av et brönnsystem
SG123560A1 (en) Empirical data based test optimization method

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee