DE60315532D1 - Verfahren zur Reudzierung der Programmier- und Lese-Störungen eines nicht-flüchtigen Speichers - Google Patents

Verfahren zur Reudzierung der Programmier- und Lese-Störungen eines nicht-flüchtigen Speichers

Info

Publication number
DE60315532D1
DE60315532D1 DE60315532T DE60315532T DE60315532D1 DE 60315532 D1 DE60315532 D1 DE 60315532D1 DE 60315532 T DE60315532 T DE 60315532T DE 60315532 T DE60315532 T DE 60315532T DE 60315532 D1 DE60315532 D1 DE 60315532D1
Authority
DE
Germany
Prior art keywords
programming
volatile memory
separate
exemplary embodiment
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60315532T
Other languages
English (en)
Other versions
DE60315532T2 (de
Inventor
Yan Li
Jian Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60315532D1 publication Critical patent/DE60315532D1/de
Publication of DE60315532T2 publication Critical patent/DE60315532T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
DE60315532T 2002-02-27 2003-02-26 Verfahren zur Reudzierung der Programmier- und Lese-Störungen eines nicht-flüchtigen Speichers Expired - Lifetime DE60315532T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/086,495 US6771536B2 (en) 2002-02-27 2002-02-27 Operating techniques for reducing program and read disturbs of a non-volatile memory
US86495 2002-02-27

Publications (2)

Publication Number Publication Date
DE60315532D1 true DE60315532D1 (de) 2007-09-27
DE60315532T2 DE60315532T2 (de) 2008-05-15

Family

ID=27733415

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60334652T Expired - Lifetime DE60334652D1 (de) 2002-02-27 2003-02-26 Verfahrenstechniken zur Reduzierung von Programm- und Lesestörungen eines nicht-flüchtigen Speichers
DE60315532T Expired - Lifetime DE60315532T2 (de) 2002-02-27 2003-02-26 Verfahren zur Reudzierung der Programmier- und Lese-Störungen eines nicht-flüchtigen Speichers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60334652T Expired - Lifetime DE60334652D1 (de) 2002-02-27 2003-02-26 Verfahrenstechniken zur Reduzierung von Programm- und Lesestörungen eines nicht-flüchtigen Speichers

Country Status (7)

Country Link
US (4) US6771536B2 (de)
EP (2) EP1341185B8 (de)
JP (1) JP4511121B2 (de)
KR (1) KR101035355B1 (de)
CN (1) CN1444231B (de)
AT (2) ATE370499T1 (de)
DE (2) DE60334652D1 (de)

Families Citing this family (259)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170802B2 (en) * 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
US6985388B2 (en) * 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US6771536B2 (en) * 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
JP4052857B2 (ja) * 2002-03-18 2008-02-27 株式会社日立製作所 不揮発性半導体メモリアレイ及び該メモリアレイリード方法
US6906376B1 (en) * 2002-06-13 2005-06-14 A Plus Flash Technology, Inc. EEPROM cell structure and array architecture
JP4113493B2 (ja) * 2003-06-12 2008-07-09 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
US7177199B2 (en) 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
US7419895B2 (en) * 2003-10-23 2008-09-02 Micron Technology, Inc. NAND memory arrays
WO2005066793A2 (en) * 2003-12-30 2005-07-21 Sandisk Corporation Non-volatile memory and method with non-sequential update block management
JP2005268621A (ja) * 2004-03-19 2005-09-29 Toshiba Corp 半導体集積回路装置
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7644239B2 (en) 2004-05-03 2010-01-05 Microsoft Corporation Non-volatile memory cache performance improvement
WO2005109441A1 (ja) * 2004-05-11 2005-11-17 Spansion Llc 半導体装置および書き込み方法
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
JP4750034B2 (ja) * 2004-07-30 2011-08-17 スパンション エルエルシー 半導体装置および書き込み方法
US7490197B2 (en) 2004-10-21 2009-02-10 Microsoft Corporation Using external memory devices to improve system performance
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7317116B2 (en) * 2004-12-10 2008-01-08 Archer-Daniels-Midland-Company Processes for the preparation and purification of hydroxymethylfuraldehyde and derivatives
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
US7315917B2 (en) 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US9104315B2 (en) 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
US7877539B2 (en) * 2005-02-16 2011-01-25 Sandisk Corporation Direct data file storage in flash memories
US20060184719A1 (en) 2005-02-16 2006-08-17 Sinclair Alan W Direct data file storage implementation techniques in flash memories
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
KR100602320B1 (ko) * 2005-05-03 2006-07-18 주식회사 하이닉스반도체 프로그램 속도가 균일한 비휘발성 메모리 소자
US7295478B2 (en) * 2005-05-12 2007-11-13 Sandisk Corporation Selective application of program inhibit schemes in non-volatile memory
US7457910B2 (en) * 2005-06-29 2008-11-25 Sandisk Corproation Method and system for managing partitions in a storage device
US7627733B2 (en) 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
US7558906B2 (en) 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7984084B2 (en) 2005-08-03 2011-07-19 SanDisk Technologies, Inc. Non-volatile memory with scheduled reclaim operations
US7552271B2 (en) 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
US7480766B2 (en) * 2005-08-03 2009-01-20 Sandisk Corporation Interfacing systems operating through a logical address space and on a direct data file basis
US7949845B2 (en) * 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7669003B2 (en) * 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
US7218552B1 (en) 2005-09-09 2007-05-15 Sandisk Corporation Last-first mode and method for programming of non-volatile memory with reduced program disturb
US7170788B1 (en) 2005-09-09 2007-01-30 Sandisk Corporation Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb
JP2007094900A (ja) * 2005-09-29 2007-04-12 Eastman Kodak Co アクセス装置
US7814262B2 (en) * 2005-10-13 2010-10-12 Sandisk Corporation Memory system storing transformed units of data in fixed sized storage blocks
US7529905B2 (en) * 2005-10-13 2009-05-05 Sandisk Corporation Method of storing transformed units of data in a memory system having fixed sized storage blocks
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7379330B2 (en) * 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US7289348B2 (en) * 2005-11-10 2007-10-30 Sandisk Corporation Reverse coupling effect with timing information
US8683082B2 (en) * 2005-11-14 2014-03-25 Sandisk Technologies Inc. Removable memory devices for displaying advertisement content on host systems using applications launched from removable memory devices
US8683081B2 (en) * 2005-11-14 2014-03-25 Sandisk Technologies Inc. Methods for displaying advertisement content on host system using application launched from removable memory device
US7739078B2 (en) * 2005-12-01 2010-06-15 Sandisk Corporation System for managing appliances
US7353073B2 (en) * 2005-12-01 2008-04-01 Sandisk Corporation Method for managing appliances
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7877540B2 (en) * 2005-12-13 2011-01-25 Sandisk Corporation Logically-addressed file storage methods
US8914557B2 (en) 2005-12-16 2014-12-16 Microsoft Corporation Optimizing write and wear performance for a memory
US20070143117A1 (en) * 2005-12-21 2007-06-21 Conley Kevin M Voice controlled portable memory storage device
US20070156998A1 (en) * 2005-12-21 2007-07-05 Gorobets Sergey A Methods for memory allocation in non-volatile memories with a directly mapped file storage system
US20070143566A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with data alignment in a directly mapped file storage system
US20070143561A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system
US8161289B2 (en) * 2005-12-21 2012-04-17 SanDisk Technologies, Inc. Voice controlled portable memory storage device
US20070143378A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with adaptive file handling in a directly mapped file storage system
US7917949B2 (en) * 2005-12-21 2011-03-29 Sandisk Corporation Voice controlled portable memory storage device
US20070143567A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for data alignment in non-volatile memories with a directly mapped file storage system
US20070143111A1 (en) * 2005-12-21 2007-06-21 Conley Kevin M Voice controlled portable memory storage device
US7769978B2 (en) 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
US7793068B2 (en) 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US20070143560A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with memory allocation for a directly mapped file storage system
US8479186B2 (en) * 2005-12-22 2013-07-02 Sandisk Technologies Inc. Method for program code execution with memory storage controller participation
US8484632B2 (en) * 2005-12-22 2013-07-09 Sandisk Technologies Inc. System for program code execution with memory storage controller participation
US7616481B2 (en) * 2005-12-28 2009-11-10 Sandisk Corporation Memories with alternate sensing techniques
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US7616489B2 (en) * 2006-02-08 2009-11-10 Micron Technology, Inc. Memory array segmentation and methods
JP4594878B2 (ja) * 2006-02-23 2010-12-08 シャープ株式会社 可変抵抗素子の抵抗制御方法及び不揮発性半導体記憶装置
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7551492B2 (en) * 2006-03-29 2009-06-23 Mosaid Technologies, Inc. Non-volatile semiconductor memory with page erase
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
US7692973B2 (en) * 2006-03-31 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
US7426137B2 (en) * 2006-04-12 2008-09-16 Sandisk Corporation Apparatus for reducing the impact of program disturb during read
US7499326B2 (en) * 2006-04-12 2009-03-03 Sandisk Corporation Apparatus for reducing the impact of program disturb
US7436713B2 (en) 2006-04-12 2008-10-14 Sandisk Corporation Reducing the impact of program disturb
US7515463B2 (en) 2006-04-12 2009-04-07 Sandisk Corporation Reducing the impact of program disturb during read
US7447821B2 (en) * 2006-04-21 2008-11-04 Sandisk Corporation U3 adapter
US7516261B2 (en) * 2006-04-21 2009-04-07 Sandisk Corporation Method for U3 adapter
US7917685B2 (en) * 2006-05-04 2011-03-29 Micron Technology, Inc. Method for reading a multilevel cell in a non-volatile memory device
US7457163B2 (en) 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7440331B2 (en) 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7339846B2 (en) * 2006-07-14 2008-03-04 Macronix International Co., Ltd. Method and apparatus for reading data from nonvolatile memory
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7885119B2 (en) * 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
EP1883076B1 (de) * 2006-07-28 2011-12-21 STMicroelectronics Srl Verfahren zur Zellprogrammierung einer NAND-Speichervorrichtung
US7567461B2 (en) 2006-08-18 2009-07-28 Micron Technology, Inc. Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
KR100805839B1 (ko) 2006-08-29 2008-02-21 삼성전자주식회사 고전압 발생기를 공유하는 플래시 메모리 장치
US7684243B2 (en) 2006-08-31 2010-03-23 Micron Technology, Inc. Reducing read failure in a memory device
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
KR100773742B1 (ko) * 2006-09-30 2007-11-09 삼성전자주식회사 저장 소자들 사이의 커플링 효과를 감소시킬 수 있는비휘발성 메모리 장치와 그 방법
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US7372748B2 (en) * 2006-10-16 2008-05-13 Sandisk Corporation Voltage regulator in a non-volatile memory device
US7917686B2 (en) * 2006-12-26 2011-03-29 Sandisk Corporation Host system with direct data file interface configurability
US8166267B2 (en) * 2006-12-26 2012-04-24 Sandisk Technologies Inc. Managing a LBA interface in a direct data file memory system
US8046522B2 (en) * 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US20080155175A1 (en) * 2006-12-26 2008-06-26 Sinclair Alan W Host System That Manages a LBA Interface With Flash Memory
US8209461B2 (en) 2006-12-26 2012-06-26 Sandisk Technologies Inc. Configuration of host LBA interface with flash memory
US7739444B2 (en) 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
US7570520B2 (en) 2006-12-27 2009-08-04 Sandisk Corporation Non-volatile storage system with initial programming voltage based on trial
US7551482B2 (en) 2006-12-27 2009-06-23 Sandisk Corporation Method for programming with initial programming voltage based on trial
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
WO2008083132A2 (en) * 2006-12-28 2008-07-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
WO2008083137A1 (en) * 2006-12-29 2008-07-10 Sandisk Corporation Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7890723B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation Method for code execution
KR100811278B1 (ko) * 2006-12-29 2008-03-07 주식회사 하이닉스반도체 셀프 부스팅을 이용한 낸드 플래시 메모리소자의 읽기 방법
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7890724B2 (en) * 2006-12-29 2011-02-15 Sandisk Corporation System for code execution
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7525843B2 (en) * 2006-12-30 2009-04-28 Sandisk Corporation Non-volatile storage with adaptive body bias
US7468920B2 (en) 2006-12-30 2008-12-23 Sandisk Corporation Applying adaptive body bias to non-volatile storage
US7554853B2 (en) * 2006-12-30 2009-06-30 Sandisk Corporation Non-volatile storage with bias based on selective word line
US7468919B2 (en) * 2006-12-30 2008-12-23 Sandisk Corporation Biasing non-volatile storage based on selected word line
US7583535B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Biasing non-volatile storage to compensate for temperature variations
US7583539B2 (en) * 2006-12-30 2009-09-01 Sandisk Corporation Non-volatile storage with bias for temperature compensation
KR100850510B1 (ko) * 2007-01-17 2008-08-05 삼성전자주식회사 분리된 스트링 선택 라인 구조를 갖는 플래시 메모리 장치
US7738291B2 (en) * 2007-03-12 2010-06-15 Micron Technology, Inc. Memory page boosting method, device and system
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US7606072B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop
US7606071B2 (en) * 2007-04-24 2009-10-20 Sandisk Corporation Compensating source voltage drop in non-volatile storage
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
US8239639B2 (en) * 2007-06-08 2012-08-07 Sandisk Technologies Inc. Method and apparatus for providing data type and host file information to a mass storage system
US8713283B2 (en) * 2007-06-08 2014-04-29 Sandisk Technologies Inc. Method of interfacing a host operating through a logical address space with a direct file storage medium
US9396103B2 (en) * 2007-06-08 2016-07-19 Sandisk Technologies Llc Method and system for storage address re-mapping for a memory device
US20080307156A1 (en) * 2007-06-08 2008-12-11 Sinclair Alan W System For Interfacing A Host Operating Through A Logical Address Space With A Direct File Storage Medium
US7969783B2 (en) * 2007-06-15 2011-06-28 Micron Technology, Inc. Memory with correlated resistance
US7508715B2 (en) 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7599224B2 (en) 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
DE102007030842B4 (de) * 2007-07-03 2015-05-21 Austriamicrosystems Ag Speicheranordnung und Verfahren zum Speichern
KR20090017270A (ko) * 2007-08-14 2009-02-18 삼성전자주식회사 멀티 비트 프로그래밍 장치 및 방법
CN101369455B (zh) * 2007-08-17 2010-12-01 中芯国际集成电路制造(上海)有限公司 降低氮化物只读存储器的编程干扰的方法
CN101369454B (zh) * 2007-08-17 2010-09-15 中芯国际集成电路制造(上海)有限公司 降低氮化物只读存储器的编程干扰的方法
US7818493B2 (en) * 2007-09-07 2010-10-19 Sandisk Corporation Adaptive block list management
US7719890B2 (en) 2007-09-12 2010-05-18 Sandisk Corporation Data protection for write abort
US20090088876A1 (en) * 2007-09-28 2009-04-02 Conley Kevin M Portable, digital media player and associated methods
US8631203B2 (en) 2007-12-10 2014-01-14 Microsoft Corporation Management of external memory functioning as virtual cache
US7978518B2 (en) 2007-12-21 2011-07-12 Mosaid Technologies Incorporated Hierarchical common source line structure in NAND flash memory
US8880483B2 (en) * 2007-12-21 2014-11-04 Sandisk Technologies Inc. System and method for implementing extensions to intelligently manage resources of a mass storage system
CN101471136B (zh) * 2007-12-26 2012-07-11 上海华虹集成电路有限责任公司 一种防止eeprom编程串扰的电路和方法
US7663932B2 (en) * 2007-12-27 2010-02-16 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US7755939B2 (en) * 2008-01-15 2010-07-13 Micron Technology, Inc. System and devices including memory resistant to program disturb and methods of using, making, and operating the same
US20090271562A1 (en) * 2008-04-25 2009-10-29 Sinclair Alan W Method and system for storage address re-mapping for a multi-bank memory device
US7719902B2 (en) 2008-05-23 2010-05-18 Sandisk Corporation Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
KR101491829B1 (ko) * 2008-08-14 2015-02-12 삼성전자주식회사 읽기 디스터번스를 방지하는 메모리 장치 및 그 방법
US8032707B2 (en) 2008-09-15 2011-10-04 Microsoft Corporation Managing cache data and metadata
US9032151B2 (en) 2008-09-15 2015-05-12 Microsoft Technology Licensing, Llc Method and system for ensuring reliability of cache data and metadata subsequent to a reboot
US7953774B2 (en) 2008-09-19 2011-05-31 Microsoft Corporation Aggregation of write traffic to a data store
US8700840B2 (en) 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
KR101793286B1 (ko) 2009-04-08 2017-11-02 샌디스크 테크놀로지스 엘엘씨 수직의 비트 라인들 및 단면 워드 라인 아키텍처를 가지는 재프로그래밍 가능한 메모리 요소들의 3차원 어레이
US7983065B2 (en) 2009-04-08 2011-07-19 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
US8199576B2 (en) * 2009-04-08 2012-06-12 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
US8351236B2 (en) 2009-04-08 2013-01-08 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8027195B2 (en) 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US7974124B2 (en) * 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
KR101028993B1 (ko) * 2009-06-30 2011-04-12 주식회사 하이닉스반도체 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
JP4913188B2 (ja) * 2009-09-18 2012-04-11 株式会社東芝 不揮発性半導体記憶装置
JP5044624B2 (ja) * 2009-09-25 2012-10-10 株式会社東芝 不揮発性半導体記憶装置
US8473669B2 (en) * 2009-12-07 2013-06-25 Sandisk Technologies Inc. Method and system for concurrent background and foreground operations in a non-volatile memory array
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8144512B2 (en) 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
JP2011170941A (ja) * 2010-02-22 2011-09-01 Fujitsu Semiconductor Ltd 半導体メモリおよびシステム
JP2011198437A (ja) * 2010-03-23 2011-10-06 Toshiba Corp 不揮発性半導体記憶装置
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
US8526237B2 (en) 2010-06-08 2013-09-03 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
US8547720B2 (en) 2010-06-08 2013-10-01 Sandisk 3D Llc Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
US8452911B2 (en) 2010-09-30 2013-05-28 Sandisk Technologies Inc. Synchronized maintenance operations in a multi-bank storage system
EP2731110B1 (de) 2010-12-14 2016-09-07 SanDisk Technologies LLC Architektur für dreidimensionalen nichtflüchtigen Speicher mit vertikalen Bitleitungen
US9227456B2 (en) 2010-12-14 2016-01-05 Sandisk 3D Llc Memories with cylindrical read/write stacks
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US8456911B2 (en) 2011-06-07 2013-06-04 Sandisk Technologies Inc. Intelligent shifting of read pass voltages for non-volatile storage
US8694719B2 (en) 2011-06-24 2014-04-08 Sandisk Technologies Inc. Controller, storage device, and method for power throttling memory operations
US8745369B2 (en) 2011-06-24 2014-06-03 SanDisk Technologies, Inc. Method and memory system for managing power based on semaphores and timers
US8743615B2 (en) 2011-08-22 2014-06-03 Sandisk Technologies Inc. Read compensation for partially programmed blocks of non-volatile storage
US8638606B2 (en) 2011-09-16 2014-01-28 Sandisk Technologies Inc. Substrate bias during program of non-volatile storage
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
KR101961324B1 (ko) 2012-05-09 2019-03-22 삼성전자주식회사 메모리 장치 및 메모리 장치의 파워 관리 방법
US9281029B2 (en) 2012-06-15 2016-03-08 Sandisk 3D Llc Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof
US8895437B2 (en) 2012-06-15 2014-11-25 Sandisk 3D Llc Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9318199B2 (en) * 2012-10-26 2016-04-19 Micron Technology, Inc. Partial page memory operations
US9465731B2 (en) 2012-12-31 2016-10-11 Sandisk Technologies Llc Multi-layer non-volatile memory system having multiple partitions in a layer
US8873284B2 (en) 2012-12-31 2014-10-28 Sandisk Technologies Inc. Method and system for program scheduling in a multi-layer memory
US9734911B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for asynchronous die operations in a non-volatile memory
US9223693B2 (en) 2012-12-31 2015-12-29 Sandisk Technologies Inc. Memory system having an unequal number of memory die on different control channels
US9734050B2 (en) 2012-12-31 2017-08-15 Sandisk Technologies Llc Method and system for managing background operations in a multi-layer memory
US9336133B2 (en) 2012-12-31 2016-05-10 Sandisk Technologies Inc. Method and system for managing program cycles including maintenance programming operations in a multi-layer memory
US9348746B2 (en) 2012-12-31 2016-05-24 Sandisk Technologies Method and system for managing block reclaim operations in a multi-layer memory
US8942043B2 (en) 2013-03-04 2015-01-27 Sandisk Technologies Inc. Non-volatile storage with process that reduces read disturb on end wordlines
US9064547B2 (en) 2013-03-05 2015-06-23 Sandisk 3D Llc 3D non-volatile memory having low-current cells and methods
US20140307504A1 (en) * 2013-04-12 2014-10-16 Winbond Electronics Corp. Data storage device, and fabrication and control methods thereof
US9123430B2 (en) 2013-06-14 2015-09-01 Sandisk 3D Llc Differential current sense amplifier and method for non-volatile memory
US8933516B1 (en) 2013-06-24 2015-01-13 Sandisk 3D Llc High capacity select switches for three-dimensional structures
US10083069B2 (en) * 2013-06-27 2018-09-25 Sandisk Technologies Llc Word line defect detection and handling for a data storage device
US8982617B1 (en) * 2013-11-14 2015-03-17 Sandisk Technologies Inc. Block closure techniques for a data storage device
US9229806B2 (en) 2013-11-14 2016-01-05 Sandisk Technologies Inc. Block closure techniques for a data storage device
US9165670B2 (en) 2013-11-14 2015-10-20 Sandisk Technologies Inc. Data retention detection techniques for a data storage device
US9230689B2 (en) * 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9123392B1 (en) 2014-03-28 2015-09-01 Sandisk 3D Llc Non-volatile 3D memory with cell-selectable word line decoding
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9349952B1 (en) 2014-12-08 2016-05-24 Sony Corporation Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes
US9449707B2 (en) * 2014-12-19 2016-09-20 Freescale Semiconductor, Inc. Systems and methods to mitigate program gate disturb in split-gate flash cell arrays
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9627088B2 (en) * 2015-02-25 2017-04-18 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US10157681B2 (en) 2015-09-14 2018-12-18 Sandisk Technologies Llc Programming of nonvolatile memory with verify level dependent on memory state and programming loop count
US10133490B2 (en) 2015-10-30 2018-11-20 Sandisk Technologies Llc System and method for managing extended maintenance scheduling in a non-volatile memory
US10042553B2 (en) 2015-10-30 2018-08-07 Sandisk Technologies Llc Method and system for programming a multi-layer non-volatile memory having a single fold data path
US10120613B2 (en) 2015-10-30 2018-11-06 Sandisk Technologies Llc System and method for rescheduling host and maintenance operations in a non-volatile memory
US9778855B2 (en) 2015-10-30 2017-10-03 Sandisk Technologies Llc System and method for precision interleaving of data writes in a non-volatile memory
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
KR20180085419A (ko) 2017-01-18 2018-07-27 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 스토리지 장치
JP2018156708A (ja) 2017-03-17 2018-10-04 東芝メモリ株式会社 記憶装置およびメモリコントローラ
KR20190007928A (ko) * 2017-07-14 2019-01-23 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
KR102374103B1 (ko) 2018-01-16 2022-03-14 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 소거 방법
US10878882B1 (en) * 2019-06-19 2020-12-29 Micron Technology, Inc. Systems and methods for performing dynamic on-chip calibration of memory control signals
KR20210015346A (ko) * 2019-08-01 2021-02-10 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
CN112201291B (zh) * 2020-09-11 2021-08-17 中天弘宇集成电路有限责任公司 Nor闪存电路及数据写入方法
WO2022256956A1 (en) 2021-06-07 2022-12-15 Yangtze Memory Technologies Co., Ltd. Methods of reducing program disturb by array source coupling in 3d nand memory devices

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855902A (en) 1985-07-01 1989-08-08 Honeywell, Inc. Microprocessor assisted data block transfer apparatus
KR890003488B1 (ko) 1986-06-30 1989-09-22 삼성전자 주식회사 데이터 전송회로
US5014242A (en) 1987-12-10 1991-05-07 Hitachi, Ltd. Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
JPH02246087A (ja) 1989-03-20 1990-10-01 Hitachi Ltd 半導体記憶装置ならびにその冗長方式及びレイアウト方式
EP0389203A3 (de) 1989-03-20 1993-05-26 Fujitsu Limited Halbleiterspeichergerät beinhaltend Information, die die Anwesenheit mangelhafter Speicherzellen anzeigt
US5537584A (en) 1989-06-13 1996-07-16 Hitachi Maxell, Ltd. Power instability control of a memory card and a data processing device therefor
US5046050A (en) 1990-04-10 1991-09-03 National Semiconductor Corporation Shared BiCMOS sense amplifier
US5148047A (en) 1990-06-11 1992-09-15 Motorola, Inc. CMOS bus driver circuit with improved speed
JPH04123471A (ja) * 1990-09-14 1992-04-23 Oki Electric Ind Co Ltd 半導体記憶装置のデータ書込みおよび消去方法
JP3242101B2 (ja) 1990-10-05 2001-12-25 三菱電機株式会社 半導体集積回路
JP2853407B2 (ja) 1991-10-09 1999-02-03 日本電気株式会社 半導体メモリ
US5260892A (en) 1991-11-21 1993-11-09 Sun Microsystems, Inc. High speed electrical signal interconnect structure
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5270964A (en) 1992-05-19 1993-12-14 Sun Microsystems, Inc. Single in-line memory module
US5561622A (en) 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
JP3364810B2 (ja) 1993-09-14 2003-01-08 三菱電機株式会社 半導体記憶装置
JPH07130163A (ja) 1993-11-01 1995-05-19 Matsushita Electron Corp 半導体メモリ
CA2137505C (en) 1993-12-09 1999-05-04 Young W. Lee Multi-memory access limiting circuit for multi-memory device
DE19523775C2 (de) * 1994-06-29 2001-12-06 Toshiba Kawasaki Kk Nichtflüchtige Halbleiterspeichervorrichtung
JP3277108B2 (ja) 1995-10-31 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｄｒａｍアレイ
US5692202A (en) 1995-12-29 1997-11-25 Intel Corporation System, apparatus, and method for managing power in a computer system
JPH09223389A (ja) 1996-02-15 1997-08-26 Mitsubishi Electric Corp 同期型半導体記憶装置
JPH09282900A (ja) 1996-04-11 1997-10-31 Oki Electric Ind Co Ltd メモリモジュール
JPH1011966A (ja) 1996-06-27 1998-01-16 Mitsubishi Electric Corp 同期型半導体記憶装置および同期型メモリモジュール
US5802395A (en) 1996-07-08 1998-09-01 International Business Machines Corporation High density memory modules with improved data bus performance
US5877975A (en) 1996-08-13 1999-03-02 Nexcom Technology, Inc. Insertable/removable digital memory apparatus and methods of operation thereof
JPH10134022A (ja) 1996-10-31 1998-05-22 Toshiba Corp 半導体集積回路
KR100187196B1 (ko) 1996-11-05 1999-03-20 김광호 불휘발성 반도체 메모리 장치
US5818764A (en) * 1997-02-06 1998-10-06 Macronix International Co., Ltd. Block-level wordline enablement to reduce negative wordline stress
US6345000B1 (en) * 1997-04-16 2002-02-05 Sandisk Corporation Flash memory permitting simultaneous read/write and erase operations in a single memory array
JPH10320988A (ja) 1997-05-23 1998-12-04 Sony Corp 半導体不揮発性記憶装置、そのデータプログラム方法、およびその製造方法
US6011710A (en) 1997-10-30 2000-01-04 Hewlett-Packard Company Capacitance reducing memory system, device and method
US5953215A (en) 1997-12-01 1999-09-14 Karabatsos; Chris Apparatus and method for improving computer memory speed and capacity
JPH11177071A (ja) * 1997-12-11 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
US6002632A (en) 1998-09-17 1999-12-14 Texas Instruments Incorporated Circuits, systems, and methods with a memory interface for augmenting precharge control
US5991202A (en) * 1998-09-24 1999-11-23 Advanced Micro Devices, Inc. Method for reducing program disturb during self-boosting in a NAND flash memory
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6208564B1 (en) * 1999-07-29 2001-03-27 Fujitsu Limited High voltage comparator
US6172909B1 (en) * 1999-08-09 2001-01-09 Advanced Micro Devices, Inc. Ramped gate technique for soft programming to tighten the Vt distribution
ATE337602T1 (de) * 2000-03-22 2006-09-15 Microchip Tech Inc Verbessertes programmierungsverfahren für eine speicherzelle
JP3679970B2 (ja) * 2000-03-28 2005-08-03 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US6278649B1 (en) * 2000-06-30 2001-08-21 Macronix International Co., Ltd. Bank selection structures for a memory array, including a flat cell ROM array
US6480419B2 (en) * 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
US6771536B2 (en) * 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
US20060072721A1 (en) * 2004-09-21 2006-04-06 Netomat, Inc. Mobile messaging system and method

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