DE60316171D1 - Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem - Google Patents

Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem

Info

Publication number
DE60316171D1
DE60316171D1 DE60316171T DE60316171T DE60316171D1 DE 60316171 D1 DE60316171 D1 DE 60316171D1 DE 60316171 T DE60316171 T DE 60316171T DE 60316171 T DE60316171 T DE 60316171T DE 60316171 D1 DE60316171 D1 DE 60316171D1
Authority
DE
Germany
Prior art keywords
memory element
contents
storage system
volatile storage
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60316171T
Other languages
English (en)
Other versions
DE60316171T2 (de
Inventor
Carlos J Gonzalez
Kevin M Conley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32230329&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60316171(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60316171D1 publication Critical patent/DE60316171D1/de
Publication of DE60316171T2 publication Critical patent/DE60316171T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036—Life time enhancement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
DE60316171T 2002-10-28 2003-10-09 Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem Expired - Lifetime DE60316171T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42217302P 2002-10-28 2002-10-28
US422173P 2002-10-28
PCT/US2003/032050 WO2004040586A1 (en) 2002-10-28 2003-10-09 Automated wear leveling in non-volatile storage systems

Publications (2)

Publication Number Publication Date
DE60316171D1 true DE60316171D1 (de) 2007-10-18
DE60316171T2 DE60316171T2 (de) 2008-05-29

Family

ID=32230329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60316171T Expired - Lifetime DE60316171T2 (de) 2002-10-28 2003-10-09 Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem

Country Status (9)

Country Link
US (2) US7120729B2 (de)
EP (1) EP1556868B1 (de)
JP (1) JP4518951B2 (de)
KR (2) KR101122511B1 (de)
CN (1) CN100483552C (de)
AT (1) ATE372578T1 (de)
AU (1) AU2003282544A1 (de)
DE (1) DE60316171T2 (de)
WO (1) WO2004040586A1 (de)

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* Cited by examiner, † Cited by third party
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CN100483552C (zh) 2009-04-29
KR20110093916A (ko) 2011-08-18
AU2003282544A1 (en) 2004-05-25
US20070083698A1 (en) 2007-04-12
KR20050083850A (ko) 2005-08-26
CN1720590A (zh) 2006-01-11
DE60316171T2 (de) 2008-05-29
US7120729B2 (en) 2006-10-10
KR101174308B1 (ko) 2012-08-16
WO2004040586A1 (en) 2004-05-13
US7552272B2 (en) 2009-06-23
EP1556868B1 (de) 2007-09-05
JP2006504201A (ja) 2006-02-02
KR101122511B1 (ko) 2012-03-15
ATE372578T1 (de) 2007-09-15
US20040083335A1 (en) 2004-04-29
EP1556868A1 (de) 2005-07-27
JP4518951B2 (ja) 2010-08-04

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