DE60327257D1 - Strombegrenztes latch - Google Patents

Strombegrenztes latch

Info

Publication number
DE60327257D1
DE60327257D1 DE60327257T DE60327257T DE60327257D1 DE 60327257 D1 DE60327257 D1 DE 60327257D1 DE 60327257 T DE60327257 T DE 60327257T DE 60327257 T DE60327257 T DE 60327257T DE 60327257 D1 DE60327257 D1 DE 60327257D1
Authority
DE
Germany
Prior art keywords
latch
current
data changes
circuit
supplies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60327257T
Other languages
English (en)
Inventor
Chi-Ming Wang
Kuo-Lung Chen
Shouchang Tsao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60327257D1 publication Critical patent/DE60327257D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
DE60327257T 2002-12-06 2003-12-01 Strombegrenztes latch Expired - Lifetime DE60327257D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/313,738 US7339822B2 (en) 2002-12-06 2002-12-06 Current-limited latch
PCT/US2003/038328 WO2004053883A2 (en) 2002-12-06 2003-12-01 Current-limited latch

Publications (1)

Publication Number Publication Date
DE60327257D1 true DE60327257D1 (de) 2009-05-28

Family

ID=32468331

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60327257T Expired - Lifetime DE60327257D1 (de) 2002-12-06 2003-12-01 Strombegrenztes latch

Country Status (10)

Country Link
US (2) US7339822B2 (de)
EP (1) EP1586096B1 (de)
JP (1) JP4603892B2 (de)
KR (1) KR101030680B1 (de)
CN (1) CN100552808C (de)
AT (1) ATE429014T1 (de)
AU (1) AU2003297625A1 (de)
DE (1) DE60327257D1 (de)
TW (1) TWI320573B (de)
WO (1) WO2004053883A2 (de)

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US8995188B2 (en) * 2013-04-17 2015-03-31 Micron Technology, Inc. Sharing support circuitry in a memory
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FR3012672B1 (fr) 2013-10-31 2017-04-14 Stmicroelectronics Rousset Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees
FR3017746B1 (fr) 2014-02-18 2016-05-27 Stmicroelectronics Rousset Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne
US10176880B1 (en) 2017-07-01 2019-01-08 Intel Corporation Selective body reset operation for three dimensional (3D) NAND memory
CN107727923A (zh) * 2017-08-29 2018-02-23 宁德时代新能源科技股份有限公司 高压采样电路和电池管理系统
US11386961B2 (en) * 2019-12-20 2022-07-12 Sandisk Technologies Llc Centralized fixed rate serializer and deserializer for bad column management in non-volatile memory

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US7339822B2 (en) 2002-12-06 2008-03-04 Sandisk Corporation Current-limited latch
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Also Published As

Publication number Publication date
WO2004053883A2 (en) 2004-06-24
JP4603892B2 (ja) 2010-12-22
TW200421350A (en) 2004-10-16
KR101030680B1 (ko) 2011-04-22
CN1720585A (zh) 2006-01-11
AU2003297625A1 (en) 2004-06-30
WO2004053883A3 (en) 2005-03-17
AU2003297625A8 (en) 2004-06-30
KR20050098836A (ko) 2005-10-12
EP1586096B1 (de) 2009-04-15
JP2006509327A (ja) 2006-03-16
US20040109354A1 (en) 2004-06-10
US20050101236A1 (en) 2005-05-12
US7319630B2 (en) 2008-01-15
TWI320573B (en) 2010-02-11
ATE429014T1 (de) 2009-05-15
US7339822B2 (en) 2008-03-04
EP1586096A2 (de) 2005-10-19
CN100552808C (zh) 2009-10-21

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