DE60327527D1 - Ein verbessertes feldprogrammierbares Gate-Array - Google Patents

Ein verbessertes feldprogrammierbares Gate-Array

Info

Publication number
DE60327527D1
DE60327527D1 DE60327527T DE60327527T DE60327527D1 DE 60327527 D1 DE60327527 D1 DE 60327527D1 DE 60327527 T DE60327527 T DE 60327527T DE 60327527 T DE60327527 T DE 60327527T DE 60327527 D1 DE60327527 D1 DE 60327527D1
Authority
DE
Germany
Prior art keywords
programmable gate
gate array
field programmable
improved field
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60327527T
Other languages
English (en)
Inventor
Fabio Pellizzer
Sandre Guido De
Roberto Bez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60327527D1 publication Critical patent/DE60327527D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
DE60327527T 2003-09-23 2003-09-23 Ein verbessertes feldprogrammierbares Gate-Array Expired - Lifetime DE60327527D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03021455A EP1519489B1 (de) 2003-09-23 2003-09-23 Ein verbessertes feldprogrammierbares Gate-Array

Publications (1)

Publication Number Publication Date
DE60327527D1 true DE60327527D1 (de) 2009-06-18

Family

ID=34178479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60327527T Expired - Lifetime DE60327527D1 (de) 2003-09-23 2003-09-23 Ein verbessertes feldprogrammierbares Gate-Array

Country Status (3)

Country Link
US (1) US7307451B2 (de)
EP (1) EP1519489B1 (de)
DE (1) DE60327527D1 (de)

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JP2004287475A (ja) * 2003-01-27 2004-10-14 Fujitsu Ten Ltd 電子制御装置および電子駆動装置
US7499315B2 (en) * 2003-06-11 2009-03-03 Ovonyx, Inc. Programmable matrix array with chalcogenide material
US7135886B2 (en) * 2004-09-20 2006-11-14 Klp International, Ltd. Field programmable gate arrays using both volatile and nonvolatile memory cell properties and their control
US20060256608A1 (en) * 2005-05-11 2006-11-16 Spansion Llc Resistive memory device with improved data retention and reduced power
US7368789B1 (en) 2005-06-13 2008-05-06 Actel Corporation Non-volatile programmable memory cell and array for programmable logic array
DE102005030142B3 (de) * 2005-06-28 2006-12-21 Infineon Technologies Ag Bistabile Kippstufe mit nichtflüchtiger Zustandsspeicherung
US7746682B2 (en) 2005-11-03 2010-06-29 Agata Logic Inc. SEU hardened latches and memory cells using programmable resistance devices
US7511532B2 (en) * 2005-11-03 2009-03-31 Cswitch Corp. Reconfigurable logic structures
US7494849B2 (en) 2005-11-03 2009-02-24 Cswitch Inc. Methods for fabricating multi-terminal phase change devices
US7675765B2 (en) 2005-11-03 2010-03-09 Agate Logic, Inc. Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM
US8183551B2 (en) * 2005-11-03 2012-05-22 Agale Logic, Inc. Multi-terminal phase change devices
TWI597724B (zh) * 2005-12-24 2017-09-01 奧佛尼克公司 具硫屬化物材料之可程式化矩陣陣列
DE102006016514A1 (de) * 2006-04-07 2007-10-18 Infineon Technologies Ag Schaltung und Verfahren zum Konfigurieren einer Schaltung
US8264667B2 (en) * 2006-05-04 2012-09-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using interferometric and other exposure
US8161227B1 (en) 2006-10-30 2012-04-17 Siliconsystems, Inc. Storage subsystem capable of programming field-programmable devices of a target computer system
US7742336B2 (en) * 2006-11-01 2010-06-22 Gumbo Logic, Inc. Trap-charge non-volatile switch connector for programmable logic
WO2008062164A2 (en) * 2006-11-20 2008-05-29 Codian Limited Hardware architecure for video conferencing
US7990761B2 (en) * 2008-03-31 2011-08-02 Ovonyx, Inc. Immunity of phase change material to disturb in the amorphous phase
US8138791B1 (en) * 2010-01-27 2012-03-20 Altera Corporation Stressed transistors with reduced leakage
US8532100B2 (en) 2010-10-19 2013-09-10 Cisco Technology, Inc. System and method for data exchange in a heterogeneous multiprocessor system
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
KR101802945B1 (ko) 2011-06-27 2017-12-29 삼성전자주식회사 논리 장치 및 이를 포함하는 반도체 패키지
US10236888B2 (en) * 2016-03-29 2019-03-19 Arm Ltd. Correlated electron switch device
US10199105B2 (en) 2016-05-12 2019-02-05 Crossbar, Inc. Non-volatile resistive memory configuration cell for field programmable gate array

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CA2010122A1 (en) * 1989-06-21 1990-12-21 Makoto Sakamoto Integrated circuit including programmable circuit
US5371422A (en) * 1991-09-03 1994-12-06 Altera Corporation Programmable logic device having multiplexers and demultiplexers randomly connected to global conductors for interconnections between logic elements
US5353248A (en) * 1992-04-14 1994-10-04 Altera Corporation EEPROM-backed FIFO memory
US6002268A (en) * 1993-01-08 1999-12-14 Dynachip Corporation FPGA with conductors segmented by active repeaters
US6130550A (en) * 1993-01-08 2000-10-10 Dynalogic Scaleable padframe interface circuit for FPGA yielding improved routability and faster chip layout
US5440182A (en) * 1993-10-22 1995-08-08 The Board Of Trustees Of The Leland Stanford Junior University Dynamic logic interconnect speed-up circuit
US5581501A (en) * 1995-08-17 1996-12-03 Altera Corporation Nonvolatile SRAM cells and cell arrays
US6029236A (en) * 1997-01-28 2000-02-22 Altera Corporation Field programmable gate array with high speed SRAM based configurable function block configurable as high performance logic or block of SRAM
US5966027A (en) * 1997-09-30 1999-10-12 Cypress Semiconductor Corp. Symmetric logic block input/output scheme
US6097988A (en) * 1998-02-10 2000-08-01 Advanced Micro Devices, Inc. Logic system and method employing multiple configurable logic blocks and capable of implementing a state machine using a minimum amount of configurable logic
US6058041A (en) * 1998-12-23 2000-05-02 Honeywell Inc. SEU hardening circuit
JP3754221B2 (ja) * 1999-03-05 2006-03-08 ローム株式会社 マルチチップ型半導体装置
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
US6594192B1 (en) * 2000-08-31 2003-07-15 Stmicroelectronics, Inc. Integrated volatile and non-volatile memory
US6356478B1 (en) * 2000-12-21 2002-03-12 Actel Corporation Flash based control for field programmable gate array
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
US20030071651A1 (en) * 2001-09-13 2003-04-17 Extensil, Inc. Memory controlled signal steering and wave shaping circuit as a universal connector
AU2003220785A1 (en) * 2002-04-10 2003-10-20 Matsushita Electric Industrial Co., Ltd. Non-volatile flip-flop

Also Published As

Publication number Publication date
EP1519489B1 (de) 2009-05-06
US7307451B2 (en) 2007-12-11
EP1519489A1 (de) 2005-03-30
US20050062497A1 (en) 2005-03-24

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