DE60334828D1 - Verfahren und vorrichtung zum löschen von flash-speicher - Google Patents

Verfahren und vorrichtung zum löschen von flash-speicher

Info

Publication number
DE60334828D1
DE60334828D1 DE60334828T DE60334828T DE60334828D1 DE 60334828 D1 DE60334828 D1 DE 60334828D1 DE 60334828 T DE60334828 T DE 60334828T DE 60334828 T DE60334828 T DE 60334828T DE 60334828 D1 DE60334828 D1 DE 60334828D1
Authority
DE
Germany
Prior art keywords
flash memory
deleting
polarity
magnitude
deleting flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60334828T
Other languages
English (en)
Inventor
Andrei Mihnea
Chun Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60334828D1 publication Critical patent/DE60334828D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE60334828T 2002-05-29 2003-05-29 Verfahren und vorrichtung zum löschen von flash-speicher Expired - Lifetime DE60334828D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/159,885 US6795348B2 (en) 2002-05-29 2002-05-29 Method and apparatus for erasing flash memory
PCT/US2003/016856 WO2003102962A2 (en) 2002-05-29 2003-05-29 Method and apparatus for erasing flash memory

Publications (1)

Publication Number Publication Date
DE60334828D1 true DE60334828D1 (de) 2010-12-16

Family

ID=29583053

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60334828T Expired - Lifetime DE60334828D1 (de) 2002-05-29 2003-05-29 Verfahren und vorrichtung zum löschen von flash-speicher

Country Status (10)

Country Link
US (15) US6795348B2 (de)
EP (1) EP1552529B1 (de)
JP (1) JP4359560B2 (de)
KR (1) KR100650088B1 (de)
CN (1) CN100495574C (de)
AT (1) ATE487219T1 (de)
AU (1) AU2003247433A1 (de)
DE (1) DE60334828D1 (de)
SG (1) SG152042A1 (de)
WO (1) WO2003102962A2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
US6862216B1 (en) * 2004-06-29 2005-03-01 National Semiconductor Corporation Non-volatile memory cell with gated diode and MOS transistor and method for using such cell
US7468299B2 (en) * 2005-08-04 2008-12-23 Macronix International Co., Ltd. Non-volatile memory cells and methods of manufacturing the same
US7236404B2 (en) * 2005-08-24 2007-06-26 Macronix International Co. Ltd. Structures and methods for enhancing erase uniformity in an NROM array
US20070047327A1 (en) * 2005-08-31 2007-03-01 Micron Technology, Inc. Erase method for flash memory
US7567458B2 (en) * 2005-09-26 2009-07-28 Silicon Storage Technology, Inc. Flash memory array having control/decode circuitry for disabling top gates of defective memory cells
US7151712B1 (en) * 2005-10-19 2006-12-19 Winbond Electronics Corp. Row decoder with low gate induce drain leakage current
KR100704021B1 (ko) * 2005-11-08 2007-04-04 삼성전자주식회사 신뢰성을 향상시키는 불휘발성 반도체 메모리 장치의데이터 소거방법
US7483311B2 (en) * 2006-02-07 2009-01-27 Micron Technology, Inc. Erase operation in a flash memory device
US7277357B1 (en) * 2006-06-05 2007-10-02 Micron Technology, Inc. Method and apparatus for reducing oscillation in synchronous circuits
KR100842401B1 (ko) * 2006-10-18 2008-07-01 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7649783B2 (en) * 2007-01-25 2010-01-19 Micron Technology, Inc. Delayed activation of selected wordlines in memory
US7778086B2 (en) 2007-01-25 2010-08-17 Micron Technology, Inc. Erase operation control sequencing apparatus, systems, and methods
US7656740B2 (en) * 2007-02-05 2010-02-02 Micron Technology, Inc. Wordline voltage transfer apparatus, systems, and methods
KR101348173B1 (ko) * 2007-05-25 2014-01-08 삼성전자주식회사 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템
US7701780B2 (en) * 2007-05-31 2010-04-20 Micron Technology, Inc. Non-volatile memory cell healing
US20090003065A1 (en) * 2007-06-26 2009-01-01 Micron Technology, Inc. Flash cell with improved program disturb
US7619931B2 (en) * 2007-06-26 2009-11-17 Micron Technology, Inc. Program-verify method with different read and verify pass-through voltages
US7916543B2 (en) * 2007-10-22 2011-03-29 Micron Technology, Inc. Memory cell operation
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US7924623B2 (en) * 2008-05-27 2011-04-12 Micron Technology, Inc. Method for memory cell erasure with a programming monitor of reference cells
US7995384B2 (en) 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
KR101478554B1 (ko) * 2008-10-02 2015-01-06 삼성전자 주식회사 오버 슈트 전압의 산출 방법 및 그를 이용한 게이트 절연막열화분석방법
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8169833B2 (en) * 2009-10-01 2012-05-01 Micron Technology, Inc. Partitioning process to improve memory cell retention
CN102034539A (zh) * 2010-10-25 2011-04-27 上海宏力半导体制造有限公司 纳米晶体器件编程/擦除的方法
US8553463B1 (en) 2011-03-21 2013-10-08 Lattice Semiconductor Corporation Voltage discharge circuit having divided discharge current
US8829588B2 (en) * 2011-07-26 2014-09-09 Synopsys, Inc. NVM bitcell with a replacement control gate and additional floating gate
US8743628B2 (en) 2011-08-08 2014-06-03 Micron Technology, Inc. Line driver circuits, methods, and apparatuses
US9134602B2 (en) 2013-07-29 2015-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing an extreme ultraviolet (EUV) mask and the mask manufactured therefrom
CA2955398A1 (en) 2014-08-21 2016-02-25 W.C. Bradley Co. High performance electric grill, method, and heat radiating module
US9728278B2 (en) 2014-10-24 2017-08-08 Micron Technology, Inc. Threshold voltage margin analysis
US9349447B1 (en) * 2015-03-02 2016-05-24 HGST, Inc. Controlling coupling in large cross-point memory arrays
US10453535B2 (en) * 2015-10-26 2019-10-22 Intel Corporation Segmented erase in memory
US10164009B1 (en) 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10680006B2 (en) * 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
US10796729B2 (en) 2019-02-05 2020-10-06 Micron Technology, Inc. Dynamic allocation of a capacitive component in a memory device
US11194726B2 (en) 2019-02-25 2021-12-07 Micron Technology, Inc. Stacked memory dice for combined access operations
KR20210028307A (ko) 2019-09-03 2021-03-12 삼성전자주식회사 반도체 장치 및 이의 동작 방법

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2991195A (en) * 1960-02-11 1961-07-04 Lockheed Aircraft Corp Method of metallizing holes and cavities with a refractory metal
US4016588A (en) * 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
US4384349A (en) * 1979-10-01 1983-05-17 Texas Instruments Incorporated High density electrically erasable floating gate dual-injection programmable memory device
US4503524A (en) * 1980-06-02 1985-03-05 Texas Instruments Incorporated Electrically erasable dual-injector floating gate programmable memory device
US4384356A (en) * 1981-04-03 1983-05-17 Britsol Babcock Inc. Wide band modem for high speed data transmission
JPS644077A (en) * 1987-06-25 1989-01-09 Mitsubishi Electric Corp Memory cell
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
JP3204666B2 (ja) * 1990-11-21 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
US5265059A (en) * 1991-05-10 1993-11-23 Intel Corporation Circuitry and method for discharging a drain of a cell of a non-volatile semiconductor memory
JPH05102438A (ja) * 1991-10-04 1993-04-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH06103798A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd 半導体記憶装置
US5544103A (en) * 1992-03-03 1996-08-06 Xicor, Inc. Compact page-erasable eeprom non-volatile memory
DE4311358C2 (de) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
EP0596198B1 (de) * 1992-07-10 2000-03-29 Sony Corporation Flash-EPROM mit Löschprüfung und Architektur zum Adresszerhacken
US5357463A (en) * 1992-11-17 1994-10-18 Micron Semiconductor, Inc. Method for reverse programming of a flash EEPROM
US5399928A (en) * 1993-05-28 1995-03-21 Macronix International Co., Ltd. Negative voltage generator for flash EPROM design
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
US5477499A (en) * 1993-10-13 1995-12-19 Advanced Micro Devices, Inc. Memory architecture for a three volt flash EEPROM
KR970003845B1 (ko) * 1993-10-28 1997-03-22 금성일렉트론 주식회사 이이피롬 프래쉬 메모리 셀, 메모리 디바이스 및 그 제조방법
US5521867A (en) * 1993-12-01 1996-05-28 Advanced Micro Devices, Inc. Adjustable threshold voltage conversion circuit
DE69523743T2 (de) * 1994-03-03 2002-08-01 Rohm Corp Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung
FR2718289B1 (fr) * 1994-03-30 1996-08-02 Sgs Thomson Microelectronics Cellule mémoire électriquement programmable.
EP0690452A3 (de) * 1994-06-28 1999-01-07 Advanced Micro Devices, Inc. Elektrisch löschbarer Speicher und Löschverfahren
JPH08148580A (ja) * 1994-08-01 1996-06-07 Seiko Instr Inc 半導体集積回路装置
US5485423A (en) * 1994-10-11 1996-01-16 Advanced Micro Devices, Inc. Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
US5808937A (en) * 1994-12-16 1998-09-15 National Semiconductor Corporation Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges
US5491657A (en) * 1995-02-24 1996-02-13 Advanced Micro Devices, Inc. Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
US5650964A (en) * 1995-06-07 1997-07-22 Advanced Micro Devices, Inc. Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge
JP3878681B2 (ja) * 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US5576992A (en) * 1995-08-30 1996-11-19 Texas Instruments Incorporated Extended-life method for soft-programming floating-gate memory cells
US5781477A (en) * 1996-02-23 1998-07-14 Micron Quantum Devices, Inc. Flash memory system having fast erase operation
JP2833585B2 (ja) * 1996-05-17 1998-12-09 日本電気株式会社 半導体不揮発性記憶装置
KR100192584B1 (ko) * 1996-06-05 1999-06-15 윤종용 불휘발성 반도체 메모리 장치의 소거 방법
US6381670B1 (en) * 1997-01-07 2002-04-30 Aplus Flash Technology, Inc. Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation
JPH1055689A (ja) * 1996-08-13 1998-02-24 Denso Corp フラッシュメモリの消去方法
JPH1083689A (ja) * 1996-09-10 1998-03-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5852306A (en) * 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
JP2000504504A (ja) * 1997-02-12 2000-04-11 ヒュンダイ エレクトロニクス アメリカ インコーポレイテッド 不揮発性メモリ構造
US6097632A (en) * 1997-04-18 2000-08-01 Micron Technology, Inc. Source regulation circuit for an erase operation of flash memory
US5726933A (en) * 1997-05-15 1998-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
JP3171235B2 (ja) * 1997-05-29 2001-05-28 日本電気株式会社 不揮発性半導体メモリ
US5862078A (en) * 1997-08-11 1999-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mixed mode erase method to improve flash eeprom write/erase threshold closure
JP3914340B2 (ja) * 1997-08-30 2007-05-16 株式会社ハイニックスセミコンダクター フラッシュメモリ装置
US5838618A (en) * 1997-09-11 1998-11-17 Taiwan Semiconductor Manufacturing Company Ltd. Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure
US5949717A (en) * 1997-09-12 1999-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method to improve flash EEPROM cell write/erase threshold voltage closure
US5903499A (en) * 1997-09-12 1999-05-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase
US5828605A (en) * 1997-10-14 1998-10-27 Taiwan Semiconductor Manufacturing Company Ltd. Snapback reduces the electron and hole trapping in the tunneling oxide of flash EEPROM
US6055183A (en) * 1997-10-24 2000-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Erase method of flash EEPROM by using snapback characteristic
KR100481841B1 (ko) * 1997-11-25 2005-08-25 삼성전자주식회사 음의고전압을방전시키기위한회로를구비한플래시메모리장치
US6026026A (en) * 1997-12-05 2000-02-15 Hyundai Electronics America, Inc. Self-convergence of post-erase threshold voltages in a flash memory cell using transient response
US6243299B1 (en) * 1998-02-27 2001-06-05 Micron Technology, Inc. Flash memory system having fast erase operation
FR2776820B1 (fr) * 1998-03-24 2000-05-26 Sgs Thomson Microelectronics Memoire a grille flottante electriquement effacable organisee en mots
US6055184A (en) * 1998-09-02 2000-04-25 Texas Instruments Incorporated Semiconductor memory device having programmable parallel erase operation
US6049484A (en) * 1998-09-10 2000-04-11 Taiwan Semiconductor Manufacturing Company Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase
US6064595A (en) * 1998-12-23 2000-05-16 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof
KR100301506B1 (ko) * 1998-12-28 2001-11-30 구자홍 리니어압축기의오일공급장치
US6049486A (en) * 1999-01-04 2000-04-11 Taiwan Semiconductor Manufacturing Company Triple mode erase scheme for improving flash EEPROM cell threshold voltage (VT) cycling closure effect
JP3613072B2 (ja) * 1999-06-02 2005-01-26 株式会社デンソー 不揮発性半導体メモリの電荷保持寿命評価方法
JP3694422B2 (ja) * 1999-06-21 2005-09-14 シャープ株式会社 ロウデコーダ回路
US6172914B1 (en) * 1999-08-13 2001-01-09 Advanced Micro Devices, Inc. Concurrent erase verify scheme for flash memory applications
US6236608B1 (en) 1999-08-16 2001-05-22 Alliance Semiconductor Technique to improve the source leakage of flash EPROM cells during source erase
US6243298B1 (en) * 1999-08-19 2001-06-05 Azalea Microelectronics Corporation Non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regions
US6122201A (en) * 1999-10-20 2000-09-19 Taiwan Semiconductor Manufacturing Company Clipped sine wave channel erase method to reduce oxide trapping charge generation rate of flash EEPROM
KR100319558B1 (ko) * 1999-11-01 2002-01-05 윤종용 읽기 시간을 줄일 수 있는 불휘발성 반도체 메모리 장치
US6285588B1 (en) * 1999-12-01 2001-09-04 Advanced Micro Devices, Inc. Erase scheme to tighten the threshold voltage distribution of EEPROM flash memory cells
US6160740A (en) * 1999-12-17 2000-12-12 Advanced Micro Devices, Inc. Method to provide a reduced constant E-field during erase of EEPROMs for reliability improvement
US6518122B1 (en) * 1999-12-17 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable flash EEPROM
US6485588B1 (en) * 2000-01-20 2002-11-26 Trw Inc. Autoignition material additive
US6563741B2 (en) * 2001-01-30 2003-05-13 Micron Technology, Inc. Flash memory device and method of erasing
US6456533B1 (en) * 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
US6671208B2 (en) * 2001-07-27 2003-12-30 Sharp Kabushiki Kaisha Nonvolatile semiconductor storage device with limited consumption current during erasure and erase method therefor
JP3648185B2 (ja) * 2001-09-13 2005-05-18 マクロニクス インターナショナル カンパニイ リミテッド フラッシュ・イーピーロム集積回路におけるデータ・パターンをプログラムする方法
US6515909B1 (en) * 2001-10-05 2003-02-04 Micron Technology Inc. Flash memory device with a variable erase pulse
JP2004072060A (ja) * 2001-11-22 2004-03-04 Innotech Corp トランジスタとそれを用いた半導体メモリ、およびトランジスタの駆動方法
US6714458B2 (en) * 2002-02-11 2004-03-30 Micron Technology, Inc. High voltage positive and negative two-phase discharge system and method for channel erase in flash memory devices
US6784480B2 (en) * 2002-02-12 2004-08-31 Micron Technology, Inc. Asymmetric band-gap engineered nonvolatile memory device
US6614693B1 (en) 2002-03-19 2003-09-02 Taiwan Semiconductor Manufacturing Company Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
US6894931B2 (en) * 2002-06-20 2005-05-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR20040008526A (ko) * 2002-07-18 2004-01-31 주식회사 하이닉스반도체 플래시 메모리 셀의 소거 방법
JP4086583B2 (ja) * 2002-08-08 2008-05-14 シャープ株式会社 不揮発性半導体メモリ装置およびデータ書き込み制御方法
US6829166B2 (en) * 2002-09-13 2004-12-07 Ememory Technology Inc. Method for controlling a non-volatile dynamic random access memory
US6903407B1 (en) * 2003-10-14 2005-06-07 Advanced Micro Devices, Inc. Non volatile charge trapping dielectric memory cell structure with gate hole injection erase

Also Published As

Publication number Publication date
WO2003102962A2 (en) 2003-12-11
WO2003102962A3 (en) 2004-05-13
US20060007750A1 (en) 2006-01-12
EP1552529A2 (de) 2005-07-13
CN100495574C (zh) 2009-06-03
US20040233751A1 (en) 2004-11-25
US20050286314A1 (en) 2005-12-29
US20040233762A1 (en) 2004-11-25
US7277326B2 (en) 2007-10-02
CN1672217A (zh) 2005-09-21
US7272044B2 (en) 2007-09-18
US20060007743A1 (en) 2006-01-12
US20050286315A1 (en) 2005-12-29
US20060007744A1 (en) 2006-01-12
US6795348B2 (en) 2004-09-21
KR100650088B1 (ko) 2006-11-27
EP1552529B1 (de) 2010-11-03
US20040233743A1 (en) 2004-11-25
US7215572B2 (en) 2007-05-08
US7099220B2 (en) 2006-08-29
US7203098B2 (en) 2007-04-10
KR20050013999A (ko) 2005-02-05
US7057932B2 (en) 2006-06-06
US7099195B2 (en) 2006-08-29
US20050286313A1 (en) 2005-12-29
US20060007746A1 (en) 2006-01-12
ATE487219T1 (de) 2010-11-15
US7277327B2 (en) 2007-10-02
US7046557B2 (en) 2006-05-16
JP4359560B2 (ja) 2009-11-04
US20060067128A1 (en) 2006-03-30
US20060007749A1 (en) 2006-01-12
US7277328B2 (en) 2007-10-02
US20060007748A1 (en) 2006-01-12
US7280395B2 (en) 2007-10-09
AU2003247433A1 (en) 2003-12-19
JP2005527933A (ja) 2005-09-15
US7259996B2 (en) 2007-08-21
US7068543B2 (en) 2006-06-27
SG152042A1 (en) 2009-05-29
US20060007747A1 (en) 2006-01-12
US20030223272A1 (en) 2003-12-04
US7200048B2 (en) 2007-04-03

Similar Documents

Publication Publication Date Title
DE60334828D1 (de) Verfahren und vorrichtung zum löschen von flash-speicher
DE60100752D1 (de) Prüfungsschaltung zum trimmen von referenzzellen
GB2431027A (en) Method of improving erase voltage distribution for a flash memory array having dummy wordlines
DE60111608D1 (de) Verfahren und vorrichtung zum elektrischen heizen einer zusatzbohle für einen asphaltfertiger
DE60306741D1 (de) Brennstoffzellensteuersystem und verfahren
WO2003019565A3 (en) Non-volatile memory with block erase
DE60302275D1 (de) Verfahren und Vorrichtung zum mischen von Gasen
DE60309018D1 (de) Gerät zum setzen von wundklammern sowie wunddichtungsmasse
DE60325501D1 (de) Brennstoffzellensysteme und zugehöriges verfahren
DE602004011288D1 (de) Vorrichtung zum Anschliessen von Kabeln sowie Verfahren
ATE524811T1 (de) Verfahren und system zum programmieren und sperren von nichtflüchtigen speicherzellen mit mehreren ebenen
TW200625315A (en) Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device
WO2002061759A3 (en) Flash memory device and method of erasing
DE60314160D1 (de) Verfahren und vorrichtung zum austausch von unterirdischen rohren
DE50201467D1 (de) Einrichtung und verfahren zum zuführen von gegurteten elektrischen bauteilen
DE60302076D1 (de) Verbindungsvorrichtung mit variabler Kapazität und Verfahren zum Einstellen von Verbindungen variabler Kapazität
TW200601344A (en) Floating gate nonvolatile memory circuits and methods
TW200620295A (en) Flash memory unit and method of programming a flash memory device
ATA3482002A (de) Verfahren zum nassbehandeln von scheibenförmigen gegenständen
DE60324725D1 (de) Verfahren und Speicherstrukturen mit Tunnelübergangsanordnung als Bedienungselement
AU2003303724A8 (en) Method and apparatus for emulating an eeprom using non-volatile floating gate memory cells
DE60305744D1 (de) Verfahren zum elektrochemischen nachweis und regelung von inorganischen schichtablagerungen
DE60222349D1 (de) Verfahren und Anordnung zum Schreiben von Speicherzellen
DE60322196D1 (de) Vorrichtung und verfahren zum treiben von tieren in einem länglichen korridorabschnitt
DE602004027642D1 (de) Verfahren und system zum verifizieren von spannung in einem elektrischen system