DE60337027D1 - Transistoren mit bedeckten p-typ-schichten neben der sourcezone und herstellungsverfahren dafür - Google Patents
Transistoren mit bedeckten p-typ-schichten neben der sourcezone und herstellungsverfahren dafürInfo
- Publication number
- DE60337027D1 DE60337027D1 DE60337027T DE60337027T DE60337027D1 DE 60337027 D1 DE60337027 D1 DE 60337027D1 DE 60337027 T DE60337027 T DE 60337027T DE 60337027 T DE60337027 T DE 60337027T DE 60337027 D1 DE60337027 D1 DE 60337027D1
- Authority
- DE
- Germany
- Prior art keywords
- source
- transistors
- covered
- manufacturing
- type conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/304,272 US6956239B2 (en) | 2002-11-26 | 2002-11-26 | Transistors having buried p-type layers beneath the source region |
PCT/US2003/031334 WO2004049454A1 (en) | 2002-11-26 | 2003-10-02 | Transistors having buried p-type layers beneath the source region and methods of fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60337027D1 true DE60337027D1 (de) | 2011-06-16 |
Family
ID=32325171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60337027T Expired - Lifetime DE60337027D1 (de) | 2002-11-26 | 2003-10-02 | Transistoren mit bedeckten p-typ-schichten neben der sourcezone und herstellungsverfahren dafür |
Country Status (11)
Country | Link |
---|---|
US (2) | US6956239B2 (de) |
EP (1) | EP1565946B1 (de) |
JP (2) | JP2006507683A (de) |
KR (1) | KR20050086758A (de) |
CN (1) | CN100517761C (de) |
AT (1) | ATE508477T1 (de) |
AU (1) | AU2003277252A1 (de) |
CA (1) | CA2502485A1 (de) |
DE (1) | DE60337027D1 (de) |
TW (1) | TWI329927B (de) |
WO (1) | WO2004049454A1 (de) |
Families Citing this family (72)
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US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
JP4009106B2 (ja) * | 2001-12-27 | 2007-11-14 | 浜松ホトニクス株式会社 | 半導体受光素子、及びその製造方法 |
JP4109159B2 (ja) * | 2003-06-13 | 2008-07-02 | 浜松ホトニクス株式会社 | 半導体受光素子 |
WO2005015642A1 (ja) * | 2003-08-08 | 2005-02-17 | Sanken Electric Co., Ltd. | 半導体装置及びその製造方法 |
US20050139838A1 (en) * | 2003-12-26 | 2005-06-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US7230274B2 (en) | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
WO2005114746A1 (en) * | 2004-05-21 | 2005-12-01 | Nanyang Technological University | Novel structures of silicon carbide metal semiconductor field effect transistors for high voltage and high power applications |
US20050275037A1 (en) * | 2004-06-12 | 2005-12-15 | Chung Shine C | Semiconductor devices with high voltage tolerance |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US7345309B2 (en) * | 2004-08-31 | 2008-03-18 | Lockheed Martin Corporation | SiC metal semiconductor field-effect transistor |
US20060091606A1 (en) * | 2004-10-28 | 2006-05-04 | Gary Paugh | Magnetic building game |
US7348612B2 (en) * | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US7265399B2 (en) | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
US7800097B2 (en) * | 2004-12-13 | 2010-09-21 | Panasonic Corporation | Semiconductor device including independent active layers and method for fabricating the same |
US7326962B2 (en) * | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
JP4866007B2 (ja) * | 2005-01-14 | 2012-02-01 | 富士通株式会社 | 化合物半導体装置 |
US8203185B2 (en) * | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7282765B2 (en) * | 2005-07-13 | 2007-10-16 | Ciclon Semiconductor Device Corp. | Power LDMOS transistor |
US8692324B2 (en) * | 2005-07-13 | 2014-04-08 | Ciclon Semiconductor Device Corp. | Semiconductor devices having charge balanced structure |
US7589378B2 (en) * | 2005-07-13 | 2009-09-15 | Texas Instruments Lehigh Valley Incorporated | Power LDMOS transistor |
EP1932181A4 (de) * | 2005-09-16 | 2009-06-17 | Univ California | N-polarer feldeffekttransistor mit aluminium-galliumnitrid-/galliumnitrid-verstärkungs-modus |
US7402844B2 (en) * | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
US7368971B2 (en) * | 2005-12-06 | 2008-05-06 | Cree, Inc. | High power, high frequency switch circuits using strings of power transistors |
JP5008317B2 (ja) * | 2006-02-27 | 2012-08-22 | 株式会社豊田中央研究所 | ユニポーラダイオード |
JP5052807B2 (ja) * | 2006-03-29 | 2012-10-17 | 古河電気工業株式会社 | 半導体装置及び電力変換装置 |
JP2007273640A (ja) * | 2006-03-30 | 2007-10-18 | Sanken Electric Co Ltd | 半導体装置 |
CA2584950A1 (en) * | 2006-04-26 | 2007-10-26 | Kansai Paint Co., Ltd. | Powder primer composition and method for forming coating film |
JP5147197B2 (ja) * | 2006-06-06 | 2013-02-20 | パナソニック株式会社 | トランジスタ |
US7646043B2 (en) | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
US7880172B2 (en) * | 2007-01-31 | 2011-02-01 | Cree, Inc. | Transistors having implanted channels and implanted P-type regions beneath the source region |
JP5298470B2 (ja) * | 2007-07-11 | 2013-09-25 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
CN101578705B (zh) * | 2007-07-20 | 2012-05-30 | 松下电器产业株式会社 | 碳化硅半导体装置及其制造方法 |
US7745846B2 (en) * | 2008-01-15 | 2010-06-29 | Ciclon Semiconductor Device Corp. | LDMOS integrated Schottky diode |
JP2009182107A (ja) * | 2008-01-30 | 2009-08-13 | Furukawa Electric Co Ltd:The | 半導体装置 |
US7781859B2 (en) * | 2008-03-24 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diode structures having deep wells for improving breakdown voltages |
US20090267145A1 (en) * | 2008-04-23 | 2009-10-29 | Ciclon Semiconductor Device Corp. | Mosfet device having dual interlevel dielectric thickness and method of making same |
US9711633B2 (en) * | 2008-05-09 | 2017-07-18 | Cree, Inc. | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions |
JP2010010412A (ja) * | 2008-06-27 | 2010-01-14 | Furukawa Electric Co Ltd:The | 半導体素子及びその製造方法 |
JP5524462B2 (ja) * | 2008-08-06 | 2014-06-18 | シャープ株式会社 | 半導体装置 |
DE102009018054B4 (de) * | 2009-04-21 | 2018-11-29 | Infineon Technologies Austria Ag | Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT |
JP4683141B2 (ja) * | 2009-05-01 | 2011-05-11 | 住友電気工業株式会社 | 横型接合型電界効果トランジスタ |
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JP5758132B2 (ja) * | 2011-01-26 | 2015-08-05 | 株式会社東芝 | 半導体素子 |
CN103392225B (zh) | 2011-02-23 | 2016-01-20 | 松下知识产权经营株式会社 | 氮化物半导体装置 |
DE102011016900A1 (de) | 2011-04-13 | 2012-10-18 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Halbleiterbauelement |
JP5877967B2 (ja) * | 2011-07-19 | 2016-03-08 | 富士通株式会社 | 化合物半導体装置 |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
WO2014103000A1 (ja) * | 2012-12-28 | 2014-07-03 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
JP6143598B2 (ja) | 2013-08-01 | 2017-06-07 | 株式会社東芝 | 半導体装置 |
JP6534791B2 (ja) * | 2013-12-16 | 2019-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9794401B2 (en) | 2015-01-06 | 2017-10-17 | Tracfone Wireless, Inc. | Methods, systems and applications for porting telephone numbers on wireless devices |
CN105789282B (zh) * | 2016-04-22 | 2019-01-25 | 西安电子科技大学 | 一种具有部分高掺杂沟道4H-SiC金半场效应管 |
US10192980B2 (en) | 2016-06-24 | 2019-01-29 | Cree, Inc. | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
US10892356B2 (en) | 2016-06-24 | 2021-01-12 | Cree, Inc. | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
US10840334B2 (en) | 2016-06-24 | 2020-11-17 | Cree, Inc. | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
US11430882B2 (en) | 2016-06-24 | 2022-08-30 | Wolfspeed, Inc. | Gallium nitride high-electron mobility transistors with p-type layers and process for making the same |
US10608079B2 (en) * | 2018-02-06 | 2020-03-31 | General Electric Company | High energy ion implantation for junction isolation in silicon carbide devices |
KR102626266B1 (ko) * | 2019-01-28 | 2024-01-16 | 울프스피드 인코포레이티드 | 매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 |
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-
2002
- 2002-11-26 US US10/304,272 patent/US6956239B2/en not_active Expired - Lifetime
-
2003
- 2003-09-25 TW TW092126490A patent/TWI329927B/zh not_active IP Right Cessation
- 2003-10-02 AU AU2003277252A patent/AU2003277252A1/en not_active Abandoned
- 2003-10-02 AT AT03812016T patent/ATE508477T1/de not_active IP Right Cessation
- 2003-10-02 CA CA002502485A patent/CA2502485A1/en not_active Abandoned
- 2003-10-02 JP JP2004555310A patent/JP2006507683A/ja active Pending
- 2003-10-02 DE DE60337027T patent/DE60337027D1/de not_active Expired - Lifetime
- 2003-10-02 EP EP03812016A patent/EP1565946B1/de not_active Expired - Lifetime
- 2003-10-02 WO PCT/US2003/031334 patent/WO2004049454A1/en active Application Filing
- 2003-10-02 CN CNB2003801044882A patent/CN100517761C/zh not_active Expired - Lifetime
- 2003-10-02 KR KR1020057009329A patent/KR20050086758A/ko not_active Application Discontinuation
-
2005
- 2005-06-01 US US11/142,551 patent/US7297580B2/en not_active Expired - Lifetime
-
2011
- 2011-12-26 JP JP2011284024A patent/JP5758796B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2006507683A (ja) | 2006-03-02 |
TW200419803A (en) | 2004-10-01 |
AU2003277252A1 (en) | 2004-06-18 |
CA2502485A1 (en) | 2004-06-10 |
JP2012080123A (ja) | 2012-04-19 |
TWI329927B (en) | 2010-09-01 |
CN1717811A (zh) | 2006-01-04 |
EP1565946A1 (de) | 2005-08-24 |
KR20050086758A (ko) | 2005-08-30 |
WO2004049454A1 (en) | 2004-06-10 |
US7297580B2 (en) | 2007-11-20 |
US6956239B2 (en) | 2005-10-18 |
EP1565946B1 (de) | 2011-05-04 |
CN100517761C (zh) | 2009-07-22 |
US20040099888A1 (en) | 2004-05-27 |
JP5758796B2 (ja) | 2015-08-05 |
ATE508477T1 (de) | 2011-05-15 |
US20050224809A1 (en) | 2005-10-13 |
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