DE68908373T2 - Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur. - Google Patents

Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur.

Info

Publication number
DE68908373T2
DE68908373T2 DE89313085T DE68908373T DE68908373T2 DE 68908373 T2 DE68908373 T2 DE 68908373T2 DE 89313085 T DE89313085 T DE 89313085T DE 68908373 T DE68908373 T DE 68908373T DE 68908373 T2 DE68908373 T2 DE 68908373T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
mirror structure
absorbing mirror
absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89313085T
Other languages
English (en)
Other versions
DE68908373D1 (de
Inventor
Masayuki Intellectual Ishikawa
Hajime Intellectual Prop Okuda
Hideo Intellectual Pr Shiozawa
Kazuhiko Intellectual Pr Itaya
Yukio Intellectual Pr Watanabe
Mariko Intellectual Pro Suzuki
Genichi Intellectual Hatakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68908373D1 publication Critical patent/DE68908373D1/de
Publication of DE68908373T2 publication Critical patent/DE68908373T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3206—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
DE89313085T 1988-12-14 1989-12-14 Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur. Expired - Fee Related DE68908373T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63315618A JP2831667B2 (ja) 1988-12-14 1988-12-14 半導体レーザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE68908373D1 DE68908373D1 (de) 1993-09-16
DE68908373T2 true DE68908373T2 (de) 1993-12-16

Family

ID=18067531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89313085T Expired - Fee Related DE68908373T2 (de) 1988-12-14 1989-12-14 Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur.

Country Status (4)

Country Link
US (1) US4987096A (de)
EP (1) EP0373933B1 (de)
JP (1) JP2831667B2 (de)
DE (1) DE68908373T2 (de)

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Publication number Priority date Publication date Assignee Title
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5563094A (en) * 1989-03-24 1996-10-08 Xerox Corporation Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
JPH0828498B2 (ja) * 1989-10-02 1996-03-21 株式会社東芝 半導体素子とその製造方法
US5190891A (en) * 1990-06-05 1993-03-02 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor laser device in which the p-type clad layer and the active layer are grown at different rates
JP2624881B2 (ja) * 1990-08-23 1997-06-25 株式会社東芝 半導体レーザ素子およびその製造方法
US5171707A (en) * 1990-09-13 1992-12-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions
JPH04287995A (ja) * 1991-02-19 1992-10-13 Mitsubishi Electric Corp 可視光半導体レ−ザおよびその製造方法
US5365541A (en) * 1992-01-29 1994-11-15 Trw Inc. Mirror with photonic band structure
US5246878A (en) * 1992-03-27 1993-09-21 Bell Communications Research, Inc. Capping layer preventing deleterious effects of As--P exchange
JP3124376B2 (ja) * 1992-06-17 2001-01-15 株式会社東芝 化合物半導体の気相成長装置
US5596591A (en) * 1993-03-03 1997-01-21 Nec Corporation Gain-guided type laser diode
JPH06268334A (ja) * 1993-03-16 1994-09-22 Mitsubishi Kasei Corp レーザーダイオード及びその製造方法
JPH0794833A (ja) * 1993-09-22 1995-04-07 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JP3115775B2 (ja) * 1994-11-16 2000-12-11 三菱電機株式会社 半導体レーザの製造方法
JP3807638B2 (ja) * 1997-01-29 2006-08-09 シャープ株式会社 半導体発光素子及びその製造方法
JP3332785B2 (ja) * 1997-02-28 2002-10-07 シャープ株式会社 半導体発光素子およびその製造方法
GB2344457B (en) * 1998-12-02 2000-12-27 Arima Optoelectronics Corp Semiconductor devices
DE10061701A1 (de) * 2000-12-12 2002-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser mit lateraler Stromführung und Verfahren zu dessen Herstellung
JP2002261379A (ja) * 2001-03-02 2002-09-13 Mitsubishi Electric Corp 半導体デバイスおよびそれを応用した光半導体デバイス
US6782024B2 (en) 2001-05-10 2004-08-24 Bookham Technology Plc High power semiconductor laser diode
JP4292925B2 (ja) * 2003-09-16 2009-07-08 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
CN100449891C (zh) * 2003-12-15 2009-01-07 古河电气工业株式会社 制造半导体器件的方法
US7184640B2 (en) * 2004-02-25 2007-02-27 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Buried heterostructure device fabricated by single step MOCVD
US7440666B2 (en) 2004-02-25 2008-10-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD
KR100568314B1 (ko) 2004-09-24 2006-04-05 삼성전기주식회사 자려발진형 반도체 레이저 및 그 제조방법
US20060087123A1 (en) * 2004-10-22 2006-04-27 Stout David E Dual-rotor, single input/output starter-generator
GB2432455A (en) * 2005-11-17 2007-05-23 Sharp Kk Growth of a semiconductor layer structure
JP2017050318A (ja) 2015-08-31 2017-03-09 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
JPS56135994A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd Semiconductor light emitting device
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JPS61121487A (ja) * 1984-11-19 1986-06-09 Rohm Co Ltd 半導体レ−ザ
JPS61196592A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 複合共振器型半導体レ−ザ装置の製造方法
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
DE3789695T2 (de) * 1986-08-08 1994-08-25 Toshiba Kawasaki Kk Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
JPH0821756B2 (ja) * 1986-10-31 1996-03-04 セイコーエプソン株式会社 半導体レーザの製造方法
JPS63124490A (ja) * 1986-11-13 1988-05-27 Nec Corp 半導体レ−ザ
US4821278A (en) * 1987-04-02 1989-04-11 Trw Inc. Inverted channel substrate planar semiconductor laser
EP0328393B1 (de) * 1988-02-09 1993-10-06 Kabushiki Kaisha Toshiba Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
JPH0212885A (ja) * 1988-06-29 1990-01-17 Nec Corp 半導体レーザ及びその出射ビームの垂直放射角の制御方法

Also Published As

Publication number Publication date
EP0373933A2 (de) 1990-06-20
EP0373933A3 (en) 1990-12-12
JPH02159783A (ja) 1990-06-19
DE68908373D1 (de) 1993-09-16
JP2831667B2 (ja) 1998-12-02
US4987096A (en) 1991-01-22
EP0373933B1 (de) 1993-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee