DE68908534D1 - Siliziumcarbidplaettchen und verfahren zu deren herstellung. - Google Patents

Siliziumcarbidplaettchen und verfahren zu deren herstellung.

Info

Publication number
DE68908534D1
DE68908534D1 DE8989312383T DE68908534T DE68908534D1 DE 68908534 D1 DE68908534 D1 DE 68908534D1 DE 8989312383 T DE8989312383 T DE 8989312383T DE 68908534 T DE68908534 T DE 68908534T DE 68908534 D1 DE68908534 D1 DE 68908534D1
Authority
DE
Germany
Prior art keywords
weight
silica
platelets
carbon
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989312383T
Other languages
English (en)
Other versions
DE68908534T2 (de
Inventor
Mukesh K Jain
Sadashiv K Nadkarni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rio Tinto Alcan International Ltd
Original Assignee
Alcan International Ltd Canada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcan International Ltd Canada filed Critical Alcan International Ltd Canada
Publication of DE68908534D1 publication Critical patent/DE68908534D1/de
Application granted granted Critical
Publication of DE68908534T2 publication Critical patent/DE68908534T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
DE89312383T 1988-12-01 1989-11-29 Siliziumcarbidplättchen und Verfahren zu deren Herstellung. Expired - Fee Related DE68908534T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA584657 1988-12-01

Publications (2)

Publication Number Publication Date
DE68908534D1 true DE68908534D1 (de) 1993-09-23
DE68908534T2 DE68908534T2 (de) 1993-12-02

Family

ID=4139206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89312383T Expired - Fee Related DE68908534T2 (de) 1988-12-01 1989-11-29 Siliziumcarbidplättchen und Verfahren zu deren Herstellung.

Country Status (10)

Country Link
US (1) US5080879A (de)
EP (1) EP0371770B1 (de)
JP (1) JPH02263797A (de)
AT (1) ATE93282T1 (de)
AU (1) AU621958B2 (de)
BR (1) BR8906106A (de)
DE (1) DE68908534T2 (de)
DK (1) DK604889A (de)
NO (1) NO894800L (de)
ZA (1) ZA899213B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258170A (en) * 1990-10-01 1993-11-02 Alcan International Limited Process for producing silicon carbide platelets
US5173283A (en) * 1990-10-01 1992-12-22 Alcan International Limited Platelets for producing silicon carbide platelets and the platelets so-produced
JP3769739B2 (ja) * 1994-11-17 2006-04-26 住友電気工業株式会社 多孔質セラミックス膜及びその製造方法
US5884871A (en) * 1997-03-27 1999-03-23 Boeing North American, Inc. Use of absorbing walls for laminar flow control
DE10113918C2 (de) * 2001-03-07 2003-04-24 Becorit Gmbh Gesinterte anorganische Granulate und Formkörper auf Basis von Kohlenstoff und/oder Molybdänverbindungen in einer keramischen Matrix, deren Herstellung sowie deren Verwendung

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JPS5515946A (en) * 1978-07-19 1980-02-04 Toray Ind Inc Production of metal nitride fine powder
US4256676A (en) * 1978-11-22 1981-03-17 Kovach Julius L Process for preparing porous metal oxide beads
JPS5927743B2 (ja) * 1979-02-28 1984-07-07 旭硝子株式会社 セラミック紛未の成形品の処理方法
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JPS5857392B2 (ja) * 1980-10-22 1983-12-20 日立化成工業株式会社 アルミニウム微粉末被覆炭化珪素粉末の製造方法
JPS5771869A (en) * 1980-10-22 1982-05-04 Hitachi Chemical Co Ltd Sinterable silicon carbide powder composition and manufacture of silicon carbide sintered body
DE3105556A1 (de) * 1981-02-16 1982-09-02 Henkel KGaA, 4000 Düsseldorf "verbessertes verfahren zur herstellung von xanthomonas-biopolymeren"
JPS589807A (ja) * 1981-07-10 1983-01-20 Showa Denko Kk 高純度SiCの製造法
JPS58204812A (ja) * 1982-05-22 1983-11-29 Central Glass Co Ltd 炭素含有SiC粉末の製造法
EP0111008B1 (de) * 1982-06-01 1989-12-27 MITSUI TOATSU CHEMICALS, Inc. Herstellungsverfahren von metallkarbiden und deren vorprodukte
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
US4900531A (en) * 1982-06-22 1990-02-13 Harry Levin Converting a carbon preform object to a silicon carbide object
DE3347862C2 (de) * 1982-09-17 1988-05-11 Tokuyama Soda K.K., Tokuyama, Yamaguchi, Jp
DD242325A3 (de) * 1983-05-27 1987-01-28 Reiner Kinder Verfahren zur herstellung hochporoeser mineralischer koerper mit polyformer struktur
US4536379A (en) * 1983-06-02 1985-08-20 Graphite Sales, Inc. Production of silicon carbide
DD224886A1 (de) * 1983-06-30 1985-07-17 Univ Dresden Tech Verfahren zur zuechtung von siliciumcarbid-einkristallen
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JPS60176910A (ja) * 1984-02-22 1985-09-11 Tokuyama Soda Co Ltd 窒化アルミニウム粉末の製造方法
FR2565964A1 (fr) * 1984-06-13 1985-12-20 Lafarge Refractaires Nouveaux refractaires a haute teneur en alumine et leur procede d'obtention
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Also Published As

Publication number Publication date
EP0371770B1 (de) 1993-08-18
DK604889D0 (da) 1989-11-30
AU621958B2 (en) 1992-03-26
JPH02263797A (ja) 1990-10-26
BR8906106A (pt) 1990-07-31
EP0371770A2 (de) 1990-06-06
NO894800D0 (no) 1989-11-30
US5080879A (en) 1992-01-14
EP0371770A3 (en) 1990-08-22
NO894800L (no) 1990-06-05
DK604889A (da) 1990-06-02
ATE93282T1 (de) 1993-09-15
AU4566389A (en) 1990-06-07
ZA899213B (en) 1990-09-26
DE68908534T2 (de) 1993-12-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee