DE68911621D1 - Verfahren zum Herstellen einer Einrichtung. - Google Patents

Verfahren zum Herstellen einer Einrichtung.

Info

Publication number
DE68911621D1
DE68911621D1 DE89202086T DE68911621T DE68911621D1 DE 68911621 D1 DE68911621 D1 DE 68911621D1 DE 89202086 T DE89202086 T DE 89202086T DE 68911621 T DE68911621 T DE 68911621T DE 68911621 D1 DE68911621 D1 DE 68911621D1
Authority
DE
Germany
Prior art keywords
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89202086T
Other languages
English (en)
Other versions
DE68911621T2 (de
Inventor
Udo Klaus Paul Biermann
Gijsbertus Adrianus Spierings
Der Kruis Franciscus Josep Van
Jan Haisma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE68911621D1 publication Critical patent/DE68911621D1/de
Publication of DE68911621T2 publication Critical patent/DE68911621T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
DE68911621T 1988-08-16 1989-08-15 Verfahren zum Herstellen einer Einrichtung. Expired - Fee Related DE68911621T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8802028A NL8802028A (nl) 1988-08-16 1988-08-16 Werkwijze voor het vervaardigen van een inrichting.

Publications (2)

Publication Number Publication Date
DE68911621D1 true DE68911621D1 (de) 1994-02-03
DE68911621T2 DE68911621T2 (de) 1994-06-16

Family

ID=19852764

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68911621T Expired - Fee Related DE68911621T2 (de) 1988-08-16 1989-08-15 Verfahren zum Herstellen einer Einrichtung.

Country Status (5)

Country Link
US (1) US4994139A (de)
EP (1) EP0355913B1 (de)
JP (1) JPH02103507A (de)
DE (1) DE68911621T2 (de)
NL (1) NL8802028A (de)

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GB2233152A (en) * 1989-06-10 1991-01-02 Plessey Co Plc Bonding a device to a substrate
JP2985325B2 (ja) * 1991-02-18 1999-11-29 三菱瓦斯化学株式会社 薄銅張回路基板の製造法
US5233464A (en) * 1991-03-20 1993-08-03 Costich Verne R Multilayer infrared filter
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
JPH06333892A (ja) * 1993-03-22 1994-12-02 Fuji Electric Corp Res & Dev Ltd 電子デバイス
FR2725074B1 (fr) * 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US5538151A (en) * 1995-01-20 1996-07-23 International Business Machines Corp. Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer
US5855735A (en) * 1995-10-03 1999-01-05 Kobe Precision, Inc. Process for recovering substrates
WO1997033716A1 (en) 1996-03-13 1997-09-18 Trustees Of The Stevens Institute Of Technology Tribochemical polishing of ceramics and metals
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5994207A (en) 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US20010049031A1 (en) * 1999-03-04 2001-12-06 Christopher H. Bajorek Glass substrate for magnetic media and method of making the same
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
GB0002775D0 (en) * 2000-02-07 2000-03-29 Univ Glasgow Improved integrated optical devices
CN1175401C (zh) * 2000-04-28 2004-11-10 三井金属矿业株式会社 磁记录介质用玻璃基板的制造方法
JP4947754B2 (ja) * 2001-03-27 2012-06-06 日本板硝子株式会社 情報記録媒体用基板及びその製造方法、情報記録媒体、並びにガラス素板
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
JP2002329576A (ja) * 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7045878B2 (en) 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6956268B2 (en) 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US6875671B2 (en) 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US7163826B2 (en) 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
JP2003107545A (ja) * 2001-09-27 2003-04-09 Ngk Insulators Ltd リッジ型光導波路素子の製造方法
DE10220045A1 (de) * 2002-05-04 2003-11-13 Zeiss Carl Smt Ag Verfahren zur Herstellung eines optischen Elementes aus Quarzsubstrat
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
GB0505409D0 (en) * 2005-03-16 2005-04-20 Bookham Technology Plc Optic/electronic chip support
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
DE102007007907A1 (de) * 2007-02-14 2008-08-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines diffraktiven optischen Elements, nach einem derartigen Verfahren hergestelltes diffraktives optisches Element, Beleuchtungsoptik mit einem derartigen diffratkiven optischen Element, Mikrolithografie-Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik, Verfahren zum Herstellen eines mikroelektronischen Bauelements unter Verwendung einer derartigen Projektionsbelichtungsanlage sowie mit einem solchen Verfahren hergestelltes Bauelement
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
JP5366088B2 (ja) * 2009-09-16 2013-12-11 セイコーインスツル株式会社 サーマルヘッドおよびプリンタ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2305188A1 (de) * 1973-02-02 1974-08-08 Wacker Chemitronic Verfahren zur herstellung von polierten halbleiteroberflaechen
NL7511804A (en) * 1975-10-08 1977-04-13 Du Pont Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
US4285714A (en) * 1978-12-07 1981-08-25 Spire Corporation Electrostatic bonding using externally applied pressure
US4436580A (en) * 1983-08-12 1984-03-13 The United States Of America As Represented By The Secretary Of The Army Method of preparing a mercury cadium telluride substrate for passivation and processing
US4554717A (en) * 1983-12-08 1985-11-26 The United States Of America As Represented By The Secretary Of The Army Method of making miniature high frequency SC-cut quartz crystal resonators
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
DE3543002A1 (de) * 1985-12-05 1987-06-11 Bodenseewerk Geraetetech Verfahren zur herstellung von integriert-optischen strukturen in glas
NL8701478A (nl) * 1987-06-25 1989-01-16 Philips Nv Werkwijze voor het vervaardigen van een planaire optische component.
NL8800953A (nl) * 1988-04-13 1989-11-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderlichaam.

Also Published As

Publication number Publication date
EP0355913B1 (de) 1993-12-22
DE68911621T2 (de) 1994-06-16
JPH02103507A (ja) 1990-04-16
US4994139A (en) 1991-02-19
EP0355913A1 (de) 1990-02-28
NL8802028A (nl) 1990-03-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee