DE68913444T2 - Dünnfilm-SOI-MOSFET und Verfahren zur Herstellung. - Google Patents

Dünnfilm-SOI-MOSFET und Verfahren zur Herstellung.

Info

Publication number
DE68913444T2
DE68913444T2 DE68913444T DE68913444T DE68913444T2 DE 68913444 T2 DE68913444 T2 DE 68913444T2 DE 68913444 T DE68913444 T DE 68913444T DE 68913444 T DE68913444 T DE 68913444T DE 68913444 T2 DE68913444 T2 DE 68913444T2
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
soi mosfet
film soi
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68913444T
Other languages
English (en)
Other versions
DE68913444D1 (de
Inventor
Yasuo C O Mitsubishi Yamaguchi
Tadashi C O Mitsubis Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE68913444D1 publication Critical patent/DE68913444D1/de
Application granted granted Critical
Publication of DE68913444T2 publication Critical patent/DE68913444T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE68913444T 1988-11-25 1989-11-23 Dünnfilm-SOI-MOSFET und Verfahren zur Herstellung. Expired - Fee Related DE68913444T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63299136A JP2507567B2 (ja) 1988-11-25 1988-11-25 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE68913444D1 DE68913444D1 (de) 1994-04-07
DE68913444T2 true DE68913444T2 (de) 1994-07-14

Family

ID=17868589

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913444T Expired - Fee Related DE68913444T2 (de) 1988-11-25 1989-11-23 Dünnfilm-SOI-MOSFET und Verfahren zur Herstellung.

Country Status (4)

Country Link
US (3) US5125007A (de)
EP (1) EP0370809B1 (de)
JP (1) JP2507567B2 (de)
DE (1) DE68913444T2 (de)

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KR100223901B1 (ko) * 1996-10-11 1999-10-15 구자홍 액정 표시장치 및 제조방법
KR100500033B1 (ko) 1996-10-15 2005-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US6424010B2 (en) 1996-11-15 2002-07-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage
DE69624386T2 (de) * 1996-11-15 2003-06-12 Mitsubishi Electric Corp Halbleiteranordnung und verfahren zur herstellung
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JP4104701B2 (ja) 1997-06-26 2008-06-18 株式会社半導体エネルギー研究所 半導体装置
JP3859821B2 (ja) * 1997-07-04 2006-12-20 株式会社半導体エネルギー研究所 半導体装置
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Also Published As

Publication number Publication date
US5343051A (en) 1994-08-30
US5125007A (en) 1992-06-23
JPH02144969A (ja) 1990-06-04
US5424225A (en) 1995-06-13
EP0370809A3 (en) 1990-07-11
EP0370809B1 (de) 1994-03-02
JP2507567B2 (ja) 1996-06-12
DE68913444D1 (de) 1994-04-07
EP0370809A2 (de) 1990-05-30

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