DE68915012D1 - Anlage zur Erzeugung von Dünnschichten und Ionenquelle unter Anwendung von Plasmazerstäubung. - Google Patents

Anlage zur Erzeugung von Dünnschichten und Ionenquelle unter Anwendung von Plasmazerstäubung.

Info

Publication number
DE68915012D1
DE68915012D1 DE68915012T DE68915012T DE68915012D1 DE 68915012 D1 DE68915012 D1 DE 68915012D1 DE 68915012 T DE68915012 T DE 68915012T DE 68915012 T DE68915012 T DE 68915012T DE 68915012 D1 DE68915012 D1 DE 68915012D1
Authority
DE
Germany
Prior art keywords
plant
production
ion source
thin films
plasma atomization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68915012T
Other languages
English (en)
Other versions
DE68915012T2 (de
Inventor
Morito Matsuoka
Ken Ichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63025604A external-priority patent/JP2595009B2/ja
Priority claimed from JP63025603A external-priority patent/JP2566602B2/ja
Priority claimed from JP20011388A external-priority patent/JPH0721993B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE68915012D1 publication Critical patent/DE68915012D1/de
Application granted granted Critical
Publication of DE68915012T2 publication Critical patent/DE68915012T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
DE68915012T 1988-02-08 1989-02-06 Anlage zur Erzeugung von Dünnschichten und Ionenquelle unter Anwendung von Plasmazerstäubung. Expired - Lifetime DE68915012T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63025604A JP2595009B2 (ja) 1988-02-08 1988-02-08 プラズマ生成装置およびプラズマを利用した薄膜形成装置
JP63025603A JP2566602B2 (ja) 1988-02-08 1988-02-08 イオン源
JP20011388A JPH0721993B2 (ja) 1988-08-12 1988-08-12 スパッタ型イオン源

Publications (2)

Publication Number Publication Date
DE68915012D1 true DE68915012D1 (de) 1994-06-09
DE68915012T2 DE68915012T2 (de) 1994-12-08

Family

ID=27285074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915012T Expired - Lifetime DE68915012T2 (de) 1988-02-08 1989-02-06 Anlage zur Erzeugung von Dünnschichten und Ionenquelle unter Anwendung von Plasmazerstäubung.

Country Status (4)

Country Link
US (1) US4941915A (de)
EP (1) EP0328033B1 (de)
KR (1) KR920003789B1 (de)
DE (1) DE68915012T2 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH0816266B2 (ja) * 1990-10-31 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 高アスペクト比の穴に材料を付着させる装置
WO1992016671A1 (en) * 1991-03-20 1992-10-01 Canon Kabushiki Kaisha Method and device for forming film by sputtering process
US5510088A (en) * 1992-06-11 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature plasma film deposition using dielectric chamber as source material
EP0726593A1 (de) * 1995-02-13 1996-08-14 Applied Materials, Inc. Hochleistung-Reaktivespezieserzeuger auf der Basis von Plasma
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5895548A (en) * 1996-03-29 1999-04-20 Applied Komatsu Technology, Inc. High power microwave plasma applicator
US6368469B1 (en) * 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
KR100489918B1 (ko) * 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마발생및스퍼터링용코일
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
JPH10255987A (ja) * 1997-03-11 1998-09-25 Tdk Corp 有機ｅｌ素子の製造方法
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US5902461A (en) * 1997-09-03 1999-05-11 Applied Materials, Inc. Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
IT1298891B1 (it) * 1998-02-06 2000-02-07 Ca Te V Centro Tecnologie Del Impianto da vuoto portatile provvisto di precamera per la deposizione di film sottili su superfici anche inamovibili.
US6506287B1 (en) 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6095160A (en) * 1998-04-06 2000-08-01 Chu; Xi In-situ magnetron assisted DC plasma etching apparatus and method for cleaning magnetic recording disks
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6139679A (en) * 1998-10-15 2000-10-31 Applied Materials, Inc. Coil and coil feedthrough
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6237526B1 (en) * 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6409890B1 (en) 1999-07-27 2002-06-25 Applied Materials, Inc. Method and apparatus for forming a uniform layer on a workpiece during sputtering
US6342132B1 (en) 1999-10-29 2002-01-29 International Business Machines Corporation Method of controlling gas density in an ionized physical vapor deposition apparatus
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
EP2385542B1 (de) * 2010-05-07 2013-01-02 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektronenstrahlvorrichtung mit Dispersionskompensation und Betriebsverfahren dafür

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616450A (en) * 1968-11-07 1971-10-26 Peter J Clark Sputtering apparatus
US4041353A (en) * 1971-09-07 1977-08-09 Telic Corporation Glow discharge method and apparatus
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
US4046660A (en) * 1975-12-29 1977-09-06 Bell Telephone Laboratories, Incorporated Sputter coating with charged particle flux control
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
JPS5943546B2 (ja) * 1981-05-26 1984-10-23 日本真空技術株式会社 スパツタリング装置
JPS6050167A (ja) * 1983-08-26 1985-03-19 Nippon Telegr & Teleph Corp <Ntt> プラズマ付着装置
US4690744A (en) * 1983-07-20 1987-09-01 Konishiroku Photo Industry Co., Ltd. Method of ion beam generation and an apparatus based on such method
JPS60130039A (ja) * 1983-12-16 1985-07-11 Jeol Ltd イオン源
JPS60195855A (ja) * 1984-03-19 1985-10-04 Hitachi Ltd 大容量イオン源
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
JPH07107189B2 (ja) * 1986-03-24 1995-11-15 日本電信電話株式会社 薄膜形成装置
JPH0689464B2 (ja) * 1986-03-26 1994-11-09 日本電信電話株式会社 イオン源

Also Published As

Publication number Publication date
EP0328033A3 (en) 1990-08-08
EP0328033A2 (de) 1989-08-16
KR890013819A (ko) 1989-09-26
KR920003789B1 (ko) 1992-05-14
EP0328033B1 (de) 1994-05-04
DE68915012T2 (de) 1994-12-08
US4941915A (en) 1990-07-17

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