DE68917054D1 - Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen. - Google Patents

Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.

Info

Publication number
DE68917054D1
DE68917054D1 DE68917054T DE68917054T DE68917054D1 DE 68917054 D1 DE68917054 D1 DE 68917054D1 DE 68917054 T DE68917054 T DE 68917054T DE 68917054 T DE68917054 T DE 68917054T DE 68917054 D1 DE68917054 D1 DE 68917054D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal growth
semiconductor compounds
decomposable
decomposable semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917054T
Other languages
English (en)
Other versions
DE68917054T2 (de
Inventor
Keiji C O Kagoubutsu-H Shirata
Koichi C O Kagoubutsu-Ha Sassa
Kenji C O Kagoubutsu- Tomizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63205863A external-priority patent/JPH0255290A/ja
Priority claimed from JP63205861A external-priority patent/JPH0255289A/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of DE68917054D1 publication Critical patent/DE68917054D1/de
Application granted granted Critical
Publication of DE68917054T2 publication Critical patent/DE68917054T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
DE68917054T 1988-08-19 1989-08-18 Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen. Expired - Fee Related DE68917054T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63205863A JPH0255290A (ja) 1988-08-19 1988-08-19 高解離圧化合物半導体単結晶成長方法及びその装置
JP63205861A JPH0255289A (ja) 1988-08-19 1988-08-19 高解離圧化合物半導体単結晶成長方法及びその装置

Publications (2)

Publication Number Publication Date
DE68917054D1 true DE68917054D1 (de) 1994-09-01
DE68917054T2 DE68917054T2 (de) 1995-01-05

Family

ID=26515295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917054T Expired - Fee Related DE68917054T2 (de) 1988-08-19 1989-08-18 Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.

Country Status (3)

Country Link
US (1) US5074953A (de)
EP (1) EP0355747B1 (de)
DE (1) DE68917054T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085728A (en) * 1987-05-05 1992-02-04 Mobil Solar Energy Corporation System for controlling crystal growth apparatus and melt replenishment system therefor
SE467241B (sv) * 1990-06-01 1992-06-22 Sandvik Ab Foerfarande foer vaegning av metallinnehaall i ett kaerl i en anlaeggning foer gjutning
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
WO1993006264A1 (en) * 1991-09-19 1993-04-01 Mitsubishi Materials Corporation Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound
US5277746A (en) * 1992-07-27 1994-01-11 Texas Instruments Incorporated High pressure liquid phase epitaxy reactor chamber and method with direct see through capability
JPH08133887A (ja) * 1994-11-11 1996-05-28 Komatsu Electron Metals Co Ltd 半導体単結晶の直径検出装置
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
US6019841A (en) * 1997-03-24 2000-02-01 G.T. Equuipment Technologies Inc. Method and apparatus for synthesis and growth of semiconductor crystals
US6572700B2 (en) * 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
US6051064A (en) * 1998-08-20 2000-04-18 Seh America, Inc. Apparatus for weighing crystals during Czochralski crystal growing
DE102016219605A1 (de) * 2016-10-10 2018-04-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
GB1478192A (en) * 1974-03-29 1977-06-29 Nat Res Dev Automatically controlled crystal growth
DE2516197C3 (de) * 1975-04-14 1982-02-04 Schweizerische Aluminium AG, 3965 Chippis Wägevorrichtung zur automatischen Regelung des Durchmessers eines Kristalls beim Ziehen aus einem Tiegel
WO1983002464A1 (en) * 1982-01-04 1983-07-21 Seymour, Robert, Stephen Diameter control in czochralski crystal growth
JPS57140397A (en) * 1982-01-14 1982-08-30 Tohoku Metal Ind Ltd Method and apparatus for manufacturing crystal
JPS58135626A (ja) * 1982-02-08 1983-08-12 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶の製造方法及び製造装置
GB2140704B (en) * 1983-04-04 1986-05-14 Agency Ind Science Techn Control of crystal pulling
DE3472577D1 (en) * 1983-08-31 1988-08-11 Japan Res Dev Corp Apparatus for growing single crystals of dissociative compounds
JPS60255692A (ja) * 1984-05-31 1985-12-17 Res Dev Corp Of Japan 高解離圧化合物半導体単結晶引き上げ装置
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法
JPS61205697A (ja) * 1985-03-07 1986-09-11 Nec Corp ３−５族化合物半導体の単結晶成長装置
JPH0639355B2 (ja) * 1985-07-04 1994-05-25 日本電気株式会社 化合物半導体単結晶の製造方法

Also Published As

Publication number Publication date
EP0355747A2 (de) 1990-02-28
EP0355747B1 (de) 1994-07-27
US5074953A (en) 1991-12-24
EP0355747A3 (de) 1991-07-03
DE68917054T2 (de) 1995-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee