DE68917848T2 - Halbleiteranordnung. - Google Patents

Halbleiteranordnung.

Info

Publication number
DE68917848T2
DE68917848T2 DE68917848T DE68917848T DE68917848T2 DE 68917848 T2 DE68917848 T2 DE 68917848T2 DE 68917848 T DE68917848 T DE 68917848T DE 68917848 T DE68917848 T DE 68917848T DE 68917848 T2 DE68917848 T2 DE 68917848T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917848T
Other languages
English (en)
Other versions
DE68917848D1 (de
Inventor
Kazuki C O Seiko Epso Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1175167A external-priority patent/JP2525672B2/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE68917848D1 publication Critical patent/DE68917848D1/de
Application granted granted Critical
Publication of DE68917848T2 publication Critical patent/DE68917848T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
DE68917848T 1988-10-14 1989-10-12 Halbleiteranordnung. Expired - Fee Related DE68917848T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP25883388 1988-10-14
JP12252589 1989-05-16
JP12252689 1989-05-16
JP1175167A JP2525672B2 (ja) 1988-10-14 1989-07-06 半導体装置

Publications (2)

Publication Number Publication Date
DE68917848D1 DE68917848D1 (de) 1994-10-06
DE68917848T2 true DE68917848T2 (de) 1995-02-02

Family

ID=27470862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917848T Expired - Fee Related DE68917848T2 (de) 1988-10-14 1989-10-12 Halbleiteranordnung.

Country Status (3)

Country Link
US (1) US5093711A (de)
EP (1) EP0365932B1 (de)
DE (1) DE68917848T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5541441A (en) * 1994-10-06 1996-07-30 Actel Corporation Metal to metal antifuse
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
EP0480580A3 (en) * 1990-09-10 1992-09-02 Canon Kabushiki Kaisha Electrode structure of semiconductor device and method for manufacturing the same
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5110754A (en) * 1991-10-04 1992-05-05 Micron Technology, Inc. Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
JP2808965B2 (ja) * 1992-02-19 1998-10-08 日本電気株式会社 半導体装置
EP0558176A1 (de) * 1992-02-26 1993-09-01 Actel Corporation Metall-Metall-Antischmelzsicherung mit verbesserter Diffusionsbarriere-Schicht
US5284788A (en) * 1992-09-25 1994-02-08 Texas Instruments Incorporated Method and device for controlling current in a circuit
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
US5789764A (en) * 1995-04-14 1998-08-04 Actel Corporation Antifuse with improved antifuse material
EP0774164A1 (de) * 1995-06-02 1997-05-21 Actel Corporation Antisicherung mit erhöhten wolfram-stiften und herstellungsverfahren
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
JP3488681B2 (ja) * 1999-10-26 2004-01-19 シャープ株式会社 液晶表示装置
JP2003516640A (ja) * 1999-12-08 2003-05-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ダイオードを有する半導体デバイス、およびこのデバイスを製造する方法
US6344669B1 (en) * 2000-06-13 2002-02-05 United Microelectronics Corp. CMOS sensor
US6633182B2 (en) 2001-09-05 2003-10-14 Carnegie Mellon University Programmable gate array based on configurable metal interconnect vias
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
US7132350B2 (en) 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
US7180123B2 (en) * 2003-07-21 2007-02-20 Macronix International Co., Ltd. Method for programming programmable eraseless memory

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
US4174521A (en) * 1978-04-06 1979-11-13 Harris Corporation PROM electrically written by solid phase epitaxy
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device
US4424579A (en) * 1981-02-23 1984-01-03 Burroughs Corporation Mask programmable read-only memory stacked above a semiconductor substrate
US4442507A (en) * 1981-02-23 1984-04-10 Burroughs Corporation Electrically programmable read-only memory stacked above a semiconductor substrate
DE3279114D1 (en) * 1981-05-15 1988-11-17 Fairchild Semiconductor Schottky diode - polycrystalline silicon resistor memory cell
US4431460A (en) * 1982-03-08 1984-02-14 International Business Machines Corporation Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer
US4590589A (en) * 1982-12-21 1986-05-20 Zoran Corporation Electrically programmable read only memory
US4583106A (en) * 1983-08-04 1986-04-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4598386A (en) * 1984-04-18 1986-07-01 Roesner Bruce B Reduced-area, read-only memory
JPS62104066A (ja) * 1985-10-31 1987-05-14 Toshiba Corp 半導体保護装置
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element

Also Published As

Publication number Publication date
EP0365932A1 (de) 1990-05-02
DE68917848D1 (de) 1994-10-06
EP0365932B1 (de) 1994-08-31
US5093711A (en) 1992-03-03

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: HOFFMANN, E., DIPL.-ING., PAT.-ANW., 82166 GRAEFELFING

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee