DE68918972D1 - Montage einer Halbleiteranordnung. - Google Patents
Montage einer Halbleiteranordnung.Info
- Publication number
- DE68918972D1 DE68918972D1 DE68918972T DE68918972T DE68918972D1 DE 68918972 D1 DE68918972 D1 DE 68918972D1 DE 68918972 T DE68918972 T DE 68918972T DE 68918972 T DE68918972 T DE 68918972T DE 68918972 D1 DE68918972 D1 DE 68918972D1
- Authority
- DE
- Germany
- Prior art keywords
- solder
- assembly
- layers
- layer
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB888807729A GB8807729D0 (en) | 1988-03-31 | 1988-03-31 | Device mounting |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918972D1 true DE68918972D1 (de) | 1994-12-01 |
DE68918972T2 DE68918972T2 (de) | 1995-05-24 |
Family
ID=10634455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918972T Expired - Fee Related DE68918972T2 (de) | 1988-03-31 | 1989-03-31 | Montage einer Halbleiteranordnung. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4995546A (de) |
EP (1) | EP0335744B1 (de) |
JP (1) | JP2557268B2 (de) |
AT (1) | ATE113413T1 (de) |
CA (1) | CA1311860C (de) |
DE (1) | DE68918972T2 (de) |
GB (1) | GB8807729D0 (de) |
WO (1) | WO1989009491A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5170930A (en) * | 1991-11-14 | 1992-12-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
JPH06265726A (ja) * | 1993-03-15 | 1994-09-22 | Chichibu Cement Co Ltd | 偏光子の接合方法およびメタライズ方法 |
US5328087A (en) * | 1993-03-29 | 1994-07-12 | Microelectronics And Computer Technology Corporation | Thermally and electrically conductive adhesive material and method of bonding with same |
US5445308A (en) * | 1993-03-29 | 1995-08-29 | Nelson; Richard D. | Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal |
US5540379A (en) * | 1994-05-02 | 1996-07-30 | Motorola, Inc. | Soldering process |
US5622305A (en) * | 1995-05-10 | 1997-04-22 | Lucent Technologies Inc. | Bonding scheme using group VB metallic layer |
JP2001176999A (ja) * | 2000-11-27 | 2001-06-29 | Tanaka Kikinzoku Kogyo Kk | 電子部品の気密封止方法 |
US6841413B2 (en) * | 2002-01-07 | 2005-01-11 | Intel Corporation | Thinned die integrated circuit package |
US20050136640A1 (en) * | 2002-01-07 | 2005-06-23 | Chuan Hu | Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same |
US20040125563A1 (en) * | 2002-12-31 | 2004-07-01 | Vrtis Joan K. | Coating for a heat dissipation device and a method of fabrication |
US8390131B2 (en) * | 2004-06-03 | 2013-03-05 | International Rectifier Corporation | Semiconductor device with reduced contact resistance |
US7364063B2 (en) * | 2004-08-09 | 2008-04-29 | Intel Corporation | Thermally coupling an integrated heat spreader to a heat sink base |
US20080290502A1 (en) * | 2007-05-25 | 2008-11-27 | Zafer Kutlu | Integrated circuit package with soldered lid for improved thermal performance |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5037114A (de) * | 1973-08-06 | 1975-04-07 | ||
US3922775A (en) * | 1973-09-13 | 1975-12-02 | Sperry Rand Corp | High frequency diode and manufacture thereof |
JPS5627988A (en) * | 1979-08-15 | 1981-03-18 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser device |
JPS577989A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Mount for semiconductor laser |
DE3169519D1 (en) * | 1980-06-21 | 1985-05-02 | Lucas Ind Plc | Semi-conductor power device assembly and method of manufacture thereof |
US4465223A (en) * | 1980-12-31 | 1984-08-14 | International Business Machines Corporation | Process for brazing |
JPS6023906B2 (ja) * | 1981-05-18 | 1985-06-10 | 松下電器産業株式会社 | 部品の半田付方法 |
US4389557A (en) * | 1981-08-17 | 1983-06-21 | Northern Telecom Limited | Semiconductor laser bonding technique |
GB2137131B (en) * | 1983-03-15 | 1986-06-25 | Standard Telephones Cables Ltd | Bonding semiconductive bodies |
US4772935A (en) * | 1984-12-19 | 1988-09-20 | Fairchild Semiconductor Corporation | Die bonding process |
NL8501153A (nl) * | 1985-04-22 | 1986-11-17 | Philips Nv | Halfgeleiderinrichting. |
JPH0746747B2 (ja) * | 1986-09-09 | 1995-05-17 | 松下電器産業株式会社 | 半導体レーザのボンディング方法 |
US4875617A (en) * | 1987-01-20 | 1989-10-24 | Citowsky Elya L | Gold-tin eutectic lead bonding method and structure |
-
1988
- 1988-03-31 GB GB888807729A patent/GB8807729D0/en active Pending
-
1989
- 1989-03-31 CA CA000595449A patent/CA1311860C/en not_active Expired - Fee Related
- 1989-03-31 AT AT89303227T patent/ATE113413T1/de not_active IP Right Cessation
- 1989-03-31 JP JP1504169A patent/JP2557268B2/ja not_active Expired - Fee Related
- 1989-03-31 WO PCT/GB1989/000332 patent/WO1989009491A1/en unknown
- 1989-03-31 EP EP89303227A patent/EP0335744B1/de not_active Expired - Lifetime
- 1989-03-31 DE DE68918972T patent/DE68918972T2/de not_active Expired - Fee Related
- 1989-10-18 US US07/424,236 patent/US4995546A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE113413T1 (de) | 1994-11-15 |
EP0335744B1 (de) | 1994-10-26 |
JP2557268B2 (ja) | 1996-11-27 |
CA1311860C (en) | 1992-12-22 |
US4995546A (en) | 1991-02-26 |
EP0335744A1 (de) | 1989-10-04 |
WO1989009491A1 (en) | 1989-10-05 |
JPH02504572A (ja) | 1990-12-20 |
GB8807729D0 (en) | 1988-05-05 |
DE68918972T2 (de) | 1995-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA |
|
8339 | Ceased/non-payment of the annual fee |