DE68919870T2 - Integrierte Dünnschichtmembrane. - Google Patents

Integrierte Dünnschichtmembrane.

Info

Publication number
DE68919870T2
DE68919870T2 DE68919870T DE68919870T DE68919870T2 DE 68919870 T2 DE68919870 T2 DE 68919870T2 DE 68919870 T DE68919870 T DE 68919870T DE 68919870 T DE68919870 T DE 68919870T DE 68919870 T2 DE68919870 T2 DE 68919870T2
Authority
DE
Germany
Prior art keywords
film membrane
integrated thin
thin
integrated
membrane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68919870T
Other languages
English (en)
Other versions
DE68919870D1 (de
Inventor
James Holmen
Jeffrey Ridley
Steven James
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE68919870D1 publication Critical patent/DE68919870D1/de
Application granted granted Critical
Publication of DE68919870T2 publication Critical patent/DE68919870T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making
DE68919870T 1988-02-22 1989-02-18 Integrierte Dünnschichtmembrane. Expired - Fee Related DE68919870T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/158,824 US4784721A (en) 1988-02-22 1988-02-22 Integrated thin-film diaphragm; backside etch

Publications (2)

Publication Number Publication Date
DE68919870D1 DE68919870D1 (de) 1995-01-26
DE68919870T2 true DE68919870T2 (de) 1995-06-29

Family

ID=22569872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68919870T Expired - Fee Related DE68919870T2 (de) 1988-02-22 1989-02-18 Integrierte Dünnschichtmembrane.

Country Status (5)

Country Link
US (1) US4784721A (de)
EP (1) EP0330105B1 (de)
JP (1) JPH01309384A (de)
CA (1) CA1295055C (de)
DE (1) DE68919870T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041763A1 (de) * 2010-09-30 2012-04-05 Siemens Aktiengesellschaft Mikromechanisches Substrat

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041763A1 (de) * 2010-09-30 2012-04-05 Siemens Aktiengesellschaft Mikromechanisches Substrat
US9170226B2 (en) 2010-09-30 2015-10-27 Siemens Aktiengesellschaft Micromechanical substrate for a diaphragm with a diffusion barrier layer

Also Published As

Publication number Publication date
EP0330105B1 (de) 1994-12-14
CA1295055C (en) 1992-01-28
DE68919870D1 (de) 1995-01-26
JPH01309384A (ja) 1989-12-13
US4784721A (en) 1988-11-15
EP0330105A2 (de) 1989-08-30
EP0330105A3 (de) 1991-11-13

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