DE68921738T2 - Integrierte Lichtempfänger-Halbleiterschaltung. - Google Patents

Integrierte Lichtempfänger-Halbleiterschaltung.

Info

Publication number
DE68921738T2
DE68921738T2 DE68921738T DE68921738T DE68921738T2 DE 68921738 T2 DE68921738 T2 DE 68921738T2 DE 68921738 T DE68921738 T DE 68921738T DE 68921738 T DE68921738 T DE 68921738T DE 68921738 T2 DE68921738 T2 DE 68921738T2
Authority
DE
Germany
Prior art keywords
light receiver
semiconductor circuit
integrated light
receiver semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921738T
Other languages
English (en)
Other versions
DE68921738D1 (de
Inventor
Nobuo C O Yokohama Works Shiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE68921738D1 publication Critical patent/DE68921738D1/de
Application granted granted Critical
Publication of DE68921738T2 publication Critical patent/DE68921738T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
DE68921738T 1988-12-17 1989-12-15 Integrierte Lichtempfänger-Halbleiterschaltung. Expired - Fee Related DE68921738T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63319256A JPH02164111A (ja) 1988-12-17 1988-12-17 半導体装置

Publications (2)

Publication Number Publication Date
DE68921738D1 DE68921738D1 (de) 1995-04-20
DE68921738T2 true DE68921738T2 (de) 1996-01-04

Family

ID=18108164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921738T Expired - Fee Related DE68921738T2 (de) 1988-12-17 1989-12-15 Integrierte Lichtempfänger-Halbleiterschaltung.

Country Status (6)

Country Link
US (1) US5032885A (de)
EP (1) EP0387416B1 (de)
JP (1) JPH02164111A (de)
KR (1) KR920010922B1 (de)
CA (1) CA2005618A1 (de)
DE (1) DE68921738T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920009898B1 (ko) * 1989-12-30 1992-11-05 재단법인 한국전자통신연구소 수신용 광전집적회로 및 그 제조방법
JPH04163967A (ja) * 1990-10-27 1992-06-09 Canon Inc 光デバイス
JP2838318B2 (ja) * 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 感光装置及びその作製方法
US5166083A (en) * 1991-03-28 1992-11-24 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with heterojunction FETs and PIN diodes
EP0682373B1 (de) * 1994-05-12 1998-06-03 Hitachi Europe Limited Integrierte optoelektronische Schaltung
JP4703031B2 (ja) * 2001-05-18 2011-06-15 Ｏｋｉセミコンダクタ株式会社 化合物半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3135462A1 (de) * 1981-09-08 1983-09-01 AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang Monolithische eingangsstufe eines optischen empfaengers
JPS5927580A (ja) * 1982-08-04 1984-02-14 Agency Of Ind Science & Technol 光半導体装置
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
JPS6269672A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 光感半導体集積回路装置
JPS62190779A (ja) * 1986-02-18 1987-08-20 Nippon Telegr & Teleph Corp <Ntt> 集積形受光器
DE3629681A1 (de) * 1986-09-01 1988-03-10 Licentia Gmbh Photoempfaenger
US4701646A (en) * 1986-11-18 1987-10-20 Northern Telecom Limited Direct coupled FET logic using a photodiode for biasing or level-shifting
JPS63233563A (ja) * 1987-03-23 1988-09-29 Mitsubishi Electric Corp 光電子集積回路
JPH01109764A (ja) * 1987-10-22 1989-04-26 Nec Corp 光電子集積回路
US4924285A (en) * 1988-10-25 1990-05-08 The United States Of America As Represented By The Secretary Of The Navy Monolithic multichannel detector amplifier arrays and circuit channels

Also Published As

Publication number Publication date
KR900011013A (ko) 1990-07-11
KR920010922B1 (ko) 1992-12-24
DE68921738D1 (de) 1995-04-20
EP0387416B1 (de) 1995-03-15
US5032885A (en) 1991-07-16
EP0387416A3 (en) 1990-12-27
CA2005618A1 (en) 1990-06-17
JPH02164111A (ja) 1990-06-25
EP0387416A2 (de) 1990-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee