DE68922293D1 - Verfahren zur herstellung von halbleiteranordnungen. - Google Patents

Verfahren zur herstellung von halbleiteranordnungen.

Info

Publication number
DE68922293D1
DE68922293D1 DE68922293T DE68922293T DE68922293D1 DE 68922293 D1 DE68922293 D1 DE 68922293D1 DE 68922293 T DE68922293 T DE 68922293T DE 68922293 T DE68922293 T DE 68922293T DE 68922293 D1 DE68922293 D1 DE 68922293D1
Authority
DE
Germany
Prior art keywords
substrate
forming
semiconductor
conductor layer
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922293T
Other languages
English (en)
Other versions
DE68922293T2 (de
Inventor
Tadahiro Ohmi
Tadashi Shibata
Masaru Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE68922293D1 publication Critical patent/DE68922293D1/de
Publication of DE68922293T2 publication Critical patent/DE68922293T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
DE68922293T 1988-06-17 1989-06-15 Verfahren zur herstellung von halbleiteranordnungen. Expired - Fee Related DE68922293T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63150581A JP2501118B2 (ja) 1988-06-17 1988-06-17 半導体装置の製造方法
PCT/JP1989/000599 WO1989012909A1 (en) 1988-06-17 1989-05-15 Method of fabricating semiconductor devices

Publications (2)

Publication Number Publication Date
DE68922293D1 true DE68922293D1 (de) 1995-05-24
DE68922293T2 DE68922293T2 (de) 1995-12-21

Family

ID=15500012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922293T Expired - Fee Related DE68922293T2 (de) 1988-06-17 1989-06-15 Verfahren zur herstellung von halbleiteranordnungen.

Country Status (6)

Country Link
US (1) US5362672A (de)
EP (1) EP0380682B1 (de)
JP (1) JP2501118B2 (de)
AT (1) ATE121564T1 (de)
DE (1) DE68922293T2 (de)
WO (1) WO1989012909A1 (de)

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TW237562B (de) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
AU751353B2 (en) * 1998-07-03 2002-08-15 Canon Kabushiki Kaisha Crystal growth process, semiconductor device, and its production process
US6387736B1 (en) * 1999-04-26 2002-05-14 Agilent Technologies, Inc. Method and structure for bonding layers in a semiconductor device
US6884327B2 (en) * 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
DE602005017512D1 (de) 2004-12-08 2009-12-17 Symmorphix Inc Abscheidung von licoo2
US7244344B2 (en) * 2005-02-03 2007-07-17 Applied Materials, Inc. Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
WO2006083929A2 (en) * 2005-02-03 2006-08-10 Applied Materials, Inc. A physical vapor deposition plasma reactor with rf source power applied to the target
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
JP2008013829A (ja) * 2006-07-07 2008-01-24 Fujitsu Ltd 金属酸化膜の成膜方法
US8536611B2 (en) * 2008-06-17 2013-09-17 Hitachi, Ltd. Organic light-emitting element, method for manufacturing the organic light-emitting element, apparatus for manufacturing the organic light-emitting element, and organic light-emitting device using the organic light-emitting element

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DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
US3271286A (en) * 1964-02-25 1966-09-06 Bell Telephone Labor Inc Selective removal of material using cathodic sputtering
USRE30505E (en) * 1972-05-12 1981-02-03 Lfe Corporation Process and material for manufacturing semiconductor devices
US4043888A (en) * 1973-07-30 1977-08-23 Westinghouse Electric Corporation Superconductive thin films having transition temperature substantially above the bulk materials
US4057476A (en) * 1976-05-26 1977-11-08 General Dynamics Corporation Thin film photovoltaic diodes and method for making same
US4042447A (en) * 1976-11-01 1977-08-16 Sotec Corporation Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
JPS5462776A (en) * 1977-10-27 1979-05-21 Nec Corp Production of compound semiconductor thin films
CA1149773A (en) * 1979-12-31 1983-07-12 Theodore D. Moustakas Control of the hydrogen bonding in reactively sputtered amorphous silicon
US4279969A (en) * 1980-02-20 1981-07-21 The United States Of America As Represented By The Secretary Of The Navy Method of forming thin niobium carbonitride superconducting films of exceptional purity
US4336118A (en) * 1980-03-21 1982-06-22 Battelle Memorial Institute Methods for making deposited films with improved microstructures
CA1168762A (en) * 1981-06-22 1984-06-05 Osamu Michikami Method of fabrication for josephson tunnel junction
GB2111534A (en) * 1981-12-16 1983-07-06 Energy Conversion Devices Inc Making photoresponsive amorphous alloys and devices by reactive plasma sputtering
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
JPS58140111A (ja) * 1982-02-16 1983-08-19 Oki Electric Ind Co Ltd 半導体結晶の成長方法
JPS5918196A (ja) * 1982-07-21 1984-01-30 Hitachi Ltd 単結晶薄膜の製造方法
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
JPS59124711A (ja) * 1983-01-04 1984-07-18 Nec Corp 半導体装置の製造方法
US4761300A (en) * 1983-06-29 1988-08-02 Stauffer Chemical Company Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer
JPS6039819A (ja) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の作製方法
US4732659A (en) * 1984-06-11 1988-03-22 Stauffer Chemical Company Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor
JPS61148875A (ja) * 1984-12-22 1986-07-07 Toyo Electric Mfg Co Ltd 半導体装置の製造方法
US4659401A (en) * 1985-06-10 1987-04-21 Massachusetts Institute Of Technology Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD)
JPS62287071A (ja) * 1986-06-06 1987-12-12 Tadahiro Omi 薄膜の形成装置および形成方法
JPS6333561A (ja) * 1986-07-24 1988-02-13 Fuji Xerox Co Ltd 薄膜形成方法
JPH0750688B2 (ja) * 1986-09-24 1995-05-31 日本電信電話株式会社 薄膜形成法
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JPS63138710A (ja) * 1986-12-01 1988-06-10 Mitsubishi Electric Corp 極低温容器
JPS63170299A (ja) * 1987-01-07 1988-07-14 Nec Corp 化合物半導体の分子線結晶成長方法
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate

Also Published As

Publication number Publication date
JP2501118B2 (ja) 1996-05-29
DE68922293T2 (de) 1995-12-21
EP0380682A4 (en) 1990-12-27
JPH04340220A (ja) 1992-11-26
EP0380682A1 (de) 1990-08-08
US5362672A (en) 1994-11-08
ATE121564T1 (de) 1995-05-15
EP0380682B1 (de) 1995-04-19
WO1989012909A1 (en) 1989-12-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee