DE68925219T2 - Halbleiterlaser-Vorrichtung und Herstellungsverfahren für die Halbleiterlaser-Vorrichtung - Google Patents

Halbleiterlaser-Vorrichtung und Herstellungsverfahren für die Halbleiterlaser-Vorrichtung

Info

Publication number
DE68925219T2
DE68925219T2 DE68925219T DE68925219T DE68925219T2 DE 68925219 T2 DE68925219 T2 DE 68925219T2 DE 68925219 T DE68925219 T DE 68925219T DE 68925219 T DE68925219 T DE 68925219T DE 68925219 T2 DE68925219 T2 DE 68925219T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
manufacturing
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925219T
Other languages
English (en)
Other versions
DE68925219D1 (de
Inventor
Yasuo Mcoopmaruyamadai Ohba
Yukie Nishikawa
Hajime Hodogayagreentown Okuda
Masayuki Purumienishi Ishikawa
Hideto Sugawara
Hideo Toshibashinkoya Shiozawa
Yoshihiro Kokubun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63027668A external-priority patent/JP2685778B2/ja
Priority claimed from JP63037543A external-priority patent/JP2728672B2/ja
Priority claimed from JP63069641A external-priority patent/JP2685788B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68925219D1 publication Critical patent/DE68925219D1/de
Publication of DE68925219T2 publication Critical patent/DE68925219T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
DE68925219T 1988-02-10 1989-02-10 Halbleiterlaser-Vorrichtung und Herstellungsverfahren für die Halbleiterlaser-Vorrichtung Expired - Fee Related DE68925219T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63027668A JP2685778B2 (ja) 1988-02-10 1988-02-10 半導体レーザ装置
JP63037543A JP2728672B2 (ja) 1988-02-22 1988-02-22 半導体レーザ装置、ダブルヘテロウエハおよびその製造方法
JP63069641A JP2685788B2 (ja) 1988-03-25 1988-03-25 半導体発光素子

Publications (2)

Publication Number Publication Date
DE68925219D1 DE68925219D1 (de) 1996-02-08
DE68925219T2 true DE68925219T2 (de) 1996-05-30

Family

ID=27285905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925219T Expired - Fee Related DE68925219T2 (de) 1988-02-10 1989-02-10 Halbleiterlaser-Vorrichtung und Herstellungsverfahren für die Halbleiterlaser-Vorrichtung

Country Status (3)

Country Link
US (1) US5034957A (de)
EP (1) EP0328134B1 (de)
DE (1) DE68925219T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685209B2 (ja) * 1988-03-25 1997-12-03 株式会社東芝 半導体装置及び半導体発光装置
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
DE69033518T2 (de) * 1989-07-12 2000-12-21 Toshiba Kawasaki Kk Im transversalen Mode schwingender Halbleiterlaser
US5235194A (en) * 1989-09-28 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor light-emitting device with InGaAlP
US5103271A (en) * 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
JPH03129892A (ja) * 1989-10-16 1991-06-03 Toshiba Corp 半導体発光素子
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
US5144633A (en) * 1990-05-24 1992-09-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and manufacturing method thereof
JPH0449691A (ja) * 1990-06-18 1992-02-19 Mitsubishi Electric Corp 可視光レーザダイオード
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
US5596591A (en) * 1993-03-03 1997-01-21 Nec Corporation Gain-guided type laser diode
JPH08125126A (ja) * 1994-10-19 1996-05-17 Mitsubishi Electric Corp 半導体装置
JPH08250808A (ja) * 1995-03-15 1996-09-27 Toshiba Corp 半導体装置およびその製造方法
JP3373386B2 (ja) * 1997-03-19 2003-02-04 富士通株式会社 半導体装置及びその製造方法
JP3692269B2 (ja) * 1999-01-29 2005-09-07 シャープ株式会社 半導体レーザ素子及びその製造方法
JP3862894B2 (ja) 1999-08-18 2006-12-27 株式会社東芝 半導体レーザ装置
JP2002374038A (ja) * 2001-06-14 2002-12-26 Mitsubishi Electric Corp 半導体レーザ装置
US7215691B2 (en) * 2002-09-19 2007-05-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518202B2 (ja) * 1986-01-29 1996-07-24 ソニー株式会社 半導体レ―ザ装置の製造方法
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure

Also Published As

Publication number Publication date
EP0328134A3 (en) 1989-11-15
EP0328134B1 (de) 1995-12-27
EP0328134A2 (de) 1989-08-16
US5034957A (en) 1991-07-23
DE68925219D1 (de) 1996-02-08

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee