DE68926205D1 - Eintransistor-EPROM-Flash-Zelle - Google Patents

Eintransistor-EPROM-Flash-Zelle

Info

Publication number
DE68926205D1
DE68926205D1 DE68926205T DE68926205T DE68926205D1 DE 68926205 D1 DE68926205 D1 DE 68926205D1 DE 68926205 T DE68926205 T DE 68926205T DE 68926205 T DE68926205 T DE 68926205T DE 68926205 D1 DE68926205 D1 DE 68926205D1
Authority
DE
Germany
Prior art keywords
floating gate
flash cell
single transistor
thickness
tunnelling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926205T
Other languages
English (en)
Other versions
DE68926205T2 (de
Inventor
Chi Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE68926205D1 publication Critical patent/DE68926205D1/de
Publication of DE68926205T2 publication Critical patent/DE68926205T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
DE68926205T 1988-09-22 1989-09-15 Eintransistor-EPROM-Flash-Zelle Expired - Fee Related DE68926205T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/247,887 US4958321A (en) 1988-09-22 1988-09-22 One transistor flash EPROM cell

Publications (2)

Publication Number Publication Date
DE68926205D1 true DE68926205D1 (de) 1996-05-15
DE68926205T2 DE68926205T2 (de) 1996-11-28

Family

ID=22936796

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926205T Expired - Fee Related DE68926205T2 (de) 1988-09-22 1989-09-15 Eintransistor-EPROM-Flash-Zelle

Country Status (5)

Country Link
US (1) US4958321A (de)
EP (1) EP0360504B1 (de)
JP (1) JPH02135783A (de)
AT (1) ATE136688T1 (de)
DE (1) DE68926205T2 (de)

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US5032881A (en) * 1990-06-29 1991-07-16 National Semiconductor Corporation Asymmetric virtual ground EPROM cell and fabrication method
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
US5345418A (en) * 1991-01-24 1994-09-06 Nexcom Technology, Inc. Single transistor EEPROM architecture
US5197027A (en) * 1991-01-24 1993-03-23 Nexcom Technology, Inc. Single transistor eeprom architecture
JP2793722B2 (ja) * 1991-01-29 1998-09-03 富士通株式会社 不揮発性半導体記憶装置およびその製造方法
US5191556A (en) * 1991-03-13 1993-03-02 Advanced Micro Devices, Inc. Method of page-mode programming flash eeprom cell arrays
US5424567A (en) * 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
US5130769A (en) * 1991-05-16 1992-07-14 Motorola, Inc. Nonvolatile memory cell
US5264384A (en) * 1991-08-30 1993-11-23 Texas Instruments Incorporated Method of making a non-volatile memory cell
JP3431647B2 (ja) 1992-10-30 2003-07-28 株式会社半導体エネルギー研究所 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法
DE69325442T2 (de) * 1993-03-18 1999-12-16 St Microelectronics Srl Nichtflüchtige Flash-EEPROM-Speicheranordnung
US5349225A (en) * 1993-04-12 1994-09-20 Texas Instruments Incorporated Field effect transistor with a lightly doped drain
US5343424A (en) * 1993-04-16 1994-08-30 Hughes Aircraft Company Split-gate flash EEPROM cell and array with low voltage erasure
BE1007475A3 (nl) * 1993-09-06 1995-07-11 Philips Electronics Nv Halfgeleiderinrichting met een niet-vluchtig geheugen en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US5432749A (en) * 1994-04-26 1995-07-11 National Semiconductor Corporation Non-volatile memory cell having hole confinement layer for reducing band-to-band tunneling
US5416738A (en) * 1994-05-27 1995-05-16 Alliance Semiconductor Corporation Single transistor flash EPROM cell and method of operation
US5468981A (en) * 1994-09-01 1995-11-21 Advanced Micro Devices, Inc. Self-aligned buried channel/junction stacked gate flash memory cell
US5574685A (en) * 1994-09-01 1996-11-12 Advanced Micro Devices, Inc. Self-aligned buried channel/junction stacked gate flash memory cell
US5801076A (en) * 1995-02-21 1998-09-01 Advanced Micro Devices, Inc. Method of making non-volatile memory device having a floating gate with enhanced charge retention
US5581502A (en) * 1995-05-02 1996-12-03 Advanced Micro Devices, Inc. Method for reading a non-volatile memory array
US5648669A (en) * 1995-05-26 1997-07-15 Cypress Semiconductor High speed flash memory cell structure and method
US5546340A (en) * 1995-06-13 1996-08-13 Advanced Micro Devices, Inc. Non-volatile memory array with over-erase correction
US6787844B2 (en) * 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
US5811334A (en) * 1995-12-29 1998-09-22 Advanced Micro Devices, Inc. Wafer cleaning procedure useful in the manufacture of a non-volatile memory device
US6236597B1 (en) 1996-09-16 2001-05-22 Altera Corporation Nonvolatile memory cell with multiple gate oxide thicknesses
US5889700A (en) * 1997-05-05 1999-03-30 National Semiconductor Corporation High density EEPROM array using self-aligned control gate and floating gate for both access transistor and memory cell and method of operating same
US6451686B1 (en) 1997-09-04 2002-09-17 Applied Materials, Inc. Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
US6743688B1 (en) * 1998-01-05 2004-06-01 Advanced Micro Devices, Inc. High performance MOSFET with modulated channel gate thickness
US5972749A (en) * 1998-01-05 1999-10-26 Advanced Micro Devices, Inc. Method for preventing P1 punchthrough
US5998262A (en) * 1998-04-23 1999-12-07 Worldwide Semiconductor Manufacturing Corp. Method for manufacturing ETOX cell having damage-free source region
US6140676A (en) * 1998-05-20 2000-10-31 Cypress Semiconductor Corporation Semiconductor non-volatile memory device having an improved write speed
US6512401B2 (en) * 1999-09-10 2003-01-28 Intel Corporation Output buffer for high and low voltage bus
EP1120836A1 (de) * 2000-01-28 2001-08-01 STMicroelectronics S.r.l. Auf einem Halbleiter integrierte Speicherzellenstruktur
US6277691B1 (en) * 2000-04-04 2001-08-21 Chartered Semiconductor Manufacturing Ltd. Method to fabricate a robust and reliable memory device
US6750157B1 (en) 2000-10-12 2004-06-15 Advanced Micro Devices, Inc. Nonvolatile memory cell with a nitridated oxide layer
US20020123180A1 (en) * 2001-03-01 2002-09-05 Peter Rabkin Transistor and memory cell with ultra-short gate feature and method of fabricating the same
KR100471165B1 (ko) * 2002-05-07 2005-03-08 삼성전자주식회사 평탄하지 않은 게이트 절연막을 구비하는 비휘발성 메모리장치 및 그 제조 방법
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
US6760270B2 (en) * 2002-09-30 2004-07-06 Motorola, Inc. Erase of a non-volatile memory
US20040061190A1 (en) * 2002-09-30 2004-04-01 International Business Machines Corporation Method and structure for tungsten gate metal surface treatment while preventing oxidation
US6906529B2 (en) * 2003-06-10 2005-06-14 Stmicroelectronics, Inc. Capacitive sensor device with electrically configurable pixels
KR100552839B1 (ko) * 2003-11-05 2006-02-22 동부아남반도체 주식회사 반도체 소자 및 이의 제조 방법
KR100666615B1 (ko) * 2004-04-14 2007-01-09 매그나칩 반도체 유한회사 플래쉬 메모리 소자
KR100731058B1 (ko) * 2005-12-26 2007-06-22 동부일렉트로닉스 주식회사 이중 터널 산화막을 포함하는 플래시 메모리 셀 및 그 제조방법
JP2010511266A (ja) * 2006-11-29 2010-04-08 ラムバス・インコーポレーテッド オペレーション上の退化を反転する内蔵型加熱回路を有する集積回路
JP2011100876A (ja) * 2009-11-06 2011-05-19 Asahi Kasei Electronics Co Ltd Ｐチャネル型不揮発性メモリ及び半導体装置、ｐチャネル型不揮発性メモリの製造方法
CN102184896B (zh) * 2011-04-06 2012-08-29 北京大学 一种抑制闪存编程干扰的工艺方法
KR101334844B1 (ko) * 2011-12-29 2013-12-05 주식회사 동부하이텍 싱글 폴리형 이이피롬과 그 제조 방법
US8658495B2 (en) * 2012-03-08 2014-02-25 Ememory Technology Inc. Method of fabricating erasable programmable single-poly nonvolatile memory
US9899485B2 (en) * 2016-06-07 2018-02-20 International Business Machines Corporation Spatially decoupled floating gate semiconductor device
CN106992174B (zh) * 2017-01-18 2019-04-19 南方科技大学 晶体管存储器
FR3071355B1 (fr) * 2017-09-20 2019-08-30 Stmicroelectronics (Rousset) Sas Cellule-memoire eeprom compacte
WO2019132887A1 (en) * 2017-12-27 2019-07-04 Intel Corporation Reduced electric field by thickening dielectric on the drain side
CN111968983B (zh) * 2019-05-20 2023-10-17 联华电子股份有限公司 存储器元件的结构及其制造方法

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US4267588A (en) * 1978-12-07 1981-05-12 Alexander Daniels Hourglass construction
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
EP0183235B1 (de) * 1984-11-26 1993-10-06 Kabushiki Kaisha Toshiba Nichtflüchtige Halbleiterspeicheranordnung
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
JPS61276375A (ja) * 1985-05-29 1986-12-06 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド 集積回路ｅｅｐｒｏｍセルおよびその製作方法
JPS62150782A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd 半導体集積回路装置の製造方法
JPS63144577A (ja) * 1986-12-09 1988-06-16 Toshiba Corp 不揮発性半導体記憶装置
JPH01289282A (ja) * 1988-05-17 1989-11-21 Ricoh Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US4958321A (en) 1990-09-18
EP0360504B1 (de) 1996-04-10
JPH02135783A (ja) 1990-05-24
EP0360504A3 (en) 1990-10-31
DE68926205T2 (de) 1996-11-28
ATE136688T1 (de) 1996-04-15
EP0360504A2 (de) 1990-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee