DE68926648D1 - Verfahren und Detektor-Vorrichtung zum Abtasten durch Tunnelstrom - Google Patents

Verfahren und Detektor-Vorrichtung zum Abtasten durch Tunnelstrom

Info

Publication number
DE68926648D1
DE68926648D1 DE68926648T DE68926648T DE68926648D1 DE 68926648 D1 DE68926648 D1 DE 68926648D1 DE 68926648 T DE68926648 T DE 68926648T DE 68926648 T DE68926648 T DE 68926648T DE 68926648 D1 DE68926648 D1 DE 68926648D1
Authority
DE
Germany
Prior art keywords
scanning
detector device
tunnel current
probe electrodes
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926648T
Other languages
English (en)
Other versions
DE68926648T2 (de
Inventor
Yoshihiro Yanagisawa
Kunihiro Sakai
Hisaaki Kawade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68926648D1 publication Critical patent/DE68926648D1/de
Publication of DE68926648T2 publication Critical patent/DE68926648T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
    • G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/04—Display or data processing devices
    • G01Q30/06—Display or data processing devices for error compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/02—Probe holders
    • G01Q70/04—Probe holders with compensation for temperature or vibration induced errors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/06—Probe tip arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1445—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other switching at least one head in operating function; Controlling the relative spacing to keep the head operative, e.g. for allowing a tunnel current flow
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/837—Piezoelectric property of nanomaterial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/873—Tip holder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/874—Probe tip array
DE68926648T 1988-09-30 1989-09-28 Verfahren und Detektor-Vorrichtung zum Abtasten durch Tunnelstrom Expired - Fee Related DE68926648T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24459088 1988-09-30
JP1246427A JP2896794B2 (ja) 1988-09-30 1989-09-25 走査型トンネル電流検出装置，走査型トンネル顕微鏡，及び記録再生装置

Publications (2)

Publication Number Publication Date
DE68926648D1 true DE68926648D1 (de) 1996-07-18
DE68926648T2 DE68926648T2 (de) 1996-10-31

Family

ID=26536798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926648T Expired - Fee Related DE68926648T2 (de) 1988-09-30 1989-09-28 Verfahren und Detektor-Vorrichtung zum Abtasten durch Tunnelstrom

Country Status (6)

Country Link
US (1) US5107112A (de)
EP (1) EP0361932B1 (de)
JP (1) JP2896794B2 (de)
AT (1) ATE139333T1 (de)
CA (1) CA1318980C (de)
DE (1) DE68926648T2 (de)

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JPH04278236A (ja) * 1991-03-06 1992-10-02 Canon Inc 画像信号の記録及び／又は再生の方法、並びに装置
JP2930447B2 (ja) * 1991-05-15 1999-08-03 キヤノン株式会社 情報処理装置
JP2919119B2 (ja) * 1991-06-05 1999-07-12 キヤノン株式会社 走査プローブ顕微鏡及び記録再生装置
ATE186151T1 (de) * 1991-07-17 1999-11-15 Canon Kk Informationsaufzeichnungs-/wiedergabegrät zur informationsaufzeichnung und/oder -wiedergabe auf/von einem informationsaufzeichnungsträger durch benutzung einer sonde.
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JP3246987B2 (ja) * 1992-09-10 2002-01-15 キヤノン株式会社 マルチプローブ制御回路を具備する情報処理装置
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JP3025120B2 (ja) * 1992-12-21 2000-03-27 キヤノン株式会社 記録再生装置
JP3053986B2 (ja) * 1993-01-21 2000-06-19 キヤノン株式会社 記録再生装置
JP3207994B2 (ja) * 1993-02-17 2001-09-10 キヤノン株式会社 走査型プローブ顕微鏡、およびそれを用いた情報記録再生装置
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JPH0926427A (ja) * 1995-07-07 1997-01-28 Hewlett Packard Co <Hp> 位置決め装置、およびこれを用いたメディア移動型メモリ装置
DE19754681A1 (de) * 1997-12-10 1999-06-17 Peter Heiland In einem Rastermodus abtastende Vorrichtung mit einer Kompensation des Störeinflusses vonmechanischen Schwingungen auf dem Abtastvorgang
US6923044B1 (en) 2001-03-08 2005-08-02 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US7196328B1 (en) 2001-03-08 2007-03-27 General Nanotechnology Llc Nanomachining method and apparatus
US6752008B1 (en) 2001-03-08 2004-06-22 General Nanotechnology Llc Method and apparatus for scanning in scanning probe microscopy and presenting results
US6802646B1 (en) * 2001-04-30 2004-10-12 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US6787768B1 (en) 2001-03-08 2004-09-07 General Nanotechnology Llc Method and apparatus for tool and tip design for nanomachining and measurement
US6506087B1 (en) * 1998-05-01 2003-01-14 Canon Kabushiki Kaisha Method and manufacturing an image forming apparatus having improved spacers
EP1196939A4 (de) * 1999-07-01 2002-09-18 Gen Nanotechnology Llc Vorrichtung und verfahren zur untersuchung und/oder veränderungsobjekt
US6931710B2 (en) * 2001-01-30 2005-08-23 General Nanotechnology Llc Manufacturing of micro-objects such as miniature diamond tool tips
US7253407B1 (en) 2001-03-08 2007-08-07 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US7053369B1 (en) 2001-10-19 2006-05-30 Rave Llc Scan data collection for better overall data accuracy
US6813937B2 (en) 2001-11-28 2004-11-09 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US6998689B2 (en) * 2002-09-09 2006-02-14 General Nanotechnology Llc Fluid delivery for scanning probe microscopy
DE10344538A1 (de) 2003-09-25 2005-05-12 Integrated Dynamics Eng Gmbh Verfahren und Vorrichtung zur Schwingungsisolation, insbesondere für Elektronenstrahl-Meßwerkzeuge
JP4810241B2 (ja) * 2006-01-25 2011-11-09 キヤノン株式会社 プローブユニットおよび原子間力顕微鏡
US7486403B2 (en) * 2006-07-20 2009-02-03 Canon Kabushiki Kaisha Droplet shape measuring method and apparatus
CN101769711B (zh) * 2010-01-26 2012-09-05 重庆理工大学 一种基于隧道效应的接触式纳米位移传感器
CN106645803B (zh) * 2016-12-14 2019-03-22 国家纳米科学中心 一种双探针原子力显微镜快速逼近装置及方法
CN112924275B (zh) * 2021-01-25 2022-06-24 武汉大学 一种微力测量装置、其制备方法及原位力学测试的方法

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Also Published As

Publication number Publication date
EP0361932A3 (de) 1991-03-06
DE68926648T2 (de) 1996-10-31
EP0361932B1 (de) 1996-06-12
CA1318980C (en) 1993-06-08
US5107112A (en) 1992-04-21
EP0361932A2 (de) 1990-04-04
ATE139333T1 (de) 1996-06-15
JP2896794B2 (ja) 1999-05-31
JPH02216749A (ja) 1990-08-29

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee