DE68926980T2 - Verfahren zur Herstellung eines Dünnfilmtransistors - Google Patents
Verfahren zur Herstellung eines DünnfilmtransistorsInfo
- Publication number
- DE68926980T2 DE68926980T2 DE68926980T DE68926980T DE68926980T2 DE 68926980 T2 DE68926980 T2 DE 68926980T2 DE 68926980 T DE68926980 T DE 68926980T DE 68926980 T DE68926980 T DE 68926980T DE 68926980 T2 DE68926980 T2 DE 68926980T2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- source
- onto
- regions
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000013080 microcrystalline material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8801379A NL8801379A (nl) | 1988-05-30 | 1988-05-30 | Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68926980D1 DE68926980D1 (de) | 1996-09-26 |
DE68926980T2 true DE68926980T2 (de) | 1997-01-16 |
Family
ID=19852371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68926980T Expired - Fee Related DE68926980T2 (de) | 1988-05-30 | 1989-05-30 | Verfahren zur Herstellung eines Dünnfilmtransistors |
Country Status (8)
Country | Link |
---|---|
US (1) | US5102813A (de) |
EP (1) | EP0344863B1 (de) |
JP (1) | JPH02177368A (de) |
KR (1) | KR0183964B1 (de) |
AT (1) | ATE141715T1 (de) |
CA (1) | CA1318417C (de) |
DE (1) | DE68926980T2 (de) |
NL (1) | NL8801379A (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5366917A (en) * | 1990-03-20 | 1994-11-22 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
US5623243A (en) * | 1990-03-20 | 1997-04-22 | Nec Corporation | Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain |
US5318919A (en) * | 1990-07-31 | 1994-06-07 | Sanyo Electric Co., Ltd. | Manufacturing method of thin film transistor |
US5403760A (en) * | 1990-10-16 | 1995-04-04 | Texas Instruments Incorporated | Method of making a HgCdTe thin film transistor |
EP0486047B1 (de) * | 1990-11-16 | 1999-09-01 | Seiko Epson Corporation | Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung |
GB9114018D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
US5424230A (en) * | 1992-02-19 | 1995-06-13 | Casio Computer Co., Ltd. | Method of manufacturing a polysilicon thin film transistor |
US5409851A (en) * | 1992-05-04 | 1995-04-25 | Goldstar Co., Ltd. | Method of making a thin film transistor |
CN100578795C (zh) * | 1993-10-01 | 2010-01-06 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
DE4435461C2 (de) * | 1993-10-06 | 2001-09-20 | Micron Technology Inc N D Ges | Dünnfilmtransistor und dessen Herstellverfahren |
US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
US5814529A (en) | 1995-01-17 | 1998-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor |
JP3416723B2 (ja) * | 1995-05-25 | 2003-06-16 | 独立行政法人産業技術総合研究所 | 非晶質シリコン薄膜トランジスタ及びその製法 |
JP3440291B2 (ja) * | 1995-05-25 | 2003-08-25 | 独立行政法人産業技術総合研究所 | 微結晶シリコン薄膜トランジスタ |
US6043507A (en) * | 1997-09-24 | 2000-03-28 | Micron Technology, Inc. | Thin film transistors and methods of making |
GB9817745D0 (en) * | 1998-08-15 | 1998-10-14 | Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
US7402467B1 (en) * | 1999-03-26 | 2008-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
DE19935046C2 (de) * | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
DE10052131C2 (de) | 2000-10-20 | 2003-02-13 | Advanced Micro Devices Inc | Verfahren zur Herstellung von Feldeffekttransistoren mit einer vollständig selbstjustierenden Technologie |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
TWI270919B (en) * | 2002-04-15 | 2007-01-11 | Semiconductor Energy Lab | Display device and method of fabricating the same |
JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
JP5594773B2 (ja) * | 2010-09-30 | 2014-09-24 | 国立大学法人九州大学 | 選択成膜方法、成膜装置、及び構造体 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
US4523214A (en) * | 1981-07-03 | 1985-06-11 | Fuji Photo Film Co., Ltd. | Solid state image pickup device utilizing microcrystalline and amorphous silicon |
JPH0620122B2 (ja) * | 1982-01-19 | 1994-03-16 | キヤノン株式会社 | 半導体素子 |
JPS58219732A (ja) * | 1982-06-16 | 1983-12-21 | Tokyo Inst Of Technol | フツ素含有アモルフアス半導体の製造方法 |
US4737379A (en) * | 1982-09-24 | 1988-04-12 | Energy Conversion Devices, Inc. | Plasma deposited coatings, and low temperature plasma method of making same |
JPH0693509B2 (ja) * | 1983-08-26 | 1994-11-16 | シャープ株式会社 | 薄膜トランジスタ |
JPS60200523A (ja) * | 1984-03-26 | 1985-10-11 | Agency Of Ind Science & Technol | シリコン薄膜の製造法 |
US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
US4597160A (en) * | 1985-08-09 | 1986-07-01 | Rca Corporation | Method of fabricating a polysilicon transistor with a high carrier mobility |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
JPS62271418A (ja) * | 1986-05-20 | 1987-11-25 | Matsushita Electric Ind Co Ltd | 非晶質シリコン半導体素子の製造方法 |
US4762808A (en) * | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
GB2215126B (en) * | 1988-02-19 | 1990-11-14 | Gen Electric Co Plc | Process for manufacturing a thin film transistor |
-
1988
- 1988-05-30 NL NL8801379A patent/NL8801379A/nl not_active Application Discontinuation
-
1989
- 1989-05-29 CA CA000600932A patent/CA1318417C/en not_active Expired - Fee Related
- 1989-05-29 JP JP1137313A patent/JPH02177368A/ja active Pending
- 1989-05-30 US US07/358,952 patent/US5102813A/en not_active Expired - Fee Related
- 1989-05-30 KR KR1019890007274A patent/KR0183964B1/ko not_active IP Right Cessation
- 1989-05-30 EP EP89201379A patent/EP0344863B1/de not_active Expired - Lifetime
- 1989-05-30 AT AT89201379T patent/ATE141715T1/de not_active IP Right Cessation
- 1989-05-30 DE DE68926980T patent/DE68926980T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR0183964B1 (ko) | 1999-03-20 |
NL8801379A (nl) | 1989-12-18 |
KR900019245A (ko) | 1990-12-24 |
JPH02177368A (ja) | 1990-07-10 |
EP0344863B1 (de) | 1996-08-21 |
EP0344863A1 (de) | 1989-12-06 |
ATE141715T1 (de) | 1996-09-15 |
DE68926980D1 (de) | 1996-09-26 |
US5102813A (en) | 1992-04-07 |
CA1318417C (en) | 1993-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |