DE68927430T2 - Belichtungseinrichtung - Google Patents

Belichtungseinrichtung

Info

Publication number
DE68927430T2
DE68927430T2 DE68927430T DE68927430T DE68927430T2 DE 68927430 T2 DE68927430 T2 DE 68927430T2 DE 68927430 T DE68927430 T DE 68927430T DE 68927430 T DE68927430 T DE 68927430T DE 68927430 T2 DE68927430 T2 DE 68927430T2
Authority
DE
Germany
Prior art keywords
exposure device
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68927430T
Other languages
English (en)
Other versions
DE68927430D1 (de
Inventor
Hiroshi Kurosawa
Mitsuaki Amemiya
Shigeru Terashima
Koji Uda
Isamu Shimoda
Shunichi Uzawa
Kunitaka Ozawa
Makiko Mori
Ryuichi Ebinuma
Shinichi Hara
Nobutoshi Mizusawa
Eigo Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63218522A external-priority patent/JP2700392B2/ja
Priority claimed from JP63222251A external-priority patent/JP2750582B2/ja
Priority claimed from JP63222253A external-priority patent/JPH0271508A/ja
Priority claimed from JP63223483A external-priority patent/JP2640247B2/ja
Priority claimed from JP63227389A external-priority patent/JPH0276215A/ja
Priority claimed from JP63227388A external-priority patent/JP2741039B2/ja
Priority claimed from JP1133795A external-priority patent/JP2877352B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE68927430D1 publication Critical patent/DE68927430D1/de
Publication of DE68927430T2 publication Critical patent/DE68927430T2/de
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
DE68927430T 1988-09-02 1989-08-31 Belichtungseinrichtung Expired - Fee Related DE68927430T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP63218522A JP2700392B2 (ja) 1988-09-02 1988-09-02 露光装置
JP63222253A JPH0271508A (ja) 1988-09-07 1988-09-07 露光装置
JP63222251A JP2750582B2 (ja) 1988-09-07 1988-09-07 Ｘ線露光方法
JP63223483A JP2640247B2 (ja) 1988-09-08 1988-09-08 露光装置
JP63227388A JP2741039B2 (ja) 1988-09-13 1988-09-13 露光装置
JP63227389A JPH0276215A (ja) 1988-09-13 1988-09-13 露光装置
JP1133795A JP2877352B2 (ja) 1989-05-26 1989-05-26 Ｘ線露光装置

Publications (2)

Publication Number Publication Date
DE68927430D1 DE68927430D1 (de) 1996-12-12
DE68927430T2 true DE68927430T2 (de) 1997-03-13

Family

ID=27566014

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68929187T Expired - Fee Related DE68929187T2 (de) 1988-09-02 1989-08-31 Belichtungsapparat
DE68927430T Expired - Fee Related DE68927430T2 (de) 1988-09-02 1989-08-31 Belichtungseinrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE68929187T Expired - Fee Related DE68929187T2 (de) 1988-09-02 1989-08-31 Belichtungsapparat

Country Status (3)

Country Link
US (1) US5157700A (de)
EP (2) EP0694817B1 (de)
DE (2) DE68929187T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365561A (en) * 1988-03-25 1994-11-15 Canon Kabushiki Kaisha Exposure control in an X-ray exposure apparatus
DE68925323T2 (de) * 1988-09-14 1996-05-30 Canon Kk Belichtungssteuerung in einem Röntgenbelichtungsapparat
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Ｓｏｒ−ｘ線露光装置
EP0425739B1 (de) * 1989-10-30 1995-02-22 Canon Kabushiki Kaisha Ausrichtevorrichtung und eine damit versehene Synchrotron-Röntgenbelichtungsvorrichtung
DE69126719T2 (de) * 1990-03-09 1997-11-06 Canon Kk Belichtungsvorrichtung
JP3025545B2 (ja) * 1991-03-18 2000-03-27 キヤノン株式会社 Ｘ線リソグラフィ用マスクおよびｘ線リソグラフィ露光装置
EP0588579B1 (de) * 1992-09-14 1998-12-02 Canon Kabushiki Kaisha Synchrotron-Röntgenbelichtungsverfahren
JP3049680B2 (ja) * 1993-06-14 2000-06-05 キヤノン株式会社 ビーム位置検出装置及びこれを用いたシステム
JP3291408B2 (ja) * 1994-04-04 2002-06-10 キヤノン株式会社 露光装置および集積回路の製造方法
JPH07321024A (ja) * 1994-05-25 1995-12-08 Canon Inc 位置決め方法およびその装置ならびにこれらを用いた露光装置
US5835560A (en) * 1994-05-24 1998-11-10 Canon Kabushiki Kaisha Exposure apparatus
JP3391940B2 (ja) * 1995-06-26 2003-03-31 キヤノン株式会社 照明装置及び露光装置
JP3666951B2 (ja) 1995-10-06 2005-06-29 キヤノン株式会社 マーク検出方法、これを用いた位置合わせ方法、露光方法及び装置、ならびにデバイス生産方法
TW341719B (en) * 1996-03-01 1998-10-01 Canon Kk Surface position detecting method and scanning exposure method using the same
JP3862347B2 (ja) * 1996-04-11 2006-12-27 キヤノン株式会社 Ｘ線縮小露光装置およびこれを利用したデバイス製造方法
JP3284045B2 (ja) * 1996-04-30 2002-05-20 キヤノン株式会社 Ｘ線光学装置およびデバイス製造方法
US6559465B1 (en) 1996-08-02 2003-05-06 Canon Kabushiki Kaisha Surface position detecting method having a detection timing determination
JP3337921B2 (ja) 1996-08-23 2002-10-28 キヤノン株式会社 投影露光装置および位置合せ方法
KR0174997B1 (ko) * 1996-12-20 1999-03-20 김광호 노광설비의 이중노광 방지장치
JP3689516B2 (ja) * 1997-01-29 2005-08-31 キヤノン株式会社 電子ビーム露光装置
JP2000294523A (ja) * 1999-04-01 2000-10-20 Sony Corp 半導体製造装置および半導体装置の製造方法
US6484088B1 (en) * 1999-05-04 2002-11-19 Ssi Technologies, Inc. Fuel optimization system with improved fuel level sensor
US6573732B1 (en) * 1999-05-04 2003-06-03 Ssi Technologies, Inc. Dynamic range sensor and method of detecting near field echo signals
US6295332B1 (en) * 1999-06-12 2001-09-25 Robert Allen Selzer Method of improving x-ray lithography in the sub 100nm range to create high quality semiconductor devices
JP2000357644A (ja) 1999-06-14 2000-12-26 Canon Inc 露光方法及び露光装置
JP2000357643A (ja) 1999-06-14 2000-12-26 Canon Inc 露光方法及びそれを用いた露光装置
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
US6934003B2 (en) 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP2003297891A (ja) * 2002-01-31 2003-10-17 Rigaku Industrial Co 半導体用蛍光ｘ線分析装置
US20070147579A1 (en) * 2005-12-23 2007-06-28 De Man Bruno K B Method and system for radiographic imaging with organ-based radiation profile prescription
JP4789260B2 (ja) * 2006-08-23 2011-10-12 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置及びアパーチャの軸調整方法
EP2461347A1 (de) 2010-12-06 2012-06-06 Fei Company Detektorsystem für Transmissionselektronenmikroskop
DE102016220096B3 (de) * 2016-10-14 2018-02-08 Siemens Healthcare Gmbh Verfahren zur Generierung von Röntgenbilddaten
US20180333657A1 (en) * 2017-05-17 2018-11-22 Sable Sand Solutions Inc. Detection of contents of a sand separator using radiation

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722958A1 (de) * 1977-05-20 1978-11-23 Siemens Ag Verfahren zur justierung einer halbleiterscheibe relativ zu einer bestrahlungsmaske bei der roentgenstrahl-fotolithografie
JPS5645026A (en) 1979-09-20 1981-04-24 Matsushita Electric Ind Co Ltd Forming method for resin film on semiconductor substrate
JPS6037616B2 (ja) 1980-01-24 1985-08-27 理学電機株式会社 Ｘ線リゾグラフイ装置
JPS57101839A (en) 1980-12-18 1982-06-24 Nippon Kogaku Kk <Nikon> Exposure device for wafer or photomask
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
DE3270459D1 (en) * 1981-12-31 1986-05-15 Ibm A method and apparatus for providing a uniform illumination of an area
JPS5952246A (ja) * 1982-09-20 1984-03-26 Nippon Kogaku Kk <Nikon> 露光制御装置
JPS59198726A (ja) 1983-04-26 1984-11-10 Fujitsu Ltd Ｍｉｃ装置の製造方法
JPS6084814A (ja) 1983-06-22 1985-05-14 Agency Of Ind Science & Technol Ｘ線投射装置
JPS60198726A (ja) 1984-03-23 1985-10-08 Hitachi Ltd Ｘ線露光装置の露光量調整方法と装置
JPS6159828A (ja) 1984-08-31 1986-03-27 Nippon Telegr & Teleph Corp <Ntt> Ｘ線リソグラフイ装置
JPS61113065A (ja) 1984-11-07 1986-05-30 Hitachi Ltd 露光装置
JPS61141135A (ja) 1984-12-14 1986-06-28 Hitachi Ltd Ｘ線リソグラフイ装置
JPS61276223A (ja) 1985-05-30 1986-12-06 Fujitsu Ltd Ｘ線露光方法
JPS6414918A (en) * 1987-07-08 1989-01-19 Nikon Corp Stepper
AT393334B (de) * 1988-01-22 1991-09-25 Ims Ionen Mikrofab Syst Anordnung zur stabilisierung einer bestrahlten maske
US4804978A (en) * 1988-02-19 1989-02-14 The Perkin-Elmer Corporation Exposure control system for full field photolithography using pulsed sources

Also Published As

Publication number Publication date
EP0694817A2 (de) 1996-01-31
EP0694817A3 (de) 1996-04-10
EP0694817B1 (de) 2000-03-22
DE68929187D1 (de) 2000-04-27
DE68927430D1 (de) 1996-12-12
EP0357425B1 (de) 1996-11-06
US5157700A (en) 1992-10-20
DE68929187T2 (de) 2000-09-28
EP0357425A2 (de) 1990-03-07
EP0357425A3 (de) 1991-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee