DE68929225T2 - Nichtflüchtiger Halbleiterspeicher - Google Patents

Nichtflüchtiger Halbleiterspeicher

Info

Publication number
DE68929225T2
DE68929225T2 DE68929225T DE68929225T DE68929225T2 DE 68929225 T2 DE68929225 T2 DE 68929225T2 DE 68929225 T DE68929225 T DE 68929225T DE 68929225 T DE68929225 T DE 68929225T DE 68929225 T2 DE68929225 T2 DE 68929225T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68929225T
Other languages
English (en)
Other versions
DE68929225D1 (de
Inventor
Masamichi Asano
Hiroshi Iwahashi
Ryouhei Kirisawa
Ryozo Nakayama
Satoshi Inoue
Riichiro Shirota
Tetsuo Endoh
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63265370A external-priority patent/JPH07105451B2/ja
Priority claimed from JP1224006A external-priority patent/JPH0770627B2/ja
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE68929225D1 publication Critical patent/DE68929225D1/de
Application granted granted Critical
Publication of DE68929225T2 publication Critical patent/DE68929225T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE68929225T 1988-10-21 1989-09-14 Nichtflüchtiger Halbleiterspeicher Expired - Fee Related DE68929225T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63265370A JPH07105451B2 (ja) 1988-10-21 1988-10-21 不揮発性半導体メモリ
JP1224006A JPH0770627B2 (ja) 1989-08-30 1989-08-30 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
DE68929225D1 DE68929225D1 (de) 2000-08-03
DE68929225T2 true DE68929225T2 (de) 2000-11-30

Family

ID=26525796

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68924849T Expired - Fee Related DE68924849T2 (de) 1988-10-21 1989-09-14 Nichtflüchtiger halbleiterspeicher und verfahren zur herstellung.
DE68929225T Expired - Fee Related DE68929225T2 (de) 1988-10-21 1989-09-14 Nichtflüchtiger Halbleiterspeicher

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE68924849T Expired - Fee Related DE68924849T2 (de) 1988-10-21 1989-09-14 Nichtflüchtiger halbleiterspeicher und verfahren zur herstellung.

Country Status (5)

Country Link
US (3) US5323039A (de)
EP (2) EP0639860B1 (de)
KR (1) KR940008228B1 (de)
DE (2) DE68924849T2 (de)
WO (1) WO1990004855A1 (de)

Families Citing this family (42)

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WO1993011509A1 (en) * 1991-12-04 1993-06-10 Citizen Watch Co., Ltd. Data carrier
JP2959066B2 (ja) * 1990-07-11 1999-10-06 日本電気株式会社 不揮発性半導体記憶装置およびその駆動方法
US5291440A (en) * 1990-07-30 1994-03-01 Nec Corporation Non-volatile programmable read only memory device having a plurality of memory cells each implemented by a memory transistor and a switching transistor stacked thereon
DE4026409A1 (de) * 1990-08-21 1992-02-27 Philips Patentverwaltung Elektrisch programmier- und loeschbarer halbleiterspeicher und verfahren zu seinem betrieb
DE4026408A1 (de) * 1990-08-21 1992-02-27 Philips Patentverwaltung Elektrisch programmier- und loeschbarer halbleiterspeicher und verfahren zu seinem betrieb
US5321286A (en) * 1991-11-26 1994-06-14 Nec Corporation Non-volatile semiconductor memory device having thin film memory transistors stacked over associated selecting transistors
FR2693308B1 (fr) * 1992-07-03 1994-08-05 Commissariat Energie Atomique Memoire eeprom a triples grilles et son procede de fabrication.
US5350706A (en) * 1992-09-30 1994-09-27 Texas Instruments Incorporated CMOS memory cell array
KR950013342B1 (ko) * 1992-10-06 1995-11-02 삼성전자주식회사 반도체 메모리장치의 결함구제회로
KR960006748B1 (ko) * 1993-03-31 1996-05-23 삼성전자주식회사 고속동작 및 저전원공급전압에 적합한 쎌구조를 가지는 불휘발성 반도체 집적회로
JP2825407B2 (ja) * 1993-04-01 1998-11-18 株式会社東芝 不揮発性半導体記憶装置
JP3450467B2 (ja) * 1993-12-27 2003-09-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
EP0673071B1 (de) * 1994-03-11 2002-08-14 STMicroelectronics, Inc. Flash EEPROM und EPROM-Anordnungen
JP3469362B2 (ja) * 1994-08-31 2003-11-25 株式会社東芝 半導体記憶装置
EP0752721B1 (de) * 1995-06-29 2009-04-29 Sharp Kabushiki Kaisha Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung
US5877054A (en) * 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
US5844271A (en) * 1995-08-21 1998-12-01 Cypress Semiconductor Corp. Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate
KR0179791B1 (ko) * 1995-12-27 1999-03-20 문정환 플래쉬 메모리 소자 및 그 제조방법
EP0802569B1 (de) * 1996-04-15 2003-09-24 STMicroelectronics S.r.l. Mit einem EEPROM integrierter FLASH-EPROM
US5741737A (en) * 1996-06-27 1998-04-21 Cypress Semiconductor Corporation MOS transistor with ramped gate oxide thickness and method for making same
US5897354A (en) * 1996-12-17 1999-04-27 Cypress Semiconductor Corporation Method of forming a non-volatile memory device with ramped tunnel dielectric layer
US6781883B1 (en) * 1997-03-20 2004-08-24 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
JP3586072B2 (ja) 1997-07-10 2004-11-10 株式会社東芝 不揮発性半導体記憶装置
US6023085A (en) * 1997-12-18 2000-02-08 Advanced Micro Devices, Inc. Core cell structure and corresponding process for NAND-type high performance flash memory device
FR2783972B1 (fr) * 1998-09-29 2003-05-30 Commissariat Energie Atomique Cellule memoire non volatile, auto-alignee, sans contact et a surface reduite
EP0993036A1 (de) * 1998-10-09 2000-04-12 STMicroelectronics S.r.l. Verfahren zur Herstellung einer integrierten Halbleiteranordnung mit einem Feldeffekttransistor mit schwebendem Gate und einem logischen Feldeffekttransistor, und entsprechende Anordnung
US6235586B1 (en) * 1999-07-13 2001-05-22 Advanced Micro Devices, Inc. Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications
KR100346598B1 (ko) 1999-10-07 2002-07-26 동부전자 주식회사 반도체 디바이스의 메모리 셀 제조 방법
JP2002289705A (ja) * 2001-03-23 2002-10-04 Fujitsu Ltd 半導体メモリ
KR100395755B1 (ko) * 2001-06-28 2003-08-21 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US6670240B2 (en) * 2001-08-13 2003-12-30 Halo Lsi, Inc. Twin NAND device structure, array operations and fabrication method
US6989551B2 (en) * 2001-11-02 2006-01-24 Lattice Semiconductor Corporation Test structure for determining a minimum tunnel opening size in a non-volatile memory
US7326994B2 (en) * 2005-10-12 2008-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Logic compatible non-volatile memory cell
KR100829604B1 (ko) * 2006-09-26 2008-05-14 삼성전자주식회사 불휘발성 메모리 장치 및 그 제조 방법
US7663916B2 (en) 2007-04-16 2010-02-16 Taiwan Semicondcutor Manufacturing Company, Ltd. Logic compatible arrays and operations
DE102007028179A1 (de) 2007-06-20 2008-12-24 Christian Großekathöfer Frei gestaltbarer Datenträger (für Film, Musik & Multimediadaten)
US7968926B2 (en) 2007-12-19 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Logic non-volatile memory cell with improved data retention ability
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
KR102002942B1 (ko) * 2013-04-18 2019-07-24 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조방법
TWI555213B (zh) * 2014-09-04 2016-10-21 力晶科技股份有限公司 快閃記憶體閘極結構及其製作方法
US11322516B2 (en) 2020-08-31 2022-05-03 Micron Technology, Inc. Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systems

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JPS57162370A (en) * 1981-03-30 1982-10-06 Seiko Epson Corp Mos semiconductor memory device
JPS58190069A (ja) * 1982-04-29 1983-11-05 Mitsubishi Electric Corp 半導体不揮発性メモリ装置
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
US4635347A (en) * 1985-03-29 1987-01-13 Advanced Micro Devices, Inc. Method of fabricating titanium silicide gate electrodes and interconnections
JPS6254962A (ja) * 1985-09-04 1987-03-10 Nec Corp トランジスタ
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
KR940006094B1 (ko) * 1989-08-17 1994-07-06 삼성전자 주식회사 불휘발성 반도체 기억장치 및 그 제조방법
JPH04212472A (ja) * 1990-07-13 1992-08-04 Toshiba Corp 不揮発性半導体記憶装置の製造方法
JPH06254962A (ja) * 1993-03-05 1994-09-13 Canon Aptecs Kk ラミネート装置

Also Published As

Publication number Publication date
WO1990004855A1 (fr) 1990-05-03
EP0419663B1 (de) 1995-11-15
KR940008228B1 (ko) 1994-09-08
DE68929225D1 (de) 2000-08-03
DE68924849T2 (de) 1996-06-13
EP0419663A1 (de) 1991-04-03
EP0639860B1 (de) 2000-06-28
US5597748A (en) 1997-01-28
KR900702578A (ko) 1990-12-07
EP0419663A4 (en) 1991-06-12
DE68924849D1 (de) 1995-12-21
US5323039A (en) 1994-06-21
US5824583A (en) 1998-10-20
EP0639860A1 (de) 1995-02-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee